EPC Announces 150 ARMS Motor Drive Reference Design with GaN FETs Provides Best Performance for eMobility, Forklifts, and High-Power Drones
EPC announces the availability of the EPC9186, a 3-phase BLDC motor drive inverter using the EPC2302 eGaN® FET. The EPC9186 supports a wide input DC voltage ranging from 14V to 80V. The high-power capability of the EPC9186 supports applications such as electric scooters, small electric vehicles, agricultural machinery, forklifts, and high-power drones.
The EPC9186 uses four EPC2302 FETs in parallel per switch position and can deliver up to 200 Apk maximum output current. The EPC9186 contains all the necessary critical function circuits to support a complete motor drive inverter including gate drivers, regulated auxiliary power rails for housekeeping supplies, voltage, and temperature sense, accurate current sense, and protection functions. The boards can also be configured for multiphase DC–DC conversion and support both phase and leg shunt current sensing.
Major benefits of a GaN-based motor drive are exhibited with this reference design, including lower distortion for lower acoustic noise, lower current ripple for reduced magnetic loss, lower torque ripple for improved precision, and lower filtering for a lower cost.
EPC provides full demonstration kits, which include interface boards that connect the inverter board to the controller board development tool for fast prototyping that reduce design cycle times.
“GaN-based inverters increase motor efficiency and can increase power capability without increasing size”, said Alex Lidow, CEO of EPC. “This enables motor systems that are smaller, lighter, less noisy, have more torque, more range, and greater precision for a wide range of consumer and industrial applications.”
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本文由玄子转载自EPC News，原文标题为:150 ARMS Motor Drive Reference Design with GaN FETs Provides Best Performance for eMobility, Forklifts, and High-Power Drones，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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EPC eGaN®FET/晶体管选型表
EPC提供增强型氮化镓半桥功率晶体管/增强型功率晶体管/功率晶体管的选型：配置：Dual Common Source、Dual with Sync Boot、Half Bridge、Half Bridge Driver IC、HS FET + Driver + Level Shift、Single、Single - AEC Q101、Single – Rad Hard、Single with Gate Diode、Single with Gate Diode – AEC-Q101、Dual Common Source - AEC Q101，VDS最大值（V）：15~350V；VGS最大值（V）：5.75~7V
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产品型号
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品类
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Configuration
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VDSmax(V)
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VGSmax(V)
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Max RDS(on) (mΩ)
@ 5 VGS
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QG typ(nC)
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QGS typ (nC)
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QGD typ (nC)
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QOSS typ (nC)
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QRR(nC)
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CISS (pF)
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COSS (pF)
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CRSS (pF)
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ID(A)
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Pulsed ID (A)
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Max TJ (°C)
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Package(mm)
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Launch Date
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EPC2040
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Enhancement Mode Power Transistor
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Single
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15
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6
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30
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0.745
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0.23
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0.14
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0.42
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0
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86
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67
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20
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3.4
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28
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150
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BGA 0.85 x 1.2
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Apr, 2017
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选型表 - EPC 立即选型
How2GaN | 如何设计具有最佳布局的eGaN® FET功率级
eGaN FET的开关速度比硅基MOSFET更快，因此需要更仔细地考虑印刷电路板（PCB）布局设计以最小化寄生电感。寄生电感会导致过冲电压更高，同时减慢开关速度。本篇笔记将会探讨使用eGaN FET设计最佳功率级布局的关键步骤，来避免上述不良影响并最大化转换器性能。
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型号- EPC2252
EPC评估套件选型表
EPC提供评估板的选型：Default Configuration：IToF、Resonant Pulse DToF;VBUS (max)(V):12~160V;VINPUT(max)(V):5 V;Tpin(min)(ns):1 ns/2 ns
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产品型号
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品类
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Description
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VIN(V)
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VOUT(V)
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IOUT (A)
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Featured Product
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EPC9163
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评估板
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Synchronous, Buck or Boost, digital controller
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Buck: 20 – 60 V
Boost: 11.3 – 16 V
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Buck: 5 - 16 V
Boost: 20-50 V
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140 A (Buck)
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EPC2218
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选型表 - EPC 立即选型
EPC2121–双向镓氮®功率开关镓氮®FET规格书
描述- 本资料为EPC2121双向eGaN®功率开关的数据表，介绍了该器件的性能参数、特性及应用。EPC2121采用氮化镓技术，具有低导通电阻、高频率切换能力等特点，适用于多种电源转换应用。
型号- EPC2121
EPC2306–增强型功率晶体管eGallium Nitrium®FET数据表
描述- 本资料介绍了EPC2306增强型功率晶体管，一款基于氮化镓（Gallium Nitride）技术的器件。该晶体管具有极低的导通电阻RDS(on)，适用于高频开关应用，同时提供低QG和零QRR，适合于高频率和高效率转换需求。
型号- EPC2306
EPC23101-ePower™Stage IC氮化镓®FET规格书
描述- 该资料介绍了EPC23101 ePowerTM Stage集成电路，这是一种集成了高侧eGaN® FET、内部栅极驱动器和电平转换器的高效功率转换解决方案。该芯片适用于多种转换器拓扑，如降压、升压和升降压转换器，以及半桥、全桥LLC转换器和电机驱动逆变器。它具有低导通电阻、高开关频率和低静态电流等特点，适用于高效率、小型化和易于制造的电源设计。
型号- EPC23101
EPC2901C_55–增强型功率晶体管eGallium Nitrium®FET规格书
描述- 本资料详细介绍了EPC2901C_55型号的eGaN® FET（增强型场效应晶体管）的特性和应用。该器件采用氮化镓技术，具有低导通电阻、高开关频率和低开关损耗，适用于高频DC-DC转换、工业自动化、同步整流和低电感电机驱动等领域。
型号- EPC2901C_55
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