【产品】S6R16xxx1M系列16位异步快速SRAM，采用先进CMOS工艺，存储容量16M
NETSOL推出的S6R1616(V/C/W)1M和S6R1608(V/C/W)1M是一款存储容量按16(8)位组织为1M(2M)字，16,789,216位的高速静态随机存取存储器。S6R1616(V/C/W)1M(S6R1608(VC/W)1M)使用16(8)条公共输入和输出线，并具有一个输出使能引脚，该引脚的运行速度比读取周期中的地址访问时间快。S6R1616(V/C/W)1M允许通过数据字节控制来访问低字节和高字节数据。该系列存储器采用先进的CMOS工艺、基于6-TR的单元技术制造，专为高速电路技术而设计。它特别适用于高密度高速系统应用。
S6R1616(V/C/W)1M采用行业标准48TSOP1和48FBGA封装。S6R1608(V/C/W)1M采用工业标准44TSOP2和48FBGA封装。
特性
• 快速访问时间：8、10、12、15ns（最大值）
• CMOS低功耗
待机：（TTL）：35mA（最大值）
（CMOS)：28mA(最大值)
工作：
85mA（8ns，最大值）
75mA（10ns，最大值）
• 单3.3±0.3V或5.0±0.5V电源电压
-S6R16xxV1M：3.3±0.3V电源电压
-S6R16xxC1M：5.0±0.5V电源电压
• 电源范围广：S6R16xxW1M：1.65V~3.6V电源电压
• TTL兼容输入和输出
• 完全静态操作，无需时钟或刷新
• 三态输出
• 数据字节控制（x16模式） LB：I/O0~I/O7，UB：I/O8~I/O15
• 适用于1Mx16的标准48 TSOP1和48FBGA封装引脚配置
• 适用于2Mx8的标准44 TSOP2和48FBGA封装引脚配置
• 符合ROHS标准
• 在商业级和工业级温度范围内工作
绝对最大额定值参数*
*大于“绝对最大额定值”下列出的应力可能会对器件造成永久性损坏。 这只是一个额定应力，不暗示器件在这些或高于本规范操作部分中指示的任何其他条件下的功能操作。 长时间工作在绝对最大额定值条件下可能会影响可靠性。
推荐DC工作条件（TA=0~70℃，所列参数对于工业级温度范围内也有保证）
逻辑模块示意图- S6R1616(V/C/W)1M (1M x 16)
逻辑模块示意图- S6R1608(V/C/W)1M (2M x 8)
16M异步快速SRAM订购信息（1M x 16）
16M异步快速SRAM订购信息（2M x 8）
封装尺寸
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本文由西瓜头头大翻译自NETSOL，版权归世强硬创平台所有，非经授权，任何媒体、网站或个人不得转载，授权转载时须注明“来源：世强硬创平台”。
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描述- Netsol is a fabless memory semiconductor design house in South Korea, established in 2010. Netsol is developing and marketing non-commodity memory products with high standard of quality and reliability. Current products are Async Fast SRAM, Low Power SRAM, Sync SRAM, Quadruple/DDR SRAM and SLC NAND Flash.
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