Silicon Carbide cooperation between SEMIKRON and ROHM Semiconductor: ROHM’s SiC technology empowers SEMIKRON’s eMPack® for the next generation of electric vehicles

2022-07-21 ROHM

Nuremberg/Willich – July 14th, 2022: SEMIKRON, headquartered in Nuremberg, and the Kyoto-based company ROHM Semiconductor have been collaborating for more than ten years with regard to the implementation of silicon carbide (SiC) inside power modules. Recently, ROHM’s latest 4th generation of SiC MOSFETs has been fully qualified in SEMIKRON’s eMPack® modules for automotive use. Hence, both companies serve worldwide customers' needs.

The picture at the partnership ceremony
Karl-Heinz Gaubatz, CEO and CTO at SEMIKRON (left), Peter Sontheimer, CSO at SEMIKRON (right)Wolfram Harnack, President at ROHM Semiconductor GmbH (center)

SEMIKRON announced it had secured a billion-Euro contract to supply its innovative eMPack® power modules to a major German car maker, beginning in 2025. The company developed a fully sintered assembly and connection technology ‘Direct Pressed Die’(DPD). This enables extremely compact, scalable, and reliable traction inverters. The eMPack® module technology has been specially designed for SiC-based converters of medium and high power in order to fully exploit the properties of the new semiconductor material. In addition, SEMIKRON provides evaluation boards for eMPack® that incorporate ROHM's gate driver ICs, helping customers shorten the time required for evaluation and adoption. In the future, SEMIKRON also plans to use ROHM's IGBTs in modules for industrial applications.


"Thanks to ROHM's SiC technology, SEMIKRON's innovative eMPack family of power modules is ready to make a significant contribution to reducing emissions through e-mobility," says Karl-Heinz Gaubatz, CEO and CTO at SEMIKRON. "ROHM’s SiC technology provides more efficiency, performance, and reliability in automotive and also industrial applications."

               SEMIKRON’s eMPack® Power Module                          Evaluation board for eMPack®                                                                                               equipped with ROHM’s gate driver IC

ROHM produces SiC components in-house in a vertically integrated manufacturing system and thus delivers high-quality, energy-saving products while achieving a constant market supply. ROHM’s production subsidiary SiCrystal, located in Nuremberg, Germany, plans to strongly grow its silicon carbide wafer capacities and human resources – to produce several 100,000 substrates a year.


“We are glad that SEMIKRON has selected ROHM as SiC supplier for the automotive qualified eMPack®. This partnership leads to a competitive solution for inverter application use inside electrical vehicles,” states Isao Matsumoto, President, and CEO of ROHM Co., Ltd. “ROHM offers a broad portfolio of SiC devices – from chips to packages. As the demand for SiC will continue to grow, ROHM will accelerate further investment and product development based on the technology we have cultivated as a leading SiC manufacturer. In addition, our company will continue to propose solutions and deliver customer support," Isao Matsumoto continues.


ROHM has been a leader in SiC device technology and products since it began the world's first mass production of SiC MOSFETs. ROHM’s latest 4th generation of SiC MOSFETs, which has been adopted by SEMIKRON, provides industry-leading low ON resistance with improved short-circuit withstand time. These characteristics contribute significantly to extending the driving length and miniaturizing the batteries of EVs when they are used in traction inverters. Thus, the company develops advanced, energy-saving SiC devices that reduce environmental impact.


Both companies will continue to contribute to automotive technology innovations by providing optimal power solutions that meet market needs through the fusion of ROHM's device/control technologies and SEMIKRON's module technologies that can optimally combine them.


"Thanks to ROHM's SiC technology, SEMIKRON's innovative eMPack family of power modules is ready to make a significant contribution to reducing emissions through e-mobility," says Karl-Heinz Gaubatz, CEO and CTO at SEMIKRON. "ROHM’s SiC technology provides more efficiency, performance, and reliability in automotive and also industrial applications."


ROHM produces SiC components in-house in a vertically integrated manufacturing system and thus delivers high-quality, energy-saving products while achieving a constant market supply. ROHM’s production subsidiary SiCrystal, located in Nuremberg, Germany, plans to strongly grow its silicon carbide wafer capacities and human resources – to produce several 100,000 substrates a year.


“We are glad that SEMIKRON has selected ROHM as SiC supplier for the automotive qualified eMPack®. This partnership leads to a competitive solution for inverter application use inside electrical vehicles,” states Isao Matsumoto, President, and CEO of ROHM Co., Ltd. “ROHM offers a broad portfolio of SiC devices – from chips to packages. As the demand for SiC will continue to grow, ROHM will accelerate further investment and product development based on the technology we have cultivated as a leading SiC manufacturer. In addition, our company will continue to propose solutions and deliver customer support," Isao Matsumoto continues.


ROHM has been a leader in SiC device technology and products since it began the world's first mass production of SiC MOSFETs. ROHM’s latest 4th generation of SiC MOSFETs, which has been adopted by SEMIKRON, provides industry-leading low ON resistance with improved short-circuit withstand time. These characteristics contribute significantly to extending the driving length and miniaturizing the batteries of EVs when they are used in traction inverters. Thus, the company develops advanced, energy-saving SiC devices that reduce environmental impact.


Both companies will continue to contribute to automotive technology innovations by providing optimal power solutions that meet market needs through the fusion of ROHM's device/control technologies and SEMIKRON's module technologies that can optimally combine them.

授权代理商:世强先进(深圳)科技股份有限公司
技术资料,数据手册,3D模型库,原理图,PCB封装文件,选型指南来源平台:世强硬创平台www.sekorm.com
现货商城,价格查询,交期查询,订货,现货采购,在线购买,样品申请渠道:世强硬创平台电子商城www.sekorm.com/supply/
概念,方案,设计,选型,BOM优化,FAE技术支持,样品,加工定制,测试,量产供应服务提供:世强硬创平台www.sekorm.com
集成电路,电子元件,电子材料,电气自动化,电机,仪器全品类供应:世强硬创平台www.sekorm.com
  • +1 赞 0
  • 收藏
  • 评论 0

本文由叫我大表哥吧转载自ROHM,原文标题为:Silicon Carbide cooperation between SEMIKRON and ROHM Semiconductor: ROHM’s SiC technology empowers SEMIKRON’s eMPack® for the next generation of electric vehicles,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。

相关研发服务和供应服务

评论

   |   

提交评论

全部评论(0

暂无评论

相关推荐

SiC MOSFETs from ROHM Chosen by Lucid for Efficient On-board Charging of Groundbreaking Luxury Electric Vehicle

ROHM has announced that Lucid is using its silicon carbide metal-oxide-semiconductor field effect transistor (SiC MOSFET) in the ground-breaking Lucid Air.

2022-03-11 -  原厂动态 代理服务 技术支持 现货查询 批量订货

罗姆第4代SiC MOSFET相对IGBT显著提升车载主驱逆变器效率,延长电动汽车的续航里程

罗姆通过进一步改进自有的双沟槽结构,使第4代SiC MOSFET具有低导通电阻、优秀的短路耐受时间、低寄生电容、低开关损耗等优点。凭借高性能元器件以及丰富的支持工具,罗姆将助力设计人员为未来的电力电子系统创建可行且节能的解决方案。

2022-03-09 -  原厂动态 代理服务 技术支持 现货查询 批量订货

ROHM第四代SIC MOSFET大公开!不牺牲短路耐受时间即可实现超低导通电阻,适用于车载逆变器和开关电源

ROHM推出的第4代SiC MOSFET,在不牺牲短路耐受时间的情况下实现超低导通电阻,适用于车载逆变器和各种开关电源。于2020年完成开发的第4代SiC MOSFET,是在不牺牲短路耐受时间的情况下实现业内超低导通电阻的产品,目前不仅可供应裸芯片,还可供应分立封装的产品。

2022-03-17 -  原厂动态 代理服务 技术支持 现货查询 批量订货

ROHM Offers the Industry’s Largest* Library of LTspice® Models at Over 3,500 by Adding SiC and IGBTs

ROHM has expanded the library of SPICE model lineup for LTspice® of its circuit simulator. LTspice® is also equipped with circuit diagram capture and waveform viewer functions that make it possible for designers to check and verify in advance whether the circuit operation has been achieved as designed. In addition to the existing lineup of bipolar transistors, diodes, and MOSFETs, ROHM has added SiC power devices and IGBTs that increases its number of LTspice® models to more than 3,500 for discretes (which can be downloaded from product pages).

2023-12-13 -  产品 代理服务 技术支持 现货查询 批量订货

ROHM(罗姆) SiC(碳化硅)MOSFET选型指南(中文)

描述- SiC MOSFET原理上在开关过程中不会产生拖尾尾电流,可高速运行且开关损耗低。低导通电阻和小型芯片尺寸造就较低的电容和栅极电荷。此外,SiC还具有如导通电阻增加量很小的优异的材料属性,并且有比导通电阻可能随着温度的升高而上升2倍以上的硅(Si)器件更优异的封装微型化和节能的优点。

型号- SCT3160KL,SCT4062KR,SCT3030KLHR,SCT4013DE,SCT3080AW7,SCT2450KE,SCT3160KW7,SCT2H12NZ,SCT4062KW7HR,SCT2450KEHR,SCT4013DR,SCT3060ALHR,SCT3040KRHR,SCT3060ARHR,SCT3040KLHR,SCT4036KEHR,SCT4045DRHR,SCT3022KLHR,SCT2160KE,SCT3080KW7,SCT3017ALHR,SCT3022AL,SCT3080ALHR,SCT3060AR,SCT3105KLHR,SCT4036KR,SCT3060AL,SCT4026DEHR,SCT4062KRHR,SCT3040KR,SCT2080KE,SCT3080KR,SCT3105KRHR,SCT3120AL,SCT4013DW7,SCT3030KL,SCT4062KWAHR,SCT4062KE,SCT3080ARHR,SCT4036KW7,SCT2280KEHR,SCT3120ALHR,SCT2280KE,SCT4062KWA,SCT3030AR,SCT3030AL,SCT3030AW7,SCT4036KRHR,SCT4045DEHR,SCT3120AW7,SCT3040KL,SCT3105KW7,SCT2080KEHR,SCT4018KW7,SCT4045DWA,SCT3080KL,SCT3030ALHR,SCT4062KW7,SCT3040KW7,SCT3022ALHR,SCT3030ARHR,SCT4045DW7,SCT3017AL,SCT4036KE,SCT4018KE,SCT4045DE,SCT4026DW7,SCT4062KEHR,SCT3080AR,SCT4026DW7HR,SCT4026DE,SCT4026DWA,SCT3160KLHR,SCT3080AL,SCT4045DW7HR,SCT4045DR,SCT2160KEHR,SCT3022KL,SCT4018KR,SCT4026DR,SCT4045DWAHR,SCT3105KL,SCT3160KW7HR,SCT3105KR,SCT3080KLHR,SCT3060AW7,SCT4026DRHR,SCT3080KRHR,SCT4026DWAHR

2024/2/27  - ROHM  - 选型指南 代理服务 技术支持 现货查询 批量订货 查看更多版本

IGBTs: Market Insights, Growth, and Global Trends

The demand for IGBTs (Insulated Gate Bipolar Transistors) has surged recently, fueled by the swift advancements in technology, especially in the electric vehicle, solar energy, energy storage markets, and industrial sectors. These specialized power semiconductor devices act as switches in various applications, particularly in the automotive and grid-related industries.

2024-11-21 -  行业资讯 代理服务 技术支持 现货查询 批量订货

【经验】以SIC MOSFET SCT3040KR为例说明SiC MOS应用中Vds关断尖峰的应对策略

在SiC MOS应用中,通常在mos关断过程中存在较大的Vds尖峰,主要原因在Turn ON 时流过的电流的能量储存在线路和基板布线的寄生电感中,并与开关元件的寄生电容共振所产生的。本文将以ROHM SiC MOSFET SCT3040KR为例说明SiC MOS应用中Vds关断尖峰的应对策略。

2019-11-28 -  设计经验 代理服务 技术支持 现货查询 批量订货

ROHM(罗姆)SiC(碳化硅)MOSFET选型指南(英文)

目录- SiC MOSFETs   

型号- SCT3160KL,SCT4062KR,SCT3030KLHR,SCT4013DE,SCT3080AW7,SCT2450KE,SCT3160KW7,SCT2H12NZ,SCT4062KW7HR,SCT2450KEHR,SCT4013DR,SCT3060ALHR,SCT3040KLHR,SCT4036KEHR,SCT4045DRHR,SCT3022KLHR,SCT2160KE,SCT3080KW7,SCT3017ALHR,SCT3022AL,SCT3080ALHR,SCT3060AR,SCT3105KLHR,SCT4036KR,SCT3060AL,SCT4026DEHR,SCT4062KRHR,SCT3040KR,SCT2080KE,SCT3080KR,SCT3120AL,SCT4013DW7,SCT3030KL,SCT4062KE,SCT4036KW7,SCT2280KEHR,SCT2280KE,SCT3030AR,SCT3030AL,SCT3030AW7,SCT4036KRHR,SCT4045DEHR,SCT3120AW7,SCT3040KL,SCT3105KW7,SCT2080KEHR,SCT4018KW7,SCT3080KL,SCT3030ALHR,SCT4062KW7,SCT3040KW7,SCT3022ALHR,SCT4045DW7,SCT3017AL,SCT4036KE,SCT4018KE,SCT4045DE,SCT4026DW7,SCT4062KEHR,SCT3080AR,SCT4026DW7HR,SCT4026DE,SCT4036KW7HR,SCT3080AL,SCT4045DW7HR,SCT4045DR,SCT2160KEHR,SCT3022KL,SCT4018KR,SCT4026DR,SCT3105KL,SCT3105KR,SCT3080KLHR,SCT3060AW7,SCT4026DRHR

2022/8/3  - ROHM  - 选型指南  - Edition 2022 代理服务 技术支持 现货查询 批量订货 查看更多版本

ROHM’s New 1200V IGBTs Achieve Industry-Leading Low Loss Characteristics with High Short-Circuit Tolerance

ROHM has developed automotive-grade AEC-Q101 qualified 4th Generation 1200V IGBTs that combine class-leading low loss characteristics with high short-circuit resistance, contributing to higher efficiency in automotive electric compressors and inverters for industrial equipment.

2024-11-13 -  产品 代理服务 技术支持 现货查询 批量订货

ROHM提供支持电力电子仿真工具PSIM™的第4代SiC MOSFET仿真模型

全球知名半导体制造商ROHM(总部位于日本京都市)开始提供支持电力电子仿真工具PSIM™的第4代SiC MOSFET仿真模型。该模型可在Altair® US公司开发的电力电子和电机控制用的电路仿真工具PSIM™中使用。设计人员可从ROHM官网下载模型文件,轻松进行系统级评估。这一进展使得在更广泛的产业领域中进行高效设计和评估成为可能,并能进一步推动功率元器件的使用。

2024-09-15 -  产品 代理服务 技术支持 现货查询 批量订货

SiC MOSFET损耗计算方法:通过波形的线性近似分割来计算损耗的方法

本文ROHM将介绍根据在上一篇文章(《SiC MOSFET损耗计算方法:开关波形的测量方法》)中测得的开关波形,使用线性近似法来计算功率损耗的方法。

2024-05-25 -  技术探讨 代理服务 技术支持 现货查询 批量订货

ROHM’s New PWM Controller ICs with SOP Package for Power Supply in a Wide Variety of Industrial Applications

ROHM has developed external FET-type controller ICs utilizing PWM current control mode optimized for AC-DC power supply in various industrial applications. Mass production has begun for four variants designed to drive a wide range of power semiconductors.

2024-10-10 -  产品 代理服务 技术支持 现货查询 批量订货

SiC MOSFET 5kW 高效率无风扇逆变电路

描述- 采用了发挥碳化硅(SiC)MOSFET高频特性的Trans-link交错型逆变电路(1)、实现了5kW时的功率转换效率达到99%以上。在该电路拓扑中,平滑电抗器的电感量可以减小。由于电抗器的匝数减少、使铜损大幅度减少实现了高效率。在这份资料中,介绍这个全新的逆变器设计的例子。

型号- PS2501L-1,MCR18ERTJ200,NJM78L05UA,MCR03EZPJ332,MCR03EZPJ334,RK73B1JTTD104J,PC092-01-00,B4B-XH-A,TR10P,DE1E3KX222MA4BN01,RK73B1JTTD472J,GRM188B31H104KA92,RB751S-40,MB3P-90,RK73B2BTTD105J,RK73B2BTTD4R7J,PH-1X10RG2,RK73B1JTTD103J,B5B-PH-K-S,PH-2X09SG,SSM3K318T,GRM1851X1H472JA44,KRB-408,GRM188B11H103KA01,HOT-2608B,ELXZ350ELL101MF15D,TLP700A,SCT3030AL,GRM188R11H104KA93,MCR10ERTJ4R7,TC4069UBF,RK73B1JTTD102J,PC045-00-00,S4B-EH,MOSX1C1R0J,NJM431U,GRM185B31E105MA12,DE1E3KX102MA4BN01,2SCR542P,GRM188R71E104KA01,PH-2X04SG,FHU-2×4SG,MCR10EZPJ105,PH-2X08SG,RK73B1JTTD153J,RK73B1JTTD101J,MCR03EZPJ101,ADR-48-50-0R5YA,MCR03EZPJ102,MCR03EZPJ103,24LC64SN,EG01C,MCR03ERTJ302,CQ-3303,CT-6E-P5KΩ,TR008A,1SS355,NE555D,ECQE6103KF,MCR18ERTJ4R7,ES1A,GRM188B11H102KA01,PC089-01-00-50P,NJM2732M,BFC233920105,MB4P-90,MCR03ERTJ331,B3P-VH,TBD,STR-A6079M,ACPL-C87AT,SCS212AM,MCR18ERTJ1R0,TRANS-LINK,GRM1851X1H222JA44,2SAR542P,MOSX1C334J,MCR03ERTJ202,FHU-2X9SG,VDCT,UDZS5.1B,ECQE6104KF,ELXZ100ELL681MF15D,S3B-EH,RK73B1JTTD271J,2SC3325,PH-1X04SG,MCR03EZPJ152,GRM188R71E105KA12,ELXS451VSN561MA50S,GRM21BR71E105KA99,MCR03ERTJ470,RK73B1JTTD470J,SCT3017AL,RK73B2BTTD563J,RK73B1JTTD000J,TA48M05F,MCR03ERTJ102,MCR03ERTJ103,SBR1U150SA-13,FHU-2X8SG,450MPH105J,UCS2W220MHD

2021.10  - ROHM  - 应用笔记或设计指南  - Rev.001 代理服务 技术支持 现货查询 批量订货

BASiC Semiconductor Launched Pcore™6 – Automotive 3-Phase Full-bridge SiC MOSFET Module for New Energy Vehicles

The automotive 3-phase Full-bridge SiC MOSFET Module Pcore™6 is designed and launched by BASiC Semiconductor based on the high-performance and high-efficiency requirements of power modules for core traction drivers from automobile manufacturers.

2023-04-13 -  新产品 代理服务 技术支持 现货查询 批量订货

ROHM 4th Gen SiC MOSFET Simulation Models for PSIM™ Now Available

ROHM has begun offering 4th Gen SiC MOSFET simulation models compatible with PSIM™, a circuit simulator designed for power electronics and motor drive developed by Altair®. Designers can now easily download model files to perform system-level evaluations, allowing for efficient design and evaluation across a wire range of industrial sectors, further promoting the use of power devices.

2024-08-02 -  产品 代理服务 技术支持 现货查询 批量订货
展开更多

电子商城

查看更多

品牌:ROHM

品类:Evaluation Board

价格:¥3,076.4596

现货: 1

品牌:ROHM

品类:Intelligent Power Module (IPM)

价格:

现货: 0

品牌:ROHM

品类:SiC MOSFET

价格:

现货: 0

品牌:ROHM

品类:SiC MOSFET

价格:

现货: 0

品牌:ROHM

品类:Intelligent Power Module

价格:

现货: 0

品牌:ROHM

品类:SiC MOSFET

价格:

现货: 0

品牌:ROHM

品类:SiC MOSFET

价格:

现货: 0

品牌:ROHM

品类:SiC MOSFET

价格:

现货: 0

品牌:ROHM

品类:Evaluation Board

价格:¥3,583.6606

现货: 0

品牌:ROHM

品类:SiC MOSFET

价格:

现货: 0

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

现货市场

查看更多

品牌:CREE

品类:晶体管

价格:¥13.5799

现货:27

品牌:CREE

品类:Six Channel SiC MOSFET Driver

价格:¥2,765.7315

现货:3

品牌:CREE

品类:晶体管

价格:¥25.2282

现货:2

品牌:ROHM

品类:Transistor

价格:¥0.8750

现货:1,256,978

品牌:ROHM

品类:Anti-surge chip resistors

价格:¥0.1098

现货:460,550

品牌:ROHM

品类:General purpose chip resistors

价格:¥0.0066

现货:426,165

品牌:ROHM

品类:Transistor

价格:¥0.1295

现货:270,000

品牌:ROHM

品类:transistor

价格:¥0.1543

现货:250,000

品牌:ROHM

品类:Low-side switch

价格:¥5.8200

现货:200,000

品牌:ROHM

品类:Transistor

价格:¥0.7632

现货:200,000

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

服务

查看更多

2G/3G/4G射频测试

支持GSM / GPRS 等多种制式产品的射频测试,覆盖所有上行和下行的各项射频指标,包括频差、相差、调制、功率、功控、包络、邻道泄漏比、频谱、杂散、灵敏度、同道干扰、邻道干扰、互调、阻塞等等。满足CE / FCC / IC / TELEC等主流认证的射频测试需求。

实验室地址: 深圳 提交需求>

功率MOSFET管检测:动静态参数/热特性/高低温性能/可靠性等参数测试

可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。

实验室地址: 西安 提交需求>

查看更多

授权代理品牌:接插件及结构件

查看更多

授权代理品牌:部件、组件及配件

查看更多

授权代理品牌:电源及模块

查看更多

授权代理品牌:电子材料

查看更多

授权代理品牌:仪器仪表及测试配组件

查看更多

授权代理品牌:电工工具及材料

查看更多

授权代理品牌:机械电子元件

查看更多

授权代理品牌:加工与定制

世强和原厂的技术专家将在一个工作日内解答,帮助您快速完成研发及采购。
我要提问

954668/400-830-1766(工作日 9:00-18:00)

service@sekorm.com

研发客服
商务客服
服务热线

联系我们

954668/400-830-1766(工作日 9:00-18:00)

service@sekorm.com

投诉与建议

E-mail:claim@sekorm.com

商务合作

E-mail:contact@sekorm.com

收藏
收藏当前页面