掌握核心的SiC功率器件设计,独立自主开发世界一流水平的车规级SiC器件公司——NOVUSEM(蓉矽)
![二极管,碳化硅MOSFET,碳化硅二极管,碳化硅MOSFET晶圆](https://www.sekorm.com/front/website/images/sekormContent.jpg)
![二极管,碳化硅MOSFET,碳化硅二极管,碳化硅MOSFET晶圆](https://www.sekorm.com/front/website/images/sekormContent.jpg)
产品亮点:
1200V 75/40/12mΩ NovuSiC® MOSFET
——全面优异的电学性能、鲁棒性、可靠性
荣获中国IC设计成就奖——年度最佳功率器件
Ø短路耐受时间>3μs
Ø栅氧化层长期可靠
Ø低导通电阻,低开关损耗
Ø高雪崩耐量
1200V 10/20/30A NovuSiC® EJBS™
——出色的抗浪涌电流能力和正反向特性
Ø高抗浪涌电流能力:11倍(1200V/20A)
Ø低正向导通压降
Ø低反向漏电流
Ø高结温性能稳定:175℃
MCR®
——更可靠、低损耗的理想硅基二极管
Ø与肖特基相当的低导通压降
Ø极低的反向漏电
Ø低反向恢复损耗
Ø最高30倍抗浪涌电流能力
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型号- BC1D12065,B1D30065HC,B1D16120HC,B1D04065KF,B1D15065K,B2D15065K,BC1M018120,B1D03120E,BMF450R08PC4,B2D40065HC,BC1D06065,BMS600R12HWC4,B1D10065K,B1D10065H,B1D10065E,B1D10065F,B2D20065TF,BMF400R12MCC4,BC1D05120,BMF600R12PC4,B1M018120HK,B1D12065K,B1D06065KF,B1M018120HC,B2D30120HC1,BC1D02120,BMS400R12HWC4,B1D06065KS,B2D20065K,B1D20065K,B1D16065HC,B2D20065F,B2D20065H,BC1D08065,B1D05120E,B1D20065HC,B1D05120K,B1M160120HC,B2D08065KS,BMF600R12MCC4,B1D08065K,B2D08065K,BMS700R08HWC4,B1D08065E,B1D10120HC,B1D02120E,BC1D10120,B1M032120HK,B1D08065F,B2D10065KS,BC1D02065,B1D02120K,B1D40120HC,B2D04065K1,B1D20120K,B2D20120HC,B1D20120H,B1M080120HC,B1D10065KF,B1D06065K,B1D08065KS,B1M080120HK,BMF400R12PC4,B1D06065F,BMF700R08PC4,B1D04065E,BC1D15120,B1D06065E,1CD0214T17-XXYY,B1D04065K,BC1D20065,BMS450R08HWC4,B1D08065KF,BC1M032120,BC1M080120,B1D02065E,BC1D10065,B2D20120HC1,B1D10065KS,B1D20120HC,B1D02065K,BC1D04065,B2D06065Q,B2D06065K,B2D10065Q,B2D04065D,B1D10120K,BC1D15065,B2D06065E,B2D10065K,B1D30120HC,B1D10120H,B1D10120E,B2D10065F,B1M032120HC,B2D10065K1,BC1D20120,B2D04065V,BC1M160120
碳化硅功率器件 · 门极驱动芯片产品选型指南
型号- B2D05120E1,B2M1000170Z,B2M1000170R,BTD5350SBPR,BTL27523R,B2M080120Z,BMS600R12HLWC4_B01,B3D40120HC,B2D40065H1,BGH75N65HS1,BD2M040A120S1,B2M080120R,BGH75N65ZF1,B2D,B2D60120H1,BMS800R12HWC4_B02,BMS950R08HLWC4_B02,BTL27523B,B2M080120H,B2D16120HC1,B3D03120E,BGH40N120HS1,B2DM060065N1,BTD5350E,BTD5350SBWR,BTD5350EBPR,B3D系列,BTD21520M,BTL27524R,B2D30120H1,BTD21520E,BTD5350MBPR,BD2D20A120S1,BD2D40A120S1,B3D,BTL27524BR,BTL27524B,B2D02120K1,BTD21520S,BMF800R12FC4,BTL2752X,AB2M040120Z,BD2D10A065S1,B2M040120H,BTD25350MMCWR,BTD21520系列,BTD3011R,BTD21520MBWR,B2D10120E1,AB2M040120R,BTD5350SCPR,BMF240R12E2G3,BMF600R12FC4,BMS700R08HWC4_B01,BTD21520EBWR,B2D08065K1,B2M032120Y,BTD25350MECWR,BTD5350EBWR,B2D30120HC1,B2D40120HC1,BD2D04A065S1,B2D10065F1,B2M040120Z,B2M009120Y,BD2M065A120S1,BD2D02A120S1,BMF700R08FC4,B2D系列,B1D06065KS,B2D40120H1,B2M040120R,BMS950R08HWC4_B02,BGH50N65HS1,BGH50N65ZF1,B2D10065KF1,B2D04065E1,BTD5350,BTD5350SCWR,B3D40200H,BTD5350ECPR,BTD5350M,BTD5350MBWR,BTD21520MBPR,BTD5350S,B2D08065KS,BD2D30A120S1,BTD5350MCPR,B2D20065F1,BD2D08A120S1,B2M1000170H,BTL27523BR,BMS800R12HLWC4_B02,BD2D15A065S1,BD2D20A065S1,B2D20120H1,B2M160120Z,BTD25350MMBWR,B2D10120K1,BTD21520MAWR,B2D20065HC1,B2D30065HC1,BTD25350,B2M160120R,BTD21520EAWR,B2D40065HC1,BMS700R08HLWC4_B01,BTD5350ECWR,BTD25350MEBWR,B2D04065KF1,BGH75N65HF1,B2D10065KS,BTD21520EBPR,BMZ200R12TC4,BTD21520SBWR,B2D04065K1,B3D20120H,BMS600R12HWC4_B01,B2M160120H,BGH75N120HF1,B2M030120R,BD2D08A065S1,BTD25350系列,B2M011120HK,BTD21520SBPR,BTD3011R系列,BTD21520MAPR,B2M030120Z,B2M009120N,BTD5350MCWR,B2D06065K1,BTD5350系列,BMZ250R08TC4,B2M012120N,B3D50120H2,BTD25350MSCWR,BTL2752X系列,B2D20065H1,B2D10065E1,B2M030120H,BD2D30A065S1,B2D06065KF1,B2D05120K1,B2D02120E1,B2D06065E1,BMF950R08FC4,BD2D05A120S1,BGH50N65HF1,B2D20120F1,BD2D15A120S1,B2D20120HC1,B2D10120HC1,BTD21520EAPR,BTD25350ME,BTD21520SAWR,BTD21520,B2D20065K1,B2M018120Z,BTD25350MM,BTD25350MS,B2D16065HC1,AB2M080120R,B2D10120H1,B2M018120N,BD2D06A065S1,B2D30065H1,B2M065120Z,BTD21520SAPR,AB2M080120H,B2M065120R,B2M018120H,B2M065120H,BD2D10A120S1,BTL27523,B2D10065K1,AB2M080120Z,BTD25350MSBWR,B2M020120Y,BTL27524,B3D05120E,B2DM100120N1,BD2D40A065S1
【视频】蓉矽高可靠性SiC功率器件在光储充与新能源汽车上的应用
型号- NCD30S40TTD,NC1M120C12HT,NC1M120C12W,NC1D120C10AT,NCD30S20TTD,NC1D120C20KT,NC1D120C30KT,NC1M120C40HT,NC1M120C75HT
世强硬创获蓉矽授权,代理车规级碳化硅MOSFET/EJBS/二极管等产品
蓉矽SiC MOSFET系列是采用第三代宽禁带半导体碳化硅制造的一种高耐压、低电阻、高频应用的MOSFET,分有高性价比的NovuSiC®和高可靠性的DuraSiC®系列。
签约新闻 发布时间 : 2023-09-06
时科Q-SSC20120-T碳化硅肖特基二极管全应用解析:光伏逆变器、开关电源和新能源汽车充电桩
碳化硅肖特基二极管(SiC Schottky Diode)在现代电子设备中扮演着重要角色,尤其在高功率、高频和高温应用中表现尤为突出。本文中小编将带你探讨时科Q-SSC20120-T碳化硅肖特基二极管在实际中的典型应用,包括光伏逆变器、开关电源和新能源汽车充电桩。
应用方案 发布时间 : 2024-07-23
【应用】SiC器件可在5G基建、新能源汽车充电桩、工业互联网等领域中提高电能利用率
碳化硅(SiC)材料是功率半导体行业主要进步发展方向,用于制作功率器件,可显着提高电能利用率。可预见的未来内,新能源汽车是碳化硅功率器件的主要应用场景。特斯拉作为技术先驱,已率先在Model 3中集成全碳化硅模块,其他一线车企亦皆计划扩大碳化硅的应用。
应用方案 发布时间 : 2023-08-04
SiC模块先进DTS+Cu Bonding工艺,解决车规可靠性最后一块拼图?
半导体技术的进步,特别是碳化硅,产生了具有高功率密度的器件,并允许器件在明显更高的结温度下运行。互连技术在设备和组件的不间断运行中起着重要的作用。以DTS技术和铜线键合的功率模块,可作为新一代基于碳化硅的高功率模块提供有效的技术支持。
技术探讨 发布时间 : 2024-07-23
【选型】捷捷微电推出专为光伏逆变器设计的光耦产品,可实现输入输出的完全电器隔离
江苏捷捷微电子股份有限公司是一家专业从事半导体分立器件、电力电子元器件研发、制造和销售的江苏省高新技术企业,同时也是国内生产“方片式”单、双向可控硅最早及品种最齐全的厂家之一。本文主要介绍江苏捷捷微电子产品在光伏逆变器应用方案,详细内容如下。
器件选型 发布时间 : 2023-01-18
【元件】基本半导体新推出Pcore™2汽车级DCM碳化硅MOSFET模块,工作结温高达175℃
汽车级DCM碳化硅MOSFET系列模块PcoreTM2是基本半导体专为新能源汽车主驱逆变器应用设计的一款高功率密度的碳化硅功率模块。产品具有低动态损耗、低导通电阻、高阻断电压、高电流密度、高可靠性等特点,可支持连续运行峰值结温至175℃,以及具备650Arms以上连续峰值相电流输出。
产品 发布时间 : 2023-11-27
电子商城
品牌:NOVUSEM
品类:Enhanced Junction Barrier Schottky Diode
价格:¥5.4320
现货: 50
品牌:NOVUSEM
品类:Enhanced Junction Barrier Schottky Diode
价格:¥6.5000
现货: 50
品牌:NOVUSEM
品类:Enhanced Junction Barrier Schottky Diode
价格:¥10.6250
现货: 50
品牌:NOVUSEM
品类:Enhanced Junction Barrier Schottky Diode
价格:¥12.6000
现货: 50
品牌:NOVUSEM
品类:Enhanced Junction Barrier Schottky Diode
价格:¥15.7500
现货: 50
品牌:NOVUSEM
品类:SiC EJBS™ SiC Schottky Diode Bare die
价格:¥6.3000
现货: 5
品牌:NOVUSEM
品类:SiC EJBS™ SiC Schottky Diode Bare die
价格:¥18.2000
现货: 5
品牌:NOVUSEM
品类:SiC EJBS™ SiC Schottky Diode Bare die
价格:¥12.6000
现货: 5
品牌:NOVUSEM
品类:Enhanced Junction Barrier Schottky Diode
价格:¥10.3320
现货: 0
现货市场
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可定制LAMP LED、 CHIP LED、 PLCC LED、 汽车用车规级LED、COB LED的尺寸/电压/电流等参数,电压1.5-37V,电流5-150mA,波长470-940nm。
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可定制单色光灯珠、双色灯珠、全彩灯珠、发光二极管、贴片灯珠、贴片LED等产品,尺寸:0.6*0.3mm-3.2*2.7mm,波长:405-940nm,亮度:24-750mcd,电压:1.5-3.5V。
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