【选型】紫光微100V N沟道沟槽式MOSFET应用于1-3KW小功率UPS,Trr低至62ns
UPS即不间断电源,工作原理为通过主回路功率变换单元PFC、逆变电路单元将电能质量较差的电网进行优化,输出稳定的正弦波。UPS主要用于给部分对电源稳定性要求较高的设备,其广泛应用于:工业、通讯、计算机设备、数据存储设备、照明系统等领域,UPS主要作用是稳压、稳频、抗电磁干扰和射频干扰、防浪涌冲击等作用来保护后端负载设备的安全用。本文重点介绍在1-3KW小功率UPS中DCDC部分国产化MOS的选型推荐,下面为UPS主要框图:
图1_在线式UPS主要框图
桥式电路相比半桥电路效率更高,因此该拓扑主要用于大功率(超过1kW)。 全桥LLC电路中四个开关管被分成两组,每组中有两个开关管来各自分担一半的直流供电电压,相比半桥式电路结构输出功率提高了一倍。所以在一些大功率输出的应用中,全桥拓扑变换技术受大部分研发工程师的青睐。
在全桥LLC电路对于功率MOS的要求:
(1)损耗方面,MOS管的损耗取决于导通Rdson,需求低Rdson MOS,由于开关频率较高,MOS管的输入寄生电容要足够低;
(2)感性负载应用场景,需要二极管反向续流,要求功率MOS 二极管反向恢复特性较好,具有较短反向恢复时间trr。
在1-3KW UPS 电池DCDC电路中采取双向全桥LLC拓扑,由于工作频率较高,且电池端电压范围在30-80V,因此在低压大电流应用场景中,对MOS 管的导通Rdson,以及MOS 二极管反向恢复特性哟要求极高。无锡紫光微电子有限公司是紫光集团旗下半导体产业链中的核心企业之一,专注于先进半导体功率器件的研发和销售。推荐使用 TMP160N10A 是无锡紫光微电子推出的漏源电压为100V的N沟道沟槽式MOSFET。
以3kW DC-DC产品为例:
图2_ 3KW UPS拓扑框图
TMP160N10A是无锡紫光微电子推出的100V N沟道沟槽式MOSFET。产品采用高密度电池设计,导通电阻极低,可充分界定雪崩电压和电流,高EAS保证了产品的高稳定性,封装的散热性能出色。TMP160N10A适用于电源开关,高频电路,不间断电源。
全桥LLC MOS Q9~Q12选型推荐100V TMP160N10A 6.5mΩ(@VGS=10V)在3KW UPS中有以下几点优势:
(1)TMP160N10A 100V 耐压,满足最大80VDC输入要求;
(2)TMP160N10A采用TO-220封装,该封装有利于散热,产品的热承受能力较好;
(3) 最大额定值,TMP160N10A的连续漏极电流和脉冲漏极电流分别为150A/600A,电流适应性较好;
(4) 抗浪涌性能力强,栅源电压为±20V。单脉冲雪崩能量为540mJ,雪崩电流为60A,抗浪涌性出色;
(5)满足感性负载场景,自带高性能反向二极管,反向恢复时间trr低至62ns,满足全桥电路对于反向恢复特性的要求;
(6)满足高速开关,TMP160N10A栅极电荷低至32nC,满足高速开关要求;
(7)超低的导通损耗,电阻极低产品采用高密度电池设计,导通电阻极低,可充分界定雪崩电压和电流,高EAS保证了产品的高稳定性,封装的散热性能出色
(8)能量利用效率较高,结壳热阻为0.53℃/W,结至环境的热阻为62.5℃/W。漏源导通电阻最大仅6.5mΩ(@VGS=10V),导通损耗较低,产品的能量利用效率较高。
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型号- 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
无锡紫光微MOS管选型表
无锡紫光微提供以下DT MOS,Multi-EPI Super Junction MOSFET,N-Channel DTMOS,N-Channel Trench MOSFET,P-Channel Trench MOSFET,P-Channel Trench MOSFET,Super-Junction Power MOSFET和Trench MOS的参数选型,ID(A):1~180;RDS(ON)(mΩ)@VGS=10V Typ(Ω):1.3~1290;RDS(ON)(mΩ)@VGS=10V Max(Ω):1.8~1540。
产品型号
|
品类
|
V(BR)DSS(V)
|
ID(A)
|
RDS(ON)(mΩ)@VGS=10V Typ(Ω)
|
RDS(ON)(mΩ)@VGS=10V Max(Ω)
|
V(GS)thmin(V)
|
V(GS)thmax(V)
|
Ciss(pF)
|
Qg(nC)
|
封装
|
TTD30N10AT
|
N-Channel Trench MOSFET
|
100
|
20
|
22
|
27
|
1
|
2.4
|
4529
|
37
|
TO-252
|
选型表 - 无锡紫光微 立即选型
无锡紫光微(UNIGROUP)SJ MOS/SJ-Multiepi MOS/VD MOS/Trench MOS/DT MOSFET选型指南
目录- SJ MOSFET SJ-Multiepi MOSFET VD MOSFET Trench MOSFET DT MOSFET
型号- TPD60R1K0C,TMP11N60H,TMA28N50HS,TPA70R1K5M,TMD4N50H,TPV60R350C,TSB15N10A,TPU50R5K0D,TPW60R075C,TMA9N70H,TPR60R580C,TMA45N30H,TPW60R160M,TPB70R135MFD,TTB95N68A,TPU65R600M,TMP20N40H,TMP12N65H,TMJ2N50HF,TMU3N55LT,TMA8N90H,TMA45N50HS,TTD100N04AT,TMS05P35H,TPU65R600C,TPW90R350A,TMP30N25H,TPD65R4K3C,TMD5N30H,TMA12N50HF,TMA8N50HFE,TMP10N80H,TPP65R380C,TPA60R260MFD,TMW35N60H,TPW55R060D,TMA3N65H,TPV60R240M,TMA3N65L,TMA3N65M,TMA3N65N,TTD85N03AT,TPA70R600M,TPD50R5K4CT,TPW65R044MFD,TMU6N60H,TPD65R450CFD,TMP12N40H,TPA110R550A,TTU03P06ATS,TPU65R1K5M,TSP180N03A,TPY70R1K5C,TMA9N95H,TPA65R940C,TMA4N100H,TPA65R2K2C,TPA70R1K5C,TMU2N55CT,TMA8N50HF,TMA8N50HE,TTP90N03AT,TMA3N66H,TMU5N80H,TPP80R750C,TMA8N50HH,TPU73R400M,TMP12N43H,TMX05P35H,TMA13N65H,TTX2305A,TPB60R580C,TPU60R7K5C,TPD65R2K7C,TMA20N60H,TMP7N65HS,TTP115N08A,TMA08N60HS,TPV65R085CFD,TPA65R190MFD,TPU65R1K2C,TPP65R160C,TMW3N150H,TPB65R300MFD,TPW50R060DFD,TPP100R500A,TPU65R950M,TMP20N65H,TPD65R280D,TMA4N55LT,TPW100R800A,TMA12N60H,TPU70R700C,TMU8N65H,TPP70R260M,TMV25N55H,TPV70R190MFD,TPC80R1K2C,TPB65R750C,TPD65R2K6C,TPA60R170MFD,TPV70R090M,TMA3N55HT,TPA80R250A,TSG10N06A,TPU55R6K5C,TMA28N30H,TPA50R700C,TSJ10N06AT,TPA73R300M,TPU50R5K4C,TSU10N06A,TMP30N10HT,TTB65N10A,TTJ12N04AT,TPA65R170M,TSP12N06A,TPC60R150C,TMA8N70H,TPB50R400C,TTU05P03ATS,TMC6N70H,TMP15P20H,TPP60R260MFD,TMA8N65HS,TSD12N06AT,TMW9N90H,TPP60R600MFD,TMP13N40H,TPW70R120M,TMD7N53HE,TMP1N60C,TMP140N10A,TPP65R360M,TMR12N50H,TTD18P10AT,TPA65R280D,TPV73R300M,TMB160N10A,TMP110N06H,TPW65R100MFD,TTU01P10ATS,TPD55R2K1C,TMD3N50H,TMD2N70H,TSG10N06AT,TPU50R360D,TMP12N60H,TPD60R1K4M,TMU1N50LT,TPU60R360MFD,TMA12N65H,TMU7N65M,TMA10N80H,TTU08N02ATS,TPA70R950C,TPA70R950M,TMP9N90H,TPA60R330M,TMU7N65H,TPC80R1K5C,TMA11N60H,TMP2N60H,TMA20N50HS,TMA3N120H,TMU4N80H,TPD70R360M,TMP4N60HS,TTG130N03GT,TPU50R250C,TTP70N07A,TPV50R060C,TPY70R1K4C,TPP70R170M,TPC60R700C,TPB65R1K2C,TMU4N40HT,TPA70R1K4C,TMA4N55HT,TMV2N60HF,TPA50R2K3C,TMP12N60HS,TPD65R940C,TPG65R365MH,TMV9N90H,TMA13N68H,TPB65R090M,TMU03N60HT,TPD60R840C,TPD65R2K2C,TPU70R2K8C,TTU95N68A,TTP95N68A,TPP65R600M,TMU1N50HT,TMA4N60H,TPC65R380C,TPD70R1K5M,TMA40N20H,TPD60R1K8C,TMA3N80H,TPP65R070D,TTP100N04AT,TSG010N03AT,TPA100R500A,TTD120N03AT,TPP65R075DFD,TPP65R600C,TMU8N60H,TPC50R690C,TMA4N60N,TMA4N60L,TMA4N60M,TMD2N65HT,TPB80R300CFD,TPP65R950M,TMU08N50HT,TPW60R036M,TTD65N04AT,TPA120R800A,TMP162N04H,TPP60R2K5C,TPP70R700C,TPA60R600MFD,TPA80R300A,TMU1N50C,TPP80R1K2C,TPA80R300C,TPW80R300C,TPB65R400MFD,TMU1N50H,TMA5N65H,TMV8N120H,TMD2N50H,TPC70R260M,TMB120N08A,TPA65R520D,TMP120N08A,TPB100R800A,TPP60R700C,TPD70R950M,TMA12N45H,TMA2N50HF,TMU2N55L,TMA10N60N,TPD70R950C,TMD2N50CF,TPP65R700MFD,TMA10N60H,TMW6N90H,TMP50N06HT,TPD80R2K2C,TSG10N06ATC,TPP70R190C,TPP80R1K5C,TPW110R800A,TPP110R550A,TMA2N65H,TPA65R9K2C,TMP25N055H,TPP65R1K2C,TPD70R1K4C,TMD5N50NF,TTP120N02GT,TMP6N90H,TTG40P02ATC,TPD60R1K7C,TMA18N70H,TMA1N60H,TPU65R380C,TPD70R600M,TMP16N25H,TPU80R750C,TTU04N08ATS,TPW70R300MFD,TPA50R500C,TTD28P10AT,TMP8N50L,TMA11N65H,TPA60R1K0C,TMA4N60HF,TPD70R1K5C,TMP8N50H,TMA9N90H,TTP50P06AT,TPV100R500A,TMD8N60H,TMP20N60H,TPU55R2K9C,TPD65R400MFD,TMB140N10A,TPC65R360M,TMA3N60H,TMU9N20H,TPU50R1K8C,TPV80R300CFD,TMP38N30HF,TMA6N65HH,TPB70R120M,TPA60R530M,TMP5N100H,TMA5N20H,TPA73R190M,TPR70R120M,TPU60R600MFD,TPV73R190M,TPU60R2K2C,TPC50R250C,TMA25N50C,TTP118N08A,TMU7N60H,TMA4N65M,TMA4N65N,TMP3N100H,TMU7N60L,TMU1N50CT,TMY1N60H,TMA4N65H,TMP1N20H,TSB12N10A,TMA4N65D,TSU12N06A,TPD55R2K9C,TMA25N50H,TMA3N100HE,TPP60R360MFD,TMC10N65H,TMY1N60B,TPP50R500C,TPW70R044MFD,TPB70R400MFD,TMA10N40L,TTD135N68A,TMW9N95H,TPU50R1K6C,TPV65R080C,TTB80N04AT,TSP045N10A,TPU80R1K2C,TMA10N40H,TMD7N60HF,TPP60R190A,TMA85N08H,TMP15N40H,TTK8205,TPB90R350A,TPC60R350C,TMA12N50NF,TPA120R1K5A,TTG65N10A,TTP115N68A,TMA10N65N,TSP12N10AT,TPB70R450C,TMA6N65HS,TPP65R1K5M,TMA10N65H,TPU50R1K5C,TPC60R240M,TMA18N50H,TPD60R3K4C,TMA2N60H,TPB65R380C,TMD1N65H,TPR65R260M,TMU5N50CF,TPA80R1K2C,TPA65R400MFD,TMV28N55H,TPP80R270M,TMW57N10H,TMA16N60H,TPA65R280DFD,TMD8N55HE,TPP60R580C,TTP150N02GT,TMU3N50H,TSP15N06A,TPP120R800A,TMC10N60N,TPW50R065CFD,TPA70R190MFD,TMP6N40H,TTD120N02GT,TMC10N60H,TMU2N70H,TTP120N03AT,TMU6N60HF,TTJ05P04AT,TMP8N25H,TMU2N70L,TMU5N30HT,TPA70R450C,TMA9N20HT,TMP2N50HT,TMU2N70N,TPC65R940C,TPB65R100MFD,TMA18N20H,TPU60R3K4C,TMV10N90H,TMU02N15AT,TPA80R300CFD,TSU12N10AT,TPW60R260MFD,TPC70R1K5C,TMA25N55H,TMA4N90H,TPV60R190A,TMU1N55LT,TMW45N50HF,TPA55R2K1C,TPD50R500C,TPA60R3K4C,TPC70R950C,TMD8N50H,TMA3N50LT,TPA60R160M,TSG12N06AC,TTP60N10AT,TMA7N55H,TMP7N65M,TPA65R450CFD,TMA5N70H,TPR70R360M,TPA80R1K5C,TSP15N08A,TPU60R1K7C,TMA7N50LF,TPV60R080M,TMD9N20LT,TSG12N06AT,TPC70R1K4C,TMU4N55C,TPY70R1K5MB,TPW65R170M,TPW110R500A,TMA6N50H,TPU80R1K5C,TMU2N50HT,TMS1N40HT,TMP16N65H,TTP55N12A,TPA80R180M,TPU60R1K8C,TPP65R280DFD,TMV20N65H,TSD10N06AT,TMD7N70H,TPW50R055D,TPD50R700C,TPB65R450CFD,TMV3N150H,TMZ1N60B,TMP2N50CT,TPC65R170M,TPW60R120MFD,TPB65R360M,TMW25N50H,TPP50R1K8C,TTG60N03QTC,TPA70R120M,TPP80R300CFD,TMC12N65H,TMD8N53HE,TTD110P03AT,TMZ1N60L,TMV20N60H,TMV11N90H,TMP50N
【产品】TO-220封装的100V N沟道沟槽式MOSFET TMP120N10A,单脉冲雪崩能量达1000mJ
TMP120N10A是无锡紫光微电子推出的漏源电压为100V的N沟道沟槽式MOSFET。该产品采用超低导通电阻的高密度单元设计,可充分界定雪崩电压和雪崩电流,高EAS使产品有高稳定性。该产品主要应用于电源开关,硬开关和高频电路,不间断电源。
【产品】TO-263封装的100V N沟道沟槽式MOSFET TMB140N10A,漏源导通电阻最大仅7.0mΩ
TMB140N10A是无锡紫光微电子推出的漏源电压最大额定值为100V的N沟道沟槽式MOSFET。该产品采用超低导通电阻的高密度单元设计,可充分界定雪崩电压和电流,高EAS使产品有高稳定性,符合RoHS标准,对环境友好,主要应用于电源开关,硬开关和高频电路,不间断电源。
【产品】高EAS、高稳定性的100V N沟道沟槽式MOSFET TMA120N10A,漏源导通电阻最大仅9mΩ
TMA120N10A是无锡紫光微电子推出的漏源电压最大额定值为100V的N沟道沟槽式MOSFET。该产品采用超低导通电阻的高密度单元设计,可充分界定雪崩电压和电流,高EAS使产品有高稳定性。TMA120N10A适用于电源开关,硬开关和高频电路,不间断电源。
【产品】TO-263封装的100V N沟道沟槽式MOSFET-TMB120N10A,漏源导通电阻最大仅9mΩ
TMB120N10A是无锡紫光微电子推出的漏源电压最大额定值为100V的N沟道沟槽式MOSFET。该产品采用高密度单元设计,导通电阻极低,可充分界定雪崩电压和电流,单脉冲雪崩能量较低,产品稳定性高,适用于电源开关,硬开关和高频电路,不间断电源。
【产品】TO-220封装的100V N沟道沟槽式MOSFET-TMP160N10A,单脉冲雪崩能量为540mJ
TMP160N10A是无锡紫光微电子推出的漏源电压为100V的N沟道沟槽式MOSFET。产品采用高密度电池设计,导通电阻极低,可充分界定雪崩电压和电流,高EAS保证了产品的高稳定性,封装的散热性能出色,适用于电源开关,硬开关和高频电路,不间断电源。
无锡紫光微SJ-MOSFET管选型表
无锡紫光微提供SJ-MOSFET管的参数选型,Rdson(mΩ) Vgs=10V FT typ:15.6~2000,Rdson(mΩ) Vgs=10V FT max:18~2200。
产品型号
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品类
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Product State
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封装形式
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Rdson(mΩ) Vgs=10V FT typ
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Rdson(mΩ) Vgs=10V FT max
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BVdss(V) min
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BVdss(V) typ
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ID(A)
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Vth(V)min
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Vth(V)max
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应用建议
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TPW120R800A
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SJ-MOSFET
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M
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TO-247
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640
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800
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1200
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1320
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12
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2.5
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4
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辅助电源/负载电源/电力操作电源/适配电源
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选型表 - 无锡紫光微 立即选型
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服务
可支持TI AM335x/AM5718 和NXP iMX6/iMX8芯片定制核心板和计算单板;支持NXP iMX6核心模组X / F / H系列、TI AM335x核心模组X / N / H系列,与兼容的底板组合定制单板计算机。
最小起订量: 1pcs 提交需求>
可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。
实验室地址: 西安 提交需求>
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