Alliance Memory Launched a Line of 1Gb, 2Gb, and 4Gb Mobile LPDDR2 SDRAMs to Increase Battery Life in Portable Electronics
SAN CARLOS, Calif. — April 12, 2017 — ALLIANCE Memory introduced a line of high-speed CMOS mobile low-power DDR2 SDRAMs(Mobile LPDDR2 SDRAMs) with densities of 1Gb, 2Gb, and 4Gb in the 134-ball FBGA package. The devices offer a variety of power-saving features, including 1.2 V/1.8 V operating voltages, to extend battery life in portable electronics, while their high density enables ultra-slim designs.
The LPDDR2 SDRAMs provide reliable drop-in, pin-to-pin compatible replacements for a number of similar solutions in ultra-low-voltage cores and I/O power supplies for mobile devices such as smartphones and tablets. For these products, the ICs feature auto temperature-compensated self-refresh (TCSR) to minimize power consumption at lower ambient temperatures. In addition, their partial-array self-refresh (PASR) feature reduces power by only refreshing critical data, while a deep power down (DPD) mode provides an ultra-low power state when data retention isn’t required.
Featuring a double data rate four-bit prefetch architecture, the LPDDR2 SDRAMs deliver high-speed operation with clock rates of 400MHz and 533MHz, and are available in commercial (-30℃ to +85℃) and industrial (-40℃ to +85℃) temperature ranges. The devices offer programmable read or write burst lengths of 4, 8, or 16; an auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh. The RoHS-compliant ICs are lead (Pb)- and halogen-free.
Device Specification Table
Alliance Memory offers an extensive line-up of mobile low-power SDRAMs to help designers meet the demand for reduced power consumption in portable electronics, including 64M, 128M, 256M, 512M, and 1GB LPDDR1 SDRAMs and 16GB LPDDR3 SDRAMs. 8GB 256M x 32 LPDDR2 SDRAMs in the 134-ball FBGA package will also be available soon.
Samples and production quantities of the LPDDR2 SDRAMs are available now.
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本文由涂抹转载自ALLIANCE News,原文标题为:Alliance Memory Launches New Line of 1Gb, 2Gb, and 4Gb Mobile LPDDR2 SDRAMs to Increase Battery Life in Portable Electronics.,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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Alliance Memory announced that the company’s portfolio of low-power SDRAMs for mobile and embedded systems in the automotive, consumer, industrial, and medical spaces continues to grow. The latest additions include two new 256Mb LPDDR2 devices: the AS4C8M32MD2A-25B2CN and AS4C8M32MD2A-25BCN.
Alliance Memory Expanded Low-Power SDRAM Portfolio and Offered LPSDR, LPDDR, and LPDDR2 Devices in Wide Range of Densities and Package Options
Alliance Memory, a manufacturer of hard-to-find SRAM, DRAM, and SDRAM ICs, announced that its SDRAM portfolio now features a wide variety of components that combine low power consumption with power-saving features to extend battery life in mobile devices.
Alliance Memory Provides Low-Power SDRAMs in a Wide Range of Densities and Package Options
Alliance Memory’s SDRAM portfolio now features a wide variety of components that combine low power consumption with power-saving features to extend battery life in mobile devices.
ALLIANCE 存储器选型表
提供存储器、存储芯片、SRAM、SDRAM、DDR1、DDR2、DDR3、DDR4选型,VCC(V):0.6-5,MSL LEVEL:0-5,CLOCK(MHz):133-1866,可支持商业级/工业级/汽车级。
产品型号
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品类
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Product Family
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DENSITY
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ORGANISATION
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VCC(V)
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TEMPERATURE RANGE(°C)
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PACKAGE
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MSL LEVEL
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AS7C164A-15JCN
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存储器
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FAST-Asynch
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64K Fast
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8K x 8
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5V
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Commercial (0 ~ 70°C)
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28pin SOJ(300mil)
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3
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选型表 - ALLIANCE 立即选型
NOR FLASH+PSRAM合成芯片 64Mb以上容量,数据及地址线并行,有没有两颗可以兼容的型号。
NOR FLASH主要用于存储程序,而PSRAM(或SDRAM)则是用于存储运行时的数据,单独的NOR FLASH 和PSRAM(或SDRAM)芯片,在引脚封装、接口定义、主频上是不兼容的,所以不能用一个元器件的封装来兼容两个不同类别的存储器。但针对手机应用,由于体积和重量限制,是有用将NOR FLASH 和PSRAM封装到一起的存储器芯片的。目前我们代理的存储器品牌ALLIANCE,有用于手机的存储器DDR1(256Mb,512Mb,1Gb和2Gb,宽度16位和32位,主频166MHZ和200MHZ),DDR2(1Gb,2Gb,4Gb和8Gb,宽度16位和32位,主频400MHZ和533MHZ)如:4Gb的AS4C128M32MD2,8Gb的AS4C256M32MD2和DDR3(16Gb,宽度32位,主频667MHZ):16Gb的AS4C512M32MD3-15BCN,没有这种将NOR FLASH 和PSRAM(SDRAM)封装到一起的存储器芯片。
【产品】面向低功耗内存新标准的高速率SDRAM,助力移动应用
AS4C64M16MD2和AS4C32M32MD2采用了面向低功耗内存的全新标准——LPDDR2,内部配置8位存储器。
AS4C128M32MD2-18BCN AS4C128M32MD2-18BIN
描述- 本资料详细介绍了AS4C128M32MD2系列LPDDR2 SDRAM的规格、特性、引脚配置、信号描述、功能块图、状态图、基本功能、上电、初始化和掉电序列、模式寄存器定义等内容。该系列内存具有4G比特密度,采用16M words x 32 bits x 8 banks组织,支持低功耗、双数据率架构、双向和差分数据总线等特性。资料还提供了订购信息和速度等级信息。
AS4C64M32MD2-25BCN AS4C128M16MD2-25BCN AS4C64M32MD2-20BCN/AS4C128M16MD2-20BCN 134焊球FBGA封装
描述- 本资料详细介绍了AS4C64M32MD2-25BCN和AS4C128M16MD2-25BCN两款LPDDR2 SDRAM器件的技术规格。内容包括:双数据率架构、双向数据存取、差分时钟和数据存取信号、命令和地址输入、内部银行结构、数据掩码、突发长度和类型、读写延迟、自动预充电、可配置驱动强度、自动刷新和自我刷新模式、部分阵列自我刷新和温度补偿自我刷新、深度掉电模式、HSUL_12兼容输入、电源电压、无DLL同步、边缘对齐数据输出和中心对齐数据输入、工作温度、自动刷新占空比、封装类型等。此外,还提供了订购信息、速度等级信息、功能框图、引脚定义和描述、封装尺寸和球位图、功能描述、模式寄存器定义等内容。
AS4C64M16MD2-25BCN AS4C32M32MD2-25BCN AS4C64M16MD2-20BCN/AS4C32M32MD2-20BCN 134焊球FBGA封装
描述- 本资料详细介绍了AS4C64M16MD2-25BCN和AS4C32M32MD2-25BCN两种LPDDR2 SDRAM器件的技术规格。资料涵盖了器件的关键特性,如双数据率架构、双向数据存取、差分时钟和数据存取信号、8个内部银行、可配置的驱动强度、自动刷新和自我刷新模式等。此外,还提供了订购信息、速度等级、功能框图、球栅阵列封装尺寸、球位描述、地址映射、初始化和电源管理等方面的详细信息。
【产品】面向低功耗移动应用的SDRAM,数据高速读写就靠它
AS4C128M16MD2和AS4C64M32MD2是两款采用双速率架构以实现高速数据读写操作的存储器。
AS4C16M16MD1-6BIN产品更改通知(PCN),用于Alliance LPDRAM(DDR1/DDR2/DDR3)
型号- AS4C16M16MD1-6BIN,AS4C64M16MD2-25BCN,AS4C16M16MD1-6BINTR,AS4C64M16MD1-5BCN,AS4C128M32MD2A-25BINTR,AS4C64M16MD1-5BIN,AS4C32M32MD1-5BINTR,AS4C128M32MD2-18BCNTR,AS4C128M32MD2-18BINTR,AS4C128M16MD2A-25BCN,AS4C64M16MD1-6BCNTR,AS4C64M16MD1-6BINTR,AS4C32M32MD1-5BCNTR,AS4C64M32MD2A-25BCN,AS4C64M16MD1-5BINTR,AS4C64M32MD2A-25BCNTR,AS4C64M16MD1A-5BIN,AS4C32M32MD1A-5BINTR,AS4C128M16MD2-25BCNTR,AS4C64M16MD1-5BCNTR,AS4C64M16MD1-6BCN,AS4C32M32MD1-5BIN,AS4C64M32MD2-25BCN,AS4C64M16MD2A-25BCN,AS4C32M32MD2-25BCN,AS4C64M32MD2-25BCNTR,AS4C256M32MD2-18BIN,AS4C32M32MD1-5BCN,AS4C512M32MD3-15BCN,AS4C128M32MD2A-18BINTR,AS4C64M16MD1A-5BINTR,AS4C64M16MD1-6BIN,AS4C32M32MD2-25BCNTR,AS4C256M32MD2-18BCN,AS4C512M32MD3-15BCNTR,AS4C64M16MD2-25BCNTR,AS4C32M32MD1A-5BIN,AS4C32M32MD2A-25BCNTR,AS4C128M32MD2A-25BIN,AS4C256M32MD2-18BINTR,AS4C128M16MD2-25BCN,AS4C128M32MD2A-18BIN,AS4C128M32MD2-18BIN,AS4C32M32MD2A-25BCN,AS4C256M32MD2-18BCNTR,AS4C128M16MD2A-25BCNTR,AS4C64M16MD2A-25BCNTR,AS4C128M32MD2-18BCN
AS4C16M16MD1-6BIN产品变更通知(PCN),用于Alliance LPDRAM
型号- AS4C128M32MD2A-25BINTR,AS4C64M16MD1-5BIN,AS4C32M32MD1-5BINTR,AS4C128M32MD2-18BCNTR,AS4C64M32MD2A-25BIN,AS4C64M16MD1-6BCNTR,AS4C64M32MD2A-25BINTR,AS4C32M32MD1A-5BINTR,AS4C32M16MD1A-5BIN,AS4C64M16MD1-5BCNTR,AS4C64M16MD1-6BCN,AS4C64M16MD2A-25BIN,AS4C32M32MD1-5BIN,AS4C512M32MD3-15BCN,AS4C128M32MD2A-18BINTR,AS4C256M32MD2-18BCN,AS4C32M16MD1-5BCN,AS4C512M32MD3-15BCNTR,AS4C32M16MD1-5BCNTR,AS4C64M16MD2-25BCNTR,AS4C32M32MD1A-5BIN,AS4C128M32MD2A-25BIN,AS4C128M32MD2A-18BIN,AS4C256M32MD2-18BCNTR,AS4C128M32MD2-18BCN,AS4C16M16MD1-6BIN,AS4C64M16MD2-25BCN,AS4C16M16MD1-6BINTR,AS4C64M16MD1-5BCN,AS4C128M32MD2-18BINTR,AS4C128M16MD2A-25BIN,AS4C64M16MD1-6BINTR,AS4C32M32MD1-5BCNTR,AS4C64M16MD1-5BINTR,AS4C32M16MD1A-5BINTR,AS4C64M16MD1A-5BIN,AS4C128M16MD2-25BCNTR,AS4C64M16MD2A-25BINTR,AS4C64M32MD2-25BCN,AS4C32M32MD2-25BCN,AS4C64M32MD2-25BCNTR,AS4C256M32MD2-18BIN,AS4C32M32MD1-5BCN,AS4C64M16MD1A-5BINTR,AS4C64M16MD1-6BIN,AS4C32M32MD2-25BCNTR,AS4C128M16MD2A-25BINTR,AS4C256M32MD2-18BINTR,AS4C128M16MD2-25BCN,AS4C128M32MD2-18BIN,AS4C32M32MD2A-25BINTR,AS4C32M32MD2A-25BIN
【产品】多种容量和封装选项的低工作电压SDRAM
Alliance Memory推出多种SDRAM产品,将低工作电压与省电功能相结合,可延长移动设备的电池寿命。
【产品】双数据架构,高速LPDDR2 256M的动态随机存储器AS4C8M32MD2A-25B2CN
全球领先的高性能存储器及存储扩展逻辑产品厂家Alliance推出的型号为AS4C8M32MD2A-25B2CN 的 LPDDR2 SDRAM是高速CMOS,256M的动态随机存储器(Synchronous DRAM,SDRAM),由4组2M words组成的32位存储设备。
Alliance Memory LPDRAM产品(DDR1/DDR2/DDR3)变更通知(PCN12028102v2)
描述- 本资料主要讲述的内容是关于LPDRAM产品(DDR1/DDR2/DDR3)变更通知。(PCN12028102v2)。
型号- AS4C128M32MD2A-25BINTR,AS4C64M16MD1-5BIN,AS4C32M32MD1-5BINTR,AS4C128M32MD2-18BCNTR,AS4C128M16MD2A-25BCN,AS4C64M16MD1-6BCNTR,AS4C32M32MD1A-5BINTR,AS4C64M16MD1-5BCNTR,AS4C32M16MD1A-5BIN,AS4C64M16MD1-6BCN,AS4C32M32MD1-5BIN,AS4C128M32MD2A-18BINTR,AS4C256M32MD2-18BCN,AS4C32M16MD1-5BCN,AS4C32M16MD1-5BCNTR,AS4C64M16MD2-25BCNTR,AS4C32M32MD1A-5BIN,AS4C32M32MD2A-25BCNTR,AS4C128M32MD2A-25BIN,AS4C128M32MD2A-18BIN,AS4C32M32MD2A-25BCN,AS4C256M32MD2-18BCNTR,AS4C128M16MD2A-25BCNTR,AS4C64M16MD2A-25BCNTR,AS4C128M32MD2-18BCN,AS4C16M16MD1-6BIN,AS4C64M16MD2-25BCN,AS4C16M16MD1-6BINTR,AS4C64M16MD1-5BCN,AS4C128M32MD2-18BINTR,AS4C64M16MD1-6BINTR,AS4C32M32MD1-5BCNTR,AS4C64M32MD2A-25BCN,AS4C64M16MD1-5BINTR,AS4C64M32MD2A-25BCNTR,AS4C32M16MD1A-5BINTR,AS4C64M16MD1A-5BIN,AS4C128M16MD2-25BCNTR,AS4C64M32MD2-25BCN,AS4C32M32MD2-25BCN,AS4C64M32MD2-25BCNTR,AS4C256M32MD2-18BIN,AS4C64M16MD2A-25BCN,AS4C32M32MD1-5BCN,AS4C64M16MD1A-5BINTR,AS4C64M16MD1-6BIN,AS4C32M32MD2-25BCNTR,AS4C256M32MD2-18BINTR,AS4C128M16MD2-25BCN,AS4C128M32MD2-18BIN
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