即思创意650V增强型SiC MOSFET，可实现比GaN更好的品质因数（FOM）

时间： 2021-07-01 来源：即思创意

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即思创意推出的增强型碳化硅场效应管（SiC MOSFET），其输出电荷（Qoss）几乎是新一代超结硅MOSFET的1/10，接近氮化镓场效应管（GaN FET）水平。其漏源导通电阻R_dson在100℃时仅比 25℃高10%，可实现比氮化镓（GaN）更好的 R_dson@100℃*Qoss 品质因数(FOM)。

即思创意的碳化硅场效应管（SiC MOSFET）的驱动方法与硅功率MOSFET的驱动方法类似，都是通过调整外部栅电阻 (Rg, ext) 就可以轻松且完全地控制 dV/dt。增强型SiC MOSFET 的芯片尺寸尽管小得多，但更高的雪崩能量 (EAS) 密度（接近 20J/cm2）使得其 EAS 等级接近新一代超结硅MOSFET。

特征

● 可提供工程样品

● 可靠且坚固：100% 雪崩测试，稳定的短路性能

● 额定值：V_DSS@25℃=650 V

● 封装类型：DPAK@MSL Level-1

● 使用方便：

电压驱动 (V_GS=10~18V)

低栅极泄漏电流 (Ig<1nA)

低电磁干扰

● 等级：工业和消费类产品

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本文由Lonely翻译自即思创意，版权归世强硬创平台所有，非经授权，任何媒体、网站或个人不得转载，授权转载时须注明“来源：世强硬创平台”。

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原厂动态发布时间 : 2023-07-26

650V Enhancement-mode SiC MOSFET Provides Qoss Almost 1/10 of Advanced Silicon Super-junction MOSFET

Our enhancement-mode SiC MOSFET provides Qoss almost 1/10 of advanced silicon super-junction MOSFET and close to GaN FET. The Rdson@100C is only 10% higher than Rdson@25C, enables better Rdson@100C*Qoss figure-of-merit (FOM) better than GaN. The driving method of our SiC MOSFET is similar to that of silicon power MOSFET and the dV/dt is easily and fully controllable by adjusting external gate resistance (Rg,ext). The much higher avalanche energy (EAS) density (close to 20J/cm2) enables the EAS rating similar to advanced silicon super-junction MOSFET despite with a much smaller chip size.

原厂动态发布时间 : 2021-06-07

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原厂动态发布时间 : 2022-01-07

SLKOR（萨科微）功率元器件和模块选型指南

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选型指南 - SLKOR - 2022/10/9 PDF 中文下载

纳芯微电子（NOVOSENSE）传感器、信号链/电源管理产品选型指南（中文）

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型号- NSI6602NA-DLAR,NCA1051,NSI6602VC-Q1SWR,NSI6622NB-Q1SWKR,NCA1051N-Q1SPR,NSM2017,NSI6602NC-Q1SWR,NSM2019,NSI6602A-Q1SWKR,NSM2013,NIRS485,NSIP83086,NSI6622VB-Q1SPOR,NSM2015,NSM2016,NSC9260X,NSD1624-Q1SPR,NSM2011,NSM2012,NSM 2115,NSI8231,NSI8230,NSM 2117,NSD2621C-DQAGR,NSR33XXX,NSM 2119,NSC9262,NSC9260,NSI6801LC-DDBR,NSI6602VD-Q1SWKR,NSC9264,NSP1830,NSG65N15K-DQAFR,NST112X,NCA1042C-Q1DNR,NCA1042,NCA1042A-Q1DNHR,NSI8220NX,NSI6622A-DSWKR,NSI6801TB-DDBR,NSD1624-DSPKR,NSP1833,NST7719,NSP1831,NSP1832,NSM1052,NSM1053,NSI8222,NSA2860X,NSI8100,NSI8221,NSI8220,NSI6642C-DSPNR,NSM1051,NSI822XC,NSIP8921W1-DSWR,NSI6602MNF-Q1SWTR,NSD11416-Q1STBR,NSI6602VB-Q1SPNR,NCA3491,NSI6642A-DLAR,NSI6602NB-Q1SWKR,NSA2860_TSSOP,NSD1026V,NSI8221CX-DSWR,NSE34050,NSD12416– Q1,NCA1043B-Q1DNKR,NCA1044N-Q1SPR,NSIP8944W1-DSWR,NSPGL1 系列,NSI6622A-Q1SPNR,NCA1051N-Q1,NSA2860X-DQNR,NSM2031,NSI6602MNB-Q1SWTR,NSD7310A-DHSPR,NSM2032,NCA1145-Q1SPKR,NSM2033,NSI8210,NSM2034,NSI6601MB-DSPR,NSD1015T,NSI8266CX-DSWR,NSI6602VD-DSWKR,NSI8222CX-DSPR,NSD1015MT-DSPR,NCA1021S-Q1SPR,NSI8262CX-DSWR,NSPGS2,NCA34XX,NCA1051A,NCA3485,NCA1051C,NSI68011C-DSWAR,NSI8221NX,NSI6602NC-DLAMR,NST1002,NSPGS5,NSI6602VC-DLAMR,NST1001,NCA1042C-Q1,NSI6602A-DLAR,NSI6602ND-DSWKR,NSM105X,NSD16241-Q1SPR,NSI1303M0X,NSM3011,NSI8240CX-DSPR,NSM3013,NSM3012,NSA2862X,NSA2860_SSOP16,NSI6642B-DSWKR,NSM1071,NSM1072,NSI823XC,NSD5604N,NSI6642A-DLAMR,NSI6642D-DLAR,NSI8100NC,NSI6602B-Q1SWR,NSD1026V-Q1SPR,NSI6622ND-DSPNR,NSI6601B-DSPR,NSA2860X-QQNR,NSI8210NX,NSI6642D-DSWKR,NSD5604E,NSI6602MF-DSWTR,NIRSP31,NSI6602MNB-DSWTR,NST175,NST1075,NSI6602A-DSPNR,NSI68010B-Q1SWAR,NSI1312D,NSI6642B-DSWR,NSI8222NX,NSI6601C-DSPR,NSI6622NB-DLAR,NSIP8841W1-DSWR,NSA2862X-DQNR,NSP1631,NSI8221CX-DSWVR,NSP1632,NSE34140,NSP1630,NSD56008-Q1HTSPR,NSI6622C-DLAR,NSM301X,NSM107X,NSI824XC,NSI6602VA-Q1SPNR,NSI6602ND-DLAR,NSI6801C-DSWFR,NCA3176,NSI6801MB-DSWVR,NSD3608-Q1QAJR,NSI1312S,NSI6622VB-Q1SWR,NSI6622B-Q1SPNR,NSD5604N-DHTSPR,NSD1624-DLAJR,NSD3604,NSI68011C-Q1SWAR,NSI6602VA-DLAMR,NSI6602NA-DLAMR,NSI6602NB-DSWR,NSD5604E-DHTSTR,NSR35XXX,NSE34140 系列,NSI6622NB-Q1SWR,NSD5604N-Q1HTSPR,NSD1224X,NSI6602C-Q1SPNR,NSI8100W,NSI6622NA-DSPNR,NSIP8844W1-DSWR,NSI6622NB-DSWKR,NSE5702,NSE5701,NSI8100N,NSP183X,NCA1044-Q1DNR,NSI6622NC-DLAR,NCA1021S-Q1DNR,NSI6622VB-Q1SPNR,NCA1044N-Q1DNR,NSD16241-DSPKR,NSI3190,NSI6602VD-DSWR,NPC060N120A-QTOOT,NSI6622NA-Q1SWKR,NSE34050Q,NSE4253 系列,NSD1224LA-DAFR,NSI8241SX,NSI6622NA-Q1SWR,NSI6622NC-Q1SPNR,NSI8231CX-DSWR,NSI1052-DSWR,NSI6622VA-Q1SPOR,NSI6801B-DSWFR,NSP183X 系列,NSI6602B-Q1SPNR,NSI6601WC-DSWVR,NSI6651ASC-Q1SWR,NSC6272,NSI8263CX-DSWR,NSD8310-Q1HTSXR,NSC6273,NSREF31XX,NSI6622ND-DSWR,NSI6622NC-DSPNR,NSI1042C-DSWVR,NSI6602NB-DLAR,NSI6602NB-DSPNR,NSA5312,NSI6622VC-Q1SWKR,NSPGL1,NSI6602A-Q1SWR,NSI6622NC-Q1SPOR,NSI6642C-DLAMR,NSI6601MC-DSWVR,NSD56008-Q1,NSI8220WX,NSI8266WX,NSD5604NE,NSI6622VA-Q1SPNR,NSI6602VB-DSWKR,NCA1042BN-Q1SPR,NCA1057-Q1SPR,NCA1043B-Q1,NCA9511,NSI6602A-DSWR,NSC6280,NSI6602NA-Q1SWKR,NSI6602NC-DSWR,NSI6801TC-DDBR,NSI8242SX,NSI68515AC-DSWR,NST112,NSI6602B-DSWKR,NSI6602VD-DLAMR,NSI8220CX-DSWVR,NSI6622NB-DSWR,NST235,NST117,NSI6602VC-DSWKR,NSI6602VC-Q1SWKR,NSI6602MB-DSWDR,NST118,NSD16242-Q1SPR,NCA3085,NSI1050C-SWR,NCA1044-Q1SPR,NSI6651,NSI6601MB-DSWVR,NSI6642B-DLAMR,NSI6602C-DSWKR,NSI8240NX,NCA1057N-Q1DNR,NSP163X,NSI6602NC-DSPNR,NCA1042BN-Q1,NSI8221WX,NSI66X2,NSI6631ASC-Q1SWR,NSP163X 系列,NSI1050C,NSI6602MNC-DSWTR,NCA1042B-Q1DNR,NSI6642,NSI6601C-DSWVR,NIRS2X,NSI8266SX,NSI6602NB-Q1SPOR,NSI6602NC-Q1SPOR,NSG65N15K,NSI6622ND-DLAMR,NSD12409-Q1SPR,NCA1042CN-DSPR,NSI6602VA-DSWKR,NSI6642D-DLAMR,NCA1051N,NSI6642A-DSWKR,NIRS20N1-DSPR,NIRS21N1-DSPR,NSI6622NA-DLAR,NSC2860X-DQNR,NSI1042-DSWVR,NCA1042C-Q1SPR,NSI6602C-DSWR,NCA1057-Q1DNR,NSI8221CX-DSPR,NPD010N120A-DTOGT,NSI6602VB-Q1SWR,NSI8210CX-DSPR,NSI8241NX,NSI6602NC-Q1SPNR,NCA1042BN-Q1DNR,NST461,NSD2621X,NCA1042A-Q1,NSI8222WX,NST103,NSI1303D0X,NSI1303E2X,NSI6622A-Q1SWKR,NSI6602VC-DLAR,NSD16242-DSPR,NCA9555,NSI1052,NSC6360,NSC6362,NSI6622NB-DLAMR,NSI6651ALC-DSWR,NSC6364,NCA1042B,NSI6602NA-DSPNR,NSI6622A-DLAR,NSI6622C-Q1SPNR,NCA1042C,NSI8220CX-DSWR,NSI6622C-DSPNR,NSA3166,NCA1042A-Q1SPR,NSIP8941W0-DSWR,NSI6642B-DLAR,NCA1042B-Q1,NSPGD1M,NSE4254 系列,NSD1624-DSPR,NSI6602VA-Q1SWR,NSD1026V-Q1HMSR,NSI8242CX-DSWR,NSI6602MNC-Q1SWTR,NST20,NIRS31,NSREF30XX,NCA9545,NSI6622NA-DLAMR,NSI1042,NSI6611,NCA9546,NSI6622B-DSPNR,NCA9306,NCA9548,NSD12416-Q1SPR,NSI6602MC-Q1SWTR,NSI8242NX,NSD8381-Q1QAIR,NSD8308-Q1HTSXR,NCA9617A,NST1001HA,NSI6602VA-DSWR,NSI1303D2X,NSI6601B-DSWVR,NSD7310-DHSPR,NSI6601,NSD731X-Q1,NCA1057N-Q1SPR,NSR7808GXX,NSD7312-Q1HSPR,NSI6602VB-DLAMR,NSI6602MNF-DSWTR,NSD1026V-DHMSR,NSA3300,NSI6602C-Q1SWKR,NSC2860X,NSI6622NB-Q1SPNR,NCA1051N-DSPR,NSI6611ASC-DSWR,NSI22C11,NSI8230CX-DSWR,NSI6801B-DSPR,NSI6622A-DSPNR,NSD5604NE-DHTSTR,NSI6601MB-Q1SWVR,NST86,NCA1042B/ A-Q1,NIRS31-DSSR,NSI6642C-DSWKR,NSE4250 系列,NSA2200,NSI8262WX,NSI6602NB-DLAMR,NSE11409,NSI8260SX,NSPGD1,NCA1042B-Q1SPR,NSI6602VD-Q1SPNR,NSI6622NC-DLAMR,NSD8306,NSD3608-Q1,NSD731X,NSD8308,NIRSP31V,NSI6602VB-DLAR,NSD73

选型指南 - 纳芯微电子 - 2024年4月 PDF 中文下载

即思创意（fastSiC）碳化硅MOSFET和肖特基二极管选型指南

目录- SiC Schottky Diode&SiC MOSFET

型号- FL12190A,FF06100G,FC06008D,FF06100F,FC06006A,FC06008C,FC06008B,FF06100D,FC06008A,FF06320B,FF06320A,FF06030Q,FF17900E,FH06010C,FH06020E-3,FL06320B,FH06020E-2,FL06320A,FC06006D,FC06016C,FC06006C,FF17900Q,FC06010C,FH06004C,FH06006C,FC06002X,FL06150A,FL06320G,FF061K4A,FF12040Q

选型指南 - 即思创意 - 2022/1/18 PDF 英文下载

【产品】雪崩耐受性强的碳化硅MOSFET FF06030系列，具有更高的系统效率，允许使用高温应用

即思创意推出的碳化硅MOSFET–Falcon Series FF06030具有快速切换行为的优化RDS(on)，能够与标准栅极驱动器兼容，雪崩耐受性强。其具有更高的系统效率，允许使用高温应用并进行高频操作，可靠性高，符合RoHS标准且无卤素。

产品发布时间 : 2022-08-30

【元件】爱仕特新推SiC MOSFET MT7系列，采用TO263-7L封装，导通速度更快且损耗更小

爱仕特推出新款SiC MOSFET MT7产品，采用具有驱动器源极引脚的低电感表贴封装，具有显著的性能优势，使自身SiC MOSFET产品阵容更加丰富。目前爱仕特MT7已进入量产，可应用于电动汽车、消费类电源等领域。

新产品发布时间 : 2023-06-26

Achieve Zero Switching Loss with SiC MOSFET

A technical report published in IEEE Transactions on Power Electronics, demonstrated that the switching loss of SiC MOSFET can be completely eliminated under some control strategies.The study was conducted by Prof. Alex Q. Huang’s group at University of Texas at Austin and Prof. Bo Zhang’s group at University of Electronic Science and Technology of China.

设计经验发布时间 : 2021-10-16

What is SiC and why is SiC for power devices?

In SiC, because of its 10 times strength to withstand electric field, its theoretical specific on-resistance can be 200 times smaller than Si counterpart, which enables people to use SiC to manufacture high voltage devices with simple structures. Today, unipolar SiC power devices, including SiC MOSFETs and SiC Schottky rectifiers, have been commercialized for voltage rating up to 3300V, which is unreachable by any other semiconductor materials.

原厂动态发布时间 : 2021-09-28

SiC MOSFET Clamped Inductive Load Switching Evaluation Kit

型号- FF06190A,FSSEVB_GDRV,FSSEVB_CILS

应用笔记或设计指南 - 即思创意 - Rev. A - May 2021 PDF 英文下载

SiC can Be Extremely Fast

People would think of GaN (gallium nitride) when talking about high frequency or very high frequency switching. However, a study published by scientists from Stanford University showed that SiC can also be extremely fast.The scientists demonstrated that DC-RF efficiency higher than 86% can be realized with a 17MHz class E inverter using SiC MOSFET.

设计经验发布时间 : 2021-10-15

使用SiC MOSFET实现零开关损耗，开关损耗不再是开关频率限制因素

一篇在IEEE学报上发表的电力电子技术报告表明，SiC MOSFET的开关损耗在某种控制策略下可以完全消除。利用零电压开关（ZVS）开通时恢复存储在输出电容中的能量（Eoss），并使用更强的栅级驱动和减少寄生电容，来实现零关断损耗（ZTL），这便做到了零开关损耗（ZSL）。

原厂动态发布时间 : 2021-06-21

【产品】性能接近GaN FET的650V SiC MOSFET Falcon系列，调节外部栅极电阻可完全控制dV/dt

即思创意（Fastsic）增强型SiC MOSFET提供的Qoss几乎是性能优异的硅超结MOSFET的1/10，接近GaN FET。导通电阻 @ 100℃时仅比导通电阻 @ 25℃高10％，使其在导通电阻@ 100℃时的 Qoss品质因数（FOM）比GaN更好。

新产品发布时间 : 2021-05-28

SiC is quickly taking the market share originally occupied by Si IGBT in electric vehicles

With SiC inverters, it is possible to extend the range of EVs by 6~10% with the same size of battery pack, or maintain the same range with a smaller battery because of its high efficiency and high frequency operation capability. It can be sure that SiC will continue to replace Si in EVs, not just in main inverters, but also on-board chargers (OBC) and DC/DC converters, probably faster than anticipated.

行业资讯发布时间 : 2021-10-14