EPC Expands High-Performance eGaN FET Product Family with Latest 80 V and 200 V Offerings

时间： 2021-07-23 来源：EPC

技术问答

EL SEGUNDO, Calif.— June 2021 — EPC, the world's leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs, and ICs, advances the performance capability while lowering the cost for off-the-shelf gallium nitride transistors with the introduction of EPC2065 and EPC2054.

These new generation eGaN^® FETs address the new needs of the eMobility, delivery and logistic robot, and drone markets for compact BLDC motor drives and cost-effective high-resolution Time of Flight.

The EPC2065 is an 80 V, 3.6 mΩ, 221 A_pulsed eGaN FET in a 7.1 mm2 chip-scale package. The small size and superior efficiency reduce overall power system size and weight and make it ideal for 32V-48V BLDC motor drive applications for eMobility ebike and escooters, service, delivery, logistic robots, and drones. In these applications the driver is integrated with the motor and miniaturization is a key factor. The ability to operate with significantly shorter dead times results in less noise and less EMI. The device is capable of high-frequency operation to achieve the highest density for high-frequency DC-DC converters for computing and industrial applications and for synchronous rectification.

The EPC2054 is a 200 V, 3.6 mΩ, eGaN FET in a tiny 1.69 mm2 chip-scale package. The device can deliver 32 A pulsed current is an extremely small size, with very fast on-off transition times and super small capacitance and inductances, that make it ideal for industrial Lidar/ToF applications. The low resistance, low switching losses, no reverse recovery charge, fast switching, high-frequency capability, and tiny footprint make the EPC2054 a cost-effective and high-density solution for a wide range of applications including, but not limited to, high-frequency DC-DC, synchronous rectification, wireless power, class-D audio, Automation, Solar and Optical.

Alex Lidow, EPC's co-founder and CEO commented, “With the clear superiority of these new eGaN FETs, power system designers can take advantage of devices that are higher performing, smaller, more thermally efficient, and at a comparable cost. The displacement of the power MOSFET with GaN devices continues to accelerate.”

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