JieJie Microelectronics Launched Its Start-of-the-art PowerJE® 10x12 Package and Domestically Leading SGT MOSFET

In this feature article, JieJie Microelectronics announces that its independently developed high-power think package PowerJE^® 10x12 has been on large-scale mass production. This package conforms to JEDEC standard MO-299B and is compatible with like TO-LeadLess packages of well-known international manufacturers; moreover, it has passed the stringent 1,000-temperature cycle reliability test (-55℃~150℃). Compared with the traditional TO-263-3L package, it has a 20% less footprint and 45% less height. While significantly reducing the footprint, it effectively improves the power density, thus suiting extremely compact terminal designs. Excellent thermal resistance contributes to better heat dissipation, which future guarantees the long-term reliability of devices.

In response to the increasing customer demand for performance and BOM (bill of material) space, JieJie Microelectronics launched the N-channel JSFET^® series of JMSH1001ATL (V_{DS_Max}=100V) and JMSH1504ATL (V_{DS_Max}=150V) incorporating independent intellectual property rights; both are designed with advanced PowerJE^® 10x12 package. When V_GS＝10V, the measurements of R_{DS(ON)_Typ} and FOM of the device are 1.3mΩ/202 (JMSH1001ATL) and 3.3mΩ/290 (JMSH1504ATL), respectively. When it comes to electrical properties, JMSH1001ATL SGT MOSFET outperforms the competition in China and is not very different from similar products in Europe, the United States, and Japan. Furthermore, the top-ranking linear model/safe operation area (SOA) feature enables devices to function in a safe and reliable manner even in the operating state of high current. The extremely low on-resistance helps improve operational efficiency, reduce system cost, and extend the service life of devices. Both products have extensive applications in power tools, light-duty electric vehicles, photovoltaic energy storage inverters, 5G communication and PoE++, and other terminals.

Fan Jun, Marketing Director of Power Discrete Devices, JieJie Microelectronics: "Powered by the chips designed by the R&D team of JieJie Microelectronics, manufactured by IATF 16949-certified fabs, and subjected to PowerJE^® 10x12 assembly test on JieJie Microelectronics' car-grade advanced package production lines, JMSH1001ATL's electrical properties are comparable to that of products of international first-line semiconductor IDM manufacturers, having contributed to the high-end breakthrough in the localization of like products. Featuring excellent thermal conductivity and low package parasitic inductance effect, this device is designed to handle up to 375A of current, thus being ideal for applications with stringent requirements for BOM (bill of material) space, electrical performance, and long-term device reliability."

Both products are in mass production.