【应用】峰值电流5A的双通道高速低压侧栅极驱动器SGM48524助力充电桩模块设计,电源电压范围为4.5~18V
随着电动汽车的快速发展,人们对电动汽车的续航时间要求越来越高。提升续航时间一方面是增加电池容量,另一方面需要缩短充电时间。从最开始的一个小时,到30min,再到8min@60度。缩短充电时间主要从三点出发:第一增加充电电压目前已经从常见的500VDC发展到了1000VDC,第二是增加充电电流,目前功率从40KW到120KW再到360KW发展。第三就是提升充电效率,方法就是使用损耗更低的SiC器件,下图为直流充电模块的基本框图:
本文重点介绍在PFC及DCDC电路中应用的非隔离驱动,搭配隔离光耦组成隔离驱动。该隔离驱动芯片-圣邦微SGM48524可以驱动PFC电路中的IGBT、DCDC电路中的SJMO,同时隔离功率端的高压及DSP的小信号。
1、宽电源电压范围:4.5V至18V,有更宽的设计余量,适合多种设计需求;
2、传输延时短18ns(典型值),7ns(典型值)快速上升下降时间,利于MOS并行驱动应用;
3、5A峰值驱动电流,可以高效安全地驱动MOSFET,驱动能力更强;
4、热关机保、欠压锁定、短路保护,安全可靠性高;
3、-40℃至+125℃工作温度范围,满足工业用途;
4、SOIC-8、TDFN-3×3-8L和MSOP-8(外露焊盘)封装。
双通道高速低压侧栅极驱动器SGM48524适用于充电桩模块、DC-DC转换器、电机驱动控制、UPS、太阳能等领域,如有需求可在世强平台申请样品测试评估。
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型号- NCA8244-DTSTR,NCA8245-DSWTR,NSI6602,NCA1051,NSI1312,NCA9617,NSI8308X,NCA8244,NSM2017,NSI6611X,NSM2018,NSM2019,NSM2013,NIRS485,NSI6801X,NCA8T245-DTSXR,NSM2015,NSM2016,NSD1624-Q1,NSI6601B,NSM2011,NSI6601C,NSM2012,NSI6651X,NSI6631ASC-DWSR,NSI36XX,NSI6601MB,NSI6801L,NSI6601MC,NSI1306,NSI824X,NSI812X,NSI8308XE,NCA1042,NSI6801T,NSI6801,NSI1305,NCA1043,NSI6622X,NSR35XXX Q1,NSM201X,NSE11409,NSM2020,NSL2163X,NSD8306,NCA8244-Q1TSTR,NSD8308,NCA3491,NSD1025X,NSI8308A,NSI86XX,NSI6651ASC-DWSR,NSI68010,NSI68011,NSI1303X,NSI6851X,NSI66X1X-Q1,NSM2035,NSM2031,NSM2032,NSI6801C,NSM2033,NSIP8308X,NCA8245-DTSTR,NSD1624,NSR31XXX Q1,NSI6801B,NCA8245L-DTSTR,NSI6811,NSD731X,NSIP88XX,NSI1400,NSI6931,NSI82XXC,NSD11416,NSI826X,NCA3485,NCA8541-DTSTR,NSD56008,NSI82XX,NCA8244L-DSWTR,NSM2041,NSI6651ALC-DWSR,NSL2161X,NSI319X,NCA9539,NSI6601X-Q1,NSI6611ASC-DWSR,NSR33XXX Q1,NSI821X,NIRSP31,NSG65N15A,NSD5604,NSD122X,NSI66X1X,NSI6911,NCA9646,NSIP89XX,NCA9645,NCA9648,NCA8244-DSWTR,NSD12409,NCA8245L-DSWTR,NSD2621,NSIP87XX,NSD1015,NSI810X,NSI6601MX,NCA8T245-Q1DTSXR,NCA1042A,NSI823X,NSI6601XM,NSI1311X,NSI6602V,NSD3608,NSI6602HC,NSI6601X,NSI6602HB,NSIP1042,TL432,TL431,NSM2111,NCA84245-DTSXR,NSD1025,NCA82DS44-Q1TSTR,NIRS31,NCA8244L-DTSTR,NSI1200,NSI1042,NSI6611,NCA9306,NCA1145,NSI6602HA,NSI822X,NSI1300X,NCA1021,NCA8244-Q1SWTR,NSI6601WC,NSD262X,NSI6602B,NSI6602C,NSI6602E,NSI1050,NSIP8XX,NSI6602A
SGM DFAE Training Load Switch-OVP-Supervisor
型号- SGM2594CD,SGM48757,SGM48111,SGM8544,SGM853,SGM452,SGM450,SGM2564,SGM2522A,SGM2594BD,SGM812C,SGM2040-3.3,SGM48220,SGM836,SGM61220,SGM8773,SGM2591B,SGM8252,SGM2591C,SGM8770,SGM2591A,SGM4578,SGM2553,SGM2036,SGM2575A,SGM809B,SGM48017,SGM2592AD,SGM803B,SGM2580F,SGM259X 系列,SGM2580G,SGM2580D,SGM2580E,SGM61430,SGM2580K,SGM2580I,SGM2592C,SGM2580B,SGM2580,SGM2580C,SGM2592A,SGM8713A,SGM2592B,SGM2580A,SGM8713B,SGM3157,SGM2576B,SGM2588,SGM66051,SGM2207,SGM802B,SGM25701,SGM61280,SGM40642,SGM25661,SGM2572,SGM7220,SGM2571,SGM485211,SGM4995,SGM2574,SGM2210,SGM8958,SGM2576,SGM706B,SGM2212,SGM25701B,SGM8558,SGM72204,SGM7227,SGM8955,SGM25701A,SGM7229,SGM8956,SGM809,LM2904,SGM2591AD,SGM803,SGM804,SGM2592CD,SGM61135,SGM801,SGM802,SGM40666S,SGM2594A,SGM810,SGM2594B,SGM811,SGM41518,SGM41512,SGM2594C,SGM6602,SGM4027,SGM2521,SGM259X,SGM7200X,SGM2523,SGM2566B,SGM2522,SGM2566C,SGM3699,SGM2525,SGM2578A,SGM2566A,SGM2528A,SGM41511,SGM61020,SGM2592BD,SGM48541,SGM2590,SGM2592,SGM2591,SGM2594,SGM2593,SGM2596,SGM3206,SGM37892,SGM4535,SGM2567A,SGM811C,SGM2594AD,SGM851A,SGM851B,SGM2539,SGM708,SGM829,SGM41542,SGM41543,SGM42633,SGM827,SGM706,SGM828,SGM851C,SGM825,SGM61232,SGM826,SGM48211,SGM2591CD,SGM823,SGM824,SGM2572A,SGM40666AS,SGM2572B,SGM2584A,SGM2572C,SGM431,SGM460141,SGM2528B,SGM2528C,SGM2028,SGM3756,SGM810B,SGM2527,SGM2526,SGM48524D,SGM818,SGM816,SGM25062,SGM814,SGM2591BD,SGM815,SGM812,SGM8270N,SGM821,SGM8967-1,SGM40666BS,SGM8477,SGM41528,SGM8631,SGM708-S,SGM820,SGM708-T,SGM8197,SGM708-R,SGM8750,SGM4066X,SGM708-M,SGM6610,SGM708-L,SGM2531,SGM2521A,SGM2534,SGM708-J,SGM2533
应用笔记 | 纳芯微智能隔离驱动NSI6611的半桥应用和双脉冲测试
纳芯微电子推出的智能高压隔离驱动芯片NSI6611,专为电动汽车电机控制器设计,集成了主动米勒钳位、退饱和检测、欠压保护和软关断等功能,帮助客户打造高性能、高可靠性的电机控制器。本文将从两个层面介绍该产品相关信息:第一部分,NSI6611半桥驱动板;第二部分,基于该驱动板的双脉冲测试。
产品 发布时间 : 2024-10-23
SGMICRO(圣邦微)运算放大器/电压转换器/ADC/驱动器选型指南
描述- 圣邦微电子是由资深半导体设计工程师发起建立的,公司的目标是成长为一家领先的综合性模拟集成电路公司。公司从一开始就确立了以客户需求为中心、以创新迭代方式开发和生产高度可靠性、高度一致性模拟集成电路产品的经营原则,是一家工程师文化主导的公司。
型号- SGM8557H-1AQ,SGM61101Q,SGM61410Q,SGM2079XQ,SGM42203Q,SGM819SXQ,SGM8212-2Q,SGM8752-1Q,SGM61111Q,74AVC4T245Q,SGM431VBQ,SGM61060Q,SGM42403Q,SGM2217Q,SGM42401Q,SGM8197A1Q,74AHC08Q,74AVC8T245Q,SGM48536BQ,SGM8197A3Q,74AHC244Q,SGM823XQ,SGM8197XQ,SGM722Q,SGM48521Q,SGM820XQ,74LVC1G04Q,SGM58031Q,SGM42202Q,SGM42214Q,SGM8212-1Q,74LVC1G32Q,SGM4570Q,SGM8965A-2Q,SGM42402Q,SGM8197A2Q,SGM61330XQ,SGM8197A0Q,SGM721Q,LM431BQ,SGM48522Q,SGM836XQ,74AHC1G08Q,SGM5200Q,SGM48524Q,SGM432BQ,SGM2232XQ
基本半导体(BASIC)碳化硅功率器件选型指南
描述- 深圳基本半导体有限公司是中国第三代半导体行业创新企业,专业从事碳化硅功率器件的研发与产业化。公司总部位于深圳,在北京、上海、无锡、香港以及日本名古屋设有研发中心和制造基地。公司拥有一支国际化的研发团队,核心成员包括二十余位来自清华大学、中国科学院、英国剑桥大学、德国亚琛工业大学、瑞士联邦理工学院等国内外知名高校及研究机构的博士。
型号- B2D05120E1,B2M1000170Z,B2M1000170R,BTD5350SBPR,BTL27523R,B2M080120Z,BMS600R12HLWC4_B01,B3D40120HC,B2D40065H1,BGH75N65HS1,BD2M040A120S1,B2M080120R,BGH75N65ZF1,B2D,B2D60120H1,BMS800R12HWC4_B02,BMS950R08HLWC4_B02,BTL27523B,B2M080120H,B2D16120HC1,B3D03120E,BGH40N120HS1,B2DM060065N1,BTD5350E,BTD5350SBWR,BTD5350EBPR,B3D系列,BTD21520M,BTL27524R,B2D30120H1,BTD21520E,BTD5350MBPR,BD2D20A120S1,BD2D40A120S1,B3D,BTL27524BR,BTL27524B,B2D02120K1,BTD21520S,BMF800R12FC4,BTL2752X,AB2M040120Z,BD2D10A065S1,B2M040120H,BTD25350MMCWR,BTD21520系列,BTD3011R,BTD21520MBWR,B2D10120E1,AB2M040120R,BTD5350SCPR,BMF240R12E2G3,BMF600R12FC4,BMS700R08HWC4_B01,BTD21520EBWR,B2D08065K1,B2M032120Y,BTD25350MECWR,BTD5350EBWR,B2D30120HC1,B2D40120HC1,BD2D04A065S1,B2D10065F1,B2M040120Z,B2M009120Y,BD2M065A120S1,BD2D02A120S1,BMF700R08FC4,B2D系列,B1D06065KS,B2D40120H1,B2M040120R,BMS950R08HWC4_B02,BGH50N65HS1,BGH50N65ZF1,B2D10065KF1,B2D04065E1,BTD5350,BTD5350SCWR,B3D40200H,BTD5350ECPR,BTD5350M,BTD5350MBWR,BTD21520MBPR,BTD5350S,B2D08065KS,BD2D30A120S1,BTD5350MCPR,B2D20065F1,BD2D08A120S1,B2M1000170H,BTL27523BR,BMS800R12HLWC4_B02,BD2D15A065S1,BD2D20A065S1,B2D20120H1,B2M160120Z,BTD25350MMBWR,B2D10120K1,BTD21520MAWR,B2D20065HC1,B2D30065HC1,BTD25350,B2M160120R,BTD21520EAWR,B2D40065HC1,BMS700R08HLWC4_B01,BTD5350ECWR,BTD25350MEBWR,B2D04065KF1,BGH75N65HF1,B2D10065KS,BTD21520EBPR,BMZ200R12TC4,BTD21520SBWR,B2D04065K1,B3D20120H,BMS600R12HWC4_B01,B2M160120H,BGH75N120HF1,B2M030120R,BD2D08A065S1,BTD25350系列,B2M011120HK,BTD21520SBPR,BTD3011R系列,BTD21520MAPR,B2M030120Z,B2M009120N,BTD5350MCWR,B2D06065K1,BTD5350系列,BMZ250R08TC4,B2M012120N,B3D50120H2,BTD25350MSCWR,BTL2752X系列,B2D20065H1,B2D10065E1,B2M030120H,BD2D30A065S1,B2D06065KF1,B2D05120K1,B2D02120E1,B2D06065E1,BMF950R08FC4,BD2D05A120S1,BGH50N65HF1,B2D20120F1,BD2D15A120S1,B2D20120HC1,B2D10120HC1,BTD21520EAPR,BTD25350ME,BTD21520SAWR,BTD21520,B2D20065K1,B2M018120Z,BTD25350MM,BTD25350MS,B2D16065HC1,AB2M080120R,B2D10120H1,B2M018120N,BD2D06A065S1,B2D30065H1,B2M065120Z,BTD21520SAPR,AB2M080120H,B2M065120R,B2M018120H,B2M065120H,BD2D10A120S1,BTL27523,B2D10065K1,AB2M080120Z,BTD25350MSBWR,B2M020120Y,BTL27524,B3D05120E,B2DM100120N1,BD2D40A065S1
SGMICRO栅极驱动器选型表
栅极驱动器,MOS、GAN、IGBT驱动芯片,同相或反相驱动,最大11A驱动电流,ns级别上升下降时间,车规认证。
产品型号
|
品类
|
Features
|
Output PeakCurrent(A)
|
VCC (Min)(V)
|
Rise Time(ns)
|
Fall Time(ns)
|
ICC(mA)
|
Package
|
SGM48002
|
Gate Driver
|
Inverting and Non-Inverting
|
2
|
4.5
|
12
|
13
|
1.19
|
SOIC-8 TDFN-2×2-8L
|
选型表 - SGMICRO 立即选型
碳化硅(SiC)助力光储系统升级,瞻芯电子邀您来探广州光伏展!
2024年8月8日-10日,瞻芯电子将于广交会B馆参加第16届广州国际太阳能光伏储能展,展示最新的1200V-2000V碳化硅(SiC)分立器件和模块产品,以及最新的SiC专用-隔离驱动芯片IVCO141x,欢迎各界朋友莅临10.1馆-S729展位参观,现场有精美小礼相送。
原厂动态 发布时间 : 2024-08-08
【经验】如何解决双高速低压侧栅极驱动器SGM48524的EN引脚配置问题处理?
工程师在使用双高速低压侧栅极驱动器SGM48524中容易忽略EN引脚内部上拉电阻的存在,导致单片机出现死机现象。本文针对该问题进行分析说明。
设计经验 发布时间 : 2023-06-21
华大半导体功率控制事业部
型号- HPD2136,HSA688X,HSA691X,HSA6886-S,HSA3300-Q,HSA6880-S,HSA6880-Q,HSA3300-S,HSA1311-Q,HSA13XX-S,HSA1311-S,HSA5210-S,HSA13XX-Q,HSA5210-Q,HSA5010-S,HSA5010-Q,HSA1306-Q,MPD1101,HSA1308-Q,HSA650X-Q,HSA1306-S,HSA1308-S,HSA650X-S,HSA6880,HSA6881,HSA6210-S,HSA1300-Q,HSA6210-Q,HSA1300-S,HSA691X-S,HSA6110-Q,HSA691X-Q,HSA6110-S,HSA1318-Q,HPD2106,HSA1318-S,HSA6881-S,HSA6881-Q,HSA688X SERIES,HSA6881A,HSA6881B,HSA6881C,HSA6881D,HSA6881E,HSA6881F,HSA9XXX-Q,HSA9XXX-S,HSA3311-Q,MPD1201,HSA3311-S
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提供电机的输出反电势波形测试、驱动芯片输入/输出波形测试服务,帮助您根据具体应用场景来选择适合的电机驱动芯片型号,确保电机驱动芯片能够与其他系统组件协同工作达到最佳效果。支持到场/视频直播测试,资深专家全程指导。
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可定制变压器支持60W-600W范围,额定电流最高10A,漏感稳定度最小3%;支持开关变压器、电流感测变压器、栅极驱动变压器、LLC谐振变压器、PoE变压器等产品定制。SPQ为5K。
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