【应用】双N沟道MOSFET CMLDM7002A在PoE音频扬声器系统中的应用

2019-06-25 Central Semiconductor
双N沟道MOSFET,CMLDM7002A,Central Semiconductor 双N沟道MOSFET,CMLDM7002A,Central Semiconductor 双N沟道MOSFET,CMLDM7002A,Central Semiconductor 双N沟道MOSFET,CMLDM7002A,Central Semiconductor

采用PoE技术供电的音频扬声器,可以方便的安装在留有网线接头的任何位置而不需要其他的供电设备,既简单又节省成本,在现代楼宇装修中应用日益广泛。其系统拓扑结构如图1所示。语音信号通过网线传输给扬声器后,经过DSP解码、DAC数模转换,然后经过音频功放电路放大后由扬声器输出。PoE控制器负责为所有的硬件提供合适的电压。



图1.PoE音频扬声器系统拓扑图


对于图1中的音频放大电路,通常采用D类放大器(又称数字放大器),该类放大器相对于A类、B类、AB类等有更高的效率,在现代视听系统中应用广泛,其实现原理如图2所示。音频信号经过PWM调制后,驱动后级的MOSFET半桥电路(或者全桥)进行放大,然后经过低通滤波后得到幅值放大的音频信号,驱动后级的扬声器发声。D类放大器的性能主要取决MOSFET的性能指标,在开关过程中产生的功率损耗、死区时间以及电压、电流瞬间毛刺是造成音频失真的主要原因。因此此处应选择开关速度快、输出电容小、开关损耗低的MOSFET,同时MOSFET封装要尽可能的小,以有利于减小扬声器的体积。在此处的应用中,推荐Central公司生产的双N沟道增强型功率管CMLDM7002A,如图3所示,该MOSFET集成两输出电容COSS仅25pF,栅极电荷Qg(tot)仅0.592nC(Qg越小越易于驱动);开通和关断时间(ton,toff)仅20ns,能最大限度的减少死区时间,是Central公司专为高速脉冲放大器和驱动器而设计的功率管。


图2. D类功率放大器的原理图


图3. 采用SOT-563的CMLDM7002A


CMLDM7002A最大漏源电压VDS为60V,最大连续漏极电流ID为280mA,最大脉冲漏极电流可达1.5A,最大可承受350mW的功率损耗,适合小功率音频放大电路。栅极阀值电压1.0~2.5V,阀值电压低,可以用芯片的I/O管脚直接驱动而无需专门驱动芯片,有利于降低产品成本。在VGS=5V,ID=50mA时,导通压降VDS和导通阻抗rDS为分别为0.15V和3Ω;在VGS=10V,ID=500mA时为1V和2Ω,低导通阻抗和导通压降有利于降低系统损耗,提高放大器效率。CMLDM7002A内部集成两个N型MOSFET,并采用SOT-563封装,外形小,有利于减小产品的尺寸。工作和存储的器件结温为-65~+150℃,达到军工级的温度等级,可在苛刻的环境中应用。

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Application Brief Po E Audio Speakers

型号- CSMF03V3C,CBRHDSH1-200,CBRHDSH1-100,CMLT3820,CMLDM8002A,CBRLDSH2-100,CEDM7002AE,1SMB58CA,CFTVS5V0BULC,CMLT3474,CMLDM7002A,C4SMAFL58A,CMOZ5L1,CBRSDSH2-100,CMO5V0LC,CBRHDSH2-100,CMDZ5L1,CTLTVS5V0B,CEDM8004,CMOZ12L

2017/08/09  - CENTRAL SEMICONDUCTOR  - 应用笔记或设计指南 代理服务 技术支持 批量订货

Smartphone Application Brief

型号- CMUT3904,CMSH2-100M,CMOSH-3,CMKD4448,CMUT3906,CFSH01-30,CSL05D,CMNTVS12V,CMNDM8001,CMPT491E,CMDFSHC3-100,CMLSH05-4,CMLD4448,CMOZ15V,CMF12A,CEDM7001,CMUT2222A,CMLM0584,CMF5.0A,CMDFSHC5-100,CMST2222A,CMDD2004,CMAD4448,CMLSH1-40,CMLDM8002A,CTLSH01-30L,CMLDM7002A,CMNDM7001,CMOZ3V3,CMUT7410,CMPDM7120G,CMLDM7120G,CEDM8001,CEDM8004,CMUT3410,CMLM0574

0321  - CENTRAL SEMICONDUCTOR  - 应用及方案  - R1 代理服务 技术支持 批量订货

Application Brief Hearing Aid

型号- CMUT3904,CMUT3906,CSL05D,CMNTVS12V,CMNDM8001,CMLSH05-4,CMLD4448,CMLT3904E,CMLT3906E,CMUDM8001,CMLM0584,CMBT3904E,CMAD4448,CMNT3904E,CMBT3906E,CMNT3906E,CMLDM8002A,CMLDM7002A,CMNDM7001,CMASH-4,CMRD6263DO,CSL05,CMOZ3V3 THRU CMOZ12V,CMUDM7001,CMRSH-4DO,CMLM0574

2017/08/09  - CENTRAL SEMICONDUCTOR  - 应用笔记或设计指南 代理服务 技术支持 批量订货

【产品】小信号超小封装场效应管,漏极电流ID覆盖范围从0.1A~11A

Central Semiconductor小信号超小封装场效应管:CEDM8001 CEDM7001 CMLDM7002A,最小体积只有1.05*0.65*0.32mm

2018-10-08 -  新产品 代理服务 技术支持 批量订货

Central Semiconductor提供小信号晶体管、桥式整流器等多种器件用于PoE受电设备

有源以太网(PoE)市场的出现推动了外围受电设备(PD)的快速增长,例如相机、电话和网络接入点。这些应用中的每一个都有独特的尺寸和性能要求。Central Semiconductor开发了多种器件,包括肖特基桥式整流器,它们最适合这些应用所需的尺寸和电气规格。

2021-12-10 -  原厂动态 代理服务 技术支持 批量订货

【选型】PoE音频扬声器中,用于音频放大模块上的小信号晶体管、MOSFET和齐纳二极管选型推荐

PoE音频扬声器的音频放大电路中,Central推荐使用小信号晶体管(CMLT3820/CMLT3474);MOSFET(CMLDM7002A/CMLDM8002A)和齐纳二极管(CMOZ5L1),可以为音频放大电路提供有效的小信号反馈,同时还可以提供稳定的工作电压/电流,以及出色的瞬态电压抑制能力,避免外界因素对音频放大过程的不利影响。

2019-08-11 -  器件选型 代理服务 技术支持 批量订货
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功率MOSFET管检测:动静态参数/热特性/高低温性能/可靠性等参数测试

可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。

实验室地址: 西安 提交需求>

位移传感器量程定制

可定制位移传感器量程范围10~600mm,该YWD型位移传感器表面有带刻度的透明窗☐,每毫米的变化量误差不超过3ue/mm,可在静态、准静态和低频动态下工作。主要指标:非线性<0.2%;供桥电压<10v;测试精度:0.01mm。

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