Alliance Memory Announced Dual-Die 8Gb DDR3L SDRAMs AS4C1G8D3LA and AS4C512M16D3LA in 78-Ball and 96-Ball FBGA Packages
SAN CARLOS, Calif. —April 25, 2019 — ALLIANCE Memory introduced dual-die 8Gb DDR3L SDRAMs that are pin-for-pin drop-in replacements for and fully compatible with end-of-life, single-die 8Gb DDR3Ls.
“In keeping with our commitment to supporting our customers’ legacy SDRAM needs, we’re excited to now announce the immediate availability of dual-die-package 8Gb DDR3L SDRAMs for long-term support and new designs.”Said David Bagby, president, and CEO of Alliance Memory.
Featuring a DDR architecture, the AS4C1G8D3LA, and AS4C512M16D3LA provide speed of 10ns, extremely fast data rates of 1866Mbps, and clock rates of 933MHz. Operating from a single +1.35V power supply, with backward compatibility to 1.5V, the SDRAMs are optimized for main memory applications in laptops, desktops, servers, embedded designs, and industrial designs. The devices are available in commercial (0℃ to +95℃), industrial (-40℃ to +95℃), and automotive (-40℃ to +105℃) temperature ranges.
The AS4C1G8D3LA and AS4C512M16D3LA support sequential and interleave burst types with read or write burst lengths of 4 or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. RoHS-compliant, the devices are lead (Pb)- and halogen-free.
Samples and production quantities of the dual-die AS4C1G8D3LA and AS4C512M16D3LA are available now.
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本文由涂抹转载自ALLIANCE News，原文标题为:Alliance Memory Announces New Dual-Die 8Gb DDR3L SDRAMs in 78-Ball and 96-Ball FBGA Packages; Devices Provide Drop-in Replacement for Micron EOL Single-Die 8Gb DDR3L SDRAMs，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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ALLIANCE 存储器选型表
提供存储器、存储芯片、SRAM、SDRAM、DDR1、DDR2、DDR3、DDR4选型，VCC(V)：0.6-5，MSL LEVEL：0-5，CLOCK(MHz)：133-1866，可支持商业级/工业级/汽车级。
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品类
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MSL LEVEL
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VCC(V)
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PACKAGE
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AS7C164A-15JCN
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存储器
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64K Fast
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3
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5V
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28pin SOJ(300mil)
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Commercial (0 ~ 70°C)
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8K x 8
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选型表 - ALLIANCE 立即选型
Reliability Qualification Report for AS4C1G8MD3LA-xxBxN AS4C512M16D3LA-xxBxN(25nm 8Gb DDR3L SDRAM)
型号- AS4C1G8MD3LA-XXBXN,AS4C1G8D3LA-XXBIN,AS4C512M16D3LA-XXBCN,AS4C512M16D3LA-XXBXN,AS4C1G8D3LA-XXBCN,AS4C512M16D3LA-XXBIN
Worldwide Leader in Legacy Memory PRODUCT CATALOG 2024
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SIN,AS4C64M16D,AS4C16M16SB-6TXN,AS6C62256-55STXN,AS4C8M16SB-6TIN,AS7C34096A-XXJXN,AS4C256M16D4A-62BXN,AS4C256M16D3C,AS7C316098 B,AS6C8008-55ZIN,6416,AS6C2008,AS6C4008-55STIN,AS4C32M16D1A,AS6C2008-55TIN,AS4C16M16MSB-6BIN,AS4C16M16MSA,AS4C4M32S,AS4C64M8D2,M29F800FB5AN6F2,AS4C64M8D1,AS7C316096B-10BIN,34096A,AS4C8M16SA-7BXN,AS7C31026B-XXJCN,AS7C31025B-XXJCN,AS4C32M8SA-6TXN,AS4C32M16D2A,AS7C32098A,AS4C32M16D2C,4008,AS4C64M32MD1-5BXN,AS4C8M16D1A,AS7C38096A-10BIN,AS4C1G16D4-062BCN,AS4C1G8D4A-62BXN,AS6C1616B-55TIN,AS4C64M32MD1,AS7C256C-XXPCN,AS6C6264-55 PIN,AS6C2008-55STIN,AS4C6,AS4C4M32S-7BXN,AS4C4M32D1A-5BXN,AS4C128M16D2-25BXN,AS6C8016B-45ZIN,AS4C16M16SB-7BXN,4016,AS4C8M32SA,AS4C4M32SA-6TXN,AS4C16M16SA -7TXN,AS25F316MQ-10S1IN,AS7C32096A,AS6C1008-55PIN,AS4C16M16SB-7TXN,AS4C16M16SA 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型号- AS4C1G8D3LA-10BCNTR,AS4C1G8D3LA-10BANTR,AS4C1G8D3LA-10BINTR,AS4C1G8D3LA-10BAN,AS4C1G8MD3L-12BCN,AS4C1G8D3LA-10BCN,AS4C1G8MD3L-12BCNTR,AS4C1G8D3LA-10BIN
【产品】8Gbit双倍数据速率DDR3L同步DRAM（SDRAM）AS4C1G8D3LA，78-ball FPGA封装
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型号- AS4C8M16SA-7TXN,AS6C2008A,AS6C62256-55SXN,ASFC64G31T5-51BIN,AS4C8M32MD2A-25BPCN,AS4C64M32MD2A-25BIN,AS5F18G04SND-10LIN,AS1C512K16P-70BIN,AS4C8M32MSB-6BIN,AS7C38096B-10BIN,ASFC32G31T3-51BIN,AS29CF160B-55TIN,AS4C16M16SA-6TXN,AS7C31025C-12JIN,AS7C31024B-XXTCN,M29F160FT55N3E2,AS4C64M16MD2A-25BIN,AS4C32M16MSB-6BIN,M29F800FT55N3E2,AS25F1128MQ-70WIN,AS7C1024B-XXJCN,AS5F34G04SNDB-08LIN,AS29CF800T-55TIN,AS4C8M16SA-6BXN,AS4C4M16SA-6TXN,AS9F38G08SA-25BIN,N25Q064A13ESFA0F,AS25F364MQ-10WIN,AS9F31G08SA-25BIN,AS4C32M8D1-5TXN,AS4C64M4SA-6 TXN,AS4C256M16D4-83BXN,AS7C31025B-XXJIN,AS4C8M16SA-6 TXN,AS1C1M16P-70BIN,AS4C8M16SA-7 BXN,AS25F34MD-10S1IN,AS6C6416-55TIN,AS4C128M8D2A-25BXN,AS6C2008A-55TIN,AS4C2M32S-7BXN,AS4C512M16D3LC-12BXN,AS4C2M32SA-7 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Alliance Memory’s Featured Products at Electronica 2022: eMMCs/DDR4 SDRAMs/1.8V Serial NOR Flash/DDR3 SDRAMs
Compliant with the JEDEC eMMC v5.1 industry standard, Alliance Memory’s eMMC solutions integrate NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single package for solid-state storage in consumer, industrial, and networking applications.
厂牌及品类 发布时间 : 2022-10-30
Alliance全新4Gb高速CMOS DDR4 SDRAMs、5V并行NOR闪存在“嵌入式世界2020”大会上展示
Alliance Memory在2月25日~27日于德国纽伦堡举行的“嵌入式世界2020”大会上展示用于传统和新设计的SRAMs、DRAMs和闪存芯片。此外Micron（镁光）MT41K512M16HA-125 IT：8G DDR3L SDRAM的用户（最近一次购买日期为2019年1月13日）现在可以从Alliance Memory购买相同的设备，零件编号为AS4C512M16D3L-12BIN
行业资讯 发布时间 : 2020-03-16
Alliance Memory Highlighted Latest SRAM, DRAM, eMMC, and Flash Memory ICs at Electronica 2022
Alliance Memory announced its technology lineup for electronica 2022, in Munich, Germany. Exhibiting in Hall C3, Stand 328, the company highlighted its latest SRAM, DRAM, eMMC, and flash memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets.
厂牌及品类 发布时间 : 2022-12-01
Alliance Memory Introduced Die Version for 2Gb and 4Gb DDR3 and DDR3L SDRAMs Providing New Memory Chip Source in Face of Market Shortages
To address the memory market’s shortage of high-speed CMOS DDR3 and low-voltage DDR3L SDRAMs, Alliance Memory announced a new die revision (B die) for its 2Gb and 4Gb devices in the 96-ball FBGA package.
产品 发布时间 : 2023-11-01
Micron M29F 5V NOR Flash with AEC-Q100-certified and 55ns Access Time Available Direct From Alliance Memory
Alliance Memory announces that the company is now the authorized source for genuine M29F (AM29F, MX29F) 5V parallel NOR Flash devices from Micron Technology, Inc., which Micron discontinued Micron PCN ＃32160 (last time buy: March 2018).
产品 发布时间 : 2023-08-20
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