【产品】逻辑电平兼容性强的8V低门阀电压P沟道增强型场效应管
Central 推出的SOT-23封装表贴P沟道增强型场效应管CMPDM8120(改变栅压可以改变沟道中的电子密度,从而改变沟道的电阻。这种MOS场效应晶体管称为P沟道增强型场效应晶体管),它最大的优势是提供低导通电阻和低门阀电压,它的门阀电压只有8V,在P沟道MOS晶体管中属于阈值较低的,能兼容多数的逻辑电平,非常适合工业电子、通信设备和消费电子使用。
图1 CMPDM8120外形图
Central P沟道增强型场效应管CMPDM8120可应用于负载/功率开关、电源转换电路以及手提式电池设备,它具有的低导通电阻、低导通电压、低门阀电压、SOT-23小封装以及兼容各种逻辑电平等特点,它的机械外形尺寸如下:
图2 CMPDM8120外形尺寸图
下面是Central P沟道增强型场效应管CMPDM8002在TA=25°C时的相关参数最大值,可知它的门阀电压VGS只有8V,比较低:
参数名称 | 符号 | 值 | 单位 |
漏源级电压 | VDS | 20 | V |
栅漏级电压 | VDG | 50 | V |
栅源级电压 | VGS | 8 | V |
漏级持续电流 | ID | 950 | mA |
源级持续电流 | IS | 360 | mA |
漏级最大峰值电流 | IDM | 4 | A |
源级最大峰值电流 | ISM | 4 | A |
功率损耗 | PD | 350 | mW |
运作和存储温度 | TJ,Tstg | -65至150 | °C |
热阻 | ӨJA | 357 | °C/W |
电气特性(TA=25°C时),可知它导通和关闭在20nS左右也比一般的PMOS管快速:
符号 | 测试条件 | 最小值 | 典型值 | 最大值 | 单位 |
IGSSF,IGSSR | VGS=8V,VDS=0V | 1.0 | 50 | nA | |
IDSS | VDS=20V,VGS=0V | 1.0 | μA | ||
IDSS | VDS=50V,VGS=0V,Tj=125°C | 5.0 | 500 | μA | |
ID(ON) | VGS=10V,VDS=10V | 500 | mA | ||
BVDSS | VGS=0V,ID=250μA | 20 | 24 | V | |
VGS(th) | VGS= VDS,ID=250μA | 0.45 | 0.76 | 1.0 | V |
VDS(ON) | VGS= 10V,ID=500mA | 1.5 | V | ||
VDS(ON) | VGS= 5V,ID=50mA | 0.15 | V | ||
VSD | VGS= 0V,IS=360mA | 0.9 | V | ||
RDS(ON) | VGS= 4.5V,ID=0.95A | 85 | 150 | mΩ | |
RDS(ON) | VGS= 2.5V,ID=0.67A | 130 | 200 | mΩ | |
RDS(ON) | VGS= 4.5V,ID=0.77A | 85 | 142 | mΩ | |
RDS(ON) | VGS= 1.8V,ID=0.2A | 190 | 240 | mΩ | |
gFS | VDS= 10V,ID=810mA | 2 | S | ||
Crss | VDS=16V,VGS=0V,f=1.0Mhz | 80 | pF | ||
Ciss | VDS=16V,VGS=0V,f=1.0Mhz | 200 | pF | ||
Coss | VDS=16V,VGS=0V,f=1.0Mhz | 60 | pF | ||
Qg(tot) | VDS =10V,VGS =4.5V,ID=1A | 3.56 | nC | ||
Qgs | VDS =10V,VGS =4.5V,ID=1A | 0.36 | nC | ||
Qgd | VDS =10V,VGS =4.5V,ID=1A | 1.52 | nC | ||
Ton, Toff
| VDD=10V,VGS =4.5V,ID=950mA,RG=6Ω | Ton=20 Toff= 25 | ns |
为何Central P沟道增强型场效应管CMPDM8002具有优势?
众所周知,PMOS电路工艺简单,价格便宜,只是P沟道MOS晶体管阈值电压的绝对值一般偏高,要求有较高的工作电压,但CMPDM8120 的门阀电压VGS只有8V比较低,能和大多数工作电压偏低的电路兼容,而且导通和关闭的速度也比一般的PMOS管要高,再融合它工艺简单价格低的优势,非常适合应用在工业设备、通信设备和消费电子上。
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推荐Central Semi(美国中央半导体)CMPDM202PH P-Chanel MOSFET,规格-20V/-2.3A,SOT-23F封装。Datasheet:https://www.sekorm.com/doc/347259.html CMPDM8120,P-Chanel MOSFET,规格-20V/-860mA,SOT-23封装。Datasheet:https://www.sekorm.com/doc/347453.html
技术问答 发布时间 : 2018-11-01
【选型】机顶盒信号输出模块上的MOSFET、小信号晶体管、速开关二极管、限流二极管和ESD瞬态电压抑制器选型推荐
机顶盒的信号输出模块中,Central推荐使用的元器件为:MOSFET(CMPDM8120/CMUDM7005);小信号晶体管(CMPT3904);高速开关二极管(CMPD4150);限流二极管(CMJ4500)和ESD瞬态电压抑制器(CSL05D/CMXTVS5-4),可以提供优异的小信号反馈,较快的开关速度,并限制过大的电流通过,且对ESD瞬态电压有较好的防护能力,保证视频数字信号传输无误。
器件选型 发布时间 : 2019-09-02
PROCESS CP726X Small Signal MOSFET TransistorP-Channel Enhancement-Mode Transistor Chip
型号- CP726X-CMLDM8120-WN,CP726X-CMLDM8120,CP726X-CMPDM8120-WR,CP726X-CMPDM8120-WS,CP726X-CMPDM8120-WN,CP726X-CMLDM8120-WS,CP726X-CMLDM8120-WR,CMPDM8120,CP726X-CMPDM8120,CP726X-CMPDM8120-CT,CP726X-CMLDM8120-CT,CP726X-CMPDM8120-CM,CMLDM8120,CP726X,CP726X-CMLDM8120-CM
【产品】P沟道场效应管和低压肖特基二极管CMLM0584,适用于便携式设备电池供电
Central推出的CMLM0584系列P沟道场效应管和低压肖特基二极管,是一个多分立模块、由单个低rDS(on)的P沟道增强型场效应晶体管和一个低VF的肖特基二极管组成,采用SOT-563表面封装,具有节省空间的优点。
新产品 发布时间 : 2018-05-31
Discrete Semiconductor Sample Kit
型号- CMDSH05-4,CMPDM7002A,CMDSH2-3,CMSSH-3E,CMDSH-4E,CMPD2836E,CMPD2838E,CMPD914E,CMPDM8120,CCLM0300,CMPT2222AE,CCLM1000,CMPDM7120G,CMDSH2-4L,CMPT3904E,CMPDM8002A,CMPT3906E,CMDSH-3
电子商城
品牌:Central Semiconductor
品类:Surface mount-MOSFET
价格:¥0.7919
现货: 16,000
品牌:Central Semiconductor
品类:Surface mount Transistor
价格:¥0.5259
现货: 6,000
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定制液冷板尺寸5mm*5mm~3m*1.8m,厚度2mm-100mm,单相液冷板散热能力最高300W/cm²。
最小起订量: 1片 提交需求>
提供全面表征产品器件耗电特征及功耗波形、快速瞬态效应、电源优化、表征和仿真测试服务,使用直流电源分析仪测量精度达50µV,8nA,波形发生器带宽100kHz,输出功率300W,示波器200kHz,512 kpts
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