【产品】专为高压、高速电源电感开关应用而设的DPAK封装表面贴装硅NPN功率晶体管CJD13003
Central Semiconductor (简称Central)公司是美国中央半导体公司,半导体产品处于世界领先水平,其运营团队提供最高水平的技术支持,出色的销售支持和优质的服务。Central公司推出的硅NPN功率晶体管——CJD13003,是一款采用表面贴装封装的功率晶体管,采用DPAK封装,专为高压,高速电源电感开关应用而设计。其产品实物图如图1所示。
图1.CJD13003 产品实物图
CJD13003 硅NPN晶体管的集电极-发射极电压VCEV为700V,集电极-发射极电压VCEO为400V,发射极-基极电压VEBO为9.0V。另外,其工作和存储结温的范围为-65 °C~+150 °C,结壳热阻ΘJA为80.1°C/W,具有耐高/低温的能力,适应性能强,在恶劣的环境条件下也可正常工作,这提高了其在各个电路设计中的可靠性。同时,该器件具有低反向漏电流,ICEV的最大值为100 μA(VCE=700V, VBE(off)=1.5V)。其封装轮廓和引脚定义如图2所示。
图2.产品封装轮廓和引脚定义图
另外,该产品的特征频率最小值fT为4.0MHz(VCE=10V, IC=100mA, f=1.0MHz),当IC=500mA, IB=100mA时,集电极-发射极间饱和压降VCE(SAT)最大值为0.5V。极间电容Cob典型值为20pF(VCB=10V, IE=0, f=0.1MHz)。产品具有很好的频率特性,充放电时间短,开关损耗低。主要应用于高压,高速电源电感开关等领域。
CJD13003 硅NPN晶体管的主要特点:
• 集电极-发射极电压VCEV为700V
• 集电极-发射极电压VCEO为400V
• 发射极-基极电压VEBO为9.0V
• 其耗散功率PD为1.56W(TA=25℃)
• 集电极连续电流IC为1.5A
• 工作及存储结温范围为-65°C~+150°C
• 结壳热阻ΘJA为80.1°C/W
• 采用DPAK封装
CJD13003 硅NPN晶体管的典型应用:
• 高压,高速电源电感开关
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品牌:Central Semiconductor
品类:General Purpose Transistors
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可定制波导隔离器频率覆盖5.5GHz~110GHz,插损损低至0.25dB、隔离度、正向方向功率、封装尺寸参数。
最小起订量: 1pcs 提交需求>
测试范围:扬兴晶振全系列晶体,通过对晶体回路匹配分析,调整频率、驱动功率和起振能力,解决频偏、不起振、干扰、频率错误等问题。技术专家免费分析,测完如有问题,会进一步晶振烧录/修改电路。
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