非商品存储提供商Netsol签约,提供高速、低延迟和低功耗内存
韩国非商品存储提供商NETSOL,是一家无厂内存半导体设计公司,以高速、低延迟和低功耗内存设计闻名。产品有异步快速SRAM、低功耗SRAM、同步SRAM、四重SRAM、DDR SRAM和SLC NAND Flash等。
2022年3月1日,Netsol与世强硬创平台签理代理协议,授权世强全线代理旗下异步快速存储芯片、异步低功耗存储芯片、同步存储芯片、四重速率同步存储芯片、单电子非易失闪存等产品、Netsol产品已上线平台,在平台可以获取快速选型,享受供应保障。
Netsol总部位于韩国,成立于2010年,是全球领先的非商品存储提供商。Netsol的Wafer由SK HYNIX & SAMSUNG提供,封测服务则由专业的封测厂家SFA 提供,保证一流的品质。Netsol以高速、低延迟和低功耗内存设计技术而闻名。 查看更多
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本文由周云清提供,版权归世强硬创平台所有,非经授权,任何媒体、网站或个人不得转载,授权转载时须注明“来源:世强硬创平台”。
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NETSOL SRAM产品选型指南
描述- Netsol is a fabless memory semiconductor design house in South Korea, established in 2010. Netsol is developing and marketing non-commodity memory products with high standard of quality and reliability. Current products are Async Fast SRAM, Low Power SRAM, Sync SRAM, Quadruple/DDR SRAM and SLC NAND Flash.
型号- S7K1618U2M,S6L8016W2M,S6R8008C1A,S6LXXXXXXX-PTSS,S7R320982M,S7K6418U2M,S6RXXXXXXX-PTSS,S7B163635M,S7M323635M,S6R3216W1M,S7R161882M,S6R2008C1A,S6R1608W1M,S7S6418U4M,S6L8016W1M,S7A641830M,S7M803635M,S7L3218U2M,S7S1618U4M,S7Q163664M,S7R163682M,S6L2016W1M,S7N321831M,S7R641884M,S6R1616C1M,S7S6436U4M,S6R1016C1A,S7M401835M,S7R320984M,S6L8008C2M,S6R8016W1A,S7Q161864M,S7R161884M,S7M801835M,S7S1636U4M,S7A161830M,S7S4436T4M,S7K6418T2M,S7N801831M,S7K1636U2M,S7I321882M,S6L1008C2M,S7J161882M,S6L2016W2M,S7S6418T4M,S7B643635M,S7A403630M,S6L2008C2M,S6R4008V1A,S7K6436U2M,S7S6436U2M,S7J641882M,S7S1618T4M,S7Q163662M,S7R641882M,S6L4016C2M,S7I643684M,S7T6436T4M,S7R441884M,S7L3236T2M,S7T1636T4M,S7S4436U4M,S7K3236T2M,S7N323631M,S6L1016W1M,S7I161884M,S7Q161862M,S7S3236T4M,S7T3236U4M,S7S4418T4M,S6R1008W1A,S6R2016C1A,S7M641835M,S7T3218T4M,S7M161835M,S7J323682M,S7I163684M,S6R4008W1A,S7R323682M,S7XXXXXXXX-ETSS,S7I643682M,S6L4008W1M,S7B641835M,S7K1618T2M,S7R441882M,S6R2008V1A,S6L8016C1M,S7L3236U2M,S7S4436U2M,S7XXXXXXXX-PTSS,S7S6418U2M,S6R1608V1M,S7A803630M,S7N803631M,S6R1008V1A,S7S4418U4M,S7B161835M,S7I641884M,S7A323630M,S6R4016C1A,S7L3218T2M,S7T3218U4M,S7R323684M,S7I163682M,S7B323635M,S6R2008W1A,S7B803635M,S7N403631M,S7L6418U2M,S6R1616V1M,S6R8008W1A,S7R321882M,S7S3236U2M,S7S4418U2M,S7R640982M,S6L8016C2M,S6R3208W1M,S7M643635M,S6R1608C1M,S7A801830M,S7L6436U2M,S7I641882M,S7S3218U4M,S7L1618U2M,S7A321830M,S7T6436T2M,S7T6436U4M,S7J321882M,S6R1016W1A,S7K3236U2M,S7T1636U4M,S6L2008W2M,S7T4436T4M,S6R8016C1A,S6R1616W1M,S7N641831M,S7R321884M,S7I161882M,S7B401835M,S7S3236U4M,S6L4016C1M,S7T3236T4M,S7M163635M,S6L1008W2M,S6L2008W1M,S6L8008W2M,S7L6436T2M,S7S3218T4M,S7N161831M,S6R1008C1A,S7S6436T4M,S7B403635M,S7R443682M,S7I321884M,S7M403635M,S7S1636T4M,S7T4436T2M,S7T4436U4M,S6R1016V1A,S6L4016W1M,S7R643684M,S7K1636T2M,S7N163631M,S7L1636T2M,S7T4418U4M,S7T6418T4M,S6R4008C1A,S7T4418T2M,S6R4016V1A,S6L4008C1M,S6L2016C1M,S7K6436T2M,S6L4016W2M,S7K3218T2M,S7I323684M,S7T1618T4M,S7J163682M,S6R2016W1A,S7J643682M,S7M321835M,S7R443684M,S7B801835M,S7L6418T2M,S7A643630M,S7A401830M,S7L1636U2M,S7R643682M,S7A163630M,S7T6418T2M,S7T4418T4M,S7T6418U4M,S7B321835M,S6L1016C1M,S6R4016W1A,S7N643631M,S7R163684M,S7T1618U4M,S7S3218U2M,S7N401831M,S7L1618T2M,S7K3218U2M,S7I323682M,S6R2016V1A,S7R440982M
NETSOL MRAM产品选型表
描述- Netsol 是一家位于韩国的无厂内存半导体设计公司,成立于2010年。正在开发和销售高质量、高可靠性的非商品内存产品。目前的产品有异步快速SRAM、低功耗SRAM、同步SRAM、四重/DDR SRAM 和 SLC NAND Flash。主要客户群是工业、商业和通信,Netsol以高速、低延迟和低功耗内存设计技术而闻名。Netsol 获得了韩国中小企业和创业部的“韩国小巨人公司”认证。
型号- S3A1004R0M-HI1A,S3A8004R0M-JI1A,S3R4016V1M-UI70,S3A4004V0M-HI1A,S3A2004V0M-AI1A,S3R1016V1M-XI70,S3A1604V0M-AI1A,S3A8004V0M-JI1A,S3A4004R0M-HI1A,S3A1004V0M-HI1A,S3A2004R0M-AI1A,S3A8004V0M-AI1A,S3A1004V0M-AI1A,S3A2004V0M-JI1A,S3R2016V1M-UI70,S3A1604V0M-HI1A,S3A1604R0M-AI1A,S3A1604R0M-HI1A,S3A1004R0M-AI1A,S3A2004R0M-JI1A,S3R1016V1M-UI70,S3A8004R0M-AI1A,S3R2016V1M-XI70,S3A8004R0M-HI1A,S3A1004R0M-JI1A,S3R1608V1M-UI70,S3R1616V1M-XI70,S3R4008V1M-XI70,S3A4004V0M-JI1A,S3A4004R0M-JI1A,S3R1616V1M-PI70,S3R8016V1M-XI70,S3R8008V1M-UI70,S3A1004V0M-JI1A,S3A8004V0M-HI1A,S3R8016V1M-PI70,S3A1604V0M-JI1A,S3R1608V1M-XI70,S3R4008V1M-UI70,S3R1008V1M-UI70,S3R4016V1M-XI70,S3A2004V0M-HI1A,S3R2008V1M-XI70,S3A2004R0M-HI1A,S3R8008V1M-XI70,S3A4004R0M-AI1A,S3R1008V1M-XI70,S3R2008V1M-UI70,S3A1604R0M-JI1A,S3A4004V0M-AI1A
S6R3216W1B 32Mb Async. FAST SRAM B-die Asynchronous FAST SRAM 1.65V ~ 3.6V Datasheet
型号- S6R3216W1B-XI10,S6R3216W1B-XI08,S6R3216W1B
【产品】S6R16xxx1M系列16位异步快速SRAM,采用先进CMOS工艺,存储容量16M
NETSOL推出的S6R1616(V/C/W)1M和S6R1608(V/C/W)1M是一款存储容量按16(8)位组织为1M(2M)字,16,789,216位的高速静态随机存取存储器。
新产品 发布时间 : 2022-07-23
S6R1616WEB 16Mb Async. FAST SRAM B-die Asynchronous FAST SRAM with ECC 1.65V ~ 3.6V Datasheet
型号- S6R1616WEB-XI10,S6R1616WEB,S6R1616WEB-XI08
S6R4016WEB S6R4008WEB 4Mb Async. FAST SRAM B-die Asynchronous FAST SRAM with ECC 1.65V ~ 3.6V Datasheet
型号- S6R4008WEB-UI10,S6R4016WEB-XI08,S6R4016WEB-UI10,S6R4008WEB-UI08,S6R40XXWEB,S6R4016WEB-XI10,S6R4008WEB,S6R4016WEB-UI08,S6R4016WEB
NETSOL Product List
型号- S7B323635M,S6R1008C1A,S6L8016W2M,S6R8008C1A,S3R2008V1M,S7B403635M,S6R2008W1A,S7B803635M,S7M403635M,S7N323631M,S7B163635M,S7N403631M,S6R1016V1A,S7M323635M,S6L1016W1M,S6L4016W1M,S6R1616V1M,S6R8008W1A,S6R2008C1A,S7N163631M,S6L8016W1M,S3R8016V1M,S6R1008W1A,S6R2016C1A,S6R4008C1A,S7M803635M,S6R4016V1A,S3R1008V1M,S7A801830M,S7M161835M,S3R3208V1M,S6L4016W2M,S3R1608V1M,S6R2016W1A,S6R4008W1A,S3A3204R0M,S3R4008V1M,S7A321830M,S6L2016W1M,S3R2016V1M,S7N321831M,S6R1616C1M,S3A3204V0M,S6R1016C1A,S3A4004R0M,S7M321835M,S7M401835M,S6R8016W1A,S7B801835M,S6R2008V1A,S6R1016W1A,S7M801835M,S7A161830M,S6R8016C1A,S3R8008V1M,S3A1604R0M,S7N801831M,S6R1616W1M,S7A401830M,S3A1004V0M,S3A4004V0M,S3A1604V0M,S3A1004R0M,S7B401835M,S6L2016W2M,S3R1616V1M,S3R1016V1M,S7A803630M,S7A163630M,S7N803631M,S7M163635M,S6R1008V1A,S7B321835M,S3A2004V0M,S6R4016W1A,S7A403630M,S3R3216V1M,S3A8004R0M,S6L8008W2M,S3R4016V1M,S7B161835M,S3A2004R0M,S3A8004V0M,S6R4008V1A,S7A323630M,S7N401831M,S6R4016C1A,S7N161831M,S6R2016V1A
S6R1616W1B S6R1608W1B 16Mb Async. FAST SRAM B-die Asynchronous FAST SRAM 1.65V ~ 3.6V Datasheet
型号- S6R1608W1B-UI08,S6R1616W1B-XI10,S6R1616W1B-YI10,S6R1608W1B,S6R1616W1B-XI08,S6R1616W1B,S6R1616W1B-YI08,S6R1608W1B-UI10,S6R16XXW1B
NETSOL product 停产通知
型号- S6R8016W1A-UI10,S6R1616W1M-XI10,S6R1016W1A-UI10,S6R1016V1A-UI10,S6L1016W1M-UI55,S6L4008C1M-LI55,S6R2016W1A-UI10,S6R4008W1A-UI10,S6R2016V1A-UI10,S6L8008C2M-UI55,S6R4008V1A-UI10,S6L8016W1M-UI55,S6R4016W1A-XI10,S6R1008V1A-LI10,S6R1616V1M-YI10,S6L4016W1M-UI55,S6R1616W1M-YI10,S6L2008W2M-LI55,S6L4008W1M-LI55,S6R4008C1A-UI10,S6L1008C2M-LI55,S6R3216W1M-XI10,S6R4016W1A-UI10,S6R4016V1A-UI10,S6R2008W1A-UI10,S6L2016W1M-UI55
S6R4016V1A 4Mb Async. FAST SRAM A-die Specification Data Sheet
型号- S6R4008V1A-NI08,S6R4008W1A-NI08,S6R4008V1A-NC08,S6R4008W1A-NC08,S6R4016V1A-UI08,S6R4016W1A-UI08,S6R4016V1A-UC08,S6R4016W1A-UC08,S6R4008W1A-UI10,S6R4008V1A-UI10,S6R4016W1A-XI10,S6R4016V1A-XI10,S6R4008W1A-UC10,S6R4016V1A-XC10,S6R4008V1A-UC10,S6R4016W1A-XC10,S6R4008C1A-UC10,S6R4008C1A-UI10,S6R4008W1A-UI08,S6R4008C1A,S6R4008W1A-NI10,S6R4008V1A-UC08,S6R4008V1A-NI10,S6R4016V1A-XI08,S6R4008V1A-UI08,S6R4016V1A,S6R4016W1A,S6R4016W1A-XI08,S6R4016C1A-UC10,S6R4008W1A-UC08,S6R4008W1A-NC10,S6R4016W1A-UI10,S6R4008V1A-NC10,S6R4016V1A-UI10,S6R4016V1A-XC08,S6R4016W1A-XC08,S6R4008V1A,S6R4016V1A-UC10,S6R4016C1A,S6R4016C1A-UI10,S6R4016W1A-UC10,S6R4008W1A
S6R8016WEB S6R8008WEB 8Mb Async. FAST SRAM B-die Asynchronous FAST SRAM with ECC 1.65V ~ 3.6V Datasheet
型号- S6R8008WEB,S6R8008WEB-UI08,S6R8016WEB-XI10,S6R8016WEB,S6R8016WEB-XI08,S6R80XXWEB,S6R8008WEB-UI10
S6R1616V1M 16Mb Async. FAST SRAM Specification Data Sheet
型号- S6R1616V1M-XC10,S6R1616W1M-XI10,S6R1616C1M,S6R1616W1M-YC08,S6R1616W1M-YI08,S6R1608W1M-UI08,S6R1608V1M-UI08,S6R1608V1M-UC08,S6R1608W1M-UC08,S6R1616V1M-XI08,S6R1608C1M-XI10,S6R1616W1M,S6R1616V1M-XC08,S6R1616C1M-YC10,S6R1608V1M-XI10,S6R1608W1M-XI10,S6R1616V1M,S6R1616W1M-YC10,S6R1608C1M-XC10,S6R1616V1M-YI10,S6R1608V1M-XC10,S6R1608W1M-XC10,S6R1616C1M-YI10,S6R1608W1M,S6R1616V1M-YC10,S6R1616W1M-YI10,S6R1608V1M,S6R1616W1M-XC08,S6R1616W1M-XI08,S6R1608V1M-XI08,S6R1608W1M-XI08,S6R1608C1M-UC10,S6R1616V1M-YI08,S6R1608V1M-XC08,S6R1608C1M,S6R1608W1M-XC08,S6R1608V1M-UI10,S6R1608W1M-UI10,S6R1616V1M-YC08,S6R1616C1M-XC10,S6R1608V1M-UC10,S6R1608C1M-UI10,S6R1616V1M-XI10,S6R1616W1M-XC10,S6R1608W1M-UC10,S6R1616C1M-XI10
【产品】存储容量32Mb的S6R32xxx1M系列异步快速SRAM,基于6-TR的单元技术制造
NETSOL推出的S6R3216W1M和S6R3208W1M是容量为33,578,432位的SRAM,采用先进的CMOS工艺、基于6-TR的单元技术制造,专为高速电路技术而设计,特别适用于高密度高速系统应用,采用行业标准的48FBGA和48TSOP1封装。
产品 发布时间 : 2022-06-28
S6R8016W1B S6R8008W1B 8Mb Async. FAST SRAM B-die Asynchronous FAST SRAM 1.65V ~ 3.6V Datasheet
型号- S6R8016W1B-XI08,S6R8016W1B-UI08,S6R80XXW1B,S6R8008W1B-UI08,S6R8016W1B-XI10,S6R8016W1B,S6R8008W1B,S6R8016W1B-UI10,S6R8008W1B-UI10
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可定制变压器支持60W-600W范围,额定电流最高10A,漏感稳定度最小3%;支持开关变压器、电流感测变压器、栅极驱动变压器、LLC谐振变压器、PoE变压器等产品定制。SPQ为5K。
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