【技术】探究碳化硅SiC MOSFET器件的UIS可靠性
本文中HI-SEMICON将与大家一起探讨碳化硅SiC MOSFET器件的UIS可靠性。
碳化硅(SiC)器件由于性能优越,特别适合在高功率、高温和高开关频率的应用环境下使用。近年来,SiC器件的发展取得了重大进展,尤其是在其可靠性方面,这使得SiC基器件已成为硅基功率器件的可行替代品。
然而,在一些极端工作环境下(过流、过温、短路和非钳位感性开关等),SiC器件依然存在可靠性问题,成为SiC器件全面取代Si基器件的阻碍。
例如,电动马达在启动时或者负载发生变化时会出现突然的大电流和电压脉冲,即使有良好的逆变器或电源设计,由于在电路中不可避免会出现寄生电感,也可能出现高压尖峰。
电压尖峰很容易超过最大击穿电压,导致短时间内出现雪崩击穿。这种应力可能会引发电参数漂移,从而使部件的工作范围和寿命受到限制。
将被测器件通过电感器和高速开关连接到电源。当开关短路,器件启动时,电流开始线性上升。当电流达到实验预定值时,关闭器件和开关。
电感中的磁场会生成一个反电动势,可以在器件上形成一个极高电压。如果没有添加保护电路,在电感器中积累的所有能量都会直接在器件中释放。
测量每个脉冲序列前后的器件特性,观察重复UIS应力的逐渐影响。在重复进行百万次脉冲的情况下,样品在承受应力前后的I-V曲线对比如图3及图4所示。
重复UIS脉冲引起阈值电压有轻微的漂移,同时导致了通态电阻的下降,这在输出特性中很明显。通态电阻的降低标明特性不受热循环的影响。
在UIS脉冲的雪崩阶段,大量的高能量载流子在阻塞PN结附近产生。阈值电压的漂移表明正电荷被困在通道-栅接口或其附近。这种正电荷的起源可以归因于UIS脉冲过程中产生的高能空穴,这是由栅极介电介质中电活性缺陷的形成或激活引起的。
漏极电流特性的变化是由电活性陷阱浓度的增加引起的,表现为漏极电流本身的增加和I-V曲线形状的变化,这很可能与电荷分布的变化而引起的电场分布的变化有关。
重复性雪崩应力对被测试器件的电性能产生了很大的的影响。经过反复的UIS应力测试,器件表现出一致的退化趋势,其特征是阈值电压降低,导通电阻降低,漏源和栅源泄漏电流显著增加。长期重复的UIS应力也显著增加了开通时间。
由此可知,SiC MOSFET除常规可靠性以外,还要根据SiC本身特性,制定专门的检测方案,才能有效对可靠性进行评估。
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本文由玉鹤甘茗转载自HI-SEMICON公众号,原文标题为:碳化硅SiC MOSFET器件 UIS可靠性,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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全球SiC器件供应商汇总
随着国家“双碳战略”的推进,新能源产业和电动汽车产业蓬勃发展,产生了对功率转换装置如太阳能逆变器,电动汽车充电桩,车载充电器和马达驱动器等的巨大需求,半导体功率器件是上述各种功率转换装置的核心。而碳化硅(SiC)材料具有耐高温和高压的特点,基于SiC的器件还具有高开关频率和低静态功耗,在高电压和大电流的领域,SiC都被认为是将取代硅成为功率器件的主流材料。
原厂动态 发布时间 : 2024-05-16
HI-SEMICON(深鸿盛)碳化硅肖特基二极管选型表
目录- 碳化硅肖特基二极管
型号- SC3D10065E,SC3D04065E,SC3D12065A,SC3D10065A,SC3D04065I,SC3D02065A,SC3D06065E,SC3D30065H,SC3D08065A,SC3D06065A,SC3D10065I,SC3D04065A,SC3D08065E,SC3D16065A,SC3D06065I,SC3D16065H,C3D02065I,SC3D20065D,SC3D50065H,SC3D20120D
HI-SEMICON 产品 DC-DC 电源分享
型号- SC3D40065D,SC3D40120D,SC3D40065I,SC3D40065H,SC3D15120H,SC3D40065G,SGP104R5T,SC3D10120H,SGP103R0T,SGM15HR11T,S3M015120K3,SFM6008T,S3M040120K3,S3M065120K3,SGD6008T,SGA104R5T,S3M032120K3,SC3D40065A,SFA10015T,SGP157R5T,SGP105R5T,SC3D30065I,SC3D30065G,SC3D30065H,SC3D30120H,S3M050120K3,SFP20007,SGD105R5T,SGP104R0T,SC3D30065D,SC3D30120D,SC3D30065A,SGP10HR10T,S3M075120K3,SC3D20065I,SC3D20065H,SC3D20120H,SFP4024T,TSFD6008T,SC3D20065A,SGP6008T,SGA105R5T,SGA104R0T,SC3D20065D,SC3D20065G,SC3D20120D
深鸿盛SiC肖特基二极管系列,多种规格可选
碳化硅的RDS(ON)较低,因而开关损耗也较低,通常比硅低100倍。基于碳化硅的肖特基二极管具有更高能效、更高功率密度、更小尺寸和更高的可靠性,可以在电力电子技术领域打破硅的极限,成为新能源及电力电子的首选器件。
产品 发布时间 : 2024-05-11
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提供全面表征产品器件耗电特征及功耗波形、快速瞬态效应、电源优化、表征和仿真测试服务,使用直流电源分析仪测量精度达50µV,8nA,波形发生器带宽100kHz,输出功率300W,示波器200kHz,512 kpts
实验室地址: 深圳/苏州 提交需求>
可定制射频隔离器/环行器(10M-40GHz),双工器/三工器(30MHz/850MHz-20GHz),滤波器(DC-20GHz),功分器,同轴负载,同轴衰减器等射频器件;可定制频率覆盖DC~110GHz,功率最高20KW。
最小起订量: 1 提交需求>
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