【产品】逻辑电平兼容性强的8V低门阀电压P沟道增强型场效应管

2018-06-15 Central Semiconductor
P沟道增强型场效应管,P沟道MOS晶体管,CMPDM8120,Central Semiconductor P沟道增强型场效应管,P沟道MOS晶体管,CMPDM8120,Central Semiconductor P沟道增强型场效应管,P沟道MOS晶体管,CMPDM8120,Central Semiconductor P沟道增强型场效应管,P沟道MOS晶体管,CMPDM8120,Central Semiconductor

Central 推出的SOT-23封装表贴P沟道增强型场效应管CMPDM8120(改变栅压可以改变沟道中的电子密度,从而改变沟道的电阻。这种MOS场效应晶体管称为P沟道增强型场效应晶体管),它最大的优势是提供低导通电阻和低门阀电压,它的门阀电压只有8V,在P沟道MOS晶体管中属于阈值较低的,能兼容多数的逻辑电平,非常适合工业电子、通信设备和消费电子使用。

                                                                  

                                                    图1   CMPDM8120外形图


Central P沟道增强型场效应管CMPDM8120可应用于负载/功率开关、电源转换电路以及手提式电池设备,它具有的低导通电阻、低导通电压、低门阀电压、SOT-23小封装以及兼容各种逻辑电平等特点,它的机械外形尺寸如下:

                          

                                                         图2   CMPDM8120外形尺寸图


下面是Central P沟道增强型场效应管CMPDM8002在TA=25°C时的相关参数最大值,可知它的门阀电压VGS只有8V,比较低:

参数名称

符号

单位

漏源级电压

VDS

20

V

栅漏级电压

VDG

50

V

栅源级电压

VGS

8

V

漏级持续电流

ID

950

mA

源级持续电流

IS

360

mA

漏级最大峰值电流

IDM

4

A

源级最大峰值电流

ISM

4

A

功率损耗

PD

350

mW

运作和存储温度

TJ,Tstg

-65至150

°C

热阻

ӨJA

357

°C/W



电气特性(TA=25°C时),可知它导通和关闭在20nS左右也比一般的PMOS管快速: 

符号

测试条件

最小值

典型值

最大值

单位

IGSSF,IGSSR

VGS=8V,VDS=0V


1.0

50

nA

IDSS

VDS=20V,VGS=0V



1.0

μA

IDSS

VDS=50V,VGS=0V,Tj=125°C


5.0

500

μA

ID(ON)

VGS=10V,VDS=10V

500



mA

BVDSS

VGS=0V,ID=250μA

20

24


V

VGS(th)

VGS= VDS,ID=250μA

0.45

0.76

1.0

V

VDS(ON)

VGS= 10V,ID=500mA



1.5

V

VDS(ON)

VGS= 5V,ID=50mA



0.15

V

VSD

VGS= 0V,IS=360mA



0.9

V

RDS(ON)

VGS= 4.5V,ID=0.95A


85

150

mΩ

RDS(ON)

VGS= 2.5V,ID=0.67A


130

200

mΩ

RDS(ON)

VGS= 4.5V,ID=0.77A


85

142

mΩ

RDS(ON)

VGS= 1.8V,ID=0.2A


190

240

mΩ

gFS

VDS= 10V,ID=810mA

2



S

Crss

VDS=16V,VGS=0V,f=1.0Mhz


80


pF

Ciss

VDS=16V,VGS=0V,f=1.0Mhz


200


pF

Coss

VDS=16V,VGS=0V,f=1.0Mhz


60


pF

Qg(tot)

VDS =10V,VGS =4.5V,ID=1A

3.56



nC

Qgs

VDS =10V,VGS =4.5V,ID=1A

0.36



nC

Qgd

VDS =10V,VGS =4.5V,ID=1A

1.52



nC

Ton, Toff

 

 

VDD=10V,VGS =4.5V,ID=950mA,RG=6Ω


Ton=20

Toff= 25


ns

 

为何Central P沟道增强型场效应管CMPDM8002具有优势?

众所周知,PMOS电路工艺简单,价格便宜,只是P沟道MOS晶体管阈值电压的绝对值一般偏高,要求有较高的工作电压,但CMPDM8120 的门阀电压VGS只有8V比较低,能和大多数工作电压偏低的电路兼容,而且导通和关闭的速度也比一般的PMOS管要高,再融合它工艺简单价格低的优势,非常适合应用在工业设备、通信设备和消费电子上。

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型号- CMUT3904,CMDZ10L,CMXZ9V1TO,CMZ5935B,P4SMA16A,CMUT3906,CMPZDC2V7,CMPZDC36V,CMSZ5252B,P6SMB56A,CLL4754A,CMF64A,CMR1U-04FL,CMPD2003,CMDZ10V,CMKBR-6F,CMDZ11L,CMZ5936B,CMFSH-3I,CMZ5926BP,CMPD2004,P4SMA17A,CMSZ5253B,CZT2222A,CZR1-04,5SMC100A,CMXZ7V5TO,3SMC5.0A,CLL4753A,1SMB7.5CA,CTLDM7120-M621H,CMDZ11V,CMUDW6001,1.5SMC13CA,CMUD6263E,CMDZ12L,CMSZ5250B,CMZ5933B,CMZ5939BP,P4SMA18A,CLL4752A,1SMB130A,CMHZ5229B,CMPZDC39V,CMDZ12V,1SMB9.0A,3SMC170A,1SMB51A,1SMC110A,CMDZ13L,CMZ5934B,CFSH05-20L,CMSZ5251B,CMLD6263DO,CMPD6263S,CMLT2907A,CLL4750A,CLL4751A,P6SMB170CA,CMHZ5228B,CMPD6263A,CMDZ13V,CMPD6263C,CTLDM8120-M832DS,CTLZ5V1,CMST3410,CMOZ4L7,1SMC85A,CMSH1-100M 55,CTLZ5V6,CMDZ5251B,CSL05D,CMOZ4L3,1SMB30CA,P6SMB51A,CMXTVS5V6,CMF120A,CMXSTB200,CMZ5931B,CMF60A,CMPZ5261B,CMPT404A,1SMC85CA,CMHZ5227B,CMSH1-60 55,CMPT4033,CBRHDSH1-200,CMPSH05-4,CMF8.5A,CMZ5932B,CMMR1U-08,CMMR1U-06,CMDZ5250B,P6SMB250A,BZV55C7V5,CTLTVS5V0B,CMPSH-3SE,CMPZ5260B,CMHZ5226B,CBCX68,CBCX69,1SMB54A,CFTVS5V0BULC,CTLDM8002A-M621H,1SMC100CA,CMUT5551E,P6SMB120A,CMXZ20VTO,CMPSH-3,CMPZ5263B,CMDZ4V7,P6SMB51CA,CMHZ5225B,CMDZ4V3,1SMC40A,CMR2-06MFL,CFTVS5V0LC,CMLT3474,CMZ5948BP,P6SMB8.2A,CTLSH1-40M832DS,CMOZ8V2,1SMC7.5A,3SMC12CA,CMDSH2-4L,CMPZ5262B,CMZ5930B,CMZ5913BP,CMHZ5224B,1SMC6.5CA,1.5SMC39CA,5SMC58A,CMLM2205,CMDZ5255B,1SMB78CA,CXDM4060N,C4SMAFL36A,CXDM4060P,CBRLD1-04,CZT7090LE,CMF24A,CBRLD1-02,CMHZ5223B,CMSH1-60HE 55,BZX84C9V1,CBRLD1-08,CBRLD1-06,P6SMB16A,CMJH180,CMKSH-3DO,CMLT3410,CMDZ5254B,1SMB43CA,1SMC170CA,P4SMA170A,CMUD2836,C4SMAFL100A,CMHZ5222B,CMUD2838,1.5SMC47A,1SMB150CA,P6SMB15A,CMF8.0A,CMSZDA8V2,P4SMA10A,P4SMA58A,1SMB10A,1SMC43A,CMDZ5253B,CTLSH10-60M856,1SMB58A,CMHZ5221B,CSHD5-25L,P6SMB91CA,CJD200,1.5SMC170CA,1SMB170A,CMF26A,CZT250K,P6SMB16CA,P4SMA11A,1SMB11A,1SMC150A,CMDZ5252B,CMLZDA7V5,CTLT8099-M322S,1SMC7.0A,CEDM7004VL,CMSH3-100,P6SMB13A,CJD210,CMLD2004DO,CLL4759A,1SMC54CA,P4SMA5.0A,CBRLD1-10,CMPT3906E,CSDD-12N,CMDZ5259B,CMPD2838,P4SMA12A,CMPZ4109,CMPZDA9V1,CMPZ4107,1SMB12A,5SMC54A,CMPZ4108,1SMC45A,1.5SMC220A,CMPZ4105,CMPZ4106,CMPZ4103,CMF160A,CMPZ4104,CMPZ4101,CMPZ4102,CMPD2836,CMPZ4100,CMDZ4L7,CMHZ5267B,P6SMB12A,CMLZDA3V6,CMLT6427E,CMDZ4L3,CMLZDA3V0,CMF20A,CMLTA94,CMLZDA3V3,CLL4758A,CMSH1-100,1SMB5.0A,CSDD-12M,1SMC8.5CA,CMDZ5258B,P4SMA13A,1SMB5.0CA,CMHZ4700,1SMB13A,CMR1-10M,CMPT5551E,P6SMB10A,CMHZ5266B,P6SMB11A,CLL4757A,CMPT3904E,3SMC48A,CBRSDSH2-40,P6SMB100CA,CMDZ5257B,CMR3U-02M,CMXZ4V7TO,P4SMA14A,CMHZ4710,CMHZ4711,1SMB14A,CMOZ4V7,1SMB12CA,CMPZ4123,CMPZ4124,CMPZ4121,CMLZDA43V,CMPZ4122,CMHZ5265B,CMHZ4709,CMPZ4120,CMR1U-10,CLL4756A,3SMC45A,CMF22A,CTLDM7120-M832DS,CMHZ4701,CMHZ4702,CMDZ8V2,CMHZ4703,CMHZ4704,CMKZ5261B,CMHZ4705,CTLSH1-40M621H,CMHZ4706,CMHZ4707,CMHZ4708,3SMC8.0CA,CBRSDSH2-60,CMR3U-01M,CMDZ5256B,P4SMA15A,CMPZ4118,CMPZ4119,CMUSH05-4,CZT2955,CMPZ4116,CMPZ4117,1SMB15A,CMPZ4114,1SMC48A,CMPZ4115,CMPZ4112,CMPZ4113,CMPZ4110,CMSH1-200HE 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目录- MOSFETs   

型号- CMLDM7120TG,CMLDM7002AJ,CXDM4060N,CMNDM8001,CXDM4060P,CMKDM8005,CMLDM7003TG,CMLDM8002AJ,CMLDM7005,CMPDM7002AE,CMLDM7484,CMLDM7003,7002A,CTLDM7002AM621H,CMLDM3737,4060P,CMLDM7003JE,4060N,CMRDM3575,CMLDM5757,7003E,CTLDM8002AM621H,CWDM3011N,CMLDM7120G,CMPDM7120G,CWDM3011P,CTLDM304PM832DS,CMLDM8120TG,2N7002,CTLDM7181-M832D,CTLDM8002AM621,CMPDM7002AHC,CDM3-800,CMPDM202PH,CMPDM8120,3011N,303NH,3011P,CMLDM7585,CMPDM8002A,CMLDM8002A,CMRDM7590,CEDM7002AE,CMLM0708A,7002AE,CDM7-600LR,7590,CWDM305PD,CEDM7004VL,CTLDM712021H-M6,CMLDM7005R,6053N,7-700LR,202PH,3-800,CTLDM8120-M832DS,4-600LR,CMPDM303NH,7120,7002,7001,7004,CZDM1003N,7003,CMUDM8004,7005,CMUDM8005,CTLDM303NM832DS,3069N,CTLDM7003-M621,303N,CMLDM7003E,CXDM6053N,7002AHC,7003TG,CMUDM8001,CEDM8001VL,7-650,CXDM1002N,8002A,CTLDM8120-M621H,304P,7120TG,CWDM305ND,CMLDM7003J,CXDM3069N,CEDM7001VL,CDM7-650,CEDM8001,CEDM8004,CMPDM7003,CMPDM302PH,305N,CDM4-650,1002N,302PH,4-650,305P,3737,CEDM7004,CEDM7001,CTLDM7120-M832DS,CWDM305N,CEDM8004VL,5757,CWDM305P,CMPDM7002A,8001,CDM7-700LR,CMUDM7004,1003N,8004,8005,CMUDM7005,CDM4-600LR,CMLDM3757,CMLDM7002A,CMRDM3590,8120,3590,CMNDM7001,CMPDM203NH,CMXDM7002A,8120TG,CTLDM7002AM621,CMLDM8005,7-600LR,203NH,CMUDM7001,CMLDM8120

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CMPDM8120 Spice model

型号- CMPDM8120

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【方案】机顶盒之Central Semiconductor(中央半导体)型号推荐

描述- 数字机顶盒通过集成编程、VoIP、网络浏览、录像和视频点播成为家庭中的通信枢纽 。 Central Semiconductor(中央半导体)提供广泛的节能、快速开关和低电容产品,以满足机顶盒不断增长的数据速率和功能。

型号- CMPT3906G TR,CMUT3904,CP310-CMPTA42-WN,CMPT3904 BK,CMUT3906,CZT32C,CMPDM7002AG,CSL05D,3SMC,CMHZ5231B,CMPT3906 TR,CMLDM7005,CMF12A,CMXTVS5-4,CMF9.0A,CMHZ5239B,CMF6.5A,CMHZ5235B,CMKD3003DO,CMDZ3V3,CMHZ5227B,CMF5.0A,CMUT3904 TR,CMPTA92 BK,CP392V-CMPT3904-CT,CMF8.5A,CMKSH-3T,CZT31C,CP310-CMPTA42-CT,CMPT3906,CMJ4500,CP792V-CMPT3906-CT,CMHZ5242B,CMPT3904,CMHZ5234B,CBR1-D060S,CMHZ5230B,CMPDM7120G,CMF11A,CMF8.0A,CMUT3906 BK,CMPTA42 TR,CMPD4150,CMHZ5238B,CMHZ5226B,CMPDM302PH,CP710-CMPTA92-WN,CMF7.5A,CMSH5-200HV,CBRHD-06,CMNTVS12V,CMPT3906G BK,CMPDM8120,CMPT3904 TR,CMHZ5233B,CMF10A,CMHZ5241B,3SMC170CA,CMHZ5229B,CMPT3906 BK,CMPTA92,CP392V-2N3904-CM,CMDZ12V,CMF7.0A,CMPLC1V5D,CMHZ5237B,CMATVS3V3,CMPTA42,CMUT3906 TR,CMUDM7005,CMPT3906 TR13,CMPTA42 BK,CMPTA92 TR,CMHZ5232B,CMHZ5240B,CMHZ5228B,CMPT3904G TR,CMSH3-200MHV,CMHZ5236B,CMUT3904 BK,CMF6.0A

应用及方案  -  CENTRAL SEMICONDUCTOR  - 2017年03月03日 PDF 英文 下载

【经验】内置抗ESD等级4KV的TVS管小信号晶体管模块用于车载音响系统按键灯开关线路

Central推出的小信号晶体管模块CMPDM8120,它内置了一颗抗ESD等级4KV的TVS管,并具有小封装、低门阀电压、低导通阻抗等特点,漏源级之间的电压负荷为20V,特别适合用在14V系统的汽车电子产品的开关电路中, 对开关管进行防静电保护。

设计经验    发布时间 : 2018-06-25

Discrete Semiconductor Sample Kit Low Power SMD

型号- CMDSH05-4,CMPDM7002A,CMDSH2-3,CMSSH-3E,CMDSH-4E,CMPD2836E,CMPD2838E,CMPD914E,CMPDM8120,CCLM0300,CMPT2222AE,CCLM1000,CMPDM7120G,CMDSH2-4L,CMPT3904E,CMPDM8002A,CMPT3906E,CMDSH-3

技术文档  -  CENTRAL SEMICONDUCTOR  - 2019/05/27 PDF 英文 下载 查看更多版本

【选型】超薄封装硅材料增强型MOSFETS,适用于高速脉冲放大器和驱动器设计

Central (美国中央半导体) 公司推出三款硅材料增强型MOSFETS——CP373-CMPDM303NH,CP764X-CMPDM8002和CP773-CMPDM302PH,都具有较低导通电阻较低的结电容的特点,还具有体积小、低功耗、高输入阻抗、低噪声等优点,适合应用于高速脉冲放大器和驱动电路。

器件选型    发布时间 : 2018-10-27

请帮忙推荐一下能替代NTR4101PT1G的管,谢谢!

推荐Central Semi(美国中央半导体)CMPDM202PH P-Chanel MOSFET,规格-20V/-2.3A,SOT-23F封装。Datasheet:https://www.sekorm.com/doc/347259.html CMPDM8120,P-Chanel MOSFET,规格-20V/-860mA,SOT-23封装。Datasheet:https://www.sekorm.com/doc/347453.html

技术问答    发布时间 : 2018-11-01

【选型】机顶盒信号输出模块上的MOSFET、小信号晶体管、速开关二极管、限流二极管和ESD瞬态电压抑制器选型推荐

机顶盒的信号输出模块中,Central推荐使用的元器件为:MOSFET(CMPDM8120/CMUDM7005);小信号晶体管(CMPT3904);高速开关二极管(CMPD4150);限流二极管(CMJ4500)和ESD瞬态电压抑制器(CSL05D/CMXTVS5-4),可以提供优异的小信号反馈,较快的开关速度,并限制过大的电流通过,且对ESD瞬态电压有较好的防护能力,保证视频数字信号传输无误。

器件选型    发布时间 : 2019-09-02

PROCESS CP726X Small Signal MOSFET TransistorP-Channel Enhancement-Mode Transistor Chip

型号- CP726X-CMLDM8120-WN,CP726X-CMLDM8120,CP726X-CMPDM8120-WR,CP726X-CMPDM8120-WS,CP726X-CMPDM8120-WN,CP726X-CMLDM8120-WS,CP726X-CMLDM8120-WR,CMPDM8120,CP726X-CMPDM8120,CP726X-CMPDM8120-CT,CP726X-CMLDM8120-CT,CP726X-CMPDM8120-CM,CMLDM8120,CP726X,CP726X-CMLDM8120-CM

数据手册  -  CENTRAL SEMICONDUCTOR  - 22-March 2010 PDF 英文 下载 查看更多版本

【产品】P沟道场效应管和低压肖特基二极管CMLM0584,适用于便携式设备电池供电

Central推出的CMLM0584系列P沟道场效应管和低压肖特基二极管,是一个多分立模块、由单个低rDS(on)的P沟道增强型场效应晶体管和一个低VF的肖特基二极管组成,采用SOT-563表面封装,具有节省空间的优点。

新产品    发布时间 : 2018-05-31

Discrete Semiconductor Sample Kit

型号- CMDSH05-4,CMPDM7002A,CMDSH2-3,CMSSH-3E,CMDSH-4E,CMPD2836E,CMPD2838E,CMPD914E,CMPDM8120,CCLM0300,CMPT2222AE,CCLM1000,CMPDM7120G,CMDSH2-4L,CMPT3904E,CMPDM8002A,CMPT3906E,CMDSH-3

技术文档  -  CENTRAL SEMICONDUCTOR  - 2018/07/30 PDF 英文 下载 查看更多版本

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定制液冷板尺寸5mm*5mm~3m*1.8m,厚度2mm-100mm,单相液冷板散热能力最高300W/cm²。

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