The 150V, 3mΩ EPC2305 and the 200V, 5mΩ EPC2304 GaN FETs offering higher performance and smaller solution size
EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, introduces the 150V, 3mΩ EPC2305 and the 200V, 5mΩ EPC2304 GaN FETs in a thermally enhanced QFN package with exposed top and tiny 3mm x 5mm footprint.
These devices are the lowest on-resistance (RDS(on)) FETs in the market at 150V and 200V in a size that is fifteen times smaller than alternative Si MOSFETs. In addition to offering devices with half the on-resistance and fifteen times smaller, QG, QGD, QOSS are more than three times smaller than Si MOSFETs and the reverse recovery charge (QRR), is zero. These characteristics result in switching losses that are six times smaller in both hard switching and soft switching applications. The driver losses are three times less than silicon solutions and ringing and overshoot are both significantly reduced.
For sinusoidal BLDC motor drives, these devices enable<20ns deadtime and higher frequency to reduce noise, minimize size to allow for integration with the motor, reduce the input filter and eliminate the electrolytic capacitors, and increase motor + driver efficiency more than 8% by eliminating vibrations and distortions. This makes them ideal for forklift, escooter, eMobility, robots, and power tool motor drives.
For DC-DC conversion operating from 80V – 20V, the EPC2304 and EPC2305 enable higher switching frequency and up to five times higher density, and higher efficiency to simplify cooling.
These devices also provide higher efficiency, reduced size and weight, and robust reliability that are required for solar optimizers and microinverters.
The new devices are footprint compatible with the previously released 100V, 1.8mΩ EPC2302, the 100V, 3.8mΩ EPC2306, and the 150V 4.9mΩ EPC2308 for the maximum design flexibility.
The EPC2304 and EPC2305 expand our family of easy to assemble and thermally enhanced QFN packaged devices to 150V and 200V,” said Alex Lidow, EPC’s co-founder and CEO. “Designers can use this family of products for smaller and lighter weight BLDC motor drives, smaller and more efficient DC-DC converters, solar optimizers and microinverters, and higher power density USB chargers and power supplies. The footprint compatibility allows for optimization of performance and cost without redesigning the board.”
The EPC90140 development board is a half bridge featuring the EPC2304 GaN FET and the EPC90143 development board is a half bridge featuring the EPC2305 GaN FET. The purpose of these boards is to simplify the evaluation process and speed time to market. The 2” x 2” (50.8mmx50.8mm) boards are designed for optimal switching performance and contain all critical components for easy evaluation.
Price and Availability
The EPC2304 is priced at $5.25 each in 1 Ku volumes and the EPC2305 is priced at $4.95 each in 1 Ku volumes. The EPC90140 and EPC90143 development boards are priced at $200.00 each. Designers interested in replacing their silicon MOSFETs with a GaN solution can use the EPC GaN Power Bench’s cross-reference tool to find a suggested replacement based on their unique operating conditions.
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本文由玄子转载自EPC News，原文标题为:Lowest On-resistance 150 V and 200 V Transistors on the Market Now Shipping from GaN Leader EPC，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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