UnitedSiC Rediscovers The Perfect Switch with SiC FETs
It's sometimes funny how things improve or worsen depending on your perspective. The perfect switch existed from the day electricity was harnessed – at least 18th-century experimenters such as Volta thought so when they fabricated an electrical isolator out of brass, wood, and porcelain. It had virtually no resistance when closed and no leakage when open. It could withstand as high a voltage as you like depending on how big you made it. It was a problem solved.
Semiconductors were a step back from the ideal
The first electronic switches, vacuum tubes, were large, lossy, and fragile, and early transistors were a further step backward, with high resistance and low breakdown voltage except, of course, you could flip them a lot faster than anything mechanical. They were small but consequently could only handle tiny currents. In the 75 years since Shockley and his team made their discoveries, engineers have worked to get back to Volta's ideal solution, but with pressure at the same time to switch ever faster at MHz rates, keep the small size and increase current rating.
The application that drove the development of transistors to higher power levels was of course the switched-mode power supply, which allowed the possibility of DC-DC power conversion without motor-generator sets and at high efficiency. The SMPS idea was patented in 1959 and bipolar junction transistors were used in the first commercial application in 1970, in the Tektronix 7000-series oscilloscopes. BJTs were successful in the application, but at higher powers were difficult to drive efficiently and switching losses were unacceptable at anything other than a few tens of kHz. Fast and easy-to-drive MOSFETs were patented as early as 1960, but early versions had significant on-resistance, producing high power loss at high currents due to the square term is I2R. A breakthrough, however, was the invention of the IGBT, with the ideal combination of an easy MOSFET gate drive and the on-state characteristics of a BJT, and, to this day, it remains a practical solution for very high-power converters. 'Practical' is not ideal though – to avoid unacceptable dynamic losses in the highest power applications, an IGBT's switching frequency must be kept below about 10KHz, mandating the use of large, heavy, and expensive magnetic components. In the meanwhile, MOSFETs switching at up to around 500kHz have improved to the latest state-of-the-art super-junction types which now dominate the low and medium power ranges of DC-DC and AC-DC conversion.
The approximate application areas of modern power semiconductors
In a bid to close the gap between IGBT and silicon MOSFET application areas, wide band-gap semiconductors have been explored, in silicon carbide and gallium nitride. These promise lower switching and conduction losses, stemming from better electron mobility values and higher dielectric withstand rating of the materials, enabling smaller devices with lower capacitances and conduction channel lengths. Manufacturing switches with the new materials has thrown up many difficulties though, from mismatched thermal expansion coefficients using practical substrates with GaN HEMT cells to lattice defects and basal plane dislocations in SiC MOSFETs, all degrading performance and reducing reliability. Refinements in fabrication continue to improve performance however and the devices, particularly SiC MOSFETs, are now mainstream and are encroaching into the traditional IGBT high-power applications.
Wide band-gap devices are a step back in some ways
In some ways, however, steps back have been taken; SiC MOSFETs and GaN HEMT cells are not as easy to drive as silicon MOSFETs, the required gate voltage levels are critical for optimum performance and reliability, and for SiC, the threshold exhibits wide variation and hysteresis. The reliability of the SiC MOSFET gate oxide has also been questioned and Gan HEMT cells have no avalanche rating, forcing heavy voltage derating. Another retrograde step is the performance of the devices when conducting in reverse by commutation, the automatic reversal of current caused by an inductive load – SiC MOSFETs have a body diode dropping around 4V under forwarding bias and with appreciable reverse recovery loss when subsequently reverse biased. When GaN devices commutate, they conduct through the channel with no reverse recovery issue, but voltage drop is again quite high and varies depending on gate drive.
Looking back to go forwards
A step in the right direction is to look back to an old technique – 'cascading silicon MOSFET and a SiC JFET, dubbed a 'SiC FET' by the manufacturer and technology champion UnitedSiC. It has better figures of merit for overall losses than SiC MOSFETs or GaN HEMT cells, the gate drive is non-critical with a stable threshold, the body diode is fast with low recovery loss and only around a 1.5V drop. Additionally, the devices have robust avalanche and short circuit ratings, independent of gate drive. Devices are available in 650V, 750V, 1200V, and 1700V classes, with on-resistances down to 7 milliohms in a variety of packages, with the majority of parts AEC-Q101 qualified, to allay any possible reliability concerns.
What's more, the challenges created by very fast and high speed switching with these devices can be solved by a simple RC snubber to manage turn-off overshoots and ringing and get the best performance out of these SiC FETs.
Is the perfect switch in view yet? Designers will always want improvements but we are surely very close with SiC FETs.
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本文由董慧转载自UnitedSiC，原文标题为:Rediscovering the perfect switch with SiC FETs，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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The totem-pole PFC stage comes of age with SiC FETs
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Littelfuse（力特）集成电路选型指南
目录- Products overview Solid State Relays Introduction Gate Drivers Introduction High Voltage Isolated Analog Switches/Optocouplers/MOSFETS Introduction Non-Volatile Digitally Programmable Capacitors/High-voltage LED Drivers Introduction Multifunction Products/Voltage Monitoring & Sensing IC Introduction Solid State/Optically Isolated Power Relays Optically Isolated AC Power Switches Gate Drivers & Linear/Standard Optocouplers Depletion Mode MOSFET and Telecommunication/Multifunction Products Global Lab Capabilities
型号- LF2136BTR,LF2113BTR,IXD_614CI,CPC1225N,IAD110P,CPC1019N,IXD_609PI,ITC135P,CPC1335P,CPC3960Z,TS190PL,IAD110,LAA120,LF2113B,LAA127,PAA150,LAA125,CPC1006N,CPC1018N,LF2101N,PAA190S,CPC3720C,PBB190,LBA127P,LCA120LS,LBA127L,LAA110,CPC1114N,CPC1017N,LBA127S,PLB190S,CPC1394GR,LBB120,PAA191S,LF2104N,LBB126,LBB127,CPC2317N,IXD_602D2,IX4340N,LAA100,CPC1125N,CPC1004N,CPC1016N,PBA150S,CPC1394GV,LAA108,CPC1786J,CPC3710C,LBB110,CPC1966BX8,IXD_630MYI,LF2103N,LBA127LS,LCC120,LCA182,LF2388B,PLA192S,XAA170P,TS190LS,XAA170,LF2190NTR,LF2110B,CPC1393GR,CPC7524,PLA110LS,CPC7695Z,PLA193S,CPC1981Y,IXD_604SIA,CPC1002N,LBA120P,CPC1014N,CPC1135N,LBA120S,PAA191,LBA120L,CPC1788J,PAA190,CPC1393GV,PAA193,CPC1510G,IXD_609SI,LF2113,LF2110,LCB710S,LF2136B,TS117PL,CPC1231N,CPC1001N,CPC1025N,CPC1983B,PAA140LS,CPC1777J,LBB127P,CPC3701C,LOC110,XBB170,IXD_630YI,LOC111,LOC112,LBB127S,PLA190S,CPC1511Y,LOC117,PLA191S,LCA110LS,LBA110L,CPC1983Y,CPC1230N,CPC1963GS,CPC7695B,LBA110S,CPC1972G,TS190,LBA110P,PLB171P,LF2304NTR,LBB126P,LBB126S,CPC3714C,FDA217,XAA170S,CPC1984Y,FDA215,TS120S,LF2136,TS120P,LAA100S,LAA100P,CPC1983YE,LCB716S,LAA100L,LAA120LS,LF2304N,LOC11X,XS170,CPC1593G,CPC2125N,OAA160,IAB110P,LAA110PL,CPC1918J,MXHV9910,LCA182S,CPC1330GR,CPC5622A,LCA129,LCA127,LCA125,CPC1510,CPC1511,CPC1906Y,CPC2017N,LCA120,PAA150P,LCA712S,CPC1907B,PAA150S,LAA110S,NCD2400M,LAA110P,XAA117,LF21904N,LAA110L,ITC117L,TS117LS,PS1201,XCB170,LOC112S,ITC117P,LCA110,LF2103,PAA140L,CPC1908J,LF2110BTR,CPC1560GS,PS2401,LOC111S,CPC1596G,LOC112P,CPC1330G,CPC1560G,LCA220,LCA100,PAA140P,LCA710S,LAA120PL,CPC1560S,PAA140S,CPC1909J,LAA120P,CPC5712U,LAA120L,CPC1593GS,LF2106N,CPC1561B,LOC110S,LOC110P,PAA193S,LOC111P,CPC5603C,OAA160S,OAA160P,FDA217S,LCA715S,LCC110P,CPC3980Z,LCC110S,LCC110,LAA120S,IX4310T,CPC3982T,CPC1943GS,FDA215S,XCA170,CPC5602C,LBA120,OMA160S,LBA127,LCC120S,CPC1106N,CPC1009N,CPC1333G,CPC1563G,LCB127,LCB126,LBA110,IAA110P,ITC137P,LCB120,LCA701S,IXD_604D2,LF21814N,LCB717S,CPC1117N,CPC1008N,CPC1540G,CPC3730C,LF2388BTR,LCB111,LCB110,PLA132S,LCB110S,LAA108S,CPC1727J,CPC1945G,CPC40055ST,LAA108P,PLA160,CPC1945Y,IXD_614SI,LF2104NTR,LCA127LS,XBB170S,CPC1580,XBB170P,PAA110L,CPC1966YX8,XAA117P,CPC1966YX6,XAA117S,LBA710S,LF21064N,PLA170,CPC5712,CPC1593,PAA110P,LF2181N,LF21904NTR,CPC1596,PAA110S,CPC1590,LBA716,LAA125PL,LCB120S,LAA100LS,CPC1393G,PLA140,CPC1705Y,PLA143,LBA710,LCA717S,LF2184N,CPC3909C,PLA140LS,PLA143S,CPC1718J,LCB717,LCB716,CPC1333GR,LCB710,CPC1394G,CPC1706Y,PLA150,IXD_602SI,NCD2100,OMA160,IX4351,LBA110PL,IXD_609SIA,CPC3909Z,LCB126S,PBB190S,LF2184NTR,XS170S,LCA210,CPC1540,LF2190N,IX4427N,IXD_609D2,IX4427M,LBA120LS,LF21844N,CPC1708J,IXD_609CI,LAA127S,CPC1563GS,LAA127P,LAA110LS,CPC1540GS,LAA127L,CPC2907B,LCA110S,CPC1926Y,TS190S,TS190P,CPC2025N,PLA132,TS190L,PLA134,IX4428M,CPC1590P,LCA110L,IX4428N,LAA100PL,CPC1927J,PLA110S,CPC1709J,LAA710,IXD_630MCI,CPC1596GS,PLA134S,PLA110L,CPC5621A,LOC117S,LOC117P,CPC1560,CPC3980,CPC2014N,CPC1563,LF2106NTR,IXD_614YI,LAA125S,PS2601,LAA125P,LCB111S,LAA125L,CPC2330N,CPC1916Y,CPC5620A,LCA120S,PLA110,PAA132S,IX4426M,IX4426N,LCA120L,CPC1580P,LCA100LS,PLA160S,IAA110,PLA172P,ITC117PL,LBA110LS,IX4340UE,CPC1035N,CPC1961G,CPC1779J,CPC9909,LCA125S,PM1204S,LCA210S,LF21844NTR,CPC3703C,LCA125L,PAA110PL,LAA710S,LCA210L,CPC1973Y,LBB120S,CPC1010N,LF2101NTR,CPC1986J,CPC1998J,XCB170S,CPC1964BX6,LBB120P,PLA194S,CPC1510GS,PLA170S,CPC1130N,CPC1972GS,PM1206S,CPC1963G,CPC1390GV,LAA127LS,PLB190,LCA220S,CPC1390GR,PLB150S,IXD_604PI,CPC1976YX6,XCA170S,PD2601,LF21814NTR,CPC1020N,CPC1964B,PLA171P,CPC1961GS,IX4351NEAU,LCB127S,CPC1988J,PM1205S,LCA210LS,IBB110,LCA100S,CPC7514,CPC7512,IXD_609YI,LCA100L,LBB110S,LBB110P,CPC1976Y,PLA140S,PLA140L,CPC1965G,ITC135,ITC137,PD1201,CPC1977J,PAA110,TS120,LCA129S,PBB150S,LF21064NTR,LCA125LS,PBB150P,CPC1965Y,PAA110LS,CPC1030N,CPC3902Z,CPC3708Z,CPC1966B,CPC1978J,CPC5622-EVAL-600R,IXD_630CI,PM1206,PM1205,PM1204,PBB150,CPC1966Y,IX4351NE,LF2181NTR,CPC3708C,PLA150S,CPC1150N,PAA127P,LAA127PL,PAA127S,TS118S,PAA140,CPC1967J,TS118P,CPC1979J,CPC1943G,LAA125LS,LCA717,ITC117,LCA715,LCA712,CPC2030N,LCA710,PAA132,PLB150,LCA127L,PBA150,IXD_602PI,IX4340NE,LCA127S,IAB110,IXD_602SIA,TS117S,LBA716S,LF2103NTR,TS117P,CPC1968J,TS117L,PD2401,LCA701,PLA190,PAA127,PLA191,PLA192,PLA193,IBB110P,PLA194,IXD_614PI,CPC1390G,IXD_604SI,CPC1726Y,TS117,TS118
产品目录
型号- 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汽车应用手册
描述- ROHM致力于汽车电子领域，提供高性能、高可靠性的半导体和电子组件。公司采用垂直整合的生产系统，确保产品质量和稳定供应。ROHM的产品涵盖从电阻到半导体、IC和模块的广泛产品线，专注于节能、小型化、安全和安全性。公司还提供设计支持和仿真工具，以优化电路配置和拓扑选择，满足客户的应用需求。
型号- YQ10RSM10SD,BD52W04G-C,PSR SERIES,BD900N1W,BD5310XG-CZSERIES,YQ12RSM10SD,YQ15RSM10SD,SCT4062KW7HR,BR25H020,BR24H64,BD900N1G-C,YQ20BM10SD,BD9XXN1 SERIES,BD933N1,SCT4045DRHR,PSR400,BD5310XG-CZ,BD933N1WG-C,YQ3LAM10D,BD52W01G-C,SCT4026DEHR,SCT4062KRHR,BR25H128,BR25H010,BR25H1M,BR25H256,BD53103G-CZ,RB520ASA-30FH,BD950N1WEFJ-C,RB551ASA-30FH,BD53106G-CZ,BD950N1WG-C,BM2LE160FJ-C,BV1LE080EFJ-C,YQ2LAM10B,SCT4045DEHR,BD54105G-CZ,BR24H01,BR25H320,BM2LE250FJ-C,BR24H02,RGW00TS65CHR,BR24H04,YQ2MM10A,BR25H040,RB751ASA-40FH,BV1LE250EFJ-C,BR25H160,BR24H08,SCT4026DW7HR,YQ40NL10CD,BD52W03G-C,RB520ASA-40FH,SCT4045DW7HR,BD48W00G-C,RGW80TS65CHR,CISPR25,BD7XXL05G-C SERIES,BD53108G-CZ,BD54103G-CZ,BD52W06G-C,RB521ASA-30FH,BR24H512,BR24H256,BD900N1EFJ-C,RB550ASA-30FH,BR24HXXX-5AC,BR25HXXX-5AC SERIES,BD7XXL05G-C,BR24H1M,SMLVN6RGBFU,BD54102G-CZ,BD950N1,BD48HW0G-C,REFLED003-EVK-001,REFLED003-EVK-002,SCT4036KEHR,REFLED003-EVK-003,YQ8RSM10SD,BD9XXN1,REFLED003-EVK-004,YQ5RSM10SD,BR24H128,YQ3MM10B,YQ3RSM10SD,RB886ASAFH,BD53104G-CZ,YQ30NL10CD,BD52W05G-C,YQ SERIES,PSR,BD900N1WEFJ-C,BM2LEXXXFJ-C,YQ30NL10SE,BD733L05G-C,SCT4062KWAHR,BD933N1WEFJ-C,YQ30NL10SD,BD54107G-CZ,BD950N1W,BD725L05G-C,BM2LE040FJ-C,BR24H16,BD933N1W,BD730L05G-C,BD750L05G-C,BD900N1,BD933N1G-C,PSR350,REFRPT001-EVK-001,BD52W02G-C,SCT4036KRHR,BR25HXXX-5AC,BR25H512,BD933N1EFJ-C,BD950N1EFJ-C,BM2LE080FJ-C,BR25H640,BD53105G-CZ,BR24HXXX-5AC SERIES,BR25H080,PSR100,BV1LEXXXEFJ-C SERIES,BD950N1G-C,PSR500,YQ2VWM10B,YQ20NL10CD,LMR1901YG-M,RGW60TS65CHR,BD5410XG-CZ,SCT4062KEHR,BV1LE040EFJ-C,YQ1VWM10A,BD54104G-CZ,YQ60NL10CD,BD900N1WG-C,BD9S402MUF-C,SCT4045DWAHR,YQ20NL10SE,BV1LE160EFJ-C,YQ20NL10SD,BM2LEXXXFJ-C SERIES,BD53107G-CZ,BR24H32,YQ5LAM10C,YQ5LAM10D,YQ5LAM10E,SCT4026DRHR,PSR330,SCT4026DWAHR,BV1LEXXXEFJ-C,BD5410XG-CZ SERIES
UnitedSiC SiC FET/SiC JFET/SiC肖特基二极管选型指南
目录- Product introduction SiC FETs SiC JFETs SiC Schottky Diodes
型号- UJ3D06506TS,UJ3D1220KSD,UF3C065040T3S,UF3C120080K3S,UF3C065040B3,UJ4C075023K3S,UJ3D1210KS,UF3N090350,UF3C SERIES,UJ3C065080B3,UJ3C120040K3S,UJ3N1701K2,UF3N SERIES,UJ3N065025K3S,UJ3N065080K3S,UF3SC120016K3S,UF3C065080K3S,UJ4SC,UF3N170400,UF3C065030K4S,UF3N120140,UF3N065600,UF3N170400B7S,UJ3D06510TS,UJ3D06560KSD,SC SERIES,UJ3C065030B3,UJ3D1210K2,UF3SC065007K4S,UF3C120400K3S,UJ4SC SERIES,UF4C120053K4S,UJ3C120150K3S,UJ4C075060K4S,UJ3D1202TS,UF3C065080B7S,UJ3D1220K2,SC,UF3C065080T3S,UF3C065040K3S,UJ3C120080K3S,UF3SC,UF4C120053K3S,UF3C120080K4S,UF3N090800,UJ4C075018K3S,UJ3D1210TS,UF3SC065030B7S,UJ4C075023K4S,UJ3D06530TS,UJ4C075060K3S,UJ3N SERIES,UJ3N120035,UF4C120070K3S,UF3SC120040B7S,UF3SC120016K4S,UJ4C SERIES,UJ4C075018K4S,UJ3C065080T3S,UF4SC120030K4S,UJ3N120035K3S,UJ3D06504TS,UJ3C065030K3S,UJ3D1205TS,UF3C065080B3,UJ3N065080,UJ4SC075009K4S,UJ3N120070K3S,UJ4C075033K3S,UF3SC SERIES,UF4C120070K4S,UF3C065030T3S,UJ3D06508TS,UJ3D1210KSD,UJ3D06516TS,UJ3D06512TS,UJ3D1250K2,UJ4SC075006K4S,UF3C120040K4S,UF3C065030B3,UF3C120150B7S,UJ3C SERIES,UF3C065040K4S,UJ4C075044K3S,UJ3C065030T3S,UJ4C,UJ3C120070K3S,UF3C065030K3S,UF4C,UJ3D1250K,UJ3D06520TS,UF3SC120009K4S,UF4C SERIES,UJ3N065025,UF3C120080B7S,UF3C120040K3S,UF3C120150K4S,UJ3C065080K3S,UJ3D1725K2,UJ3N120065K3S,UJ3D,UJ4C075044K4S,UJ3C,UJ3D06520KSD,UF3N065300,UF3C,UF3N,UJ3N120070,UJ4SC075011K4S,UJ4C075033K4S,UJ3N,UF3C170400K3S,UF4SC120023K4S,UJ3D SERIES,UF3SC065040B7S,UF3C065080K4S
The 750V Class of UnitedSiC Gen 4 SiC FETS, Responding to Positive Feedback with More Choice
Control engineers want Feedback to be negative with a decent gain and phase margin, but marketeers prefer positive,The 750V Class of UnitedSiC Gen 4 SiC FETS, Responding to Positive Feedback with More Choice.
1200V第4代SiC FET具有业界最佳性能，为高压市场提供最佳SiC电源解决方案
型号- UF4SC120030K4S,UF4C120053K3S,UF4C120030K4S,UF4SC SERIES,UF3C120040K4S,UF4C SERIES,UF4C120070K3S,UF4C,UF4C120070K4S,UF4C120053K4S,UF4SC120023K4S,UF4SC
SiC FETs are enablers for more efficient motor drives and faster charging
EV uptake is set to increase but ‘range anxiety’ and charge times are still barriers to general acceptance. Wide bandgap semiconductors are enablers for more efficient motor drives and faster charging and new SiC FETs are best performers.Current best-in-class devices from UnitedSiC are achieving under 7 milliohms on-resistance in 650V devices and under 10 milliohms for 1200V types that might be used in 480VAC line systems for the highest power chargers.
UnitedSiC (now Qorvo) Announces 1200V Gen 4 SiC FETs with Industry-best Figures of Merit
UnitedSiC announced the new 1200V Gen 4 SiC FETs with industry-leading figures of merit in on-resistance.
sicjfet和共源共栅的稳健性
描述- 本文介绍了碳化硅（SiC）垂直沟槽JFET和级联放大器的性能。文章详细讨论了SiC JFET的短路和雪崩行为，以及其在级联配置中的变化。文章还分析了SiC JFET的导通状态特性，短路电流和雪崩能力，以及级联放大器的结构和工作原理。此外，文章还讨论了SiC JFET和级联放大器在短路和雪崩条件下的行为，以及它们在电路设计中的应用。
UnitedSiC FET用户指南
型号- UJ3C065080T3S,UJ4C075018K4S,UF3C065040T3S,UF3C120080K3S,UF3SC065040D8S,UJ3C065030K3S,UF3SC065030D8S,C1808C681JGGAC7800,UF3C065040B3,UF3C065080B3,UJ4C075023K3S,UJ4SC075009K4S,CRCW201010R0JNEFHP,UJ4C075033K3S,UJ3C065080B3,UJ3C120040K3S,UF3C065030T3S,UF3SC120016K3S,UF3C065080K3S,UJ4SC,UF3C065030K4S,CRCW25124R70JNEGHP,UJ3C065030B3,UF3CXXXYYYK3S,UJ4SC075006K4S,C1206C680JGGAC7800,UF3SC065007K4S,UF3C120040K4S,UF3C065030B3,UF3C120400K3S,UJ4CXXXK3S,UF3C120150B7S,UF3C065040K4S,UJ4C075044K3S,C1206C151JGGAC7800,UJ3C065030T3S,UJ4C,UF3C065030K3S,UJ3C120150K3S,UF3C120400B7S,UJ4C075060K4S,CRCW20104R70JNEFHP,UF3C065080B7S,UF3C170400B7S,UF3CXXXYYYK4S,202R18N101JV4E,SR1206FR-7W4R7L,UF3SC120009K4S,UF3C120080B7S,KTR18EZPF10R0,UF3C065080T3S,UF3C120040K3S,UF3C120150K4S,UF3C065040K3S,UJ3C120080K3S,UJ3C065080K3S,UF3SC,KTR18EZPF4R70,UF3C120080K4S,UJ4C075044K4S,CRCW251210R0JNEGHP,UJ3C,UJ4C075018K3S,UF3C,UF3SC065030B7S,C1206C221JGGAC7800,C1210C331JGGACTU,SR1206FR-7W10RL,UJ4C075023K4S,UJ4C075060K3S,UJ3CXXXYYYK3S,UJ4C075033K4S,UJ4SC075011K4S,UF3C120150K3S,UF3C170400K3S,UF3SC120040B7S,UF3SC065040B7S,UF3SC120016K4S,UF3C065080K4S,202R18N470JV4E
200kW驱动单元逆变器的交流推进功率模块
描述- AC Propulsion公司利用UnitedSiC的1200V SiC FETs开发了200kW驱动单元逆变器，实现了卓越的逆变器效率和成本效益。该逆变器采用专利的SiC功率模块，采用低RDS(on)的SiC FETs，提高了效率，降低了损耗，并实现了更高的开关频率。与IGBT相比，使用UnitedSiC FETs的逆变器在驱动周期效率上提高了3%-5%，有助于增加电动汽车的续航里程。
型号- UF3SC120009K4S
采用最新SiC FET技术的板载充电器性能改进应用笔记
型号- UJ4C075018K4S,UJ4C075044K4S,UJ4C075033K4S,UJ4SC075060B7S,UJ4SC075023B7S,UJ4SC075044B7S,UJ4C075023K4S,UJ4C075060K4S,UJ4SC075033B7S,UJ4SC075018B7S,UJ4C075044B7S,UJ4SC075018K4S
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