【选型】Alliance的DRAM AS4C256M16D3-12BCN替代S品牌K4B4G1646E可行性分析


ALLIANCE Memory是全球领先的高性能存储器及存储扩展逻辑产品厂家。Alliance Memory公司新推出的4Gb Double-Data-Rate-3 DRAM AS4C256M16D3-12BCN,双倍数据速率架构,可实现高速操作,它在内部配置为八存储区DRAM。4Gb芯片组织为32Mbit x 16 I / O x 8 bank设备。 这些同步设备在一般应用中实现了高达1600 Mb / sec / pin的高速双数据速率传输速率。
本文讨论Alliance 的AS4C256M16D3-12BCN替代S品牌 的K4B4G1646E可行性。
AS4C256M16D3-12BCN和K4B4G1646E主要参数对比如下:
表1 AS4C256M16D3-12BCN和K4B4G1646E主要参数对比表
由表可知,AS4C256M16D3-12BCN和K4B4G1646E的内存大小、频率、响应时间、工作温度范围、封装基本相同;AS4C256M16D3-12BCN的工作电压较之K4B4G1646E范围要广;AS4C256M16D3-12BCN的功耗略高于K4B4G1646E。
下面对比AS4C256M16D3-12BCN和K4B4G1646E的管脚位置、定义和封装。
图1 K4B4G1646E管脚分布
图2 AS4C256M16D-12BCN管脚分布
AS4C4M16SA和K4B4G1646E 管脚定义如下:
表2 K4B4G1646E管脚定义
表3 AS4C256M16D3-12BCN管脚定义
K4B4G1646E尺寸:
图3 K4B4G1646E尺寸图
AS4C256M16D3-12BCN尺寸:
图4 AS4C256M16D3-12BCN尺寸
AS4C256M16D3-12BCN和K4B4G1646E封装相同、管脚分布和定义也相同。有几个命名不同,且AS4C256M16D3-12BCN芯片比K4B4G1646E宽1.5mm。
综上所述,如果AS4C256M16D3-12BCN芯片宽度不影响PCB布局、功耗满足应用需求,则Alliance 的AS4C256M16D3-12BCN可以替代S品牌 的K4B4G1646E。
- |
- +1 赞 0
- 收藏
- 评论 1
本文由垂文提供,版权归世强硬创平台所有,非经授权,任何媒体、网站或个人不得转载,授权转载时须注明“来源:世强硬创平台”。
相关推荐
ALLIANCE 存储器选型表
提供存储器、存储芯片、SRAM、SDRAM、DDR1、DDR2、DDR3、DDR4选型,VCC(V):0.6-5,MSL LEVEL:0-5,CLOCK(MHz):133-1866,可支持商业级/工业级/汽车级。
产品型号
|
品类
|
Product Family
|
DENSITY
|
ORGANISATION
|
VCC(V)
|
TEMPERATURE RANGE(°C)
|
PACKAGE
|
MSL LEVEL
|
AS7C164A-15JCN
|
存储器
|
FAST-Asynch
|
64K Fast
|
8K x 8
|
5V
|
Commercial (0 ~ 70°C)
|
28pin SOJ(300mil)
|
3
|
选型表 - ALLIANCE 立即选型
Alliance DRAM/SDRAM/SRAM/eMMC/闪存选型指南
Alliance Memory is pleased to highlight our new product offerings in DRAM, SRAM, FLASH and eMMC in this new 2024 edition of our Product Selection Guide.We continue to be the premier legacy memory supplier offering high quality products, minimal die shrinks and long term support.
ALLIANCE - SERIAL NOR FLASH,DDR3L 1.35V SDRAM,同步DRAM,DDR1 2.5V DRAM,LPDDR4X,串行NOR闪存,LPDDR4,FAST ASYNCHRONOUS SRAM,DDR3L SDRAM,并行5V NOR闪存,PARALLEL 5V NOR FLASH,SLC PARALLEL NAND FLASH,低功耗SRAM,快速异步SRAM,SYNCHRONOUS DRAM,PSRAM PSEUDO SRAM,MOBILE LOW POWER SDRAM,DDR3 1.5V SDRAM,串行SLC NAND闪存,移动低功耗SDRAM,SLC并行NAND闪存,DDR4 SDRAM,PSRAM伪SRAM,EMMC,移动式低功耗DDR1,SERIAL SLC NAND FLASH,DDR3 SDRAM,LOW POWER SRAMS,移动式低功耗DDR2,DDR2 1.8V DRAM,MOBILE LOW POWER DDR1,MOBILE LOW POWER DDR2,AS4C8M16SA-7TXN,AS6C2008A,AS6C62256-55SXN,ASFC64G31T5-51BIN,AS4C8M32MD2A-25BPCN,AS4C64M32MD2A-25BIN,AS5F18G04SND-10LIN,AS1C512K16P-70BIN,AS4C8M32MSB-6BIN,AS7C38096B-10BIN,ASFC32G31T3-51BIN,AS29CF160B-55TIN,AS4C16M16SA-6TXN,AS7C31025C-12JIN,AS7C31024B-XXTCN,M29F160FT55N3E2,AS4C64M16MD2A-25BIN,AS4C32M16MSB-6BIN,M29F800FT55N3E2,AS25F1128MQ-70WIN,AS7C1024B-XXJCN,AS5F34G04SNDB-08LIN,AS29CF800T-55TIN,AS4C8M16SA-6BXN,AS4C4M16SA-6TXN,AS9F38G08SA-25BIN,N25Q064A13ESFA0F,AS25F364MQ-10WIN,AS9F31G08SA-25BIN,AS4C32M8D1-5TXN,AS4C64M4SA-6 TXN,AS4C256M16D4-83BXN,AS7C31025B-XXJIN,AS4C8M16SA-6 TXN,AS1C1M16P-70BIN,AS4C8M16SA-7 BXN,AS25F34MD-10S1IN,AS6C6416-55TIN,AS4C128M8D2A-25BXN,AS6C2008A-55TIN,AS4C2M32S-7BXN,AS4C512M16D3LC-12BXN,AS4C2M32SA-7 TXN,AS7C1026B-XXTIN,AS7C325632-10BIN,AS6C2016-55ZIN,AS4C16M16SA-7TXN,AS1C1M16PL-70BIN,N25Q064A13EF8H0E,AS6C4016B-45BIN,AS4C512M8D4A-75BXN,AS4C512M16D4A-62BXN,AS4C1G32MD4V-046BIN,AS7C34096B-10BIN,AS4C4M16SA-7TXN,AS6C1008-55PCN,AS7C164A-15PXN,AS1C8M16PL-70BIN,AS6C1008-55SIN,AS4C256M16MD4V-062BAN,N25Q032A13ESCA0F,AS7C34098B,ASFC4G31M-51BIN,AS5F32G04SNDB-08LIN,AS4C4M16SA-6BXN,AS7C34098A,N25Q064A13EF640E,AS7C38098A-10BIN,AS7C3256A-XXTIN,AS4C32M16D3-12BXN,M45PE80-VMP6G,AS4C8M16SA-6TXN,AS4C32M16D3L-12BXN,AS7C1026B-XXTCN,AS4C64M16D2B-25BCN,AS4C128M32MD2A-25BIN,AS7C4098A-XXJXN,AS4C512M16MD4V-053BIN,AS7C256A-XXTIN,AS4C1G8D3LA-10BXN,AS4C2M32S-6BXN,AS4C8M32S-6TXN,AS4C256M16D3C-93BXN,AS4C128M16MD2A-25BIN,AS7C4096A-XXTXN,AS4C64M4SA-7 TXN,AS4C32M16SB-7 TXN,AS4C512M8D4-83BXN,AS4C16M16MSA-6BIN,AS6C8016B,AS6C1008-55TIN,AS4C4M32SA-6 TXN,AS7C38098A-10TIN,AS4C64M16MD1A-5BIN,A7C351232-10BIN,AS6C8016,AS7C34096A,AS9F14G08SA-45BIN,AS7C34096B,AS7C34096B-10TIN,AS6C1616B-45BIN,AS4C2M32SA-6 TXN,AS4C4M16SA-7 TXN,AS4C16M16SA-7 TXN,AS6C1616-55TIN,AS7C316098A,AS7C316098B,AS4C16M16MD1-6BCN,AS4C256M32MD4-062BAN,AS6C1016-55BIN,AS29CF040-55CCIN,AS6C4008-55SIN,AS4C512M8D3LC-12BXN,AS6C4008-55PCN,AS6C1616B-55BIN,AS4C8M32SA-6 BXN,AS7C316096B-10TIN,AS4C128M8D3B-12BXN,AS5F31G04SND-08LIN,ASFC16G31M-51BIN,AS4C32M16D1A-5TXN,AS4C128M16MD4V-062BAN,AS6C4008-70SAN,AS6C8008B-45BIN,AS4C32M16SB-7TXN,AS7C31024B-XXTJCN,AS4C8M32MD2A-25BCN,AS7C32098A-XXTXN,AS25F304MD-10S1IN,AS7C3256A,AS25F1128MQ-70SIN,AS6C8016B-55ZIN,AS6C1608B-45BIN,M45PE16-VMW6TG,AS6C1016,AS6C4008-55BIN,AS7C351232,AS7C316096A-10TIN,AS4C8M16MSB-6BIN,M45PE20-VMN6P,AS4C256M16D3C-93BCN,AS4C16M32SB-6BXN,AS7C38096A-10TIN,AS4C32M16SB-6 TXN,AS4C64M16D1-6TXN,AS6CE4016B-45BIN,AS6C2016,AS6C1616B-45TIN,AS7C256B-XXPIN,AS7C1024B-XXJIN,AS7C34098A-XXTXN,AS7C1025B-XXJCN,AS4C256M16MD4-062BAN,AS4C16M16SB-6TXN,AS6C62256-55STXN,AS4C8M16SB-6TIN,AS7C34096A-XXJXN,AS4C256M16D4A-62BXN,AS6C8008-55ZIN,AS6C2008,AS6C4008-55STIN,AS6C2008-55TIN,AS4C16M16MSB-6BIN,M29F800FB5AN6F2,AS7C316096B-10BIN,AS4C8M16SA-7BXN,AS7C31026B-XXJCN,AS7C31025B-XXJCN,AS4C32M8SA-6TXN,AS7C32098A,AS4C64M32MD1-5BXN,AS7C38096A-10BIN,AS4C1G16D4-062BCN,AS4C1G8D4A-62BXN,AS6C1616B-55TIN,AS6C2008-55STIN,AS4C4M32S-7BXN,AS4C4M32D1A-5BXN,AS4C128M16D2-25BXN,AS6C8016B-45ZIN,AS4C4M32SA-6TXN,AS25F316MQ-10S1IN,AS7C32096A,AS6C1008-55PIN,AS4C16M16SB-7TXN,M45PE80-VMP6TG,AS4C4M32S-6BXN,AS4C4M16SA-5TXN,M29F400FT5AN6E2,AS4C32M16MD1A-5BCN,AS4C64M16D1A-6BIN,AS7C1026B,AS4C512M16D4A-62BAN,AS6C1008,AS7C513B,AS4C128M16D3C-93BCN,M29F800FB5AN6E2,AS6C6416-55BIN,AS4C512M32MD4V-046BIN,AS7C31025B-XXTJCN,AS9F14G08SA-45BAN,AS5F14G04SND-10LIN,AS6C3216A,AS7C1025B,AS9F34G08SA-25BIN,AS7C316096C-10TIN,N25Q032A13ESFA0F,AS4C32M8SA-7TXN,AS4C32M16SC-7TIN,AS4C16M32SC-7TIN,AS4C32M8SA-6 TXN,AS4C2M32SA-6TXN,AS6C6264-55SCN,AS4C32M16D1-5BXN,AS4C8M32SA-7BXN,AS7C1024B,AS7C34098B-10TIN,AS4C32M16D2C-25BXN,AS4C16M16D1-5BXN,AS7C31026B-XXTCN,AS4C4M32SA-7TXN,AS6C4016,AS7C3256A-XXJIN,AS9F18G08SA-45BAN,AS9F32G08SA-25BIN,AS7C256A-XXJIN,AS7C1026B-XXJCN,AS4C1M16S-7TXN,AS4C32M32MD1A-5BIN,AS7C38096B,AS4C64M4SA-7TXN,N25Q064A13EF8A0E,N25Q064A13EF8A0F,AS6C4008,AS4C64M8SC-7TIN,AS7C38096A,AS4C8M16D1A-5TXN,AS4C8M16D1-5BXN,AS4C256M8D2A-25BCN,AS7C4098A-XXTXN,AS5F32G04SNDA-08LIN,AS5F34G04SNDA-08LIN,AS6C1616B,AS4C16M32MD1-5BXN,AS4C1M16S-6TXN,AS4C512M16D3LA-10BXN,AS4C64M4SA-6TXN,AS4C8M16MSA-6BIN,AS6C2016-55BIN,M29F400FB55N3E2,AS4C8M32S-6 TXN,AS6C4016B-45ZIN,AS1C512K16PL-70BIN,AS7C316096C-10BIN,M29F400FB55N3F2,AS4C8M32SA-7 BXN,AS7C3513B-XXTCN,AS7C513B-XXTCN,AS4C1G8D4-75BXN,AS6C1008-55STIN,AS7C34098A-12JCNTR,AS4C512M8D3LC-10BAN,AS7C38098A,AS7C34098B-10BIN,M29F160FB5AN6F2,AS29CF800B-55TIN,AS6C2008-55BIN,AS62V256-70SIN,AS7C31024B-XXJCN,AS6C8016-55TIN,AS4C4M16SB-6TIN,AS4C32M8SA-7 TXN,AS4C16M32MSA-6BIN,AS6C1608B-45TIN,AS4C512M16D4-75BXN,AS6C4016B,AS6C8008-55BIN,AS6C6416,AS7C1025B-XXJIN,AS4C2M32SA-7TXN,AS4C8M32SA-6BXN,AS7C1024B-XXTCN,AS7C4096A-XXJXN,AS4C32M16D1-5TXN,AS7C316098A-10TIN,AS4C16M32MSB-6BIN,AS6C1616C-45TIN,AS5F32G04MND-08LIN,AS6C2008-55SIN,AS7C316096A,AS7C316096B,AS6C1608B,AS7C1024B-XXTJCN,AS6C6264-55SIN,AS4C8M32S-7 TXN,AS7C4096A,AS6C6264-55PCN,AS4C32M16D2A-25BXN,AS4C256M32MD4V-062BAN,AS4C256M16D4A-75BXN,AS7C316096C,N25Q032A13EF640F,AS1C2M16P-70BIN,AS4C64M8D3L-12BXN,N25Q064A11ESEA0F,AS7C3256A-XXJCN,AS7
A Brief Introduction of DDR4 SDRAMs, LPDDR4x SDRAMs and eMMC Components of ALLIANCE
This article makes a brief introduction of DDR4 SDRAMs, LPDDR4x SDRAMs and eMMC components of ALLIANCE.
8Gb LPDDR4X SDRAM
本资料介绍了8Gb LPDDR4X SDRAM的特性、功能和应用。该内存芯片采用双通道架构,支持高速数据传输,具有双向差分数据选通、可编程读写延迟、片上ECC等功能。此外,还提供了详细的引脚功能描述、初始化和掉电序列、模式寄存器定义等内容。
ALLIANCE - SDRAM,AS4C256M32MD4V-062BAN,AS4C256M32MD4V-062BANXX
【产品】8Gbit双倍数据速率DDR3L同步DRAM(SDRAM)AS4C1G8D3LA,78-ball FPGA封装
Alliance Memory推出了一款结构为128M words x 8 bits x 8 banks、双倍数据速率(DDR3L)同步DRAM(SDRAM)AS4C1G8D3LA。采用双倍数据速率架构,每个时钟周期可传输两次数据,8位预流水线结构可实现高速数据传输。
AS4C256M16D3C 256M x 16位DDR3同步DRAM(SDRAM)
本资料介绍了AS4C256M16D3C 4Gb DDR3 SDRAM的特性、应用和操作模式。该产品支持JEDEC标准,具有1.5V供电、96球FBGA封装,适用于商业和工业温度范围。产品特性包括高速时钟率、双向差分数据、动态ODT、自动刷新和自我刷新等功能。
ALLIANCE - 256M X 16 BIT DDR3 SYNCHRONOUS DRAM,256M X 16位DDR3同步DRAM,4GB双数据速率3 DRAM,4GB DOUBLE-DATA-RATE-3 DRAMS,SDRAM,AS4C256M16D3C-10BCN,AS4C256M16D3C,AS4C256M16D3C-93BCN,AS4C256M16D3C-12BIN,AS4C256M16D3C-10BIN,AS4C256M16D3C-12BCN,AS4C256M16D3C-93BIN
8GB、16GB、32GB LPDDR4x SDRAM
本资料介绍了8Gb、16Gb、32Gb LPDDR4x SDRAM的规格、特性、引脚描述和功能说明。资料涵盖了产品的关键特性,包括双数据率架构、双向数据选通、差分时钟输入、命令和地址输入、内部银行配置、数据总线反转、突发长度和类型、读写延迟、预充电选项、驱动强度配置、刷新和自刷新模式、部分阵列自刷新和温度补偿自刷新、写级联、CA校准、内部VREF和VREF训练、基于FIFO的读写训练、多用途命令、LVSTLE IO、电源电压和封装类型等。
ALLIANCE - 32GB LPDDR4X SDRAM,LPDDR4X SDRAM,8GB LPDDR4X SDRAM,16GB LPDDR4X SDRAM,16GB LPDDR4X SDRAM,8GB LPDDR4X SDRAM,32GB LPDDR4X SDRAM,AS4C512M32MD4V-053BIN,AS4C512M32MD4VA-62BINXX,AS4C1G16MD4V-046BIN,AS4C512M16MD4V-053BIN,AS4C512M32MD4V-046BIN,AS4C1G32MD4V-046BIN,AS4C512M32MD4VA-62BANXX,AS4C512M32MD4VA-62BCNXX
AS4C256M16D3LC 256M x 16位DDR3L同步DRAM(SDRAM)
该资料介绍了AS4C256M16D3LC汽车级96球FBGA封装的4Gb DDR3L同步动态随机存取存储器(SDRAM)的特性。它符合JEDEC标准,支持AEC-Q100规范,具有低电压供电、宽工作温度范围等特点。产品具备高速数据传输能力,适用于多种应用场景。
ALLIANCE - 4GB双数据速率3(DDR3L)DRAM,DDR3L 同步DRAM,DDR3L SYNCHRONOUS DRAM,4GB DOUBLE-DATA-RATE-3 (DDR3L) DRAMS,AS4C256M16D3LC-10BAN,AS4C256M16D3LC-12BANXX,AS4C256M16D3LC,AS4C256M16D3LC-10BANXX,AS4C256M16D3LC-12BAN
AS4C128M8D3LC-12BAN 128M X 8位DDR3L同步DRAM(SDRAM)
本资料介绍了AS4C128M8D3LC-12BAN 1Gb DDR3L汽车级同步DRAM的特性、功能和应用。该产品符合JEDEC标准和AEC-Q100标准,支持1.35V至1.45V的电源电压,工作温度范围为-40°C至105°C。产品具有高速率、低功耗、高可靠性等特点,适用于汽车、工业等领域。
ALLIANCE - 128M X 8位DDR3L同步DRAM,1GB DDR3L DRAMS,1GB双倍数据速率3L DRAM,128M X 8 BIT DDR3L SYNCHRONOUS DRAM,1GB DOUBLE-DATA-RATE-3L DRAMS,SDRAM,1GB DDR3L DRAM,AS4C128M8D3LC,AS4C128M8D3LC-12BAN
AS4C256M8D3LC 256M x 8位DDR3L同步DRAM(SDRAM)
该资料介绍了AS4C256M8D3LC 2Gb DDR3L同步动态随机存取存储器(SDRAM)的特性、功能和应用。它符合JEDEC标准,支持1.35V至1.45V的电源电压,具有高速操作能力,最高时钟频率为800MHz。产品具备双向差分数据选通、预充电和活动功率下降等功能,适用于商业和工业温度范围。
ALLIANCE - DDR3L动态随机存取存储器,DDR3L 同步DRAM,双数据速率-3 DRAM,DOUBLE-DATA-RATE-3 DRAMS,DDR3L SYNCHRONOUS DRAM,SDRAM,DDR3L DRAM,AS4C256M8D3LC,AS4C256M8D3LC-12BIN,AS4C256M8D3LC-12BC/INXX,AS4C256M8D3LC-12BCN
AS4C2M32S 2M x 32位同步DRAM(SDRAM)
该资料详细介绍了AS4C2M32S 2M x 32位同步动态随机存取存储器(SDRAM)的技术规格和应用。文档涵盖了产品特性、操作模式、命令集、引脚说明、绝对最大额定值、推荐直流工作条件、电容参数等内容。
ALLIANCE - 2M X 32位同步DRAM,高速CMOS同步DRAM,HIGH-SPEED CMOS SYNCHRONOUS DRAM,SDRAM,2M X 32 BIT SYNCHRONOUS DRAM,AS4C2M32S,AS4C2M32S6BCNXX,AS4C2M32S-6BCN,HIGH MEMORY BANDWIDTH,高内存带宽
AS4C4G8D4 32GB(4G X 8)双芯片DDR4 SDRAM
本资料介绍了AS4C4G8D4 32Gb (4G x 8) 双芯片 DDR4 SDRAM的规格、特性、电气参数和应用。该产品采用两个16Gb DDR4 SDRAM芯片组成,具有高速数据传输能力,适用于多种商业温度范围。
ALLIANCE - 32GB (DUAL DIE) DDR4 SDRAM,32GB(双芯片)DDR4 SDRAM,32GB ( 4G X 8) DUAL DIE DDR4 SDRAM,32GB(4G X 8)双芯片DDR4 SDRAM,AS4C4G8D4-62BCN,AS4C4G8D4,AS4C4G8D4-62BCNXX
低功耗SDRAM的优势及应用
ALLANCE的DDR3 SDRAM系列具有其速度快、容量大、价格便宜以及功耗低等各种优势,因此可以广泛的应用于图像处理与高速数据采集等场合。
【产品】第二代SDRAM 1GB容量助力解决高速存储
AS4C128M8D2-25BIN是一款容量为1Gb的DDR2 CMOS SDRAM,符合JEDEC时钟抖动规范,采用交叉存取的方式,相比起标准DRAM具有更快的速度,大容量小尺寸因此应用范围极广。
AS4C128M16D3C-93BCN AS4C128M16D3C-93BIN 128M X 16位DDR3同步DRAM(SDRAM)
该资料详细介绍了AS4C128M16D3C-93BxN 2Gb DDR3 SDRAM的特性和操作模式。该产品符合JEDEC标准,支持1.5V电源电压,具有高速率、低功耗等特点,适用于商业和工业级应用。
ALLIANCE - DDR3 SYNCHRONOUS DRAM,DDR3 SDRAM,2GB DOUBLE-DATA-RATE-3 DRAMS,DDR3同步DRAM,2GB双数据速率3 DRAM,AS4C128M16D3C-93BIN,AS4C128M16D3C-93BCN
电子商城
现货市场
登录 | 立即注册
提交评论