Littelfuse IX4351NE SiC MOSFET & IGBT Driver Wins Annual Power Product Award
LITTELFUSE component recognized for its superior green energy savings performance.
CHICAGO, December 3, 2020 - Littelfuse, Inc. (NASDAQ: LFUS), a global manufacturer of leading technologies in circuit protection, power control and sensing,today announced its IX4351NE SiC MOSFET and IGBT Driver has been named a Green Energy Award Winner for 21ic.com’s 2020 Annual Power Product Awards. Held for the last 17 years, these awards recognize and honor the best products throughout the world that succeed in energy conservation and environmental protection.
The power supply technologies of tomorrow are more than energy porters. Highly-efficient power supply technologies are drivers of innovation, allowing for better products and more advanced systems. The IX4351NE offers one of the highest energy efficiency ratios in its class, making it one of the most energy-conscious and environmentally-friendly drivers available today.
The Annual Power Product Awards presented by 21ic.com serves as one of the best display platforms for today’s power supply technologies due to the number of participating manufacturers and the wide range of product categories. For the 2020 selection, the Littelfuse IX4351NE SiC MOSFET and IGBT Driver was chosen as one of the only two winners of the Green Energy Award due to its superior green energy savings capabilities and improved cost performance.
Designed specifically to drive SiC MOSFETs and high power IGBT, the IX4351NE offers a separate 9 A source and sink outputs, allowing for tailored turn on and turn off timing while minimizing switching losses. The device’s internal negative charge regulator provides a selectable negative gate drive bias, delivering improved dV/dt immunity and a faster turn off. This driver eliminates the need for a separate negative supply, with an operating voltage range of -10 V to +25 V.
"On behalf of everyone at Littelfuse, we are honored to receive the Green Energy Award for the IX4351NE," said David Zha, China electronics sales director at Littelfuse. "This award means a lot to our team, as it recognizes our innovation in the power supply category, and our ongoing commitment to greener and more energy-efficient products."
About the Annual Power Product Awards
The Annual Power Product Awards have continued for the past 17 years, showcasing the best power supply technology in the industry. This year, awards included the TOP10 POWER Award, along with four different types of individual awards to recognize certain special products.
- |
- +1 赞 0
- 收藏
- 评论 1
本文由翊翊所思转载自Littelfuse,原文标题为:Littelfuse IX4351NE SiC MOSFET & IGBT Driver Wins Annual Power Product Award,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
相关推荐
SMPD先进绝缘封装可充分发挥SiC MOSFET优势,提高功率密度,简化热管理
SMPD代表表面安装功率器件(Surface Mount Power Device),是先进的顶部散热绝缘封装,由IXYS(现在是Littelfuse公司的一部分)在2012年开发。SMPD只有硬币大小。通过在应用中使用SMPD,设计人员可以实现更短的功率环路,同时减少必需器件的数目。较短的功率环路使得杂散电感最小化,这有助于减少栅极振荡和漏极电压过冲。
Littelfuse SiC MOSFET和IGBT驱动器IX4351NE荣获“2020年度电源产品绿色节能奖”
2020年12月3日,Littelfuse公司宣布其SiC MOSFET和IGBT驱动器IX4351NE已被授予“2020年度电源产品绿色节能奖”。该奖项已举办17年,旨在表彰在节能和环保方面取得成功的全球最佳产品。
Littelfuse全新短交期、低成本SiC MOSFET,专为高品质高频应用
Littelfuse推出全新高性能LSIC1MO120E0160、LSIC1MO120E0080碳化硅SiC MOSFET,具有比同品质产品更低的价格,可对应替代CREE的C2MO160120D、C2MO080120D及ROHM的SCT2160KE、SCT2080KE。在市场上SiC器件普遍缺货的环境下,可做到更短的交期,降低缺货风险。
【IC】Littelfuse用于SiC MOSFET和高功率IGBT的创新低侧栅极驱动器IX4352NE
Littelfuse宣布推出IX4352NE低侧SiC MOSFET和IGBT栅极驱动器。这款创新的驱动器专门设计用于驱动工业应用中的碳化硅(SiC)MOSFET和高功率绝缘栅双极晶体管(IGBT)。IX4352NE通过一种新型9A拉/灌电流驱动器扩展了我们广泛的低侧栅极驱动器系列,简化了SiC MOSFET所需的栅极驱动电路。
【经验】基于栅极驱动器BM6104FV-C与IXDD609的SiC MOSFET驱动电路设计
SiC MOSFET对驱动要求高,主要体现在驱动电压和驱动速度。SiC MOSFET标称驱动电压范围一般为-6~22V,其开启电压一般很低,并随温度上升而降低,但只有达到18-20V时,才能完全开通。硅器件的驱动电压最高一般为15V,所以驱动不能直接用于驱动SiC MOSFET。笔者针对应用要求,在实际设计中选用ROHM BM6104FV-C栅极驱动器并在后级添加力特的IXDD609进行功率放大。
利用SMFA系列非对称TVS二极管实现高效SiC MOSFET栅极保护应用说明
描述- 本文介绍了Littelfuse公司推出的SMFA系列非对称TVS二极管,用于保护SiC MOSFET栅极免受正向和负向过电压浪涌的影响。该系列二极管具有不同的击穿电压和钳位电压,适用于不同栅极额定电压的SiC MOSFET。SMFA二极管采用SOD-123FL扁平封装,可减少寄生效应和PCB面积,提高电路的稳健性和可靠性。
型号- SMFA1905CA,SMFA,SMFA1505CA,SMFA1805CA,SMFA系列,SMFA2005CA
【选型】力特1700V SiC MOSFET助力光伏逆变器1500V系统辅助电源高效稳定运行
现在光伏逆变器电压等级提升到1500V,如果选用单端反激拓扑,单管MOS耐压值需要超过3000V,因此建议采用双管反激方案,推荐Littelfuse的SiC MOSFET LSIC1MO170E1000,1700V高耐压,同时采用常用的TO247封装,可直接替换Si MOS使用。
蓉矽半导体碳化硅产品在车载充电机中的应用:已通过AEC-Q101测试和HV-H3TRB考核
为了提升充电效率,延长续航里程,800V高压平台成为主流选择。使用1200V碳化硅MOSFET对提升OBC功率密度、降低重量具有积极意义和显著效果。NOVUSEM自主研发的1200V 40mΩ SiC MOSFET NC1M120C40HT已顺利通过AEC-Q101车规级测试和HV-H3TRB加严可靠性考核,支持11kW/22kW大功率主流充电,适配目前OBC 800V高电压电池发展趋势。
用于SiC MOSFET栅极保护的SMFA系列非对称TVS二极管产品简介
描述- SMFA系列不对称TVS二极管专为SiC MOSFET栅极保护设计,提供单组件解决方案,有效降低寄生效应和PCB面积,适用于快速切换的SiC应用。
型号- SMFA,SMFA SERIES
60W辅助电源应用说明
描述- 本资料介绍了基于1700V SiC MOSFET的60W辅助电源设计,采用单开关反激拓扑,适用于工业应用。设计特点包括单开关反激拓扑、闭环控制输出电压调节、高功率转换效率、宽输入电压范围(300V~1000V)。主要应用于电机驱动、光伏逆变器、UPS系统和模块化多电平转换器。资料详细讨论了电路设计、变压器设计、RCD钳位电路、电流感应参数和闭环控制参数等。
型号- 1N4148W-TP,P6SMB20ALFCT-ND,TL431AIDBZ,PHE450RD6220JR06L2,72913-2,BZT52C10-7-F,MMBT3904-TP,LSIC1MO170E1000,MMSZ5248B-TP,EEE-1VA220SP,MMBT2222A,DSA30C150PB,STP03D200,RS1M-13-F,B32672L1622,EGXF350ELL152MK25S,EEE-FK1E680P,PBSS4240T,FOD817A3SD,STTH1R02,2220Y2K00104KXTWS2,MMBT2907A-7-F,MKP1848C61060JK2,MMSZ5250B-7-F,UCC28C44DR
【应用】1200V/160mΩ的SiC MOSFET助力双向OBC小型化设计,可实现300KHz开关频率
本文推荐Littelfuse的SiC MOSFET LSIC1MO120E0160,耐压1200V,导通电阻160mΩ,助力双向OBC设计。可实现300KHz的开关频率,设计时可减小变压器体积,实现OBC小型化需求,此外产品本身具有高可靠性。
HK341-X 3A IGBT栅极驱动器
描述- 该资料详细介绍了HK341-X型IGBT门极驱动器,这是一种集成了红外LED、光电检测器和功率输出级的光电耦合器。该产品适用于驱动电机控制逆变器应用中的功率IGBT和MOSFET。它具有高工作电压范围,能够为栅极控制设备提供所需的驱动电压,适用于直接驱动高达1200V/50A的IGBT。
型号- HK341-X
【元件】LITTELFUSE推出业界首款用于SiC MOSFET栅极保护的非对称瞬态抑制二极管系列
LITTELFUSE是一家工业技术制造公司,致力于为可持续发展、互联互通和更安全的世界提供动力。公司近日宣布推出SMFA非对称系列表面贴装瞬态抑制二极管,这是市场上首款非对称瞬态抑制解决方案,专为保护碳化硅(SiC)MOSFET栅极免受过压事件影响而设计。
PAI8265AEQ单通道隔离式SiC/IGBT栅极驱动器
描述- Pai8265AEQ是一款适用于汽车应用的隔离SiC/IGBT栅极驱动器。它具有10A峰值源和吸收电流,4A内部主动Miller钳位,400mA软关断电流等特点。该产品适用于电机控制逆变器应用,可直接驱动高达1200V和150A的IGBT。
型号- PAI8265AEQ
Littelfuse Unveils Industry’s First Asymmetrical TVS Diode Series for SiC MOSFET Gate Protection
Littelfuse today announced the SMFA Asymmetrical Series Surface-Mount TVS Diode, the first-to-market asymmetrical TVS solution specifically designed to protect SiC MOSFET gates from overvoltage events.
电子商城
现货市场
服务
定制液冷板尺寸5mm*5mm~3m*1.8m,厚度2mm-100mm,单相液冷板散热能力最高300W/cm²。
最小起订量: 1片 提交需求>
可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。
实验室地址: 西安 提交需求>
登录 | 立即注册
提交评论