【产品】专为高增益放大器应用设计的硅NPN达林顿功率晶体管裸片,电流放大系数最小值为10K
Central Semiconductor(美国中央半导体公司,简称Central)公司是世界顶级分立半导体制造商,Central推出的CP329V-MPSA28和CP329V-MPSA29都是硅NPN达林顿功率晶体管裸片,专为高增益放大器应用而设计。它们的实物如图1所示,具有高耐压、低饱和压降以及高增益系数等特点。
图1 CP329V-MPSA28和CP329V-MPSA29硅NPN达林顿功率晶体管产品示意图
CP329V-MPSA28和CP329V-MPSA29硅NPN达林顿功率晶体管在工作温度为25℃时,CP329V-MPSA28和CP329V-MPSA29都具有较高的耐压值,它们的集电极-基极电压最大额定值分别为80/100V,集电极-发射极电压的最大额定值分别为80/100V,发射极-基极电压的最大额定值均为12V。CP329V-MPSA28和CP329V-MPSA29的工作电流较低,其集电极持续工作电流最大额定值为0.5A。它们的存储和工作温度范围为-65~150℃,操作结温最高额定值为150℃,较宽的工作温度范围可以保证其能够适应较为恶劣的工业温度环境,满足大部分应用对于环境温度的需求,保证器件稳定性。
CP329V-MPSA28和CP329V-MPSA29硅NPN达林顿功率晶体管在工作温度为25℃的环境下,当VCB分别为60/80V时,CP329V-MPSA28和CP329V-MPSA29集电极-基极电流ICBO最大值均为100nA;当VCE分别为60/80V时,集电极-发射极饱和电流ICES最大值为500nA。它们的饱和压降VCE(SAT)在IC=100mA,IB=100μA时,最大值为1.5V。它们的特征频率fT在VCE=5.0V,IC=10mA,f=100MHz的条件下,最小值均为125MHz。
CP329V-MPSA28和CP329V-MPSA29硅NPN达林顿功率晶体管直流电流放大系数hFE在VCE=5.0V, IC=10mA或者IC=100mA的条件下,最小值均为10K。它们的输出电容在VCB=10V, IE=0, f=1.0MHz的条件下,最大值为8.0pF,可减少信号衰减和失真,保持信号的完整性。
图2 CP329V-MPSA28和CP329V-MPSA29硅NPN达林顿功率晶体管的典型电气特性图
CP329V-MPSA28和CP329V-MPSA29硅NPN达林顿功率晶体管机械参数
·裸片尺寸26.8x26.8MILS
·裸片厚度7.1MILS
·基极焊盘尺寸4.2X4.2MILS
·发射极焊盘尺寸4.3x4.3MILS
·晶圆直径5英寸
CP329V-MPSA28和CP329V-MPSA29硅NPN达林顿功率晶体管突出特点与优势
·集电极-基极电压最大额定值分别为80/100V
·集电极-发射极电压最大额定值分别为80/100V
·发射极-基极电压最大额定值为12V
·集电极连续电流IC最大额定值分别为0.5A
·工作和存储温度范围为-65至+150°C
·集电极-基极电流ICBO最大值均为100nA(VCB分别为60/80V)
·集电极-发射极饱和电流ICES最大值为500nA(VCE分别为60/80V)
·饱和压降VCE(SAT)最大值均为1.5V(IC=100mA ,IB=100μA);1.2V(IC=10mA, IB=10μA)
·直流电流放大系数hFE最小值均为10K(VCE=5.0V, IC=10mA或IC=100mA)
CP329V-MPSA28和CP329V-MPSA29硅NPN达林顿功率晶体管主要运用领域
·高增益放大器
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测试范围:扬兴晶振全系列晶体,通过对晶体回路匹配分析,调整频率、驱动功率和起振能力,解决频偏、不起振、干扰、频率错误等问题。技术专家免费分析,测完如有问题,会进一步晶振烧录/修改电路。
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