【产品】60V/500mA N沟道增强型MOSFET 2N7002，采用高密度单元设计实现超低导通电阻

时间： 2022-04-03 来源：辰达行

技术问答

辰达行（MDD）推出一款采用SOT-23封装的N沟道增强型MOSFET 2N7002，采用高密度单元设计实现超低导通电阻，并提供坚固耐用、可靠的快速开关性能。漏源导通电阻R_DS(on)为1.1Ω @ 10V ，1.3Ω @ 4.5V，漏源击穿电压V_(BR)DSS为60V，漏极连续电流I_D为500mA。

2N7002的封装和等效电路

产品特征

●采用高密度单元设计实现超低导通电阻

●电压控制的小信号开关

●高饱和电流能力

产品应用

●便携式设备的负载开关

●DC/DC转换器

最大额定值（Ta=25°C，除非另有说明）

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