The Advantages of Using GaN-based Inverters Instead of Silicon-based Inverters for Motor Drive Designs
This article discusses the advantages of using GaN-based inverters instead of silicon-based inverters for motor drive designs to operate smoother while reducing size and weight. These advantages are critical for motor drives used in typical applications such as warehousing & logistical robots, servo drives, e-bikes & e-scooters, collaborative and low voltage robots and medical robotics, industrial drones, and automotive motors.
Omdia forecasts that worldwide shipments of warehousing and logistics robots will grow rapidly over the next 5 years from 194,000 units in 2018 to 938,000 units annually by 2022, with the rate of growth slowing after 2021 as many major players will have adopted robotic systems by then. Worldwide revenue for this category will increase from $8.3 billion in 2018 to $30.8 billion in 2022, providing significant opportunities for established participants and emerging players.
GaN Advantages
GaN FETs and GaN ICs switch faster and smoother and have zero reverse recovery compared to equivalently specified silicon MOSFETs. This faster and better switching allows operation at higher switching frequencies in inverter designs to eliminate electrolytic capacitors. Further, GaN can operate at a minimal dead time, which increases the effective torque per ampere obtained from the motor, thus making the motor more efficient. In addition, GaN allows for the integration of the inverter with the motor resulting in an overall reduction in size and weight of the system. Table 1 shows a comparison of EPC GaN FETs vs. MOSFETs with similar RDS(on) ratings.
Table 1:Key parameter comparision of EPC GaN FETs vs. MOSFETs
In a typical motor design, the PWM frequency is between 20 and 40 kHz, with dead times between 100 ns and 500 ns. The input cables can be at least 10 to 20 cm long and become a source of EMI, conducted or radiated. Therefore, in traditional motor drive designs, it is common to add an input EMI LC filter. We will show that this can be eliminated in GaN-based motor drive designs.
Capacitor Selection
When comparing electrolytic with ceramic capacitors, remember that RMS current in the capacitor does not depend on PWM frequency, while the voltage ripple is inversely proportional to PWM frequency and capacitance. Therefore, electrolytic capacitors are sized with RMS current. They are oversized, and their value does not change with PWM frequency. Ceramic caps are sized with voltage ripple and are sized in line with the minimum required capacitance. Their value and size decrease with increasing PWM frequency. 100 kHz operation is a sweet spot for ceramic capacitors ESR. This demonstrates a clear advantage of ceramic capacitors in terms of occupied volume reliability, cost, and EMI.
Dead-Time Effect
Figure 1
On the left side of Figure 1, the effect of 500 ns dead time on a motor operated at 20 kHz PWM is shown. There are six discontinuities in the current, circled in orange. These discontinuities are responsible for the 6th harmonic in the torque. It is an even harmonic, so it produces only vibration.
On the right side of Figure 1, it is shown that by reducing the dead time to 14 ns, the discontinuities disappear, as does the 6th harmonic.
In Figure 2, the torque signal is obtained with a torque/speed transducer and analyzed with FFT. The 6th (even) harmonic of the torque signal that is present on the left when the dead time is 500 ns is completely absent when dead time is reduced to 14 ns in the setup on the right.
Figure 2
In the EPC Italy Motor Drive lab, an experiment was run to further evaluate these differences. Two systems, both at 36 VDS, 5ARMS, and 400RPM, are compared. Setup 1 uses 2x330µF electrolytic capacitors and 1x2.7µH input inductors, running at 20 kHz with 500 ns dead time, typical of a traditional silicon MOSFET-based motor drive. Setup 2 operates at 100kHz, 14ns dead time, and uses 2x22µF ceramic capacitors and no input inductor, which is something only achievable with GaN.
Table 2 is a summary of the overall impact of the two setups. By running at 100 kHz, the GaN inverter allows the usage of ceramic capacitors in place of bulky electrolytic capacitors. By reducing the dead time it is possible to get more torque per ampere, making the motor more efficient and thus making the overall system more efficient. The higher frequency setup increases the overall system efficiency from 65.3% to 71.8%.
Table 2: Summary of two motor drive setups
Conclusion
The faster and better switching performance of GaN FETs and ICs allows inverter operation at higher switching frequencies to eliminate electrolytic capacitors. Further, GaN can operate at a minimal dead time. This reduction in dead time increases the effective torque per ampere obtained from the motor, making the motor more efficient and allowing for the integration of the inverter with the motor, further reducing overall system size and weight. These advantages are critical for the motor drives used in eMobility solutions, robotics, and drones.
- |
- +1 赞 0
- 收藏
- 评论 0
本文由董慧转载自EPC,原文标题为:Motor Drives Showdown – GaN vs. Silicon,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
相关推荐
How to Design a 2 kW 48 V/12 V Bi-Directional Power Module with packaged eGaN® FETs
This application note introduces a bi-directional high-power EPC9165 converter for mild-hybrid cars and battery power backup units using four EPC EPC2302 packaged eGaN FETs. When converting between 48V and 14.3V, the efficiency exceeds 96% with a 500kHz switching frequency.
设计经验 发布时间 : 2022-08-27
How to Design a 2kW 48V/12V Bi-Directional Power Module with GaN FETs for 48V Mild Hybrid Electric Vehicles
This artical tells how to Design a 2kW 48V/12V Bi-Directional Power Module with GaN FETs for 48V Mild Hybrid Electric Vehicles. A new reference design demo board, EPC EPC9165, is available to help jump start the design of a 2 kW bi-directional converter.
设计经验 发布时间 : 2022-09-01
EPC(宜普)eGaN® 氮化镓晶体管(GaN FET)和集成电路及开发板/演示板/评估套件选型指南
目录- eGaN FETs and ICs eGaN® Integrated Circuits Half-Bridge Development Boards DrGaN DC-DC Conversion Lidar/Motor Drive AC/DC Conversion
型号- EPC2212,EPC2214,EPC2059,EPC2216,EPC2215,EPC2218,EPC2016C,EPC2050,EPC2052,EPC2051,EPC2054,EPC2053,EPC2055,EPC9086,EPC2218A,EPC90153,EPC9087,EPC90154,EPC2069,EPC2102,EPC2101,EPC2104,EPC2103,EPC2106,EPC2105,EPC2107,EPC9018,EPC2065,EPC90151,EPC90152,EPC21702,EPC2100,EPC2067,EPC2221,EPC21701,EPC2066,EPC90150,EPC9097,EPC90145,EPC90142,EPC9098,EPC90143,EPC9099,EPC9092,EPC90148,EPC90149,EPC90146,EPC9094,EPC90147,EPC2219,EPC9091,EPC2619,EPC2036,EPC2035,EPC2038,EPC2037,EPC2014C,EPC2039,EPC9507,EPC2030,EPC9067,EPC2032,EPC2031,EPC9068,EPC2152,EPC2033,EPC9063,EPC9186,EPC9066,EPC8010,EPC9180,EPC2204A,EPC9181,EPC9061,EPC2308,EPC2307,EPC9005C,UP1966E,EPC2203,EPC9004C,EPC2202,EPC2204,EPC2015C,EPC2207,EPC2206,EPC2040,EPC2045,EPC2044,EPC9194,EPC2012C,EPC2019,EPC9049,EPC9203,EPC9204,EPC9205,EPC2252,EPC9166,EPC9167,EPC9047,EPC9201,EPC9041,EPC9162,EPC9163,EPC9165,EPC7020,EPC9160,EPC9040,EPC2024,EPC8009,EPC2302,EPC2001C,EPC2029,EPC2304,EPC2306,EPC2305,EPC8002,EPC2021,EPC9177,EPC2020,EPC9057,EPC9167HC,EPC2023,EPC9179,EPC9058,EPC8004,EPC2022,EPC9059,EPC9173,EPC9174,EPC9055,EPC9176,EPC9170,EPC9050,EPC9171,EPC9172,EPC2010C,EPC2034C,EPC7007,EPC7002,EPC9148,EPC2071,EPC7001,EPC23101,EPC23102,EPC23103,EPC9144,EPC90140,EPC23104,EPC2111,EPC7004,EPC2110,EPC7003,EPC90133,EPC90132,EPC9022,EPC9143,EPC90137,EPC90138,EPC90135,EPC90139,EPC7019,EPC7018,EPC9038,EPC9159,EPC9039,EPC2007C,EPC21603,EPC9156,EPC9036,EPC9157,EPC9037,EPC2088,EPC7014,EPC21601,EPC9158,EPC90122,EPC9151,EPC9031,EPC90123,EPC90120,EPC9153,EPC9033,EPC90121,EPC9154,EPC90124,EPC9150,EPC90128
【IC】EPC推出新型80V、40A eToF™激光驱动器GaN IC,实现更高功率密度激光雷达系统
宜普电源转换公司(EPC)推出新型氮化镓集成电路EPC21701,这是一款80V激光驱动器IC,可提供15A脉冲电流,适用于飞行时间激光雷达应用(ToF激光雷达应用),包括真空吸尘器、机器人、3D安全摄像头和3D传感器。
新产品 发布时间 : 2023-01-18
EPC to Showcase Advanced GaN Power Solutions at PCIM Asia 2024
EPC’s GaN Experts will be available during PCIM Asia, showcasing the latest generation of GaN FETs and ICs in a wide variety of real-world applications including AI servers, robotics, and more.
厂牌及品类 发布时间 : 2024-08-29
Enhancement-Mode Gallium Nitride Technology
型号- EPC2212,N/A,EPC2214,EPC2059,EPC2216,EPC2215,EPC2218,EPC2050,EPC9126,EPC2052,EPC2051,EPC2054,EPC2053,EPC2055,EPC9086,EPC2218A,EPC90153,EPC2102,EPC2101,EPC2104,EPC2103,EPC2106,EPC2105,EPC2107,EPC2065,EPC90151,EPC90152,EPC2100,EPC2067,EPC21701,EPC2221,EPC2066,EPC90150,EPC9097,EPC90145,EPC90142,EPC9098,EPC90143,EPC9099,EPC9092,EPC90148,EPC90149,EPC90146,EPC9094,EPC90147,EPC2219,EPC9091,EPC2619,EPC2036,EPC2035,EPC2038,EPC2037,EPC2014C,EPC9507,EPC2031,EPC2152,EPC9063,EPC9126HC,EPC2204A,EPC9061,EPC2308,EPC2307,EPC9005C,UP1966E,EPC2203,EPC9004C,EPC2204,EPC2207,EPC2206,EPC2044,EPC2012C,EPC9049,EPC2252,EPC9166,EPC9167,EPC9041,EPC9162,EPC9165,EPC7020,EPC9160,EPC9040,EPC2302,EPC2001C,EPC2304,EPC2306,EPC2305,EPC8002,EPC9177,EPC9167HC,EPC9179,EPC9173,EPC9174,EPC9055,EPC9050,EPC9171,EPC9172,EPC7007,EPC2034C,EPC7002,EPC9148,EPC23101,EPC2071,EPC7001,EPC23102,EPC23103,EPC9144,EPC23104,EPC90140,EPC2111,EPC7004,EPC7003,EPC90132,EPC9022,EPC90137,EPC90138,EPC90135,EPC7019,EPC7018,EPC9038,EPC9039,EPC21603,EPC9156,EPC9036,EPC9157,EPC9037,EPC21601,EPC2088,EPC7014,EPC90122,EPC90123,EPC90120,EPC9153,EPC90121,EPC9154,EPC90124,EPC9150,EPC90128
EPC将在PCIM Asia 2024展示先进的氮化镓电源解决方案
作为全球增强型氮化镓 (GaN) FET 和 IC 的领导者,EPC 很高兴宣布将参加 PCIM Asia 2024。该活动将于 8 月 28 日至 30 日在中国深圳举行。EPC 的 GaN 专家将在 PCIM Asia 期间展示最新一代的 GaN FET 和 IC,涵盖包括 AI 服务器、机器人等在内的各种实际应用,探索业内最全面的 GaN 电力转换解决方案组合。
厂牌及品类 发布时间 : 2024-08-26
【视频】EPC发挥其GaN技术优势,将帮助实现高效能电机驱动应用和DC/DC转换器
型号- EPC9173,EPC2302,EPC2304,EPC2306,EPC2305,EPC2308,EPC2307,EPC23102
EPC新型80V、40A的GAN IC,1.7x1.0mm小尺寸,契合激光系统
EPC推出的EPC21701是一款单芯片激光驱动器,包含80V、40A FET、栅极驱动器和3.3逻辑电平输入,用于飞行时间激光雷达系统,包括用于机器人、监控系统和真空吸尘器。它专为用于手势识别、飞行时间测量(ToF测量)、机器人视觉或工业安全的激光雷达系统量身定制。EPC21701激光驱动器使用5V电源电压和3.3V逻辑进行控制。
活动 发布时间 : 2023-02-10
EPC and Analog Devices Collaborate to Deliver up to 2MHz Switching Frequency for the Highest Density DC-DC Converters Using GaN FETs
EPC and Analog Devices introduce reference design using a new Analog controller fully optimized to drive EPC GaN FETs.
新产品 发布时间 : 2022-03-12
EPC2152 ePower™ Stage – Redefining Power Conversion
The EPC2152 is a single-chip driver plus eGaN® FET half-bridge power stage using EPC’s proprietary GaN IC technology. Input logic interface, level shifting, bootstrap charging and gate drive buffer circuits along with eGaN output FETs configured as a half-bridge are integrated within a monolithic chip. This results in a chip-scale LGA form factor device that measures only 3.9 mm x 2.6 mm x 0.8 mm for an 80 V, 12.5 A gallium-nitride based power stage integrated circuit.
新产品 发布时间 : 2020-07-09
【应用】基于GaN(氮化镓)的D类音频放大器,实现高质量、低成本的音质
现在,氮化镓FET和IC的出现正在迎来高质量、低成本D类音频放大器的时代。基于GaN的FET和IC更优异的开关和热性能产生的波形比硅MOSFET所能达到的波形更接近所需的理想波形。采用GaN技术的高级音频D类放大器提供高于A类放大器设计的音质。
应用方案 发布时间 : 2021-09-19
电子商城
现货市场
服务
世强深圳实验室提供Robei EDA软件免费使用服务,与VCS、NC-Verilog、Modelsim等EDA工具无缝衔接,将IC设计高度抽象化,并精简到三个基本元素:模块、引脚、连接线,自动生成代码。点击预约,支持到场/视频直播使用,资深专家全程指导。
实验室地址: 深圳 提交需求>
支持GSM / GPRS 等多种制式产品的射频测试,覆盖所有上行和下行的各项射频指标,包括频差、相差、调制、功率、功控、包络、邻道泄漏比、频谱、杂散、灵敏度、同道干扰、邻道干扰、互调、阻塞等等。满足CE / FCC / IC / TELEC等主流认证的射频测试需求。
实验室地址: 深圳 提交需求>
登录 | 立即注册
提交评论