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【产品】蓝箭电子推出的N沟道场效应管BRCS18N20DP，采用TO-252塑封封装，Tj温度范围为-55～150℃
蓝箭电子推出的采用TO-252塑封封装的N沟道场效应管BRCS18N20DP，具有低栅电荷,导通电阻低，快速切换应用的优化的特征。该器件适用于低压电路如：汽车电路、DC/DC转换、便携式产品的电源高效转换。
【产品】N沟道MOS场效应管BRCS080N02ZB采用DFN 3*3A-8L塑封封装，适用于低压电路
蓝箭电子推出的N沟道MOS场效应管BRCS080N02ZB，采用DFN 3*3A-8L塑封封装。其VDS(V)值为20V，在VGS=±12V条件下ID值为12.6A，是一种无卤产品。BRCS080N02ZB适用于低压电路如汽车电路、DC/DC转换、便携式产品的电源高效转换。其PD值为100W，IAS值为12.5A，TSTG温度范围为-55~+150°C。
【产品】TO-220塑封封装N沟道场效应管BRCS18N20RA，具有低栅电荷、导通电阻低的特点
蓝箭电子推出的TO-220塑封封装N沟道场效应管BRCS18N20RA，具有低栅电荷，导通电阻低，快速切换应用的优化等特征。该器件适用于低压电路如：汽车电路、DC/DC转换、便携式产品的电源高效转换。
虹美功率半导体（Hongmei Power Semiconductor）MOSFET/GaN(氮化镓)FET选型表（国内独创特色产品）
目录- 小功率低压P/N沟道场效应管 中功率低压P/N沟道场效应管 超级沟槽工艺中功率P/N沟道场效应管 大功率高压N沟道场效应管 高压超结N沟道场效应管 大功率中压大电流P/N沟道场效应管 大功率中压大电流N+P沟道场效应管 大功率中压大电流串联半桥驱动双N沟道场效应管 超级沟槽工艺中压大电流N/P沟道场效应管 GaN(氮化镓) FET管
型号- HM01N100PR,HM3400KR,HM35SDN03D,HM603K,HMS10DN08Q,HM1N70PR,HM10DN06Q,HMS11N70Q,BSS84DM,HM3N40R,HM2818D,HM13N30,HMS20N65D8,HM1N50MR,BSS84DW,HM08DN10D,HM2810D,HM10N06Q,HM4615Q,HMS20N15KA,HMN9N65Q,HM100P35E,HM4P10D,HM6604D,BSS84KR,HM30SDN02D,HM2819D,HM2N50PR,HM06DP10Q,HM3N25R,HMS100N15,HMS3N70R,HM3400DR,HM35DN03D,HM4616Q,HM2310DR,HM4N60R,HM3N40PR,BSS138KR,BSS123DM,HM605K,HMS45N04Q,HM3N100F,HM18DP03Q,BSS138SR,HM3N30R,HM6604DB,HM3N100D,HM8N100A,HM07DP10D,HM2301BWKR,HM3400E,HM3DN10D,HM3N150,HM18DP03D,HMS65N10KA,HM8N100F,HMS5N70R,HM18SDN04D,HM50P35DE,HM2800D,HM10DP06D,HM2N50R,HM20DN04Q,HM10P10Q,HM4N10D,BSS138DM,HM15P06Q,BSS8402DM,HM1N60R,HMS18N10Q,HMS85P06,HM2809D,HM13N25FA,HM3401E,HM6604BWKR,HM12P04Q,HM30DN02D,HMS45P06D,HM4618Q,HMS35N06Q,HM15N25,HM50P03D,HM06N15MR,HM2N25MR,HM607K,HMS6N10PR,HM6803D,HM15N25K,HM2DP10D,HM3N150F,HM3N150A,HM12N20D,HM2309DR,HM4611Q,HM4N65R,HM13N25A,HM25P15,HMS5N80R,BSS138DW,HM4485E,HMS10N15D,HMS85P06K,HMS4488,HM3N30PR,HM10SDN06D,HM2319D,HM1N60PR,HM610K,HM3N100,HMS5N65R,HM100P35KE,HM25P15K,HM10SDN10D,HM1N70R,HM25P15D,HM20P04Q,HMS4N10MR,HM2803D,HM2N65R,HM4640D,HMS10DN10Q,HM609K,HM13N30K,HMS3N65R,HM25N08D,HM13N30F,HM2318D,HM3N120F,HM12DP04D,HM3N120A,HM3N50R,HMS5N90R,HM2N70R,BSS84SR,HM3800D,HM13N25KA,HM2302BWKR,HMS13N65Q,HM6804D,HM7002KDM,HMS11N65Q,HM3N50PR,HM2N65PR,HM7002KDW,HM5N50R,HM02P30R,HM0565MR,HM25N06Q,HM4884Q,HMS50N03Q,HM3801D,HM3N120,HM3401DR,HM4630D,HM02P30PR
虹美功率半导体（Hongmei Power Semiconductor）MOSFET/IGBT单管/Sic(碳化硅)二极管/GaN(氮化镓)FET选型表（产品说明）
目录- 小功率低压P/N沟道场效应管 中功率低压P/N沟道场效应管 超级沟槽工艺中功率P/N沟道场效应管 大功率高压N沟道场效应管 高压超结N沟道场效应管 大功率中压大电流P/N沟道场效应管 大功率中压大电流N+P沟道场效应管 大功率中压大电流串联半桥驱动双N沟道场效应管 超级沟槽工艺中压大电流N/P沟道场效应管 工业类IGBT Sic（碳化硅）肖特基二极管 GaN(氮化镓) FET管 锂电保护板用MOS管
型号- HM2N60F,HM2N60I,HM4822B,HM20P02D,HM8N02MR,HM3N40R,HM3205,HMS60N10DA,HMS150N04D,HM2N60K,HM3207,HM9435B,HM2N20PR,HM80N06KA,HM90N04D,HM17N10K,HMG40N65FT,HM150N03D,HM50N15D,HM3N40PR,HM75N07K,HMS150N06D,HM4606D,HM2N20MR,HM3710K,HM4310,HM90N07K,HM3401PR,HMS5N90R2,HMS40N65T,HM90N06K,HM20P02Q,HM4302,HM12P04Q,HMS20N70,HMS35N06D,HMS45P06D,HMS35N06Q,HMC6N65Q,HM06N15MR,HM4826A,HM12P06K,HM50N10K,HMS20N80,HMS60N06D,HMS10N15D,HMS15N65F,HM2N65K,HMG40N65AT,HMS60N06Q,HM40N10A,HM20N03K,HM2N65R,HM9N50K,HMS10N50,HM4490B,HM4030D,HMS3N65R,HM18P10K,HM150N03K,HM10N65F,HMS3N65K,HM4828A,HM4354,HM4110,HM3800D,HMS60N08D,HM7002KDM,HM7002KDW,HM4805A,HM25N50F,HM90N02D,HM25N50A,HM3801D,HMS3N65F,HMS150N03D,HM4402A,HM2305PR,HM4402B,HM4620D,HM6N70,HM4886A,HM4402D,HM3N80I,HMS10N50K,HM3N80K,HMS10N50F,HM12N60,HMS5N70R2,HM3N80F,HM12N65,HM5N65K,HM80N04K,HM10N06Q,HM5N65F,HM25SDN03Q,HM80N03A,HM6604D,HM4887B,HM1404B,HM1404C,HMS3N70R2,HM1404D,HM40N15KA,HM3205D,HM3205B,HM4N60I,HMS4444A,HM80N03K,HM2310DR,HMS4444B,HM4N60R,HM4622A,HMS20N80T,HM40N15K,HM4888B,HM4622D,HM3N100F,HM3205K,BSS138SR,HM3N100D,HM8N100A,HM07DP10D,HM3400B,HM3400C,HM3400D,HM3400E,HM3DN10D,HMS20N80D,HM8N100F,HMS20N80F,HM18SDN04D,HM4953,HM20DN04Q,HMS3205,HM3P10MR,HM6N10PR,HM32N20,HM15P06Q,HM1N60R,HM830,HM55N03D,HM20DN04D,HM3401C,HM3401D,HM3401E,HM1N60K,HM30DN02D,HM3401B,HMS17N65,HM3207B,HM6803D,HM3207T,HMS17N65F,HMS25N65F,HM4N65K,HMS17N65D,HM4N65F,HMS8N70,HMS8N65,HM4N65R,HM2310,HM840,HM3401,HM3400,HMS25N65T,HM2301DR,HMS15N80D,HM3407,HM2318,HM2319,HMS5N65K,HM5N20R,HM2309APR,HMS5N65F,HM2319D,HM16N50F,HMS5N65R,HMS80N10D,HM10N70,HMS80N10A,HM20P04Q,HMS135N04D,HM4963,HM2301,HM2300,HM9N90F,HM2302,HM2305,HM9N90A,HM10N65,HM4953B,HM2318D,HM3N120F,HM10N60,HM3N120A,HM3422,HMS135N03D,HM6804D,HM8N60,HM4821A,HMS3205K,HM4409A,HM4402CE,HM70N80B,HM8N65,HM70N80A,HMS3205D,HM2301BKR,HM3414,HM100N06D,HM01N100PR,HMS11N70K,HM603K,HM30P10,HMS11N70Q,HM85N02K,HM2818D,HM640,HMS11N70F,HMS18N80F,HM2907,HM20N50F,HM30SDN02D,HM8205,HM2819D,HM40N20,HM06DP10Q,HM20N06KA,HM1607,HM250N03,BSS138KR,BSS123DM,HM605K,HM4N70,HMS21N65D,HM8N20K,HM6604DB,HMS21N65F,HM8N20A,HMS21N65T,HM4421B,HM4421C,HM100N06,HM4421A,HM100N03,HM100N02,HM4N60,HM4N65,HMS85P06,HM4468T,HM15N25,HM30N10,HM3808,HM607K,HM18N50F,HMS4354,HM30N04Q,HM30P55,HM12N20D,HM2301BSR,HM2N15PR,HM18N50A,HM13N25A,HM4421F,HM45N02Q,HM4421D,HM60N75K,HM2P15R,HMS80N06D,HM5N60I,HM5N60K,HM25P15K,HM25P15D,HM30N04D,HM4640D,HMS80N10KA,HM4884A,HM609K,HM30N02Q,HMS5N90K,HM85P02K,HMS5N90F,HM70P03K,HMS5N90R,HM13N50,HM20N50A,HM40DN04K,HM30N03K,HM100N03K,HM1404,HM3207BD,HM2301KR,HM100N03D,HM45N02D,HM4885A,HM100P03,HM4884Q,HM30N02D,HM30N02K,HM100N02K,HM5N06APR,HM20N06,HM70N75,HM4260,HM5P15D,HMS20N65D8,HM45P02D,HM60N20,HMS10N80,HM2810D,HMN9N65Q,HM4P10D,HM50N06KA,HM70N80,HM4485,HMN9N65D,HM4484,HM70N88,HM4489,HM25N60A,HM4P10R,HM4487,HM30P02K,HM7N80F,HM730F,HM2N10B,HM2N10C,HMS3N70,HM50N08,HM3N150,BSS84,HM10N60F,HMS50N06K,HMC8N65Q,BSS138DM,HM4485A,HM45N06D,HM40P04,HM4030,HM4264,HM6604BWKR,HMS4030D,HM15N25K,HM4486A,HM2DP10D,HM4110T,HM4P15Q,HM50N20,HM4P10PR,BSS138DW,HM4485E,HM100P03K,HM4485C,HM4485B,HMS65N03Q,HM840F,HM4487B,HM4487A,HMS3N65,HM1N60PR,HM2N60,HM15N02Q,HM2310PR,HM7002KR,HMS5N65R2,HM08SDN10Q,HM8820E,HM4488B,HM10N80F,HM3N50PR,HMS1N65S,HM35P03KA,HM10N80A,HM45P02Q,HM30P03Q,HM8N65K,HMS50N03Q,HM20N06IA,HM8N65F,HMS8N70F,HM3401DR,HM4440A,HMS8N70K,HM45P03K,HM9N20K,HM3400KR,HM4616D,HM5P55R,HM16N65F,BSS84DM,HM4616A,HM10N10Q,HM4412,HMS40N10KA,BSS84DW,HM10N10K,HM4615Q,HMS3N70K,HM75N06KA,HMS3N70F,HM3636K,HM4885,HM4884,HM50N03K,HM60P06K,HM4889,HMS3N70R,HM4887,HM4404,HM4409,HM4407,HM4616Q,HM2302F,HM2302D,HM60P06,HM2302E,HM2302B,HM80N15,HM4618A,HM3N30R,HM4618D,HMS190N04D,HM35P03D,HM35P03K,HM4435,HM4438,HM50P35DE,HM10DP06D,HMS15N70F,HM4437,HM5N15Q,HM2N50R,HM2301E,HM4N10D,HM40N20D,HM2301C,HM2301D,HM2301B,HM7002K,HM40N10KA,HMS18N10Q,HMS200N03D,HM6602,HM4618Q,HMS18N10D,HM6604,HM70N75D,HM120N04,HM2300B,HM120N03,HMS5N80,HM110N03D,HMS5N70,HM35N03D,HM4453,HM4450,HM8205D,HM80N70,HM3N30PR,HM10SDN06D,HM5P55PR,HM25N65A,HM3N100,HM100P35KE,HMS5N90,HM4441,HM20N15K,HM10SDN06Q,HM4443,HM1P10MR,HM4449,HM4447,HM20N15D,HM4260A,HM60N06,HM60N05,HM60N08,HMS40N10D,HMS15N50F,HM60N02,HM60N04,HMS65N65T,HM60N03,HMS80N85D,HMS125N10D,HM4240,HMS21N65,HM4480,HM50P06,HMS21N70,HM50P03,HM50P02,HM9926,HMS15N50K,HM2N65PR,HM6P15K,HM35N03Q,HM02P30R,HM0565MR,HM8205A,HM6400,HM2318APR,HMS5N65,HM6401,HM3N120,HM6408,HMS40N10A,HM6409,HM75N80,HM10DN06D,HM13P10K,HMS10DN08Q,HM10DN06Q,HM25N06D,HM60N03D,HM6N10R,HM13N30,HM2302BKR,HM4812,HM4813,HM60N03K,HMS4438,HMS85N08K,HM2302KR,HM100N20T,HM70P04K,HM2N50PR,HMS16N70,HM150N03,HM60N04K,HM3710,HM4805,HM4803,HM7N60,HM18N40F,HMS5N70F,HM3N70I,HM18N40A,HM3N70K,HM18DP03Q,HMS5N70K,HM4830,HM18DP03D,HM60N05K,HM45P03,HMS5N70R,HM180N02D,HM3N10PR,HM180N02K,HM25N03Q,HM10P10Q,HM2300DR,HM4853C,HM10P10D,HM40N04K,HMS21N70F,HM4853A,HM4611D,HM4853B,HM2309C,HM40N04D,HM2309A,HM2309B,HM25N03D,HMS21N70A,HM60N06K,HMS100N04D,HMG20N65,HM4821,HM4826,HM7N80,HMS6N10PR,BSS123,HM4830A,HM10N15D,HM9N20,HM4611Q,HMS60N10D,HM25P15,HM4853,HM4611,
采用TO-220塑料封装的IRF740 N沟道MOSFET
描述- 本资料介绍了IRF740 N沟道MOS场效应管的特性、参数和应用。该器件具有低栅电荷、低反馈电容和快速开关速度等特点，适用于高效DC/DC转换器和开关电源。
型号- IRF740
BRI740 N 沟道 MOS 场效应管 DATA SHEET (BRI740 N-CHANNEL MOSFET DATA SHEET)
描述- 本数据手册详细介绍了BRI740型号的N沟道MOS场效应管，包括其特性、应用、电性能参数、外形尺寸、标记说明、焊接温度曲线和包装规格等。
型号- BRI740
【产品】500V N沟道功率MOSFET，大功率开关电源的理想选择
日本新电元公司推出的高性能N沟道金属氧化物半导体场效应管——P10F50HP2/P13F50HP2/P15F50HP2/P20F50HP2，性能稳定可靠，是设计中大功率开关电源的理想选择。具有高电压、低导通电阻、高切换速度，高雪崩耐久性，高di/dt耐久性等优点。广泛使用于继电器驱动，高速脉冲放大器，驱动器等应用。
【产品】TO-220塑封封装N沟道场效应管BRCS3710BRA，适用于高效DC/DC转换和功率开关
蓝箭电子推出的TO-220塑封封装N沟道场效应管BRCS3710BRA，具有阻抗低，开关速度快的特征。该器件适用于高效DC/DC转换和功率开关，其VDSS值100V，ID(Tc=25℃)值为50A，Tj和Tstg温度范围为-55～150℃。
【产品】TO-263塑封封装N沟道MOS场效应管BRB80N08A，适用于高功率DC/DC转换和功率开关
蓝箭电子推出的TO-263塑封封装N沟道MOS场效应管BRB80N08A，具有低栅电荷,低反馈电容,开关速度快的特征。该器件适用于高功率DC/DC转换和功率开关，其VDSS值80V。
【产品】TO-252塑封封装N沟道场效应管BRCS016N03DP，门电荷低，适用于低压电路
蓝箭电子推出的TO-252塑封封装N沟道场效应管BRCS016N03DP，具有RDS(on)小，门电荷低，Crss小，开关速度快的特征。该器件适用于低压电路如：汽车电路、DC/DC转换、便携式产品的电源高效转换。
【产品】PDFN5×6封装的无卤N沟道场效应管BRCS060N04SZC，Tj温度范围-55～150℃
蓝箭电子推出的PDFN5×6封装N沟道场效应管BRCS060N04SZC，具有低电阻可最大地降低导电损耗、低栅极电荷、可实现快速切换，低热阻的特征。VDS值40V，ID值为30A，Tj和Tstg温度范围为-55～150℃，无卤。
【产品】30V/150A的N沟道MOS场效应管BRD100N03，采用TO-252塑封封装
蓝箭电子推出的N沟道MOS场效应管BRD100N03，采用TO-252塑封封装。该产品具有低栅电荷，低反馈电容，开关速度快，是一种无卤产品。其VDSS值为30V，VGSS值为±20V，BRD100N03可用于高功率DC/DC转换和功率开关。
【产品】TO-220F塑封封装N沟道MOS场效应管BRCS65R190FAG，具有650V超结功率场效应管
蓝箭电子推出的TO-220F塑封封装N沟道MOS场效应管BRCS65R190FAG，具有650V超结功率场效应管，RDS(on)×Qg很低，100%雪崩测试的特征。该器件适用于开关电源、不间断电源、功率因数校正等，其VDSS值650V，ID值为20A。
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可定制单位/双位/三位/四位LED数码管的尺寸/位数/发光颜色等性能参数，每段亮度0.8~30mcd，主波长470~640nm，电压2~10.2V。
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