FORESEE FBGA-78 Packaged DDR3L, Holding Fast to High Industry Standards and Improving Data Transmission Efficiency with Lower Power Consumption
Foreword: With the ongoing development of 5G and Internet of Everything (IoT) technologies, smart electronic devices have posed higher requirements for the reliability, stability, and compatibility of small-capacity storage products.
FORESEE, Longsys' embedded storage brand, follows the trend of the information age. Following the launch of FBGA-96 packaged DDR3L at the end of 2019, it launched FBGA-78 packaged DDR3L, which is leading in process, speed, power consumption, and stability.
Providing a variety of options for industry customers
Verification of multiple platforms, delivering high compatibility
FORESEE DDR3L, as one of the JEDEC-compliant storage products, prioritizes the verification of mainstream platforms during product development, helping it effectively avoid compatibility issues.
Longsys has established strategic partnerships with multiple master chip platforms. FORESEE DDR3L products have applied for verification on 55 master chip models of such platforms as HiSilicon, MTK, Amlogic, Mstar, RockChip, Allwinner, GOKE, and TouchMore, among which, 24 passing AVL verification, 31 under verification. Almost all of the master chip models available are covered, providing chip-level support for different application scenarios.
Features
25nm process, more advanced
FORESEE DDR3L products use the 25nm process, which is more advanced and popular than the conventional 38nm process. The product performance has been upgraded, enabling lower standby and working current while keeping reasonable costs.
JEDEC-compliant, higher applicability
FORESEE DDR3L products are developed in strict accordance with the JESD79-3F standard and have passed its strict verification on reliability (such as 1000 hours of HTOL and LTOL). These products have been widely used in the market.
High clock speed, improving data transmission efficiency
Thanks to a high clock speed, FORESEE DDR3L products enable efficient reading and writing (reading speed up to 1066 MHz and transmission rate up to 2133 Mbps). The best-in-class rate greatly improves data transmission efficiency.
ZQ calibration, ensuring signal integrity
ZQ, a new pin of DDR3L, is connected with a low tolerance reference resistor of 240ohms. ZQ uses the on-die calibration engine (ODCE) to automatically verify the on-resistance of the data output driver and the resistance of the on-die termination (ODT), ensuring signal integrity.
Lower power consumption, extending product service life
Low voltage working mode: The 1.35V voltage enables lower power consumption than the 1.5V voltage. The 1.35V voltage is also the lowest in its class.
Automatic temperature refresh: After startup, the temperature sensor built into the DRAM chip will control the refresh frequency to lower the working temperature without losing data, thereby reducing power consumption.
Partial self-refresh: Users can refresh only certain logic banks to minimize the power consumption caused by the refresh and lower the power consumption.
Reset: When executing a command, DDR3L will stop all operations and switch to the state with the least amount of activity to reduce power consumption.
Conclusion:
FORESEE DDR3L, as one of the products of Longsys Micro Storage Unit, holds fast to Longsys' excellent quality management and high-standard production yield, aiming to deliver quality products, convenient services, and smooth supply chains to industry customers.
Since the establishment of the Micro Storage Unit three years ago, its products have been mass-produced by more than 200 customers worldwide, and have passed AVL verification by 25 mainstream platforms and 100+ master models, with total shipment volume exceeding 100 million pieces. These products fully meet the industry customers' need for small-capacity and compact storage products in terms of performance, reliability, and compatibility.
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本文由玄子转载自FORESEE News,原文标题为:FORESEE DDR3L, Holding Fast to High Industry Standards,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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产品型号
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品类
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Density(Mb、Gb、GB、TB)
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Speed(MT/s、Gbps、MHz)
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Voltage (V)
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Memory
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Temp. Range (℃)
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Bus
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Interface
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Package
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Size (mm)
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FI4S26M016GSC3
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DDR4 DIMM
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16GB
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2666MT/s
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1.2V
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DDR4
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0℃ to 85℃
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64bits
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260pin
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SODIMM
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69.6 x 30mm
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