【应用】国产纳芯微隔离驱动NSI6602用于1KW逆变器,控制MOS管实现升压和逆变过程,降低设计成本和难度
在1KW逆变器的产品中,我们需要先通过升压电路先将48V电池升压到335V,再通过全桥逆变电路将335VDC逆变成220VAC电压,如图1.1所示:
图1.1
国产纳芯微的隔离驱动NSI6602用于驱动Q1-Q6的MOS导通,其具有如下优势:
1、NSI6602为隔离驱动芯片,相比于传统的隔离加驱动芯片的方案集成度更高,成本更优,设计更简便。
2、CMTI值为150KV/μs,相比于光耦加驱动芯片的方案抗扰能力更高。
3、4A的拉电流和6A灌电流能力,对于IGBT的驱动能力更高,开关速度快于做到更快。
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可定制波导隔离器频率覆盖5.5GHz~110GHz,插损损低至0.25dB、隔离度、正向方向功率、封装尺寸参数。
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