UMS Launched New Two-stage GaN High Power Amplifer with Overall Power Supply 20V/0.5A
The CHA8352-99F is a two-stage GaN High Power Amplifer in the frequency band 10.7-12.75GHz. This HPA typically provides 20W of output power associated to 45% of Power Added Efficiency. The small signal gain exhibits more than 25dB. The overall power supply is of 20V/0. 5A (quiescent current).
This circuit is a very versatile amplifier for high performance systems.The circuit is dedicated to space applications and well suited for a wide range of microwave applications and systems.
The part is developed on a robust 0. 15μm gate length GaN on SiC HEMT process and is available as a bare die.
Fig.1
Main Features
■10.7-12.75 GHz frequency range
■Linear Gain is 25 dB
■43dBm Pout for +23dBm input power
■Associated PAE is more than 45% for+23dBm input power
■Associated Id is 2.2A for +23dBm input power
■DC bias: Vd=20Volts @ldq=0.5A
■Chip size 5.3x3.5x0.07mm
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本文由三年不鸣转载自UMS,原文标题为:CHA8352-99F - 20W Ku Band High Power Amplifier,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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UMS功率放大器(PA)选型表
UMS提供以下品类和技术指标的放大器产品,频率最高可达105GHz,带宽超过20GHz,Gain(dB):10-38.5,Bias(mA):30-2300,Bias(V):2.5-30.
产品型号
|
品类
|
RF Bandwidth (GHz)min
|
RF Bandwidth (GHz)max
|
Gain(dB)
|
IP3(dBm)
|
P-1dB OUT(dBm)
|
Sat. Output Power(dBm)
|
PAE(%)
|
Bias(mA)
|
Bias(V)
|
Case
|
CHA1008-99F
|
低噪声放大器
|
80
|
105
|
17
|
DC
|
5
|
DC
|
DC
|
115
|
2.5
|
Die
|
选型表 - UMS 立即选型
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产品型号
|
品类
|
RF Bandwidth (GHz) min
|
RF Bandwidth (GHz) max
|
Gain (dB)
|
IP3(dBm)
|
P-1dB OUT(dBm)
|
Sat. Output Power(dBm)
|
PAE(%)
|
Bias (mA)
|
Bias (V)
|
Case
|
CHA6015-99F
|
AMPLIFIER – HPA
|
2
|
8
|
18.5
|
-
|
36.5
|
37.5
|
29 @ 3dB comp
|
2000
|
7
|
Die
|
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电子商城
品牌:UMS
品类:GaAs Monolithic Microwave IC
价格:¥169.1086
现货: 1,503
服务
满足150W内适配器、PD快充、氮化镓快充等主流产品测试需要;并可查看被测开关电源支持协议,诱导多种充电协议输出,结合电子负载和示波器进行高精度测试。测试浪涌电流最大40A。支持到场/视频直播测试,资深专家全程指导。
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