【产品】V-DS为-30V的P道MOS场效应管AP3401,R-DS(ON) < 70mΩ ,适用于作负载开关应用
铨力半导体推出的AP3401是一款采用SOT23塑封封装P道MOS场效应管,具有V-DS(V)= -30V,l-D=-4.2A (V-GS = -10V),R-DS(ON)< 60mΩ (V-GS = -10V),R-DS(ON) < 70mΩ (V-GS = -4.5V),R-DS(ON) < 85mΩ (V-GS = -2.5V)的特征,适用于作负载开关或脉宽调制应用。
●特征
V-DS(V)= -30V
l-D=-4.2A (V-GS = -10V)
R-DS(ON)< 60mΩ (V-GS = -10V)
R-DS(ON) < 70mΩ (V-GS = -4.5V)
R-DS(ON) < 85mΩ (V-GS = -2.5V)
●用途
适用于作负载开关或脉宽调制应用
●内部等效电路
●引脚排列
●极限参数(Ta=25°C)
●电性能参数(Ta=25°C)
●外形尺寸图(单位:MM)
SOT-23
●耐焊接热试验条件
温度:260±5℃ 时间:10±1 sec.
●包装规格
- |
- +1 赞 0
- 收藏
- 评论 0
本文由放弃是坚强的第一课转载自铨力半导体,原文标题为:AP3401 P沟道MOS场效应管(AP3401 P-Channel Power MOSFET),本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
相关推荐
【产品】SOT23-3塑封封装的P沟道MOSFET BRCS3407MC,适用于作负载开关或脉宽调制应用
蓝箭电子推出的BRCS3407MC是一款采用SOT23-3塑封封装的P道MOS场效应管,无卤产品,适用于作负载开关或脉宽调制应用。
产品 发布时间 : 2022-06-05
【产品】采用SOT-23塑封封装的P道MOS场效管AP2301B,主要用于显示屏驱动
铨力半导体推出的AP2301B是一款应采用SOT-23塑封封装的P道MOS场效管,主要用于显示屏驱动。特征:沟道场效应管;MOS场效应管。耐焊接热试验条件:温度260±5℃; 时间10±1sec。
产品 发布时间 : 2022-04-21
【产品】采用SOT23塑封封装的P道MOS场效应管AP3407,漏源电压为-30V,适用于作负载开关
铨力半导体推出的AP3407是一款采用SOT23塑封封装的P道MOS场效应管。该P通道功率MOSFET的漏源电压为-30V,漏极电流(持续)为-4.1A,适用于作负载开关应用或脉宽调制应用。
产品 发布时间 : 2022-04-16
铨力半导体(All Power)功率MOSFET选型指南
目录- MOS/IGBT
型号- AP2302B,AP9435,APG060N85,AP90N03Q,AP3415E,AP10N10S,AP90N04G,AP2055K,AP4008QD,AP20N06T,AP90N04K,AP150N03Q,APG078N07K,APG011N04G,AP1310K,AP2003,AP150N03G,AP3404S,AP4407C,AP4410,AP4910GD,AP50N04QD,AP80P04K,AP3908QD,AP2N7002,AP30H80Q,AP200N04D,AP2020G,AP9565K,AP3205,AP30H80K,AP30H80G,AP20N100Q,AP8205,AP40P04K,AP4013S,APG080N06G-AU,APG042N01D,AP4008SD,APG180N01GD,AP4407,AP2301B,AP33N10,AP40P05,AP30P06K,AP90N04Q,AP50N06,AP25P30Q,AP1002,AP2333,AP40P04G,AP2335,AP3401S,AP0903Q,AP3010,AP50N04Q,AP30P06G,APG038N01G,APG046N01G,AP0903G,AP50N04K,AP8810,AP2714QD,AP3003,APG068N04G,APC65R360M,AP3400A,AP120N04K,AP2310S,AP55N03K,APG068N04Q,APG078N07,AP30H220G,AP7N10K,AP90P03Q,AP50P20Q,APG024N04G,AP180N03G,AP15N10K,APG077N01G,AP50P20K,APC65R190FM,AP200N04,AP90N03GD,APG035N04Q,AP25P06K,AP2012,AP2714SD,AP30H180K,AP1605,AP90P03K,APG035N04G,AP1606,AP8205A,AP90P03G,APC65R360FM,AP4435,AP40N100KL,AP4438,APG045N85,AP40T120WH,AP1310,AP2N65K,AP60P20Q,AP2716QD,AP60P20K,AP25N06K,AP4688S,APG042N01,APG060N12,AP12N10S,APG013N04G,AP50P03K,AP2317QD,AP30H100KA,AP4812,AP2080Q,APG095N01,AP2080K,AP20P30S,AP2012S,APG095N01K,AP20P30Q,AP2080G,AP60N04G,APG095N01G,APC65R041WMF,AP50N06K,APP50N06,AP040N03G,AP3004S,APG060N85D,AP3020,AP70P03K,AP2716SD,AP3908GD,AP60N04Q,AP6007S,AP4946S,AP40N100K,AP18N20,AP3912GD,AP30H50Q,AP4813K,AP0803QD,AP9926,AP6242,AP3407S,APG070N12G,AP4606B,AP30N03K,AP2022S,AP3100A,AP75N04K,AP80N06T,APG4015G,AP85N04Q,AP2035G,AP6802,AP85N04K,AP6800,AP2318A,APG050N85,APG250N01Q,AP85N04G,AP3416,AP120N03,AP5N20K,AP30H150G,AP2310,AP30H150K,AP6009S,AP2035Q,APG060N12D,APG022N06G,AP2312,AP3402,AP30H60K,AP3400,AP3401,AP2316,AP4616,AP15P03Q,AP3407,AP3404,AP2317,AP4822QD,APG050N85D,APC65R600KM,AP2020K,AP80N04Q,AP30H150KA,AP2045K,AP30H150Q,AP30P06,AP2045G,AP2301,AP0903GD,AP2300,AP68N06G,AP6900,AP2305,AP4847,AP4606,AP4846,AP5N10M,AP4P20,APC60R030WMF,AP9N20K,AP80N04G,AP5N10S,AP2045Q,AP2317SD,AP3910GD,APG082N01,APG011N03G,AP4409S,AP4953,AP2317A,AP30P30S,AP3065SD,AP30P30Q
铨力半导体Trench MOS选型表
铨力半导体提供如下参数的Trench MOS:先进的沟槽技术,出色的RDS(on)和低栅极电荷, VGS (V)跨度达±20,多种封装形式SOT23-3/SOT23-6/SOP-8等
产品型号
|
品类
|
Package Type
|
Configuration
|
MOSFET Type
|
VDS (V)
|
VGS (V)
|
Vth (V)
|
RDS(on) (mΩ) max. at VGS=10V
|
RDS(on) (mΩ) max. at VGS=4.5V
|
RDS(on) (mΩ) max. at VGS=2.5V
|
RDS(on) (mΩ) max. at VGS=1.8 V
|
ID(A) Tc=25℃
|
ID(A) Tc=100℃
|
AP2302B
|
Trench Mos
|
SOT23
|
Single
|
N
|
20
|
±8
|
0.5-1.2
|
-
|
45/52
|
52/67
|
-
|
2
|
-
|
选型表 - 铨力半导体 立即选型
电子商城
服务
定制液冷板尺寸5mm*5mm~3m*1.8m,厚度2mm-100mm,单相液冷板散热能力最高300W/cm²。
最小起订量: 1片 提交需求>
提供全面表征产品器件耗电特征及功耗波形、快速瞬态效应、电源优化、表征和仿真测试服务,使用直流电源分析仪测量精度达50µV,8nA,波形发生器带宽100kHz,输出功率300W,示波器200kHz,512 kpts
实验室地址: 深圳/苏州 提交需求>
登录 | 立即注册
提交评论