【产品】SOT-89表面贴装的NPN硅晶体三极管CXT853,功耗仅有1.2W
Central Semiconductor(中央半导体)公司推出了一款大电流、高电压的NPN硅晶体三极管CXT853,是PNP三极管CXT953的互补产品。它采用SOT-89表面封装方式,尺寸小,安装方便,同时兼具高能源效率的优点。基于上述特点,CXT853具有广泛的应用领域,比如电源管理、电机驱动、DC/DC变换器和开关等产品中。其实物图如图1所示。
图1 CXT853 NPN硅晶体三极管实物图
相比于CXT953,CXT853 NPN硅晶体三极管具有更高的反向击穿电压和更大的集电极连续电流。在标准测试环境下(测试温度为25℃),CXT853的集电极击穿电压达到200V,集电极连续电流达到6A,可见其兼具大电流和高电压的特点。于此同时其功耗仅有1.2W,具有较高的能源效率,满足低功耗的设计要求。
与CXT953相同,CXT853 NPN硅晶体三极管采用SOT-89封装。图2 是其外形尺寸图,可知其最大外形尺寸为4.7mm×4.5mm×1.7mm,具有尺寸小,安装方便的优点。CXT853 NPN硅晶体三极管具有很强的稳定性,可以在-65至150℃的环境下储存和正常工作,而不会发生故障或者失效。同时CXT853 NPN硅晶体三极管还具有较低的饱和电压,在25℃的测试环境下,当集电极连续电流达到5A,基极连续电流为500mA时,集电极发射极饱和电压仅为340mV。当集电极连续电流IC=5A,基极连续电流IB=500mA时,基极-发射极间饱和压降VBE(SAT)最大值为1.25V,可见其饱和压降很小。
图2 CXT853 NPN硅晶体三极管的结构尺寸图
CXT853 NPN硅晶体三极管有很好的耐压能力,在25℃的测试环境下,其集电极-基极电压BVCBO最小值为200V(IC=100uA)。三极管基极开路时,CXT853 NPN硅晶体三极管的集电极-发射极反向击穿电压BVCEO最小值为100V(IC=10mA)。三极管集电极开路时,CXT853 NPN硅晶体三极管的发射极-基极反向击穿电压BVEBO最小值为6.0V(IE=100uA)。在VCE=2V,IC=10mA时,CXT853的共发射极低频小信号输出交流短路电流放大系数分别为100。其最高截止频率fT为190MHz(VCE=10V, IC=100mA, f=50MHz)。CXT853具体的电气性能如图3所示。
CXT853 NPN硅晶体三极管的主要性能:
·低饱和电压
·与PNP晶体三极管CXT953为互补产品
·大电流,高电压,高能效
·尺寸小,安装简便
CXT853 NPN硅晶体三极管的主要测试参数:
·最大饱和电压:0.34V @ 5.0A
·集电极-基极电压: 200V
·集电极-发射极电压:100V
·发射极-基极电压:6V
·集电极连续电流 :6A
·功耗:1.2W
·工作和储存结温:-65至150℃
·热阻: 104℃/W
CXT853 NPN硅晶体三极管的应用领域:
·电源管理
·电机驱动
·DC/DC变换器
·开关
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本文由青青翠竹翻译自Central Semiconductor,版权归世强硬创平台所有,非经授权,任何媒体、网站或个人不得转载,授权转载时须注明“来源:世强硬创平台”。
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目录- Part Number Index Small Signal Transistors MOSFETs Bipolar Power Transistors Diodes Protection Devices Rectifiers Thyristors Multi Discrete Modules Package Mechanical Specifications
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Central Semiconductor(中央半导体)小信号晶体管选型指南
目录- General Purpose Amplifiers/Switches Low Noise Amplifiers/High Current Transistors RF Oscillator/High Voltage Transistors/Saturated Switches Darlington/Low VCE(SAT) Transistors/Chopper
型号- CMUT3904,8099,CMPTA77,CMST6427E,CMUT3906,A06,3640,CXT5551E,CMKT2222A,CMPT491E,404A,CXTA14,CMPT6429,CMPT6428,CZT651,CMUT5401,CMPT6427,CXT3410,918,CMBT3906E,CMNT3906E,A13,A14,CMPTA64,CMPTA63,CMLT5554,CXT5551HC,CZT5551HC,CZT2222A,CMLT3820G,3906E,CZTA96,CMLTA44,6427E,CXTA27,CMLT5551,CMPT3820,CMST3904,CMXT2207,3646,CMST3906,CMPT5551,CMPT6520,5551HC,CMPTA96,A27,A28,A29,CMKT2907A,CZTA92,CZTA94,CMPT992,CTLT953-M833S,CMPT2222A,930,3410,CZT751,CMPTA92,CMPT3019,CMPTA94,CMLT7820G,5179,5401E,H10,CMLT2907A,3904E,CMUT5179,CZTA77,A92E,CZT2000,CMUT4401,CMPT6517,CMLT491E,CMUT4403,A42,A44,CMLT4413,CMLT8099M,CMST3410,A46,CMUT5088E,CMPT2907A,2222AE,CMLT5551HC,CZT4033,CMLT3946E,953,4401,4403,CMPT404A,CMPT4033,A56,CMLT2222A,CTLM3474-M832D,CXT853,CMPTH81,2484,2000,CMPT591E,CMUT5087E,CXTA64,CMKT5089M10,CMUT3410,A14E,A64,CBCX68,5086,CBCX69,CMPT7410,CMXT3906,5087,68,5088,69,5089,7820,8599,CMPT5401E,CXT3906,CMUT5551E,2369,853,CZT5551E,CBCP68,CBCP69,CMKT3946,A77,CMPT2907AE,CMPTA42E,CMLT3474,CXT953,CXTA44,3904,CXTA42,3906,5401,CXT5401,CXT7820,CTLT7410-M621,CTLT5551-M832D,CMPT4401,CMPT5179,CMST7410,CZT3019,CTLT853-M833S,CXT2907A,CMLT8099,992,751,CMUT5401E,2222A,CZTA27,A92,CZTA28,CMPT4403,A94,A96,CXT5551,CMST2222A,CMLT3410,5551,6520,CMPTA92E,CXT5401E,CMLT5087E,CMLT2207,CMUT7410,CZTA14,3920,6517,CZT900K,H81,CMPTA13,CXT3820,CMPTA14,CMPT3410,CMPT918,CMKT5088,CMKT5087,3019,651,CMLT3904E,CMKT5087E,CZT250K,CMKT3904,CXT491E,CMKT3906,CMXT3946,491E,CMPT3640,CXT3019,CXTA92,900K,CMPT8099,CMXT2222A,CMPTA06,CTLT8099-M322S,CMKT5078,CMPT5088E,CMST2907A,CMPT3646,3820,CMPT3906E,CMLT5078E,CMPT5551HC,250K,5551E,CMPTH10,CZTA64,CMPT5087E,CZT5401,CET3904E,CMLT6427E,CMLT5087EM,CZT853,CMLTA94,CMLT3906E,6427,CMUT2222A,6429,6428,CMPT930,CXT7410,CTLM7410-M832D,CMPT5089,CMPT5087,CMPT5088,CZT3906,CMPT5401,7410,CMPT7820,CMPT8599,2907A,CZT3904,5087E,CMPT5551E,CMPT5086,CMPTA27,CMPTA29,CMPT3906,CMPT3904,CMLT7410,CMUT5551,CMXT2907A,A42E,2907AE,591E,CMPTA56,CTLM3410-M832D,4033,CMPT2484,CZT2907A,CZT953,5088E,CMUT2907A,CMLT5088E,CZTA42,CZTA44,CTLT3410-M621,CZTA46,CMLT5088EM,CET3906E,CMPT2369,CMLT591E,CMBT3904E,CXT2222A,CMPTA46,CMNT3904E,CMPTA42,CMPTA44,CZT5401E,CMPT2222AE,CXT591E,CZT5551,CMKT2207,CXT4033,CMPTA14E
采用to-126F塑料封装的KSA1156硅PNP晶体管
描述- 本资料介绍了KSA1156半导体三极管的特性、应用范围和电气参数。该器件是一款PNP型硅晶体管,具有高击穿电压、低饱和压降和高开关速度的特点,适用于高压开关转换、小功率开关调节器和直流-直流转换等领域。
型号- KSA1156
【产品】采用SOT-23模制塑料封装的PNP型硅晶体管A733,具有全温工作范围内的有效温度补偿
鲁晶半导体推出的三极管A733是PNP型硅晶体管,低动态输出阻抗,全温工作范围内的有效温度补偿,低输出噪声电压,快速通态响应,器件采用SOT-23模制塑料封装,适用于各种开关电路应用设计场景。
采用to-126F塑料封装的KTA1715硅PNP晶体管
描述- 本数据表详细介绍了KTA1715半导体三极管的特性、参数和应用。该器件是一款PNP型硅晶体管,具有低饱和电压、高速开关时间和与KTC2814互补的特点,适用于功率放大和功率转换。
型号- KTC2814,KTA1715
2SC2073 NPN三倍频平面硅晶体管生产规范
描述- 本资料为NPN型三极管2SC2073的生产规格说明,内容包括其特性、电学参数、典型特性和封装尺寸。该器件具有高击穿电压、快速开关速度和宽工作温度范围等特点。
型号- 2SC2073
【产品】采用外延平面工艺制造的NPN型硅晶体管CMXT3904,适用于小信号放大和开关应用
CMXT3904是Central Semiconductor推出的双极型晶体三极管,采用外延平面制造工艺,集成了双NPN型双极型硅晶体管,CMXT3904采用SOT-26的封装,该晶体管的最大功耗PD=350mW,其最大工作温度和存储结温的范围均为-65°C~+150°C,热阻为357°C/W,具有耐高/低温的能力,在恶劣的工作环境条件下也可以保证良好的可靠性,适用于小信号的一般放大和开关应用。
采用to-3P塑料封装的TIP36C硅PNP晶体管
描述- 本资料介绍了TIP36C半导体三极管的特性、应用和规格。该器件是一款PNP型硅晶体管,具有低漏电流和高电流增益带宽,适用于功率放大器和开关应用。
型号- TIP36C,TIP35C
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品牌:Central Semiconductor
品类:Surface mount-MOSFET
价格:¥0.8136
现货: 16,000
品牌:Central Semiconductor
品类:Surface mount Transistor
价格:¥0.5403
现货: 6,000
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可定制LAMP LED、 CHIP LED、 PLCC LED、 汽车用车规级LED、COB LED的尺寸/电压/电流等参数,电压1.5-37V,电流5-150mA,波长470-940nm。
最小起订量: 30000 提交需求>
可定制单色光灯珠、双色灯珠、全彩灯珠、发光二极管、贴片灯珠、贴片LED等产品,尺寸:0.6*0.3mm-3.2*2.7mm,波长:405-940nm,亮度:24-750mcd,电压:1.5-3.5V。
最小起订量: 3000 提交需求>
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