【经验】解析用于多轴通用运动控制板卡中的RS485芯片静电及雷击ESD保护二极管整改案例
本文对用于多轴通用运动控制板中的RS485芯片静电及雷击ESD保护二极管整改案进行详细介绍,具体如下:
案例问题描述
客户大致的系统构架情况,通过手持的控制面板通过485接口发指令去控制多轴通用运动控制板,再去控制电机的运动情况;目前客户在使用过程中偶尔会出现控制错误(无法控制、不能识别板卡)的情况,初步分析判定此问题可能是产品在使用过程中,因RS485的A/B接口走线为普通线缆(未双绞及屏蔽)且与厂区其他电力线平行捆绑走线,脉冲干扰电压耦合到RS485的A/B接口,引起RS485芯片及485前端现有防护电路损坏,最终导致出现前文所说的控制错误的问题。
为模拟在上述可能出现的脉冲干扰情况,优恩分别进行了ESD静电放电及雷击浪涌测试;
图 1 系统控制框图
案例整改过程
在客户控制板什么都不改动的情况下,按照IEC 61000-4-2的标准进行空气8KV,接触4KV的静电放电测试。
图 2 静电测试布局图
在静电测试过程中出现客户描述的控制异常情况(直接无法识别控制板卡),后经分析发现为RS485通讯芯片损坏导致,客户现有的ESD防护元器件SM712性能正常;更换优恩RS485芯片,型号为UN485E,继续测试会出现控制异常问题,重新上电启动后异常消失。
图 3 更换优恩半导体485芯片UN485E
结合前面的测试情况及客户的现有防护电路来分析,此种情况可能是客户在A/B端口加的防护器件选型不当导致,为验证此问题,更换前端防护元器件SM712为SMBJ6.0CA,继续测试,通过接触±6KV及空气±8KV各40次的静电放电试验,再未出现控制异常问题。
图 4 更换优恩半导体的防护元器件型号SMBJ6.0CA
为进一步验证电路的抗脉冲干扰电压的能力,按照IEC 61000-4-5的标准进行模拟雷击浪涌试验,通过差、共模2KV的浪涌试验(±5次),试验结束后产品控制正常。
图 5 浪涌测试布局图
案例分析总结
在防护器件选型时,需要注意ESD器件的反向截止电压VRWM,反向截止电压越高,对应的击穿电压VBR及保护以后的钳位电压VC亦会越高,对后面电路的保护效果就会越差;
同样的浪涌电流施加在不同功率的ESD/TVS上,功率越大、IPP越大的防护器件对应的钳位电压相对要低,综上所述,优恩体建议客户把小功率ESD器件SM712更换为击穿电压更低,功率及浪涌承受能力更强的TVS管SMBJ6.0CA。
优恩推荐RS485接口过压、静电、浪涌及高压错接防护电路。
图 6 RS485推荐防护电路
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本文由三年不鸣转载自优恩半导体,原文标题为:多轴通用运动控制板卡RS485静电及雷击ESD保护二极管整改案例,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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SERIES,SA90C,10D241K,SMD0805-010,10SMBJ180A,14D431K,LCDA05C-8,LCDA05C-4,25D,P6KE220CA,SA40CA,ESD05V32D-C,HCM1012GD900B05,10SMBT7.5A,ESD05V88D-CBP,10D821KEC,SMD0805-005,UN2E8-150ML,UN1812-760HS,ESD05V88D-CBD,SMCJ64A-AT,SMBJ48CA-AT,P3800TB,TPSMBJ30A,P3800TA,SMDJ90,UN3220-471HS,P6KE100CA,5KP28C,SMDT7.0A,P6SMB SERIES,5KP28A,14D681KJ,TPSMA100A,P3800SC,P3800SB,SMDJ85,6.0SMAJ54CA,ESD30V12D-C,P3800SA,ESD30V12D-A,SMDJ80,SMAJ8.5CA,SMAJ180C,SMAJ180A,UN2E5-90LSMD,TP5.0SMDJ40A,SMDJ75CA-AT,20D122KJ,10SMBT36A,ESD3.3V04D-LC,SMAJ350CA-AT,14D361KSC,5.0SMDJ220A,SMDJ78,UN30-160,UN16-900,ESD05V08P-LC,SMDJ75,25D121K,5KP8.0C,14D561KJ,SMDJ70,5KP8.0A,UN2K8-450L,1.5SMC10A,UN0805-420H,TPSMA6J26CA,SMDJ16CA,SMCJS SERIES,14D560K,SMBJ130C,SMBJ130A,5.0SMDJ350A,SMDJ64,SMDJ60,34S210J,5KP120CA,ESD12V52D-CF,30KP120A,UNS3220 SERIES,SMDJ43A-AT,SMDJ58,UN30-185,SMDJ54,P6KE75,10SMBJ7.0CA,SMDJ51,UN2E5-3600LL,20KP132A,SMAJ160CA-AT,10SMBT7.0A,UN2K8,P6KE62CA,UN30-135,SMDJ48,P6KE68,SMDJ45,SMDJ43,UNB-401M,SMDJ40,TPSMA36CA,P6KE82,ESD15V02D-CKN,5.0SMDJ78C,SMCJ7.0C,SMDT7.5A,5.0SMDJ78A,SMCJ7.0A,SMDJ51CA,5.0SMDJ48CA,UN111B339HWA1DFL,15KP51A,TPSMDJ,SMDJ36,SMDJ33,25D751KJ,P4SMA220A,SMDJ30,10SMBJ60A,P6KE91,KB-380,SM8Z26A,ESD3.3V12D-A,ESD3.3V12D-C,SMD1812-200-16V,TPSMCJ,UN2H8-5000LL,SMDJ28,5KP8.5C,SMDJ26,5KP8.5A,SMDJ24,UN2K8-600,SMDJ22,SMDJ20,UN1210-151H,SMD0805-110-12V,SMBJ11A-AT,07D331KJ,ESD0402M,UN16 SERIES,14D751KSC,SMD1812-300-16V,SM8Z28A,SMDJ19,ESD12V52D-HA,SMDJ18,SMDJ17,SMDJ16,TPSMB10J16CA,SMDJ15,TPSMBJ,SMDJ14,TPSMB56CA,SMDJ13,SMDJ12,SMDJ11,SMDJ10,SMCJ36A,SMD0805-010-30V,P6KE30,32D621KJ,SMCJ36C,SA190CA,5.0SMDJ75C,5.0SMDJ75A,UNA-SMD,15SMBJ160CA,SMF54CA,TPSMA6J18A,P4SMA91A,P6KE27,TPSMAJ,P6SMB170A,P0300DM,UN1812-390HS,P6KE24,P6KE22,P6KE43,SMCJ45CA,UN3E8-200HSMD,UN0603E,P6KE75CA,P0300EA,P0300EB,P0300EC,P6KE39,TPSMA6J19A,UN2H8,P6KE36,TCF03025U12002A SERIES,P6KE33,10SMBJ64A,SMCJ58CA,P6KE51,TPSMBJ110CA,SMDJ180CA-AT,25D511KJ,SMD1206-300,SMDJ7.5CA,TPSMA75A,UN1812-270HS,5.0SMDJ17A-AT,1.5KE18CA,14D201KJ,UN30-110,BLC03C-4,UN2K8-350L-2,5.0SMDJ70CA,UN2E5,UN2K8-350L-1,SMCJ33A,P6KE47,SMCJ33C,TPSMA6J16A,UN2E8,UN2E8-150HL,P4SMA350A,P6KE62,P4SMA6.8CA,ESD03V23T-LC,ESD03V23T-LA,ESD08V52D-A,15SMBJ180A,14D301K,10SMBT30A,P6KE56,ESD08V52D-C,TPSMA6J17A,5.0SMDJ33CA,UNS3K,UN2E6-SMD SERIES,UN1812-390H,TPSMDJ24CA,20D361K,40D361KJ,4.0SMF13CA,SMDJ160A,SMBJ160CA-AT,TP5.0SMDJ28A,
【元件】优恩全新推出面向USB3.1/HDMI2.1等高速数据接口EOS/ESD静电保护器件
优恩半导体全新推出面向USB3.1/HDMI2.1等高速数据接口EOS/ESD静电保护器件,采用深回扫(Deep Snap Back)工艺,有效降低TVS管VC残压值。采用CSP封装技术,大幅降低了TVS管电容值。小体积:DFN0603、DFN1006封装。
优恩半导体TVS瞬态电压抑制二极管选型表
优恩半导体提供以下技术参数的TVS选型:反向截止电压:3.3V~440V;击穿电压(min):5.2V~492V;击穿电压(max):6V~543V;测试电流:1mA、5mA、10mA;最大钳位电压 VC @IPP (V):8V~713V;最大峰值脉冲电流IPP (A):0.56A~3000A;最大反向漏电流IR @VRWM (μA):1uA~1000μA;关断电压:10V~85V;最大反向浪涌电流IPP(A):48A~388A;最大IR @VRWMTJ=175(uA):150uA、250uA。
产品型号
|
品类
|
Reverse Stand-Off Voltage VRWM(V)
|
Breakdown Voltage VBR (V) @IT MIN
|
Breakdown Voltage VBR (V) @IT MAX
|
Test Current IT (mA)
|
Maximum Clamping Voltage VC @IPP (V)
|
Maximum Peak Pulse Current IPP (A)
|
Maximum Reverse Leakage IR @VRWM (μA)
|
model
|
8KP24A
|
Axial Lead Transient Voltage Suppressors
|
24
|
26.7
|
29.5
|
1
|
38.9
|
206
|
5
|
Uni
|
选型表 - 优恩半导体 立即选型
优恩半导体ESD、PPTC、GDT用于CAN总线浪涌保护,可大幅缩减单板占用体积
优恩半导体在本文将对CAN总线浪涌保护之自恢复保险丝选型进行详细的讲解,为工程师们的设计提供理论基础。
解析TVS管的四大特点:快相应、低压放电、强吸收能力、可重复使用
在保护电子设备安全的战斗中,瞬态抑制二极管(Transient Voltage Suppressor)简称TVS管,正是不可或缺的利器。本文中优恩半导体将为大家介绍TVS管的四大特点:快相应、低压放电、强吸收能力、可重复使用。
DC24V电源端口浪涌保护
DC24V电源端口浪涌保护DC24V电源是一种为设备提供稳定、可靠的直流电压输出的电源,其广泛应用于工业自动化控制系统。此方案设计为多级保护的方式,初级采用通流能力较强的陶瓷气体放电管和压敏电阻组合来承受泻放大的浪涌电流,中间使用电感做退耦,次级选用响应电压精准、稳定且快速的TVS管做保护,能有效抑制各类浪涌过电压,使后端的DC芯片及电路得到全面的保护。
【技术】浅析瞬态抑制二极管(双向TVS管)
TVS管也叫瞬态抑制二极管,TVS管是吸收浪涌功率用的,能在极短时间内承受反向电压冲击,使两极间的电压钳位于一个特定电压上,避免后面的电路受到冲击。简单的说就是做过压保护的,在通信等产品中很常见。连接时必须反向工作在电路电源、地两端,与稳压二极管类似,但不需要限流电阻。
电子商城
品牌:硕凯电子
品类:Surface Mount Transient Voltage Suppressors
价格:¥0.2000
现货: 223,965
品牌:硕凯电子
品类:ESD Protection Transient Voltage Suppressors Array
价格:¥0.2250
现货: 6,950
现货市场
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