【应用】硅N沟道增强型VDMOSFET HM1N60R适用于节能灯照明方案,导通电阻≤10.5Ω

2023-05-07 世强
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由于传统的照明产品效率低、耗能大,已经不能满足当下能源发展和环境保护要求。因此,节能灯照明已经成为了主流的照明方式。工程师们在设计节能灯照明解决方案时,需要选用低导通电阻、高开关速度、高温性能和抗电压能力的功率MOSFET,来实现对节能灯的精准控制,提高节能灯的效率和亮度。


硅N沟道增强型VDMOSFET是一种应用广泛的功率MOSFET,工程师们可以选用该器件来设计高效、可靠的节能灯照明应用方案。其可以作为节能灯的开关管,通过控制其导通和截止状态,完成节能灯的亮度调节和开关控制。


针对节能灯照明应用方案中硅N沟道增强型VDMOSFET选择,笔者推荐虹美功率半导体HM1N60R。它通过自对准平面技术降低了传导损耗,改善了开关性能,并提高了雪崩能量,从而提高了节能灯的使用寿命和稳定性。通常,在工业、家庭以及商业照明应用场景中,对节能灯的尺寸形状也有不同的要求。采用SOT-223封装形式的HM1N60R体积小、重量轻,可以适应不同灯具的尺寸和形状,实现灵活的组装和布局,能够满足不同应用场景需求。


光线明亮的办公环境,可以提高人们的舒适度和效率。因此,节能灯的亮度尤为重要。虹美功率半导体HM1N60R具有高导通能力,导通电阻低,Rdson不大于10.5Ω,提高了节能灯的工作效率、增强亮度和照明质量,满足了人们工作需求。


同时,在公共场所或者走廊等地方,人们希望节能灯照明设备即时点亮,需要其具备快速的响应能力。虹美功率半导体HM1N60R的上升时间(tr)和下降时间(tf)27ns,输出电容25pF;其快速的响应性能,提高了节能灯的响应速度,从而满足了不同应用场景的需求。

表 1

由上可知,虹美功率半导体HM1N60R,具有低导通电阻、高开关速度和高温性能等优良特性。它可以帮助工程师设计低成本、高效率的节能灯照明方案。

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虹美功率半导体特色产品介绍

型号- HM01N100PR,HMS320N04D,HM35SDN03D,HM4616D,HM3400KR,HM603K,HMS310N85,HMS11N70Q,HMS135N10,HM3N40R,HMS320N04G,HM2818D,HMG20N65F,HM1N50MR,BSS84DW,HMG20N65D,HMC8N120,HM4615Q,HMS100N20,HM2302BSR,HM1N60RPR,HM30SDN02D,HM8205,HM2819D,HM06DP10Q,HM4889,HMS100N15,HM35DN03D,HMG40N65FT,HM4616Q,HMC5N120,HM3N40PR,HMC10N65,BSS138KR,HM605K,HMS10N80F,HMC20N120D,HM4618D,HM3N30R,HM2301BWKR,HMS15N70Q,HMS10N80K,HM05P35MR,HM10DP06D,HMC4N65,HMC2N120K,HM2N50R,HMS30DN08D,HM4N10D,HMS135N85K,HMS135N85G,HMS5N90R2,HMC15N6D,HM2809D,HMC6N65K,HM8810E,HM8810D,HM4618Q,HM8810Q,HMS100N20D,HMC6N65Q,HM1P15MR,HMC15N65,HM2N25MR,HM607K,HMS5N80F,HM3N150F,HM3N150A,HMS80N25,HMS5N80K,HM2301BSR,HMS5N80,HMS5N80I,HMS120N10G,HMS260N10D,HM8205D,HMS320N04,HMS120N10D,HMS120N10K,HMS20N80,HMS5N80R,HM40N120AT,HMC5N120K,HMC4N65K,HM2P15R,HM3N30PR,HM10SDN06D,HMG40N65AT,HMS80N10,HMC20N65D,HM25P15K,HM3N100,HMS80N85K,HMC20N65,HM20SDN04Q,HM10SDN06Q,HMS80N85G,HM2N65R,HM4640D,HMG75N65AT,HMS15N65Q,HMC10N65Q,HM609K,HMC8N65,HMS85N10,HMS80N85D,HMS5N90R,HM40DN04K,HM3800D,BSS84SR,HM2302BWKR,HM9926,HMS120N10,HMS11N65Q,HM2301KR,HM2N65PR,HM6P15K,HM7002KDW,HM5N50R,HM02P30R,HM0565MR,HM8205A,HM4884Q,HMS310N85LL,HMS15N80,HM3N120,HMC2N120,HMS330N06,HMC10N65K,HM4630D,HMS330N06D,HM02P30PR,HM09P12D,HM4620D,HM10DN06D,HMS10DN08Q,HM1N70PR,HM10DN06Q,HMS5N70R2,HMC2N65,HM5P15D,HM2302BKR,HM08DN10D,HMS320N04LL,HMS10N80,HM2810D,HM25SDN03Q,HMN9N65Q,HMS135N85,HM4P10D,HM2302KR,BSS84KR,HMN9N65D,HM4489,HMN11N65D,HM2N50PR,HM2302BJR,HM3N25R,HM4922,HM4923,HM40N120FT,HM4920,HM3400DR,HM4926,HM4924,HM4N60R,HM2310DR,HMS310N85D,HMS260N10LL,HMS20N80T,HMS135N10K,HM4622D,HM3N100F,HM18DP03Q,BSS138SR,HM3N100D,HM8N100A,HM07DP10D,HMS80N25D,HM3DN10D,HMS20N80D,HMS100N15D,HM3N150,HM18DP03D,HMS20N80F,HM8N100F,HM18SDN04D,HMS5N70R,HM2800D,HMC8N65K,HM20DN04Q,HMC8N120K,HMC8N65Q,HM2300DR,HMS100N85,HM5N30R,HM4611D,HM1N60R,HMS260N10,HM20DN04D,HMC15N6T2,HM25N120FT,HM30DN02D,HM6604BWKR,HM40SDN02Q,HMS135N10G,HMG20N65,HMS135N10D,HMC20N120T2,HMS120N85K,HM4P15Q,HM4611Q,HM2309DR,HM4N65R,HM16P12D,HMS80N10K,HMS80N10G,HM2301BJR,BSS138DW,HMS135N85D,HM2301DR,HMS15N80F,HMC6N65,HMS15N80D,HMS100N85D,HMS100N85G,HMS100N85K,HM610K,HM2319D,HMS5N65R,HM10SDN10D,HMS80N10D,HMS7N80F,HM1N70R,HMS7N80K,HM2P15PR,HM7002KR,HMS7N80I,HMS120N85D,HMS5N65R2,HM08SDN10Q,HM2803D,HMS120N85G,HMS120N85,HMC2N65K,HM3801DR,HMS10DN10Q,HMS80N85,HM2318D,HMS5N80R2,HM3N120F,HMS7N80,HM3N120A,HM2N70R,HMS85N10K,HMS85N10G,HM2302DR,HMS13N65Q,HM12DP04Q,HMS85N10D,HM4615D,HM20DN06KA,HM2305D,HM11P20K,HMC20N120,HMS330N06LL,HM5N30PR,HM2301BKR,HM3401DR,HMC20N65T2

商品及供应商介绍  -  虹美功率半导体  - 20230219版  - 20230219 PDF 中文 下载 查看更多版本

数据手册  -  虹美功率半导体  - 2023/11/6 PDF 英文 下载 查看更多版本

虹美功率半导体MOS管特色产品介绍

型号- HM01N100PR,HMS320N04D,HM35SDN03D,HM4616D,HM3400KR,HM603K,HMS310N85,HMS11N70Q,HMS135N10,HM3N40R,HMS320N04G,HM2818D,HM1N50MR,BSS84DW,HM4615Q,HMS100N20,HM2302BSR,HM30SDN02D,HM2819D,HM06DP10Q,HMS100N15,HM4889,HM35DN03D,HM4616Q,HM3N40PR,BSS138KR,HM605K,HMS10N80F,HM3N30R,HM4618D,HM2301BWKR,HMS15N70Q,HMS10N80K,HM05P35MR,HM10DP06D,HM2N50R,HMS30DN08D,HM4N10D,HMS135N85K,HMS135N85G,HMS5N90R2,HM2809D,HM4618Q,HMS100N20D,HM1P15MR,HM2N25MR,HM607K,HMS5N80F,HM3N150F,HM3N150A,HMS80N25,HMS5N80K,HM2301BSR,HMS5N80,HMS5N80I,HMS120N10G,HMS260N10D,HMS320N04,HMS120N10D,HMS120N10K,HMS20N80,HMS5N80R,HM2P15R,HM3N30PR,HM10SDN06D,HMS80N10,HM3N100,HM25P15K,HMS80N85K,HM20SDN04Q,HM10SDN06Q,HMS80N85G,HM2N65R,HM4640D,HMS15N65Q,HM609K,HMS85N10,HMS80N85D,HMS5N90R,HM40DN04K,HM3800D,BSS84SR,HM2302BWKR,HMS120N10,HMS11N65Q,HM2301KR,HM2N65PR,HM6P15K,HM7002KDW,HM5N50R,HM02P30R,HM0565MR,HM4884Q,HMS310N85LL,HMS15N80,HM3N120,HMS330N06,HM4630D,HMS330N06D,HM02P30PR,HM09P12D,HM4620D,HM10DN06D,HMS10DN08Q,HM1N70PR,HM10DN06Q,HMS5N70R2,HM5P15D,HM2302BKR,HMS320N04LL,HM08DN10D,HMS10N80,HM2810D,HM25SDN03Q,HMS135N85,HM4P10D,HM2302KR,BSS84KR,HM2N50PR,HM4489,HM2302BJR,HM3N25R,HM4922,HM4923,HM4920,HM3400DR,HM4926,HM4924,HMS310N85D,HM4N60R,HM2310DR,HMS260N10LL,HMS20N80T,HMS135N10K,HM4622D,HM3N100F,HM18DP03Q,BSS138SR,HM3N100D,HM8N100A,HMS80N25D,HM07DP10D,HMS20N80D,HM3DN10D,HMS100N15D,HM3N150,HM18DP03D,HMS20N80F,HM8N100F,HMS5N70R,HM18SDN04D,HM2800D,HM20DN04Q,HMS100N85,HM2300DR,HM5N30R,HM4611D,HM1N60R,HMS260N10,HM20DN04D,HM30DN02D,HM6604BWKR,HMS135N10G,HM40SDN02Q,HMS135N10D,HMS120N85K,HM4P15Q,HM4611Q,HM2309DR,HMS80N10K,HM4N65R,HM16P12D,HMS80N10G,HM2301BJR,HMS135N85D,BSS138DW,HMS15N80F,HM2301DR,HMS15N80D,HMS100N85D,HMS100N85G,HMS100N85K,HM1N60PR,HM610K,HM2319D,HMS5N65R,HM10SDN10D,HMS80N10D,HMS7N80F,HM1N70R,HMS7N80K,HM2P15PR,HMS7N80I,HM7002KR,HMS120N85D,HMS5N65R2,HM08SDN10Q,HMS120N85G,HM2803D,HMS120N85,HM3801DR,HMS10DN10Q,HMS80N85,HM2318D,HMS5N80R2,HM3N120F,HMS7N80,HM3N120A,HM2N70R,HMS85N10K,HMS85N10G,HM2302DR,HMS13N65Q,HM12DP04Q,HMS85N10D,HM4615D,HM20DN06KA,HM2305D,HM11P20K,HMS330N06LL,HM5N30PR,HM2301BKR,HM3401DR

商品及供应商介绍  -  虹美功率半导体  - 2023/7/21 PDF 中文 下载

数据手册  -  虹美功率半导体  - 2022/11/9 PDF 英文 下载

数据手册  -  虹美功率半导体  - 2024/5/31 PDF 英文 下载

数据手册  -  虹美功率半导体  - 2022/11/7 PDF 英文 下载

数据手册  -  虹美功率半导体  - 2022/11/9 PDF 英文 下载

HM2N65PR

型号- HM2N65PR

数据手册  -  虹美功率半导体  - 2024/5/31 PDF 英文 下载

HM10N80A

型号- HM10N80A

数据手册  -  虹美功率半导体  - 2022/11/9 PDF 英文 下载

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功率MOSFET管检测:动静态参数/热特性/高低温性能/可靠性等参数测试

可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。

实验室地址: 西安 提交需求>

波导隔离器定制

可定制波导隔离器频率覆盖5.5GHz~110GHz,插损损低至0.25dB、隔离度、正向方向功率、封装尺寸参数。

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