【产品】应对内存带宽的DRAM CMM，支持CCIX高速串行接口，提供主机加载/存储、低延迟存储器访问

时间： 2022-03-08 来源：SMART

技术问答

1990年以来，DRAM内存一直使用JEDEC定义的并行DDR总线连接到CPU，现在已进入第五代DDR5。为了提高DDR内存速度，服务器中可用内存插槽的数量减少了，但CPU引脚数量没有改变。而CPU中的处理器内核数量稳步增加,导致了性能瓶颈，使每个处理器核心内存带宽逐渐下降。

SMART Modular设计了一种高性能的DRAM CMM（CCIX内存模块），解决了内存带宽问题。CMM使用CCIX高速串行接口，该接口以很少的引脚数提供高速存储器访问。CMM包括领先的Xilinx Versal ACAP FPGA，提供主机加载/存储、低延迟存储器访问。板载FPGA还支持CPU主机卸载和计算加速，从而释放主机CPU用于其他事物处理。

主要特性

•64GB高速缓存一致的DDR4内存

•E1.S外形

•8通道CCIX前端在PCIe-Gen4上以16GBps/通道运行

•带有双核ARM CortexA72处理器的板载FPGA，负责中重度工作负载

•用于固定功能加速的板载四核ARMR5F处理器。

•专用128GB eMMC，可作为存储备份或用于运行应用程序堆栈

•用于加速AI/ML工作负载的硬件引擎

好处

•使用串行接口的低延迟内存扩展可释放DDR插槽

•把计算移动到数据附近。把以数据为中心的算法卸载到FPGA和双核 ARM A72

•通过E1.S热插拔模块实现NUMA内存的动态扩展

•可利用赛灵思提供的特定应用加速库

内存模块应用框图

应用案例

•AI/ML推理加速器

•卸载和加速内存数据库实现并行计算

•用于低成本HDD的存储缓存

•点对点 (P2P) 数据传输，通过在单个内存模块上流水线化每个阶段来实现复杂的算法

产品外形尺寸

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