SiC SBD/MOS供应商芯众享授权世强硬创代理,加速国产化替代
![MOS,SiC SBD,SiC MOSFET,GaN HEMT](https://www.sekorm.com/front/website/images/sekormContent.jpg)
![MOS,SiC SBD,SiC MOSFET,GaN HEMT](https://www.sekorm.com/front/website/images/sekormContent.jpg)
研究数据显示,预测从2021至2027年,功率SiC器件市场规模正以34%的CAGR快速增长。到2027年,SiC器件市场增长到60亿美元以上,新能源汽车应用成为SiC市场的最大驱动力。
芯众享(成都)微电子有限公司(下称“芯众享”, 英文名:CORENICS)与世强先进(深圳)科技股份有限公司(下称“世强先进”)签署授权代理分销协议。
双方携手依托全球领先的ToB创新研发及供应服务平台世强硬创,将碳化硅二极管、碳化硅MOSFET、碳化硅功率模块、GaN HEMT、碳化硅肖特基二极管、平面栅碳化硅 MOSFET、平面MOSFET、碳化硅MOSFET等全线产品高效触达至下游终端企业。
据了解,芯众享(CORENICS)是一家集第三代半导体功率器件研发、销售及应用系统于一体的高新技术企业。
当前SiC市场主要被知名国际大厂垄断,在国产化替代进程下,该公司已掌握SBD和平面MOS技术并实现部分产品量产,Trench MOS正加速研发,相继推出了SiC SBD、SiC MOSFET、SiC/IGBT模块、GaN HEMT及GaN合封器件等产品。
其中,SiC SBD可以提供优越的开关性能、低功耗、无反向恢复电流以及优异的热性能。产品广泛用于开关SMPS UPS、光伏逆变器、电源开关电路等。
SiC MOSFET实现了更高的开关频率、更低的开关损耗、低导通电阻和小型芯片尺寸确保了较低的电容和栅极电荷,并实现更高阻断电压和雪崩能力。广泛应用于电源、逆变器、电机驱动等电路设计。
GaN组合器件集成了高压驱动Startup FET、控制器与GaNHEMT,采用DFN8*8封装;最小化PCB面积、搭配方便、最佳性价比。应用于USB电源适配器 、手机快速充电、平板适配器、消费电子等。
GaN E-HEMT增强型硅基氮化镓功率晶体管,氮化镓的特性允许大电流,高电压和高开关频率。应用于电源适配器、LED电源驱动、电池快速充电、家用电器电机驱动、工业电源等。
值得一提的是,通过设计和工艺技术攻关,芯众享(CORENICS)已经突破并掌握了SiC SBD/MOS制备6项关键技术,使得SiC SBD及MOS产品具备更小尺寸、更低成本,性能比肩国际巨头甚至更优。
进入世强硬创平台搜索“芯众享”,即可获取芯众享(CORENICS)旗下全线产品资料、进行小批量/大批量采购,同时还有技术问题、技术支持等服务助力企业研发至量产。截至当前,这些产品在新能源汽车、光伏逆变器、充电桩、通信电源、电子产品快充等领域得到深度应用。
本次协议签订,不仅代表着芯众享(CORENICS)可以提供丰富的系列化产品,可以满足客户对不同产品的需求,也进一步更新了世强硬创的产品库,提供更多100%原厂优质的碳化硅产品。世强硬创凭借自身独特的O2O技术分销模式,将产品以不同的渠道触达更多大中小微硬科技企业,赢得市场口碑。
芯众享(成都)微电子有限公司(简称“芯众享”)是一家集第三代半导体功率器件研发、销售及应用系统于一体的高新技术企业。总部位于四川省成都市高新区,并先后设立了深圳营销中心和泉州应用中心,自公司成立以来,已经组建了一支由海归、博士为核心的研发团队,公司与国内知名企业和科研院校先后展开多项技术合作,并与海内外晶圆代工企业建了立战略合作伙伴关系,相继推出了SiC SBD、SiC MOSFET、SiC/IGBT模块、GaN HEMT及GaN合封器件等产品。公司产品广泛应用于新能源汽车、光伏逆变器、充电桩、通信电源、电子产品快充等领域。 查看更多
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产品 发布时间 : 2024-08-29
基本半导体(BASIC)碳化硅功率器件选型指南(中英文)
描述- 深圳基本半导体有限公司是中国第三代半导体行业领军企业,专业从事碳化硅功率器件的研发与产业化。研发覆盖碳化硅功率器件的材料制备、芯片设计、封装测试、驱动应用等全产业链,推出通过 AEC-Q101 可靠性测试的碳化硅肖特基二极管、通过工业级可靠性测试的 1200V 碳化硅 MOSFET 以及汽车级全碳化硅功率模块等系列产品。Shenzhen BASiC Semiconductor LTD., the leading enterprise of Wide-band Gap semiconductor industry in China.BASiC master the global advanced core technology of SiC. The R&D fields cover the whole industrial chain of SiC power devices.
型号- BC1D12065,B1D30065HC,B1D16120HC,B1D04065KF,B1D15065K,B2D15065K,BC1M018120,B1D03120E,BMF450R08PC4,B2D40065HC,BC1D06065,BMS600R12HWC4,B1D10065K,B1D10065H,B1D10065E,B1D10065F,B2D20065TF,BMF400R12MCC4,BC1D05120,BMF600R12PC4,B1M018120HK,B1D12065K,B1D06065KF,B1M018120HC,B2D30120HC1,BC1D02120,BMS400R12HWC4,B1D06065KS,B2D20065K,B1D20065K,B1D16065HC,B2D20065F,B2D20065H,BC1D08065,B1D05120E,B1D20065HC,B1D05120K,B1M160120HC,B2D08065KS,BMF600R12MCC4,B1D08065K,B2D08065K,BMS700R08HWC4,B1D08065E,B1D10120HC,B1D02120E,BC1D10120,B1M032120HK,B1D08065F,B2D10065KS,BC1D02065,B1D02120K,B1D40120HC,B2D04065K1,B1D20120K,B2D20120HC,B1D20120H,B1M080120HC,B1D10065KF,B1D06065K,B1D08065KS,B1M080120HK,BMF400R12PC4,B1D06065F,BMF700R08PC4,B1D04065E,BC1D15120,B1D06065E,1CD0214T17-XXYY,B1D04065K,BC1D20065,BMS450R08HWC4,B1D08065KF,BC1M032120,BC1M080120,B1D02065E,BC1D10065,B2D20120HC1,B1D10065KS,B1D20120HC,B1D02065K,BC1D04065,B2D06065Q,B2D06065K,B2D10065Q,B2D04065D,B1D10120K,BC1D15065,B2D06065E,B2D10065K,B1D30120HC,B1D10120H,B1D10120E,B2D10065F,B1M032120HC,B2D10065K1,BC1D20120,B2D04065V,BC1M160120
爱仕特(AST)SiC碳化硅芯片及模块选型指南
目录- 公司简介和芯片/模块产品规则 芯片 模块 参数含义和芯片/模块产品可靠性要求介绍
型号- ASC20N650MT3,ASC100N1200MD10,ASC700N1200,ASC800N1200,ASC12N650MT3,ASC100N1700MT3,ASC100N900MT3,ASC100N900MT4,ASC10N1200MT3,ASC5N1700MT3,ASC1000N900,ASC60N650MD8,ASC30N1200MT3,ASC30N1200MT4,ASC100N650MT3,ASC100N650MT4,ASC18N1200MT3,ASC60N1200MT4,ASC60N1200MT3,ASC20N3300MT4,ASC60N650MT3,ASC60N900MT4,ASC60N650MT4,ASC60N900MT3,ASC600N1200,ASC-60-N-650-M-T-4,ASC100N1200,ASC300N1200,ASC60N1200MD8,ASC100N1200MT3,ASC100N1200MT4,ASC8N650MT3,ASC5N1200MT3,ASC1000N1200
碳化硅肖特基二极管、碳化硅MOSFET等碳化硅功率器件用于变频空调等白色家电,具备更高的效率、开关频率
碳化硅技术带来了更高的效率,可以减少空调散热器的尺寸和热管理的成本。同时,更高的开关频率可以降低磁性元件的成本和尺寸,实现更高的功率密度。此外,低电磁干扰特性则可以降低电磁干扰滤波器的成本并解决电磁干扰的研发成本。
应用方案 发布时间 : 2024-08-26
泰科天润(GPT)SiC碳化硅芯片/SiC碳化硅二极管选型指南
目录- Company Profile SiC Chip/SiC Devices
型号- G3S06506D,GW3-S12050,G5S06505DT,G3S06506C,G3S06506A,G4S06508HT,G3S06550A,G5S12020B,G3S17020PP,G3S06510C,G3S06510D,G5S12020A,G3S12020A,G3S06506H,G3S06510A,G4S12020D,G3S12020B,GW1-S3300.6,G3S06510B,G5S12015P,GW3-S065100,G3S06505R,G3S06004J,G3S12003R,G5S06508AT,G5S06504AT,G5S06505CT,G3S06505C,G4S06515HT,G3S06505D,G5S12015A,G3S06505A,G3S12003A,G5S06510HT,G4S06515PT,G3S12003C,G5S12015L,G3S06505H,G3S12003H,G3S06504R,G5S06510PT,G3S06520L,G3S06520H,G5S12002R,GAS06540B,G3S06560B,G3506008J,G3S12002R,G3S06520P,G3S06504C,G3S06504A,G5S06508HT,G3S06516B,G5S06504HT,G3S12002A,G4S06515QT,G3S12002C,G3S06504H,G3S06520B,G3S12002D,G5S12010A,G5S06508PT,G3S06520A,G3S06504D,G3S12002H,G3S06503R,GWA-S06520,G3S06540PP,G3S065100P,G5S06506CT,G4S06508AT,GW3-S17050,G5S06505AT,G3S06503A,GW3-S12020,G3S12040PP,G5S06508QT,G3S06503H,G5S06504QT,G4S06510HT,G3S06503C,G3S06503D,G3S06530L,G5S12020H,GW3-S06550,G4S06510PT,G4S06515AT,G5S12020P,G5S06506DT,G3S06530P,G3S06502R,GW5-S12010,G3S06502A,G4S06510AT,GW3-S12010,G5S06505HT,G3S06502H,G3S17010A,GW5-S12015,G3S06530A,G3S06502D,G3S12040B,G3S06502C,GW3-S06520,G4S06510QT,G4S06508CT,G5S12008A,G5S06506AT,G3S17005P,GW3-S17010,GW5-S12002,G5S06510DT,G4S06515DT,GW3-S12002,GW3-S12003,GW3-S12005,GAS06520A,G3S17005C,GW5-S12008,G3S17005A,G3S12010H,GAS06520H,G3S06508R,G5S12010P,GAS06520D,G3S12010M,G3S17020B,GW3-S06530,G4S06508DT,G3S12010P,GAS06520P,G3S12010R,G3S12050P,GAS06520L,GW3-S33050,G4S06510CT,G5S06506HT,G5S06510AT,G3S06508D,GW3-S17005,G3S06508C,G5S12002C,G3S06508A,G5S12002A,G3S12030PP,G3S06540B,G5S12030B,G3S12010A,G3S12010B,G3S12010C,G3S12010D,G3S06508H,G3S06512B,GW1-S33001,GW1-S33002,G5S06510QT,G3S12005P,GW1-S33005,G3S06006J,G3S12005R,GW3-S06506,GW3-S06508,GW3-S06502,G3S06010J,GW3-S06503,GW3-S06504,G5S06508CT,GW3-S06505,GW5-S12020,G4S06510DT,G3S12005A,G3S17050P,G3S12005C,G3S12005D,G3S12005H,G3S06510M,GW3-S06510,G3S06506U,G3S06506R,G3S06510K,G3S06510L,G3S12020L,G3S06510H,G3S17010B,G3S17010P,G3S12020P,G3S06550P,G3S06510R,G5S06508DT,G3S06510P,G3S12020U
瞻芯电子(InventChip)碳化硅(SiC)功率器件/驱动与控制芯片选型指南
描述- 上海瞻芯电子科技股份有限公司(简称“瞻芯电子”)是一家聚焦于碳化硅 (SiC) 半导体领域的高科技芯片公司,2017 年成立于上海临港,致力于开发碳化硅 (SiC) 功率器件和模块、驱动和控制芯片产品,围绕 SiC 应用,为客户提供一站式芯片解决方案。
型号- IV2Q12040BD,IV1B12009HA2L,IV1D12030BD,IV2Q07014T4Z,IV1Q12050D7Z,IVST12017MA1L,IV2Q12100BD,IV1Q12017T4ZG,IV1Q12160T4Z,IVST12080DA1L,IVCR2405DR,IV2Q12040T4Z,IV1D06020BD,IVCR1412SR,IV2Q12013T6Z,IV2Q06060BD,IV1Q12080T3Z,IV2Q171R0BD,IVCO1A01DQR,IV1Q12750T3,IV2Q12030D7Z,IV1D12015BD,IV2Q07014BA,IV2Q07014BD,IV2Q12160T4Z,IV1D06006F5,IVCO1A01DR,IV1B12013HA1L,IVSM12040HA2Z,IVSM07060HA2Z,IV2Q12200T4Z,IV2Q06060L1,IV1D06010O2,IVCO1A02DWR,IV1Q12030BDG,IV1Q12080T4Z,IV1Q12750BD,IV2Q171R0T3,IVCC1102DR,IV1Q06060BDG,IV2Q12040K1Z,IV1D06020T2,IV3D12060U3,IV1Q12050T3,IV1D12020T2,IV1Q12080BD,IV1Q12050T4,IVST12050SA1L,IVCR2504DR,IV1Q12017BDG,IV1D06006BD,IV1D06004O2,IV1D12020T3,IV1Q06060D7G,IV2Q12160BD,IVCR2402DR,IV2Q12160D7Z,IV2Q06040BD,IV2Q12017BD,IV1D12040U3Z,IVCR1801ASR,IVCO1A02DWQR,IV2B12003HA2L,IV1D06020U3Z,IV1Q06040T4Z,IV2Q12017BA,IV3D12030U3,IV1Q06060T4ZG,IV2Q12013BD,IV2Q12013BA,IV1D12010O2,IVCC1102F4AR,IVCO1412DDWQR,IVST12040DA1L,IV1D06010T2,IVCR1401DR,IV1Q12080T3,IV1D12020BD,IV1D12040U3,IV1D06004P3,IV1Q12080T4,IV3D12015T2,IV2Q12080D7Z,IVCR2404MPQR,IV2Q06025BD,IVTM12080TA1Z,IV2Q06040L1,IV2Q17020T4Z,IV2Q20045BD,IV3B20023BA2,IV3D12030T2,IV2D12002BD,IVCO1A02DQR,IV1D12005BD,IVCC1104F4AR,IV2Q06025T4Z,IV2Q06040T4Z,IV2Q06060O3Z,IV1Q06060T4G,IV1D12040T2,IV2Q12100D7Z,IV2Q171R0D7Z,IV2Q06025L1,IVST12050MA1L,IVST12160DA1L,IVCR2403DR,IV1Q06040BD,IV1Q12160T3,IV1Q12160T4,IV1B12025HC1L,IV1Q12017BAG,IV2Q12200D7Z,IV2Q20045T4,IV2D12020T2,IV2Q12200BD,IV2Q06060T4Z,IV2Q12030T4Z,IV2Q12040D7Z,IV2D12020BD,IV1D12040BD,IV6212004HA2,IV1Q06060T3G,IVCR1407ASR,IV1Q12050BD,IV1Q12017T4G,IV1D12010T2,VSM12080HA2Z,IVCR1402DPQR,IV1D06004F5,IV2B12006HA1L,IVCO1411DDWQR,IV1Q06040T4,IV1Q06040T3,IV1D06010BD,IV1Q12160BD,IV1Q12750O3,IV1Q06040L1,IV1Q12160D7Z,IVCC1104DR,IV2Q12080BD,IV2Q175S0BD,IV2Q06025D7Z,IV6212004HB2,IVSM06025HA2Z,IVST12017SA1L,IV1D12030U3,IV1D20020T2,IV1D06004BD,IV1D06006O2,IV2D12020D2Z,IV2Q06040D7Z,IV2Q12017T4Z,IVCR2404DR,IV2Q06060D7Z,IVCO1A01DWR,IV1Q12030T4G,IV2Q17020BD,IV3D12020T2,IV1D12010BD,IV2D12002P2,IV2Q12030BD,IVST12120DA1L,IV2Q12080T4Z,IV1D06020U3,IVCO1A01DWQR,IV1D12030T2,IVHD122M1TA2Z,IVCO1A02DR,IV1D06006P3,IV1Q12050T4Z,IVCR2404MPR,IV1D12010P2Z,IV2Q12100T4Z,IVCR1401DPR,IV1Q06060L1G,IV2Q12080K1Z,IV1Q12080D7Z,IV2Q171S0BD,IV1D20020BD,IV1D12015T2,IV2D12002O2,IVSM12160HA2Z,IV1D12005O2,IV2Q171S0S1
瞻芯电子荣获“东方芯港·明日之星”奖,致力于打造碳化硅(SiC)功率器件芯片和驱动芯片的产业化
2017年,瞻芯电子在东方“芯”港这片沃土创立,前瞻性地致力于打造碳化硅(SiC)功率器件芯片和驱动芯片的产业化,现已成长为我国少有的碳化硅(SiC)芯片的垂直整合制造(IDM)企业,累计交付核心产品:碳化硅(SiC)MOSFET约900万颗,驱动芯片约4800万颗,广泛应用于新能源汽车、光伏与储能、充电桩、工业和通信电源等领域。
厂牌及品类 发布时间 : 2024-08-24
【视频】蓉矽高可靠性SiC功率器件在光储充与新能源汽车上的应用
型号- NCD30S40TTD,NC1M120C12HT,NC1M120C12W,NC1D120C10AT,NCD30S20TTD,NC1D120C20KT,NC1D120C30KT,NC1M120C40HT,NC1M120C75HT
碳化硅功率器件 · 门极驱动芯片产品选型指南
型号- B2D05120E1,B2M1000170Z,B2M1000170R,BTD5350SBPR,BTL27523R,B2M080120Z,BMS600R12HLWC4_B01,B3D40120HC,B2D40065H1,BGH75N65HS1,BD2M040A120S1,B2M080120R,BGH75N65ZF1,B2D,B2D60120H1,BMS800R12HWC4_B02,BMS950R08HLWC4_B02,BTL27523B,B2M080120H,B2D16120HC1,B3D03120E,BGH40N120HS1,B2DM060065N1,BTD5350E,BTD5350SBWR,BTD5350EBPR,B3D系列,BTD21520M,BTL27524R,B2D30120H1,BTD21520E,BTD5350MBPR,BD2D20A120S1,BD2D40A120S1,B3D,BTL27524BR,BTL27524B,B2D02120K1,BTD21520S,BMF800R12FC4,BTL2752X,AB2M040120Z,BD2D10A065S1,B2M040120H,BTD25350MMCWR,BTD21520系列,BTD3011R,BTD21520MBWR,B2D10120E1,AB2M040120R,BTD5350SCPR,BMF240R12E2G3,BMF600R12FC4,BMS700R08HWC4_B01,BTD21520EBWR,B2D08065K1,B2M032120Y,BTD25350MECWR,BTD5350EBWR,B2D30120HC1,B2D40120HC1,BD2D04A065S1,B2D10065F1,B2M040120Z,B2M009120Y,BD2M065A120S1,BD2D02A120S1,BMF700R08FC4,B2D系列,B1D06065KS,B2D40120H1,B2M040120R,BMS950R08HWC4_B02,BGH50N65HS1,BGH50N65ZF1,B2D10065KF1,B2D04065E1,BTD5350,BTD5350SCWR,B3D40200H,BTD5350ECPR,BTD5350M,BTD5350MBWR,BTD21520MBPR,BTD5350S,B2D08065KS,BD2D30A120S1,BTD5350MCPR,B2D20065F1,BD2D08A120S1,B2M1000170H,BTL27523BR,BMS800R12HLWC4_B02,BD2D15A065S1,BD2D20A065S1,B2D20120H1,B2M160120Z,BTD25350MMBWR,B2D10120K1,BTD21520MAWR,B2D20065HC1,B2D30065HC1,BTD25350,B2M160120R,BTD21520EAWR,B2D40065HC1,BMS700R08HLWC4_B01,BTD5350ECWR,BTD25350MEBWR,B2D04065KF1,BGH75N65HF1,B2D10065KS,BTD21520EBPR,BMZ200R12TC4,BTD21520SBWR,B2D04065K1,B3D20120H,BMS600R12HWC4_B01,B2M160120H,BGH75N120HF1,B2M030120R,BD2D08A065S1,BTD25350系列,B2M011120HK,BTD21520SBPR,BTD3011R系列,BTD21520MAPR,B2M030120Z,B2M009120N,BTD5350MCWR,B2D06065K1,BTD5350系列,BMZ250R08TC4,B2M012120N,B3D50120H2,BTD25350MSCWR,BTL2752X系列,B2D20065H1,B2D10065E1,B2M030120H,BD2D30A065S1,B2D06065KF1,B2D05120K1,B2D02120E1,B2D06065E1,BMF950R08FC4,BD2D05A120S1,BGH50N65HF1,B2D20120F1,BD2D15A120S1,B2D20120HC1,B2D10120HC1,BTD21520EAPR,BTD25350ME,BTD21520SAWR,BTD21520,B2D20065K1,B2M018120Z,BTD25350MM,BTD25350MS,B2D16065HC1,AB2M080120R,B2D10120H1,B2M018120N,BD2D06A065S1,B2D30065H1,B2M065120Z,BTD21520SAPR,AB2M080120H,B2M065120R,B2M018120H,B2M065120H,BD2D10A120S1,BTL27523,B2D10065K1,AB2M080120Z,BTD25350MSBWR,B2M020120Y,BTL27524,B3D05120E,B2DM100120N1,BD2D40A065S1
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