【产品】高速512/256/128kx18位同步双端口静态RAM 70T3339/19/99S
70T3339S、70T3319S、70T3399S是 IDT(RENESAS收购)推出高速512/256/128kx18位同步双端口静态RAM。 存储器阵列利用双端口存储器单元允许同时访问来自两个端口的任何地址。控制,数据和地址输入寄存器提供最少的设置和保持时间。 通过这种方法提供的时序范围允许系统设计具有非常短的循环时间。 通过输入数据寄存器,IDT70T3339/19/99S已针对具有突发中的单向或双向数据流的应用进行了优化。
由CE0和CE1控制的自动断电功能允许每个端口的片上电路进入非常低的待机功耗模式。IDT70T3339/19/99S可以支持3.3V或2.5V的工作电压 或两个端口,可由OPT引脚控制。 器件内核(VDD)的电源电压为2.5V。
图1 功能框图
双端口静态RAM主要特性:
•真双端口存储单元,允许同时读取相同的存储单元
•高速访问
-商业:3.4ns(200MHz)/3.6ns(166MHz)/4.2ns(133MHz)(最大值)
-工业:4.2ns(133MHz)(最大值)
•可选择流水线或流通输出模式
•计数器启用和重复功能
•双芯片可实现深度扩展,无需额外的逻辑
•中断和碰撞检测标志
•两个端口上的完全同步操作
-5ns周期时间,200MHz工作频率(14Gbps带宽)
-快速3.4ns时钟数据输出
-数据输入,地址,字节使能和控制寄存器
-在200MHz时,所有控制,数据和地址输入均设置为1.5ns,时钟为0.5ns
-自定时写入允许快速循环时间
•单独的字节控制,用于多路复用总线和总线匹配兼容性
•双循环取消选择(DCD)用于流水线输出模式
•核心2.5V(±100mV)电源
•LVTTL兼容,可选择3.3V(±150mV)或2.5V(±100mV)电源,用于每个端口上的I / O和控制信号
•工业温度范围(-40°C至+ 85°C),133MHz
•提供256针球栅阵列(BGA)和208针细间距球栅阵列(fpBGA)
•支持符合IEEE 1149.1的JTAG功能
•绿色部件可用,请参阅订购信息
图2 订购信息图
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