【应用】国产纳芯微隔离驱动NSI6602用于1KW逆变器,控制MOS管实现升压和逆变过程,降低设计成本和难度
在1KW逆变器的产品中,我们需要先通过升压电路先将48V电池升压到335V,再通过全桥逆变电路将335VDC逆变成220VAC电压,如图1.1所示:
图1.1
国产纳芯微的隔离驱动NSI6602用于驱动Q1-Q6的MOS导通,其具有如下优势:
1、NSI6602为隔离驱动芯片,相比于传统的隔离加驱动芯片的方案集成度更高,成本更优,设计更简便。
2、CMTI值为150KV/μs,相比于光耦加驱动芯片的方案抗扰能力更高。
3、4A的拉电流和6A灌电流能力,对于IGBT的驱动能力更高,开关速度快于做到更快。
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SERIES,NCA1057N-Q1DNR,NSP163X,NSI6602NC-DSPNR,NCA1042BN-Q1,NSI8221WX,NSI66X2,NSI6631ASC-Q1SWR,NSI6602MNC-DSWTR,NCA1042B-Q1DNR,NSI6642,NSI6601C-DSWVR,NIRS2X,NSI6601MB-DSWR,NSI8266SX,NSI6602NB-Q1SPOR,NCA34XX SERIES,NSI6602NC-Q1SPOR,NSD7310A,NSD8306-Q1,NSI6622ND-DLAMR,NSG65N15K,NSD12409-Q1SPR,NSE4250 SERIES,NCA1042CN-DSPR,NSI6602VA-DSWKR,NSI6642D-DLAMR,NCA1051N,NSI6642A-DSWKR,NIRS20N1-DSPR,NIRS21N1-DSPR,NSI6622NA-DLAR,NSC2860X-DQNR,NSI1042-DSWVR,NCA1042C-Q1SPR,NSI6602C-DSWR,NCA1057-Q1DNR,NSI8221CX-DSPR,NPD010N120A-DTOGT,NSI6602VB-Q1SWR,NSI8210CX-DSPR,NSD1026V-QISPR,NSD12416‒Q1,NSI1050-DDBR,NSI8241NX,NSI6602NC-Q1SPNR,NCA1042BN-Q1DNR,NSR10AXX SERIES,NST461,NSD2621X,NCA1042A-Q1,NSI8222WX,NST103,NSI1303D0X,NSI1303E2X,NSI6622A-Q1SWKR,NSI6602VC-DLAR,NSR31 SERIES,NSD16242-DSPR,NCA9555,NSI1052,NSC6360,NSC6362,NSI6622NB-DLAMR,NSI6651ALC-DSWR,NSC6364,NSI6602NA-DSPNR,NSI6622A-DLAR,NSI6622C-Q1SPNR,NCA1042C,NSI8220CX-DSWR,NSI6622C-DSPNR,NSA3166,NCA1042A-Q1SPR,NSIP8941W0-DSWR,NSI6642B-DLAR,NCA1042B-Q1,NSPGD1M,NSPAS3 SERIES,NSD1624-DSPR,NSI6602VA-Q1SWR,NSD1026V-Q1HMSR,NSI8242CX-DSWR,NSI6602MNC-Q1SWTR,NSL2163X-Q1,NST20,NIRS31,NSREF30XX,NCA9545,NSI6622NA-DLAMR,NSI1042,NSI6611,NCA9546,NSI6622B-DSPNR,NCA9306,NCA9548,NSD12416-Q1SPR,NSI6602MC-Q1SWTR,NSI8242NX,NSD8381-Q1QAIR,NSD8308-Q1HTSXR,NCA9617A,NST1001HA,NSI6602VA-DSWR,NSI1303D2X,NSI1050,NSI6601B-DSWVR,NSD7310-DHSPR,NSI6601,NSD731X-Q1,NCA1057N-Q1SPR,NSR7808GXX,NSD7312-Q1HSPR,NSI6602VB-DLAMR,NSI6602MNF-DSWTR,NSD1026V-DHMSR,NSA3300,NSI6602C-Q1SWKR,NSC2860X,NSD11416‒Q1,NSI6622NB-Q1SPNR,NCA1051N-DSPR,NSI6611ASC-DSWR,NSI22C11,NSI8230CX-DSWR,NSI6801B-DSPR,NSI6622A-DSPNR,NSD12409‒Q1,NSD5604NE-DHTSTR,NSPDSX SERI
【选型】国产单通道隔离驱动NSi6801C-DSWFR用于伺服器,瞬态抗扰度为150kVμs
某用户在验证伺服驱动器时,需要找一款隔离驱动,最好是国产的,推荐了纳芯微的单通道隔离驱动器NSi6801C-DSWFR,它的共模瞬态抗扰度为150kVμs,驱动侧电源可达32V,可以应用于伺服驱动器。
NSI66x2x High Reliability Isolated Dual-Channel Gate Driver Datasheet
型号- NSI6602NA-DLAR,NSI6642A-DSPNR,NSI6622VD-DSPOR,NSI6602NB-DSWKR,NSI6622NC-DSWKR,NSI6622VD-DSWR,NSI6642D-DLAR,NSI6622NA-DSPOR,NSI6622VC-DSPNR,NSI6642B-DSPOR,NSI6622ND-DSPNR,NSI6642D-DSWKR,NSI6642D-DSPNR,NSI6622VD-DLAR,NSI6622VA-DSPOR,NSI6642A-DSWKR,NSI6622NA-DSWR,NSI6602NC-DSPOR,NSI6642C-DSWR,NSI6622NA-DLAR,NSI6642B-DSWR,NSI6622ND-DSWKR,NSI6622NB-DLAR,NSI6622VC-DLAR,NSI6642C-DSWKR,NSI6602NA-DSPOR,NSI6642C-DLAR,NSI6622NC-DSPNR,NSI6622ND-DSWR,NSI6602ND,NSI6602NC,NSI6602NB,NSI6602NB-DLAR,NSI6602NB-DSPNR,NSI6602NA,NSI6602ND-DSWR,NSI6622VC-DSWKR,NSI6602NA-DSWR,NSI6622VC-DSWR,NSI6602ND-DSPOR,NSI6622VB-DSPOR,NSI6622NB-DSPOR,NSI6602ND-DLAR,NSI6622NC-DSWR,NSI6622NB-DSPNR,NSI6642B,NSI6622VA-DSWKR,NSI6642C,NSI6642A-DLAR,NSI6642D,NSI6602NA-DSPNR,NSI6622NC-DSPOR,NSI6602NC-DSWR,NSI6622VB-DLAR,NSI6602NB-DSPOR,NSI6622VA-DSWR,NSI6622VA-DLAR,NSI6642B-DLAR,NSI6622VB-DSPNR,NSI6622NA-DSWKR,NSI6622NB-DSWR,NSI6602NC-DSWKR,NSI6622ND-DLAR,NSI6622VB-DSWR,NSI6622VD-DSWKR,NSI6602NB-DSWR,NSI6602ND-DSPNR,NSI6622NB,NSI6622NC,NSI6642A-DSPOR,NSI6622ND,NSI6602NA-DSWKR,NSI6622VD-DSPNR,NSI6622NA-DSPNR,NSI6642B-DSPNR,NSI6622VB,NSI6622NB-DSWKR,NSI6622VC,NSI6622VB-DSWKR,NSI6622VC-DSPOR,NSI6622VD,NSI6622NA,NSI6622ND-DSPOR,NSI6622NC-DLAR,NSI6622VA-DSPNR,NSI6642D-DSPOR,NSI6642D-DSWR,NSI6602ND-DSWKR,NSI6602NC-DSPNR,NSI6622VA,NSI6642A-DSWR,NSI6642A,NSI6642B-DSWKR,NSI6602NC-DLAR,NSI66X2X
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可定制波导隔离器频率覆盖5.5GHz~110GHz,插损损低至0.25dB、隔离度、正向方向功率、封装尺寸参数。
最小起订量: 1pcs 提交需求>
测试范围:扬兴晶振全系列晶体,通过对晶体回路匹配分析,调整频率、驱动功率和起振能力,解决频偏、不起振、干扰、频率错误等问题。技术专家免费分析,测完如有问题,会进一步晶振烧录/修改电路。
实验室地址: 深圳 提交需求>
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