32 Auto-grade 40~150V SGT MOSFET from JieJie MicroelectronicsIncreasingly Found Homes in Automobiles

The proliferation of autonomous driving, ADAS, electrification, and V2x result in the legacy components being increasingly replaced by power semiconductors like JSFET. For the past 26 years, JJM has been investing heavily in people, systems, state-of-the-art wafer fab. and assembly plants. JJM is committed to offering high-quality auto-grade power semiconductors to tier-1 automotive OEMs.

Of these 32 auto-grade devices, the dies inside and the A/T were all produced at manufacturing sites certified for IATF 16949. All devices passed the AEC-Q101 compliant tests. Outstanding electrical characteristics like R_DS(ON) of 1.3 ~ 29.0mΩ, Qg of 6.8 ~ 88.0nC, and FOM of 55 ~ 354 ensure reliable operation in harsh operating environments. 

In the thermally efficient SM-type PDFN3x3 / 5x6-8L/-D, TO-252/263-3/7L, materials used (lead frame, solder, epoxy, etc.) and the manufacturing steps (wire/clip bonding, dieattach, polyimide over die-top, etc.) are of MSL1 to minimize mechanical thermal stress. As such, stable operation over T_J=-55~175℃ resulted. All devices shipped are halogen-free & RoHS-compliant.

Key Aspects of 40~150V Q-grade JSFET^®

· Parametric Performance to Meet the Challenge 

Exceptional R_{DS(ON)_Typ} at down to 1.3mΩ, FOM as small as 55, and E_{AS_Max} as high as 889mJ lead to reliable operation under the harsh working environment typical of automobiles. 

· Robustness & Long-term Reliability 

All devices passed the stringent AEC-Q101 qualification @3 lots & T_J=175℃. Wafer and A/T production facilities are IATF 16949 certified for quality management. 

· Unclamped Inductive Switching Tested 

Fully UIS tested during production to confirm the device's ability to withstand the avalanche energy common in both resistive and inductive types of loads. 

· Robust & Thermal Efficient Packages 

SM-type PDFN3x3/5x6-8L/-D, TO-252-3L, TO-263-3/7L with high immunity to thermal-mechanical stress enable reliable operation under excessively low/high ambient temperature.

Market Applications

DC/DC boost for mini/LED backlighting in infotainment, LED driving in matrix headlights 

High/Low-side switching in POL DC/DC (e.g. HPC for automotive gateway & domain controller, SR rectification in OBC) 

Load switching in various vehicle electrical systems of ICEbased and new-energy PHEV/BEV

Power stages for low/medium-power BLDC/DC motor driving in BCM&fuel pump & EPS, wireless charging V_BUS power switch for USB PD 3.0/3.1 compatible DC output via USB Type-C^® connectors

Application Circuits

These 40 ~ 150V SGT MOSFETs are well suited for applications inside automobiles. Their long-term reliability was tested per AEC-Q101 quality standards. JMSL0406AGQ and its dual-die variant JMSL0406AGDQ are popular in the body control modules (BCM) for use cases like low-power DC motor driving. With R_DS(ON) down to 1.3mΩ, JMSH041AGQ fits the power efficiency requirement of mid/high-power DC motors. Typical applications are multi-way power seats, power tailgates, centralized door locks, and ESC (electronic stability control). At V_{DS_Max}=100V and assembled in the low-profile PDFN5x5-8L package, JMSL1018AGQ is good for LED backlighting in the flat panel display of the infotainment/ADAS unit. In contrast, JMSL1020AGDQ drives two strings of high-brightness LEDs simultaneously for backlighting in the larger panel.

Figure 1: DC/DC Boost in mini/LED Backlighting

Figure 2: DC / BLDC Motor Driving

Product Portfolio

Shipping Information