EPC Launches 400 W Motor Drive Demonstration Powered by GaN Integrated Power Stage
The EPC2152 ePower™ Stage enables higher performance and smaller solution size for high performance, low-cost BLDC motors as demonstrated in the EPC9146 demonstration board.
EL SEGUNDO, Calif.— May 2021 — EPC announces the availability of the EPC9146, a 400 W Motor Drive Demonstration. The EPC9146 power board contains three independently controlled half-bridge circuits, featuring the EPC2152 monolithic ePower™ Stage with integrated gate driver, 80 V maximum device voltage, 15 A (10 ARMS) maximum output current. The inverter board measures just 81 mm x 75 mm and achieves an efficiency of greater than 98.4% at 400 W output power.
The EPC9146 can be paired with individually designed mating boards allowing the user to control the power board directly through various mainstream microcontroller boards leveraging existing resources for quick development. The EPC9146 can be configured to support multiple applications including three-phase motor drives for robotics, drones, e-bikes, e-scooters, multiphase interleaving buck converters, and full-bridge converters.
“eGaN® FETs and integrated circuits provide the fast switching, small size, and low cost needed to further reduce the size and weight of BLDC motors, reduce audible noise, improve torque for faster reaction times, and increase efficiency," said Alex Lidow, CEO of EPC. “The EPC9146 is an ideal example of the capabilities of the integrated power stage, EPC2152, to expand the application areas that can take advantage of the design simplification and performance improvements that GaN offers.”
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本文由付浩转载自EPC,原文标题为:EPC Launches 400 W Motor Drive Demonstration Powered by Gallium Nitride (GaN) Integrated Power Stage for More Efficient, Quieter, and Smaller Motors,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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目录- eGaN FETs and ICs eGaN® Integrated Circuits Half-Bridge Development Boards DrGaN DC-DC Conversion Lidar/Motor Drive AC/DC Conversion
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产品型号
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品类
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Configuration
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VDSmax(V)
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VGSmax(V)
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Max RDS(on) (mΩ)
@ 5 VGS
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QG typ(nC)
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QGS typ (nC)
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QGD typ (nC)
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QOSS typ (nC)
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QRR(nC)
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CISS (pF)
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COSS (pF)
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CRSS (pF)
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ID(A)
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Pulsed ID (A)
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Max TJ (°C)
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Package(mm)
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Launch Date
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EPC2040
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Enhancement Mode Power Transistor
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Single
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15
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6
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30
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0.745
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0.23
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0.14
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0.42
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0
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86
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67
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20
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3.4
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28
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150
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BGA 0.85 x 1.2
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Apr, 2017
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