【产品】采用SOT-223封装的N沟道增强型MOSFET FDT86244，结至环境的热阻为55℃/W

时间： 2022-09-11 来源：科信

技术问答

科信（KEXIN）推出一款采用SOT-223封装的N沟道增强型MOSFET FDT86244。Ta=25℃条件下，漏源电压为150V，栅源电压为±20V，连续漏极电流为2.8A（注1），耗散功率为2.2W（注1）。

产品尺寸图和示意图

产品特点：

●漏源电压V_{DS (V)}=150V

●连续漏极电流I_D=2.8 A(V_GS =10V)

●漏源导通电阻R_DS(ON)＜285mΩ (V_GS =10V)

●漏源导通电阻R_DS(ON)＜305mΩ (V_GS =6V)

绝对最大额定参数（Ta=25℃）：

注1：安装在 2 oz 铜、1 in² 的焊盘上时为 55°C/W

注2：安装在 2 oz铜、最小焊盘上时为 118°C/W

注3：起始T_J= 25 °C；N沟道: L = 1 mH, I_AS = 5 A, V_DD = 135 V, V_GS = 10 V

电气特性（Ta=25℃）：

注1：脉冲测试：脉冲宽度≤ 300us，占空比≤ 2%

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选型指南 - 科信 - 2022/10/11 PDF 中文下载