【经验】选择性价比高、寿命长、可靠性强、稳定性高、契合度高的MOSFET时需要考虑的5大参数因素
在电路设计中，选择性价比高、寿命长、可靠性强、稳定性高、契合度高的MOSFET是至关重要的。为确保选择的MOSFET符合这些标准，我们建议考虑以下几个因素和参数：
1、额定电压（VDS）
选择MOSFET时，需要考虑其最大耐受电压。确保所选MOSFET的最大额定电压大于电路中出现的最高电压。如果所选MOSFET的最大额定电压小于电路中出现的最高电压，则可能会导致电路失效或烧坏MOSFET。
2、最大漏极电流（ID）
最大漏极电流是指MOSFET在额定电压下能够承受的最大电流。需要确保所选MOSFET的最大漏极电流大于电路中出现的最大电流。如果所选MOSFET的最大漏极电流小于电路中出现的最大电流，则可能会导致MOSFET过热或损坏，从而影响电路的正常工作。
3、静态电阻（RDS(on)）
静态电阻是指MOSFET在导通状态下的电阻。静态电阻越小，MOSFET的导通性能越好。因此，需要选择静态电阻较小的MOSFET，以确保电路中的能量损耗最小。
4、开关速度（td(on) / td(off)）
MOSFET的开关速度是指它从导通状态到截止状态的转换速度，通常以开关时间来表示。开关时间越短，MOSFET的开关速度越快，电路的稳定性越好。因此，需要选择开关速度较快的MOSFET，以确保电路的稳定性。
5、热阻（Rθcj）
热阻是指MOSFET从结节到外壳的温度梯度。热阻越小，MOSFET的热耗损越小，寿命越长。因此，需要选择热阻较小的MOSFET，以确保MOSFET的寿命。
综上所述，选择一个性价比高、寿命长、可靠性强、稳定性高、契合度高的MOSFET时，需要考虑以上几个因素和参数，并且需要确保导通电阻RDS(on)符合需求。只有在这些因素和参数都满足的情况下，才能选出最适合电路的MOSFET。为了确保电路的稳定性和可靠性，我们建议在选择MOSFET时，不要妥协任何一个因素或参数，而是要注重整体性能.
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本文由ll转载自华轩阳电子公众号，原文标题为:选择MOSFET建议考虑的因素，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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目录- MOSFET绝佳时机 企业简介及成长过程 产品介绍 产品封装介绍 MOSFET产品选型表 SiC/GaN功率器件产品选型介绍 MOSFET产品应用举例 增值服务
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If the application is low voltage and high frequency, requiring fast switching and small switching losses, MOSFETs can be chosen. If the application is high voltage and low frequency and requires a smaller conduction resistance and greater resistance to breakdown, IGBT can be chosen.
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MOSFET和IGBT在不同的应用场合有着各自的优缺点。如果应用场合是低压高频的，需要快速开关和较小的开关损耗，可以选择MOSFET；如果应用场合是高压低频的，需要较小的导通电阻和较大的抗击穿能力，可以选择IGBT。
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