JieJie Microelectronics launched its 150V SGT MOSFET to Boost Applications in 5G Communication, BLDC, BMS, etc.
JieJie Microelectronics launched its new 150V series N-channel JSFET® packaged with TO-220-3L, TO-247-3L, and TO-263-3L, of which the excellent thermal conductivity helps reduce hot spots and improve reliability; this series is designed to meet the requirements of such applications as 5G communication power supply, active Ethernet (PoE++) supply-side power supply, energy storage battery pack power management (BMS) optimizer and brushless motor drive (BLDC) for ultra-high power density and energy efficiency. The device is equipped with an all-copper frame inside and can handle 185A current. When VGS=10V, the TO-263-3L packaged JMSH1504AE's standard impedance is as low as 3.9mΩ, which is comparable to similar products of international leading semiconductor IDM manufacturers.
The new JMSH1504 series of power devices are available in plug-in and SMD packages, which facilitate PCB layout design and placement of electronic components. When compared with comparable competitors in the TO-263 package, this series has great advantages in parameters such as on-impedance, avalanche energy, Miller effect, and output capacitance; moreover, it is designed with favorable linear model/safe operation area (SOA) features, which guarantee it functions safely and reliably at high currents. Fan Jun, Marketing Manager of Power MOSFET Devices at JieJie Microelectronics: "In response to China's big push for 5G infrastructure, more and more intelligent terminals like high-precision positioning modules and portrait recognition sensors are connected to RAN switches via Gigabit Ethernet for signal transmission; besides, they are provided with up to IEEE 802.3bt PoE++ level IV 100W power supply from the PSE power supply equipment module of switch. The ultra-low on-impedance (3.9mΩ) of JMSH1504AE ensures the PSE power supply equipment module in switch guarantees the optimum power conversion efficiency and operating temperature during power supply to up to 24 sets of PoE++ PD terminals."
JMSH1504 series SGT MOSFET meets the requirements of applications in communication, BMS, and BLDC for device robustness and reliability. It is often used in applications such as OR-ing and hot swap for data centers, 5G data switches and security system servers. The extremely low Miller capacitance (6.7pF) and output capacitance (772pF) and the avalanche energy up to 889mJ (EAS) make it possible to conveniently handle the spike voltage that often occurs when the power supply shuts down in high-to-low level subsystems, thereby ensuring long-term stable system operation.
The JMSH1504 series SGT MOSFET is in mass production, and samples are available from JieJie Microelectronics' Sales Department, contract agents, or related business channels.
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【产品】捷捷微电新款150V系列N沟道JSFET,适合5G通信、BLDC、BMS等热门领域
捷捷微电推出新款150V系列N沟道JSFET, 采用TO-220-3L、TO-247-3L及TO-263-3L封装,超优的热导性能減少热点,提升可靠性;符合5G通信电源及有源以太网供应端电源、BMS、BLDC等应用对超高功率密度和能效的需求。
捷捷微电MOS选型表
捷捷微电提供以下技术参数的MOS选型,VDS_Max:-100V~1000V,VGS(th)_Typ:-2V~3.5V等
产品型号
|
品类
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Confi-guration
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VDS_Max(V)
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ID_Max(A)
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VGS(th)_Typ(V)
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RDS(ON)_Typ@VGS =10V(mΩ)
|
RDS(ON)_Max@VGS=10V(mΩ)
|
RDS(ON)_Typ@VGS=4.5V(mΩ)
|
RDS(ON)_Max@VGS=4.5V(mΩ)
|
VGS_Max(V)
|
EAS_Max(mJ)
|
Ciss_Typ(pF)
|
Coss_Typ(pF)
|
Crss_Typ(pF)
|
Qg_Typ(nC)
|
MPQ
|
MOQ
|
封装
|
JMSL040SAGQ
|
MOS
|
N
|
40V
|
387A
|
1.5V
|
0.58mΩ
|
0.75mΩ
|
0.8mΩ
|
0.99mΩ
|
±20V
|
506mJ
|
7654pF
|
3738pF
|
44pF
|
114nC
|
3000
|
30000
|
PDFN5x6-8L
|
选型表 - 捷捷微电 立即选型
【产品】捷捷微电推出车规级JSFET® SGT MOSFET,适合车载前装及后装等各类中低压应用
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32 Auto-grade 40~150V SGT MOSFET from JieJie MicroelectronicsIncreasingly Found Homes in Automobiles
These 40 ~ 150V SGT MOSFETs are well suited for applications inside automobiles. Their long-term reliability was tested per AEC-Q101 quality standards. JMSL0406AGQ and its dual-die variant JMSL0406AGDQ are popular in the body control modules (BCM) for use cases like low-power DC motor driving.
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可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。
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