【产品】漏源极电压650V的N通道MOSFET 10N65,工作结温稳定为-55℃~+150℃
固得沃克推出的10N65是一款连续漏极电流10A,漏源极电压650V的N通道MOSFET。该产品具有低栅极电荷和低输入电容特性,总栅极电荷典型值仅为60nC( VDS=520V,ID=10A,VGS=10V)。工作结温和储存温度范围均为-55℃~+150℃,具有良好的温度稳定性。反向恢复电荷典型值4.3μC(VGS=0V,IS=10A,dIF/dt=100A/μs),开启延迟响应时间典型值20ns、关闭延迟响应时间典型值55ns(VDD=300V,ID=10A, RG=25Ω),可很好地实现快速切换。10N65系列有ITO-220AB、TO-263和TO-252三种封装可选。
图1 10N65封装
图2 10N65电路图
特点:
●连续漏极电流10A,漏源电压650V
●漏源导通电阻RDS(on)典型值为0.81Ω(VGS=10V,ID=5A)
●低栅极电荷
●低输入电容
●快速切换
●100%雪崩测试
●改进的dv/dt能力
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本文由两斤樱桃翻译自固得沃克,版权归世强硬创平台所有,非经授权,任何媒体、网站或个人不得转载,授权转载时须注明“来源:世强硬创平台”。
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目录- 公司简介 半导体分立器件产品概览图和应用介绍 三极管 MOS管 光电耦合器OC 线性稳压管LDO 贴片普通整流二极管 贴片快恢复二极管 贴片高频二极管 贴片超快恢复二极管 贴片肖特基势垒二极管 直插普通整流二极管 直插快速恢复二极管 直插高频二极管 直插超快恢复二极管 直插肖特基势垒二极管 高压二极管 LOW VF二极管 MINI桥堆 扁桥 方桥 圆桥 TVS瞬变电压抑制二极管 Zener稳压二极管 光伏组件通用二极管 小信号二极管 ESD静电保护管 包装规范 品质政策和品质系统 产品封装图
型号- 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可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。
实验室地址: 西安 提交需求>
可定制位移传感器量程范围10~600mm,该YWD型位移传感器表面有带刻度的透明窗☐,每毫米的变化量误差不超过3ue/mm,可在静态、准静态和低频动态下工作。主要指标:非线性<0.2%;供桥电压<10v;测试精度:0.01mm。
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