【产品】Diotec贴片式双向平面齐纳二极管MM3BZ18,齐纳电压典型值为18V,具有急剧的齐纳击穿电压
DIOTEC(德欧泰克)推出的一款商业级贴片式双向平面齐纳二极管MM3BZ18,该二极管耗散功率为200mW,齐纳电压典型值为18V,具有齐纳电压急剧击穿、低漏电流的优点,主要应用在稳压器和调压器中。
图1 产品封装与编码
产品特点:
双向版本
齐纳电压击穿急剧
低漏电流
符合RoHS、REACH标准
机械数据:
编带和卷盘包装:3000/7”
重量约0.01g
焊接和装配条件:260℃/10s ,MSL(湿度敏感等级)=1
应用领域:
稳压器和调压器(对于ESD保护应用参照ESD3Z系列)
商业等级
最大额定值 (TA=25℃,除非其它说明)
电气参数表
电气参数表2(Tj=25℃,除非其它说明)
1. 采用tp = 5 ms的脉冲测试
2. 安装在每个引脚有1cm2铜焊盘的PCB上测量
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Diotec(德欧泰克)推出的SMD平面齐纳二极管MM3BZ18GW和MM3BZ27GW,采用SOD-323封装,反向电压分别为18V和27V,耗散功率为200 mW,最高结温150℃,结到环境热阻的典型值为417 K/W。具有齐纳电压急剧击穿和低反向漏电流的特点,符合RoHS、REACH指令和冲突矿物法等特点,主要应用于稳压/调压器。
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DIOTEC Zener Diodes选型表
提供了Diotec齐纳二极管选型,稳压值2.4~200V
产品型号
|
品类
|
Type
|
Package
|
Zener Voltage Vzmin[V]
|
Zener Voltage Vznom[V]
|
Zener Voltage Vzmax[V]
|
Zener Voltage Iztest [mA]
|
Power Dissipation Ptot[W]
|
Junction Temperature Tjmax[℃]
|
Leakage Current IR[µA]
|
Leakage Current VR[V]
|
Dynamic Resistance rzj[Ω]
|
1N5345B
|
Zener Diodes
|
Axial
|
DO-201
|
8.20
|
8.70
|
9.20
|
150.00
|
5.000
|
150
|
10.000
|
7
|
2.0
|
选型表 - DIOTEC 立即选型
MM3BZ18GW,MM3BZ27GW SMD平面齐纳二极管
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型号- MM3BZ18GW-Q,MM3BZ27GW,MM3BZ18GW
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目录- Diodes/High Voltage Rectifier
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DIOTEC Rectifiers选型表
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产品型号
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品类
|
Type
|
Package
|
Repetitive Peak Reverse Voltage VRRM[V]
|
Maximum Average Forward Rectified Current IFAV[A]
|
Junction Temperature Tjmax [℃]
|
Peak Forward Surge Current IFSM[A]
|
Forward Voltage VF[V]
|
Forward Voltage IF[A]
|
Leakage Current IR[A]
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Leakage Current VR[V]
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ABS10
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Single Phase Bridge Rectifiers
|
SMD
|
SO-DIL ABS 4mm
|
1000
|
0.8
|
150
|
27
|
1.1
|
0.8
|
5
|
1000
|
选型表 - DIOTEC 立即选型
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产品型号
|
品类
|
Type
|
Package
|
Breakdown Voltage VBRmin[V]
|
Breakdown Voltage VBRmax[V]
|
Breakdown Voltage IT[mA]
|
Peak Pulse Power Dissipation PPPM[W]
|
Junction Temperature Tjmax[℃]
|
Stand-off Voltage VWM[V]
|
Maximum Reverse Current ID @ VWM[µA]
|
Maximum Clamping Voltage Vc[V]
|
Maximum Clamping Voltage IPPM[A]
|
1.0SMBJ28CA
|
Transient Voltage Suppressor Diodes
|
SMD
|
DO-214AA/SMB
|
31.10
|
34.40
|
1
|
1000
|
150
|
28.0
|
1.000
|
45.40
|
22.00
|
选型表 - DIOTEC 立即选型
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