UMS Newly Launches a 15W GaN Transistor CHK8101-SYC with Low Consumption of 50V@100mA, Used for RF Power Applications
The CHK 8101-SYC is an unmatched 15W GaN transistor for RF power applications up to 6GHz with High performance. It is a broadband solution for a variety of RF power applications such as multipurpose, space, and telecommunication applications.
This DC to 6GHz circuit exhibits a high power above 15W and a remarkable efficiency above 64% and low consumption of 50V @ 100mA. It can be used in pulsed and CW operating modes.
The CHK8101-SYC has been designed on UMS 0.5µm space evaluated proprietary GaN technology. It was the 1st one of a range of space-qualified hermetically packaged power transistors.
Fig.1
Main features
●15W GaN Power Packaged Transistor
●DC to 6GHz
●Pulsed and CW Operating modes
●High Power>15W
●High Efficiency up to 64%
●Gain: 19dB
●Low Consumption: 50V@100mA
●MTTF>106 hours@Tj = 200°C
●Hermetic ceramic-metal flange package
Fig.2
Maximum Gain&Stability Characteristics
Fig.3
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UMS氮化镓（GaN）功率晶体管选型:Glin(dB) @ Freq(GHz):12-23.5，Saturated Power(W)：14-180，Bias(mA)：0.1-1300，Bias(V)：30-50.
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产品型号
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品类
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Glin(dB) @ Freq(GHz)
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Operating Frequency(GHz)
|
Saturated Power(W)
|
PAE(%) @ Freq(GHz)
|
Bias(mA)
|
Bias(V)
|
Case
|
|
CHKA011aSXA
|
氮化镓功率晶体管
|
23.5 @ 0.44
|
Up to 1.5
|
130
|
75 @ 0.44
|
640
|
50
|
Ceramic Metal Flange
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选型表 - UMS 立即选型
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【产品】UMS新推15W GaN晶体管CHK8101-SYC，适用于高达6GHz的高性能射频功率应用
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UMS推出用于机载卫星设备的卫星通信产品，支持客户Ka和Q/V频段定制，转向更高频率和更宽带宽
UMS射频和毫米波低噪声和功率放大器和具有卓越质量和声誉的卫星通信产品。由于我们的空间评估技术和空间级产品认证流程，我们的产品非常适合机载卫星设备。我们支持客户定期在Ka和Q/V频段推出新产品，以支持客户转向更高的频率和更宽的带宽。
UMS GaN POWER TRANSISTOR选型表
UMS提供以下技术参数的GaN POWER TRANSISTOR选型，Saturated Power为14W~140W，Bias为0.1mA~1000mA，Bias为30V~50V。
|
产品型号
|
品类
|
Glin (dB) @ Freq (GHz)
|
Operating Frequency (GHz)
|
Saturated Power (W)
|
PAE (%) @ Freq
|
Bias (mA)
|
Bias (V)
|
Case
|
|
CHKA011aSXA
|
GaN POWER TRANSISTOR
|
23.5 @ 0.44
|
Up to 1.5
|
130
|
75 @ 0.44
|
640
|
50
|
Ceramic Metal Flange
|
选型表 - UMS 立即选型
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