GaN Switching Frequency: Using Gallium Nitride Technology in Next-Generation High-Frequency Circuits
Gallium nitride (GaN) is a very hard, mechanically stable wide bandgap semiconductor that is used in the production of power devices as well as RF components and light-emitting diodes (LEDs). GaN switching frequency is substantially higher than silicon, enabling power electronics designers to create smaller, more efficient, and higher-performing systems that were previously challenging to achieve with silicon technologies.
How GaN Switching Frequency Compares to Silicon Switching Frequency
GaN devices can operate at higher frequencies than silicon due to their superior material properties such as high carrier mobility, low on-resistance, and low parasitic capacitance. These properties allow GaN devices to switch up to 100 x faster and more efficiently than silicon devices.
Silicon devices are typically limited to switching frequencies of up to a few hundred kilohertz, while GaN devices can operate at switching frequencies of several megahertz or even tens of megahertz.
The high switching frequency of GaN devices is particularly advantageous in applications such as power electronics and audio amplifiers. In power electronics, high switching frequencies can reduce the size and weight of the components used in the circuit, while also improving efficiency. In audio amplifiers, high switching frequencies can reduce distortion and noise, resulting in higher audio quality.
The Benefits of GaN for High-Frequency Circuit Applications
GaN's increased switching frequency is especially useful for high-frequency applications that require high efficiency and high performance. GaN's fast switching speed can reduce switching losses, resulting in increased efficiency and reduced heat generation. The higher frequency can also enable smaller and lighter passive components, such as capacitors and inductors, which can lead to more compact and higher power-density designs.
Some of the applications where GaN's increased switching frequency provides significant advantages over silicon devices include:
Power electronics:
In power electronics applications, such as DC-DC converters, AC-DC converters, and wireless power, the high switching frequencies of GaN can help reduce the size and weight of the components used in the circuit while also improving efficiency.
Motor drives:
In motor drive applications, such as those used for robotics, drones, automotive, and industrial machinery, high switching frequencies enable higher power density, increased efficiency, higher performance, and reduced EMI. These benefits can make GaN-based motor drive systems more compact, reliable, and cost-effective than silicon-based systems.
Time-of-flight/Lidar:
In lidar applications such as those used for autonomous vehicles, drones, and robotics, the high switching frequencies of GaN improve resolution, increase range, enable faster scanning, and reduce the size and weight of the system.
Audio amplifiers:
In audio applications, GaN's high switching frequency can help reduce distortion and noise, resulting in higher audio quality. This makes GaN particularly well-suited for Class-D audio amplifiers, which are known for their efficiency and ability to produce high-quality audio.
LED lighting:
GaN's high switching frequency can also be used in LED lighting applications, where it can help reduce the size and weight of the power supply while improving efficiency.
Using GaN Switching Frequency to Overcome Design Challenges
The high switching frequency of GaN can be used to overcome several design challenges. Here are a few examples:
1. Smaller Size: One of the primary challenges in power electronics design is size constraints. Using GaN's high switching frequency, designers can reduce the size of passive components such as inductors and capacitors. This can result in smaller and more compact designs, which are especially useful in applications with space and weight constraints like electric vehicles, satellites, consumer electronics, and motor drives for eMobility, robotics, and drones.
2. Higher Efficiency: High switching frequencies allow for reduced switching losses in power electronics systems, which results in higher efficiency. This can lead to longer battery life in portable devices and lower energy consumption in fixed systems. In applications like data centers, where energy costs can be significant, the use of GaN-based power electronics can lead to substantial energy savings.
3. Better Thermal Management: GaN's high switching frequency allows for faster switching, which reduces the time that the device spends in the high-current state. This results in less heat generation, which can make it easier to manage thermal performance. Additionally, GaN's high efficiency can reduce the amount of heat that needs to be dissipated in the first place, further simplifying thermal management.
4. Reduced EMI: High-frequency switching can produce significant electromagnetic interference (EMI), which can be challenging to manage in power electronics systems. However, GaN's fast switching capability allows for lower EMI levels due to reduced voltage and current overshoot. This can make it easier to meet regulatory requirements for EMI.
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本文由Vicky转载自EPC GaN Talk,原文标题为:GaN Switching Frequency: Using Gallium Nitride Technology in Next-Generation High-Frequency Circuits,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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USB功率传输的进步:氮化镓技术的效率和高功率密度
描述- 本文探讨了USB技术,特别是USB Power Delivery (USB PD) 3.1规范的演变,以及GaN技术在提高功率传输效率和密度中的作用。文章强调了现代电子设备日益增长的功率需求带来的挑战,并说明了GaN技术如何解决这些挑战。文章以EPC9195为例,展示了高功率密度USB PD充电器的设计,强调了GaN晶体管和模拟控制器在实现高效率和紧凑性方面的优势。实验结果证明了该设计的性能和效率,使其成为需要USB PD 3.1兼容性的下一代电子设备的理想解决方案。
型号- EPC9195,EPC2619,LTC7891
Intellectual Power Amplifier Module Based on GaN FETs
To simplify and accelerate the development process of many devices (D-class audio amplifiers, AC current and voltage calibrators, power supply modulators etc.), the idea of creating an Intellectual Power Amplifier Module (IPAM) appeared. IPAM is a fully differential pulsing power amplifier covered by a common negative feedback. The module contains small FPGA chip. The development of the output choke has turned into a separate R&D work related to the need to study the parameters of the newest high-frequency power ferrites manufactured by TDK/Epcos and Ferroxcube.
GaN Power Devices Achieve a High-Efficiency 48V, 1.2kW LLC Resonant Converter in a ⅛th Brick Size
EPC designed a 1.2kW resonant converter demo board (EPC9174) in an 1/8th brick form factor that achieves an impressive 97.3% peak efficiency.
氮化镓可靠性和寿命预测:第16阶段
描述- 本报告详细探讨了氮化镓(GaN)器件的可靠性,包括失效机制、测试方法以及在不同应用中的可靠性预测。报告重点介绍了测试至失效方法在确定GaN器件内在失效机制方面的作用,并提供了针对不同应用(如太阳能、DC-DC转换和激光雷达)的可靠性预测指南。此外,报告还讨论了热机械可靠性、过电压指南以及优化焊接工艺的方法。
型号- EPC2302,EPC2218A,EPC23102,EPC21701,EPC21601
SGM48524双通道5A、高速、低压侧栅极驱动器
描述- 该资料介绍了SGM48524是一款双通道高速低边门极驱动器,适用于功率开关。它具有轨到轨驱动能力,可提供高达5A的峰值电流,并具有良好的噪声免疫能力和快速传播延迟。该产品广泛应用于电源供应、DC-DC转换器、电机控制、太阳能等领域。
型号- SGM48524XPMS8G/TR,SGM48524,SGM48524XTDB8G/TR,SGM48524XS8G/TR
EPC2152 GaN Integrated Power Stage – Redefining Power Conversion
This complete power stage, the EPC2152 ePower™ Stage, can be driven at multi-megahertz frequencies and controlled by a simple ground-referenced CMOS IC, and with just a few added passive components, could become a complete DC-DC regulator. Integrated devices in a single chip are easier to design, easier to layout, easier to assemble, save space on the PCB, and increase efficiency.
EPC to Showcase Advanced GaN Power Solutions at PCIM Asia 2024
EPC’s GaN Experts will be available during PCIM Asia, showcasing the latest generation of GaN FETs and ICs in a wide variety of real-world applications including AI servers, robotics, and more.
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