EPC Introduces The 40 V, 1.6 Milliohm EPC2069 EGaN® FET, it Can Range From 500 W to 2 KW and Exceed 98% Efficiency
EPC introduces the 40 V, 1.6 milliohm EPC2069 eGaN® FET, offering designers a device that is smaller, more efficient, and more reliable than currently available devices for high performance, space-constrained applications.
EL SEGUNDO, Calif. — September 2021 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2069 (1.6 mΩ typical, 40 V) eGaN FET.
The EPC2069 is ideal for applications with demanding requirements for high power density performance including 48 V – 54 V input servers. Lower gate charges and zero reverse recovery losses enable high frequency operation of 1 MHz, and beyond, at high efficiency in a tiny 10.6 mm2 footprint for state-of-the-art power density. The EPC2069 can support 48V – 12V DC-DC solutions ranging from 500 W to 2 kW and exceed 98% efficiency. The use of eGaN devices in both the primary side and the secondary side are required to achieve maximum power density > 4000 W/in3.
According to Alex Lidow, EPC’s co-founder and CEO, “The EPC2069 is perfectly designed for the secondary side of the LLC DC-DC converter from 40 V – 60 V to 12 V, which is becoming very common for the new 48 V – 54 V input servers required for high density computing applications such as artificial intelligence and gaming. This 40-volt device offers both smaller size and reduced parasitics compared with previous-generation 40 V GaN FETs and at lower cost; thus, offering designers both improved performance and cost savings.”
Development Board
The EPC90139 development board is a 40 V maximum device voltage, 40 A maximum output current, half bridge with onboard gate drives, featuring the EPC2069 eGaN FETs. This 2” x 2” (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the EPC2069. Both the EPC2069 and EPC90139 are available to order from Digi-Key.
About EPC
EPC is the leader in enhancement-mode gallium nitride (eGaN®) based power management. eGaN FETs and integrated circuits provide performance many times greater than the best silicon power MOSFETs in applications such as DC-DC converters, remote sensing technology (lidar), motor drives for eMobility, robotics, and drones, and low cost satellites.
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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
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本文由两斤樱桃转载自EPC，原文标题为:Efficient Power Conversion (EPC) Expands 40 V eGaN FET Product Line with Device Ideal for High Power Density Telecom, Netcom, and Computing Solutions，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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产品型号
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品类
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Configuration
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VDSmax(V)
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VGSmax(V)
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Max RDS(on) (mΩ)
@ 5 VGS
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QG typ(nC)
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QGS typ (nC)
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QGD typ (nC)
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QOSS typ (nC)
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QRR(nC)
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CISS (pF)
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COSS (pF)
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CRSS (pF)
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ID(A)
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Pulsed ID (A)
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Max TJ (°C)
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Package(mm)
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Launch Date
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EPC2040
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Enhancement Mode Power Transistor
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Single
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15
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6
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30
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0.745
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0.23
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0.14
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0.42
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0
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86
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67
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20
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3.4
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28
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150
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BGA 0.85 x 1.2
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Apr, 2017
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