Rad Hard GaN Transistors Offering Highest Density and Efficiency on the Market for Demanding Space Applications Available from EPC
EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high-reliability environments with the addition of a fifth rad-hard device to the product family.
EL SEGUNDO, Calif.— June 2022 — EPC announces the introduction of the EPC7004 radiation-hardened GaN FET. The EPC7004 is a 100 V, 7 mΩ, 160 APulsed, rad-hard GaN FET in a small 6.56 mm2 footprint. The EPC7004 has a total dose radiation rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). The EPC7004, along with the rest of the Rad Hard family, EPC7014, EPC7007, EPC7019, and EPC7018, are offered in a chip-scale package, the same as the commercial eGaN® FET and IC family. Packaged versions will be available from EPC Space.
With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and very low on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. GaN devices also support higher total radiation levels and SEE LET levels than silicon solutions.
The EPC7004 joins a family of rad-hard products that range from 40 V to 200 V offering significant electrical and radiation performance benefits for applications including DC-DC power, motor drives, lidar, deep probes, and ion thrusters for space applications, satellites, and avionics.
“The 100 V EPC7018 and EPC7004 offer designers different size/power tradeoffs with ultra-low on-resistance enabling a new generation of power conversion and motor drives in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before”, said Alex Lidow, CEO, and co-founder of EPC.
Availability
The EPC7004 is available for engineering sampling and will be fully qualified for volume shipments in December 2022.
About EPC
EPC is the leader in enhancement mode gallium nitride (eGaN®) based power management. eGaN FETs and integrated circuits provide performance many times greater than the best silicon power MOSFETs in applications such as DC-DC converters, remote sensing technology (lidar), motor drives for eMobility, robotics, drones, and low-cost satellites.
- |
- +1 赞 0
- 收藏
- 评论 0
本文由叫我大表哥吧转载自EPC,原文标题为:Rad Hard GaN Transistors Offering Highest Density and Efficiency on the Market for Demanding Space Applications Available from EPC,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
相关推荐
【IC】EPC新推基于GaN FET的150A电机驱动器EPC9186,适用于电动出行、叉车和大功率无人机
EPC新推EPC9186,这是一款采用EPC2302 eGaN®FET的三相BLDC电机驱动逆变器。EPC9186支持14V~80V的宽输入直流电压。大功率EPC9186支持电动滑板车、小型电动汽车、农业机械、叉车和大功率无人机等应用。
新产品 发布时间 : 2023-05-10
【元件】EPC新推80V车规级GaN FET EPC2252,脉冲电流75A,实现更高分辨率激光雷达
EPC推出80V、通过AEC-Q101认证的氮化镓场效应晶体管(GaN FET)EPC2252,为设计人员提供比硅MOSFET更小和更高效的解决方案,用于车规级激光雷达、48V/12V DC/DC转换和低电感电机驱动器。
新产品 发布时间 : 2023-02-01
【元件】EPC新推出80V GaN FET EPC2619,导通电阻仅4mΩ,专为电机驱动应用设计
2022年11月15日,EPC宣布推出80V、4mOhm的GaN FET EPC2619。在新生代的eGaN器件领域内,这是一款领先产品,其功率密度是EPC上一代产品的两倍。EPC2619的RDS(on)仅为4mOhms,尺寸仅有1.5mmx2.5mm。
新产品 发布时间 : 2022-11-29
【应用】国产GaN驱动器SGM48520助力激光雷达设计,传播延迟低至2.5ns
激光雷达(LiDAR)属于一种遥感技术,工作原理是通过GaN的高频开关来激发激光二极管实现测距,而驱动GaN FET则需要专门的驱动器,本文介绍国产圣邦微(SGMICRO)的GaN驱动器SGM48520助力激光雷达发射链路中GaN的驱动设计。
应用方案 发布时间 : 2022-03-04
EPC(宜普)eGaN® 氮化镓晶体管(GaN FET)和集成电路及开发板/演示板/评估套件选型指南
目录- eGaN FETs and ICs eGaN® Integrated Circuits Half-Bridge Development Boards DrGaN DC-DC Conversion Lidar/Motor Drive AC/DC Conversion
型号- EPC2212,EPC2214,EPC2059,EPC2216,EPC2215,EPC2218,EPC2016C,EPC2050,EPC2052,EPC2051,EPC2054,EPC2053,EPC2055,EPC9086,EPC2218A,EPC90153,EPC9087,EPC90154,EPC2069,EPC2102,EPC2101,EPC2104,EPC2103,EPC2106,EPC2105,EPC2107,EPC9018,EPC2065,EPC90151,EPC90152,EPC21702,EPC2100,EPC2067,EPC2221,EPC21701,EPC2066,EPC90150,EPC9097,EPC90145,EPC90142,EPC9098,EPC90143,EPC9099,EPC9092,EPC90148,EPC90149,EPC90146,EPC9094,EPC90147,EPC2219,EPC9091,EPC2619,EPC2036,EPC2035,EPC2038,EPC2037,EPC2014C,EPC2039,EPC9507,EPC2030,EPC9067,EPC2032,EPC2031,EPC9068,EPC2152,EPC2033,EPC9063,EPC9186,EPC9066,EPC8010,EPC9180,EPC2204A,EPC9181,EPC9061,EPC2308,EPC2307,EPC9005C,UP1966E,EPC2203,EPC9004C,EPC2202,EPC2204,EPC2015C,EPC2207,EPC2206,EPC2040,EPC2045,EPC2044,EPC9194,EPC2012C,EPC2019,EPC9049,EPC9203,EPC9204,EPC9205,EPC2252,EPC9166,EPC9167,EPC9047,EPC9201,EPC9041,EPC9162,EPC9163,EPC9165,EPC7020,EPC9160,EPC9040,EPC2024,EPC8009,EPC2302,EPC2001C,EPC2029,EPC2304,EPC2306,EPC2305,EPC8002,EPC2021,EPC9177,EPC2020,EPC9057,EPC9167HC,EPC2023,EPC9179,EPC9058,EPC8004,EPC2022,EPC9059,EPC9173,EPC9174,EPC9055,EPC9176,EPC9170,EPC9050,EPC9171,EPC9172,EPC2010C,EPC2034C,EPC7007,EPC7002,EPC9148,EPC2071,EPC7001,EPC23101,EPC23102,EPC23103,EPC9144,EPC90140,EPC23104,EPC2111,EPC7004,EPC2110,EPC7003,EPC90133,EPC90132,EPC9022,EPC9143,EPC90137,EPC90138,EPC90135,EPC90139,EPC7019,EPC7018,EPC9038,EPC9159,EPC9039,EPC2007C,EPC21603,EPC9156,EPC9036,EPC9157,EPC9037,EPC2088,EPC7014,EPC21601,EPC9158,EPC90122,EPC9151,EPC9031,EPC90123,EPC90120,EPC9153,EPC9033,EPC90121,EPC9154,EPC90124,EPC9150,EPC90128
【元件】使用EPC新款50V GaN FET设计更高功率密度的USB-C PD应用,尺寸仅为1.8 mm²
EPC推出了50V、8.5mOhm的EPC2057 GaN FET,尺寸仅为1.5mm x 1.2mm,为USB-C PD应用提供了更高的功率密度。加利福尼亚州埃尔塞贡多—2024年6月—EPC是增强型氮化镓(GaN) 功率FET和IC的全球领导者,推出了50V、8.5mΩ的EPC2057。该GaN FET专为满足高功率USB-C设备的不断发展需求而设计,包括消费电子、车载充电和电动出行设备。
产品 发布时间 : 2024-06-26
EPC eGaN®FET/晶体管选型表
EPC提供增强型氮化镓半桥功率晶体管/增强型功率晶体管/功率晶体管的选型:配置:Dual Common Source、Dual with Sync Boot、Half Bridge、Half Bridge Driver IC、HS FET + Driver + Level Shift、Single、Single - AEC Q101、Single – Rad Hard、Single with Gate Diode、Single with Gate Diode – AEC-Q101、Dual Common Source - AEC Q101,VDS最大值(V):15~350V;VGS最大值(V):5.75~7V
产品型号
|
品类
|
Configuration
|
VDSmax(V)
|
VGSmax(V)
|
Max RDS(on) (mΩ)
@ 5 VGS
|
QG typ(nC)
|
QGS typ (nC)
|
QGD typ (nC)
|
QOSS typ (nC)
|
QRR(nC)
|
CISS (pF)
|
COSS (pF)
|
CRSS (pF)
|
ID(A)
|
Pulsed ID (A)
|
Max TJ (°C)
|
Package(mm)
|
Launch Date
|
EPC2040
|
Enhancement Mode Power Transistor
|
Single
|
15
|
6
|
30
|
0.745
|
0.23
|
0.14
|
0.42
|
0
|
86
|
67
|
20
|
3.4
|
28
|
150
|
BGA 0.85 x 1.2
|
Apr, 2017
|
选型表 - EPC 立即选型
【IC】EPC提供100V GaN FET助力实现更小的电机驱动器,用于电动自行车、机器人和无人机
EPC推出三相BLDC电机驱动逆变器参考设计EPC9194,工作输入电源电压范围为14V~60V,可提供高达60Apk的输出电流。此电压范围和功率使该解决方案非常适合用于各种三相BLDC电机驱动器,包括电动自行车、电动滑板车、无人机、机器人和直流伺服电机。
产品 发布时间 : 2023-11-07
Design Higher Power Density USB-C PD Applications with New 50V GaN FET in Tiny 1.8mm² Footprint from EPC
EPC, the world’s leader in enhancement-mode gallium nitride (GaN) power FETs and ICs, launches the 50 V, 8.5 mΩ EPC2057aN FET is specifically designed to meet the evolving needs of high-power USB-C devices including those used in consumer electronics, in-car charging, and eMobility.
产品 发布时间 : 2024-06-13
GaN Transistor for Several Power Applications
GaN transistors are significantly faster and smaller than silicon MOSFETs. The performance of GaN shows that efficiency and performance have improved significantly, leading to several new applications that were not possible with silicon technology. eGaN® FETs, from EPC, are supplied in a low inductance, low resistance, small and low-cost LGA or BGA packages. In addition, they offer designers the best in class compared to MOSFETs in both hard switching and soft-switching applications.
应用方案 发布时间 : 2020-05-17
【视频】EPC发挥其GaN技术优势,将帮助实现高效能电机驱动应用和DC/DC转换器
型号- EPC9173,EPC2302,EPC2304,EPC2306,EPC2305,EPC2308,EPC2307,EPC23102
EPC Showcases Cutting-Edge Power Electronics Solutions for Automotive, Robotics, Power Tools, Solar, and More at PCIM Europe 2024
EPC, the world’s leader in enhancement-mode gallium nitride (GaN) FETs and ICs, is proud to announce its participation in PCIM Europe, the international leading exhibition and conference for Power Electronics, Intelligent Motion, Renewable Energy, and Energy Management. The event, held from 11 June to 13 June in Nuremburg, Germany, brings together industry experts and thought leaders to explore the latest advancements in power electronics and motion control.
原厂动态 发布时间 : 2024-05-30
【应用】EPC车规级GaN场效应管EPC2203应用于激光雷达,脉冲电流可达17A,漏源耐压值可达80V
本文主要介绍EPC汽车级GaN场效应管EPC2203在激光雷达上的应用,主要用在激光雷达发射部分,用于控制激光器的快速开关,优势:漏源耐压值可达80V;持续电流1.7A,最大脉冲电流17A;漏源电阻仅80mΩ,可有效降低系统损耗等。
应用方案 发布时间 : 2022-12-21
EPC GaN FET助力DC/DC转换器实现功率密度和效率基准
EPC GaN FET与Analog Devices驱动器和控制器相结合,为客户简化氮化镓基设计、提高其效率、降低散热成本、助力计算、工业和消费类应用的DC/DC转换器实现最高功率密度。
应用方案 发布时间 : 2024-02-29
EPC GaN FET EPC9192让您实现高性能D类音频放大器,每声道输出功率达700W
EPC宣布推出EPC9192参考设计,可实现优越、紧凑型和高效的D类音频放大器,于接地参考、分离式双电源单端 (SE)设计中发挥200 V eGaN FET器件(EPC2307)的优势,在4Ω负载时,每声道输出功率达700W。
产品 发布时间 : 2024-04-12
电子商城
现货市场
服务
满足150W内适配器、PD快充、氮化镓快充等主流产品测试需要;并可查看被测开关电源支持协议,诱导多种充电协议输出,结合电子负载和示波器进行高精度测试。测试浪涌电流最大40A。支持到场/视频直播测试,资深专家全程指导。
实验室地址: 深圳 提交需求>
登录 | 立即注册
提交评论