【产品】导通电阻仅为20mΩ的N沟道增强型硅场效应管CXDM4060N,最大电流可以达到6.0A

2017-11-03 Central(世强编辑整理)
N沟道增强型硅场效应管,CXDM4060N,Central Semiconductor N沟道增强型硅场效应管,CXDM4060N,Central Semiconductor N沟道增强型硅场效应管,CXDM4060N,Central Semiconductor N沟道增强型硅场效应管,CXDM4060N,Central Semiconductor

Central 公司推出了一款专为高速脉冲放大器和驱动器应用而生的半导体场效应管--CXDM4060N。CXDM4060N是N沟道增强型硅场效应管,在栅源电压为10V时,导通电阻仅为20mΩ,还提供了低阈值电压,因此大大降低了导通损耗。CXDM4060N还能提供较高电流,最大电流可以达到6.0A,因此可以提供高功率,并且它还有很好的逻辑电平兼容性,在多级电路中使用方便。因此CXDM4060N在大功率和低损耗应用场景下极具优势,是高速脉冲放大器和驱动器很好的选择。


主要特点:

· 低导通电阻:RDS(ON)=20mΩ(VGS=10V,ID=6A)

· 低阈值电压:最小VDS=1.0V,典型VDS=1.7V,最大VDS=3.0V

· 高电流:最大支持6A

· 逻辑电平兼容性强


典型应用:

· 负载/电源开关

· 电源转换器电路

· 电池供电的便携式设备


图1:CXDM4060N产品图


图2:CXDM4060N导通电阻VS电流


技术顾问:Ivan_wu


世强元件电商版权所有,转载请注明来源及链接。

授权代理商:世强先进(深圳)科技股份有限公司
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  • 木鱼 Lv7. 资深专家 2017-12-20
    有机会用用
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Highly Efficient Rectifiers, MOSFETs, and Protection Devices Ideal for Wireless Charging Systems

Wireless chargers have become a popular technology to simplify charging portable electronic products. It is critical that conduction and switching losses are minimized in all semiconductor devices to achieve a high level of efficiency. Central Semiconductor‘s diverse portfolio contains highly efficient rectifiers, MOSFETs, and protection devices ideal for wireless charging systems.

2021-03-26 -  应用方案 代理服务 技术支持 现货查询 批量订货
1-April 2013  - CENTRAL SEMICONDUCTOR  - 数据手册  - R2 代理服务 技术支持 现货查询 批量订货
June 19, 2020  - CENTRAL SEMICONDUCTOR  - 产品变更通知及停产信息 代理服务 技术支持 现货查询 批量订货
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粘结钕铁硼磁铁定制

可定制内充多极外充多极,平面多极和内外螺旋型各类充磁产品,多级充磁最多可做256极,通过环氧树脂加入稀土,模具压制支持多尺寸定制,

最小起订量: 1 提交需求>

位移传感器量程定制

可定制位移传感器量程范围10~600mm,该YWD型位移传感器表面有带刻度的透明窗☐,每毫米的变化量误差不超过3ue/mm,可在静态、准静态和低频动态下工作。主要指标:非线性<0.2%;供桥电压<10v;测试精度:0.01mm。

最小起订量: 1 提交需求>

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