即思创意650V增强型SiC MOSFET，可实现比GaN更好的品质因数（FOM）

时间： 2021-07-01 来源：即思创意

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即思创意推出的增强型碳化硅场效应管（SiC MOSFET），其输出电荷（Qoss）几乎是新一代超结硅MOSFET的1/10，接近氮化镓场效应管（GaN FET）水平。其漏源导通电阻R_dson在100℃时仅比 25℃高10%，可实现比氮化镓（GaN）更好的 R_dson@100℃*Qoss 品质因数(FOM)。

即思创意的碳化硅场效应管（SiC MOSFET）的驱动方法与硅功率MOSFET的驱动方法类似，都是通过调整外部栅电阻 (Rg, ext) 就可以轻松且完全地控制 dV/dt。增强型SiC MOSFET 的芯片尺寸尽管小得多，但更高的雪崩能量 (EAS) 密度（接近 20J/cm2）使得其 EAS 等级接近新一代超结硅MOSFET。

特征

● 可提供工程样品

● 可靠且坚固：100% 雪崩测试，稳定的短路性能

● 额定值：V_DSS@25℃=650 V

● 封装类型：DPAK@MSL Level-1

● 使用方便：

电压驱动 (V_GS=10~18V)

低栅极泄漏电流 (Ig<1nA)

低电磁干扰

● 等级：工业和消费类产品

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SLKOR（萨科微）功率元器件和模块选型指南

目录- 公司介绍碳化硅场效应管/碳化硅肖基特二极管/场效应管超结场效应管/IGBT单管/可控硅二极管静电保护器件/瞬态抑制二极管三极管/电源IC 运算放大器/达林顿晶体管阵列/整流桥/霍尔传感器光耦/石英晶体谐振器

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