【产品】采用垂直DMOS工艺的N沟道耗尽型场效应晶体管,漏源电压高达415V

2021-12-16 Littelfuse
N沟道耗尽型场效应晶体管,CPC5603,IXYS,LITTELFUSE N沟道耗尽型场效应晶体管,CPC5603,IXYS,LITTELFUSE N沟道耗尽型场效应晶体管,CPC5603,IXYS,LITTELFUSE N沟道耗尽型场效应晶体管,CPC5603,IXYS,LITTELFUSE

CPC5603LITTELFUSE旗下的IXYS推出的N沟道耗尽型场效应晶体管 (FET),采用IXYS集成电路部专有的第三代垂直DMOS工艺,可以实现世界一流的高压MOSFET性能。该器件采用垂直DMOS工艺具有高可靠性,特别适合应用在电信、安全和电源等领域。它另一个主要应用是作为数据访问安排(DAA)设备CPC5620A,CPC5621A和CPC5622A的LITELINK系列的线性稳压器开关/挂钩开关。 


CPC5603导通电阻的典型值为8Ω,最大值为14Ω,漏源电压额定值为415V。它采用 SOT-223 封装,实物和封装引脚配置如图1所示。 与所有 MOS 器件一样,FET结构可防止热失控和热引起的二次击穿。

图1 实物和封装引脚配置


产品特点

• 漏源电压415V 

• 在低温下耗尽型器件可提供低漏源导通电阻RDS(on)

• 低导通电阻:8Ω(典型值)@ 25°C

• 低 VGS(off) 电压:-2.0V 至 -3.6 V

• 高输入阻抗

• 低输入和输出泄漏

• 小尺寸SOT-223封装

• 兼容PC卡(PCMCIA)

• 节省PCB空间和成本


应用领域

• 支持LITELINK™ 数据访问安排 (DAA) 的组件

• 电信

• 常开开关

• 点火模块

• 转换器

• 安全

• 电源


关键参数

授权代理商:世强先进(深圳)科技股份有限公司
技术资料,数据手册,3D模型库,原理图,PCB封装文件,选型指南来源平台:世强硬创平台www.sekorm.com
现货商城,价格查询,交期查询,订货,现货采购,在线购买,样品申请渠道:世强硬创平台电子商城www.sekorm.com/supply/
概念,方案,设计,选型,BOM优化,FAE技术支持,样品,加工定制,测试,量产供应服务提供:世强硬创平台www.sekorm.com
集成电路,电子元件,电子材料,电气自动化,电机,仪器全品类供应:世强硬创平台www.sekorm.com
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本文由闯天涯翻译自Littelfuse,版权归世强硬创平台所有,非经授权,任何媒体、网站或个人不得转载,授权转载时须注明“来源:世强硬创平台”。

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数据手册  -  LITTELFUSE  - 4/25/23 PDF 英文 下载

IXYS Integrated Circuits Division Business Unit Presentation

型号- CPC1217Y,CPC40055ST,PTV312S,CPC5902,CPC3720,CPC1335P,CPC3960,NCD2400,CPC1002N,PAA150,CPC1018N,PAA190,PAA193,LCA110S,CPC1966Y,CPC1593,CPC3730,CPC1596,LBA127P,LCB710S,CPC1510GS,NCD2400M,CPC1219Y,LCC120S,CPC1017N,LCA717,CPC370,LCA712,CPC3703,CPC1317P,PLB190,CPC3902,LH1510ABB,CPC5603,CPC1393G,CPC3701,CPC5602,LOC110,CPC3980,LOC111,CPC1705Y,LOC112,PLA143,CPC3982,CPC5001,PBA190,CPC5002,CPC1511Y,CPC2317N,CPC1983Y,CPC1020N,IX4340,CPC3909,PLA171PHTR,CPC1968J,LBA110S,CPC1016N,CPC1117N,CPC1008N,CPC3714,CPC1394G,CPC3710,PLA192,PLA193,PLA194,CPC1390G,FDA217,NCD2100

技术文档  -  LITTELFUSE  - April 2019 PDF 英文 下载

CPC3909 400V, 6Ω N-Channel Depletion-Mode FET

型号- CPC3909C,CPC3909CTR,CPC3909,CPC3909ZTR,CPC3909Z

数据手册  -  IXYS  - 6/6/2024 PDF 英文 下载 查看更多版本

CPC3982 800V, 380Ω N-Channel Depletion-Mode FET

型号- CPC3982T,CPC3982TTR,CPC3982

数据手册  -  IXYS  - 6/6/2024 PDF 英文 下载 查看更多版本

数据手册  -  IXYS  - 11/10/2022 PDF 英文 下载

CPC3701 60V, Depletion-Mode, N-Channel Vertical DMOS FET

型号- CPC3701,CPC3701C,CPC3701CTR

数据手册  -  LITTELFUSE  - R06  - 4/10/2015 PDF 英文 下载

CPC3730 350V N-Channel Depletion-Mode FET

型号- CPC3730C,CPC3730,CPC3730CTR

数据手册  -  LITTELFUSE  - R01  - 8/11/2016 PDF 英文 下载

【产品】最小击穿电压60V的N沟道耗尽型场效应晶体管,可实现世界一流高压MOSFET性能

LITTELFUSE的子公司IXYS公司推出了一款采用IXYS 集成电路部门专有的第三代垂直DMOS工艺的N沟道耗尽型场效应晶体管——CPC3701。垂直DMOS工艺可提供具有高输入阻抗的稳健器件,可实现世界一流高压MOSFET的性能,特别适用于大功率应用。该芯片具有高度可靠性,已广泛应用于工业和安全应用的固态继电器中。它与所有MOS器件一样,FET结构可防止热失控和热引起的二次击穿。

新产品    发布时间 : 2018-07-22

CPC5602 N-Channel Depletion Mode FET

型号- CPC5602,CPC5602CTR

数据手册  -  IXYS  - R10  - 7/20/2015 PDF 英文 下载 查看更多版本

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低功耗测试

提供全面表征产品器件耗电特征及功耗波形、快速瞬态效应、电源优化、表征和仿真测试服务,使用直流电源分析仪测量精度达50µV,8nA,波形发生器带宽100kHz,输出功率300W,示波器200kHz,512 kpts

实验室地址: 深圳/苏州 提交需求>

晶体匹配测试

提供CE测试服务,通过晶体回路匹配分析,给出测试报告。支持EPSON所有MHz无源晶体、32.768KHz晶体。支持到场/视频直播测试,资深专家全程指导。

实验室地址: 深圳/上海 提交需求>

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