The New-generation P-channel SGT MOSFET from JieJie Microelectronics with Advanced PDFN Package
JieJie Microelectronics hereby launches a new generation of 100V P-channel SGT MOSFET, which improves FOM performance by 20% compared with the previous generation design, having been considered world-leading. The advanced PDFN3x3-8L and PDFN5x6-8L low profile packages boast 64% and 48% smaller area and 45% and 55% lower height than traditional SOP-8L and DPAK packages, thus being ideal for compact terminal design. Moreover, the low stress and 0.275mm length of the PDFN5x6-8L pins remarkably improve the solder joint yield of automatically optically inspected PCB assembly (PCBA), further ensuring stable operation and long-term reliability of terminals.
The drive circuit of the 100V P-channel MOSFET is simpler than that of the N-channel MOSFET; hence, the former meets the constantly increasing requirements for long-term stable operation of systems, narrow application spaces, and reduced critical failure points of circuits in such applications as "high-end loads, anti-reverse connection circuits, battery reverse protection, B/BLDC motor drive, and high-side switches for DC-DC step-down conversion" in sectors of high-performance computing (HPC), Industry 5.0 (IE), and the aftermarket of automotive electronics (Autonomous Driving System, ADS).
The performance of the new-generation P-channel JPFET® is considered to be cutting-edge all over the world, and its key electrical parameters such as RDS(ON)_Typ and FOM are superior to like products of international first-line semiconductor IDMs. JMPL1050AU is available in a thin and small PDFN3x3-8L package, and the RDS(ON)_Typ and FOM measurements of the device are as low as 38mΩ/760 when VGS=10V, thus being at the international leading level. Furthermore, the top-ranking linear model/safe operation area (SOA) feature enables devices to function in a safe and reliable manner even in the operating state of high current. The extremely low on-resistance helps improve operational efficiency, reduce system cost, and extend the service life of devices.
Fan Jun, Marketing Director of Power MOSFET at JieJie Microelectronics: "The new-generation P-channel JPFET® series, available in both plug-in and new SMD high-quality packages, is ideal for customer applications at operating voltages between 40V and 72V. In DC-DC step-down conversion with a duty cycle of less than 30%, JMPL1050AU should be one of the best choices in the industry in terms of high energy conversion efficiency, simple drive circuits, PCBA, and long-term safety and reliability. JieJie Microelectronics will continue to develop P-channel SGT MOSFETs with superior performance in a variety of voltage endurance ranges to meet the demand for power devices in new energy, high-performance computing, automotive electronics, and other terminal applications."
The new-generation P-channel JPFET is in mass production.
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本文由Vicky转载自JieJie Microelectronics News,原文标题为:The new-generation P-channel JPFET with advanced PDFN package offers world-leading performance,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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【产品】捷捷微电新推100V P沟道SGT MOSFET,采用PDFN封装,FOM性能改善20%
捷捷微电推出新一代100V P沟道SGT MOSFET,比起上一代设计,FOM性能改善20%,实现国际领先;主要电气参数如RDS(ON)_Typ和FOM均优于国际一线半导体IDM同类产品;提供插件式和新型贴片式两类高质量封装。
捷捷微电MOS选型表
捷捷微电提供以下技术参数的MOS选型,VDS_Max:-100V~1000V,VGS(th)_Typ:-2V~3.5V等
产品型号
|
品类
|
Confi-guration
|
VDS_Max(V)
|
ID_Max(A)
|
VGS(th)_Typ(V)
|
RDS(ON)_Typ@VGS =10V(mΩ)
|
RDS(ON)_Max@VGS=10V(mΩ)
|
RDS(ON)_Typ@VGS=4.5V(mΩ)
|
RDS(ON)_Max@VGS=4.5V(mΩ)
|
VGS_Max(V)
|
EAS_Max(mJ)
|
Ciss_Typ(pF)
|
Coss_Typ(pF)
|
Crss_Typ(pF)
|
Qg_Typ(nC)
|
MPQ
|
MOQ
|
封装
|
JMSL040SAGQ
|
MOS
|
N
|
40V
|
387A
|
1.5V
|
0.58mΩ
|
0.75mΩ
|
0.8mΩ
|
0.99mΩ
|
±20V
|
506mJ
|
7654pF
|
3738pF
|
44pF
|
114nC
|
3000
|
30000
|
PDFN5x6-8L
|
选型表 - 捷捷微电 立即选型
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捷捷微电 - N沟道功率SGT MOSFET,N-CHANNEL POWER SGT MOSFET,JMSH0602PGQ-13,JMSH0602PGQ,PWM应用,通用汽车,LOAD SWITCH,PWM APPLICATION,负载开关,GENERAL AUTOMTOIVE
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捷捷微电 - N沟道功率SGT MOSFET,N-CHANNEL POWER SGT MOSFET,JMSH1509PG-13,JMSH1509PG,PWM应用,POWER MANAGEMENT,电源管理,LOAD SWITCH,PWM APPLICATION,负载开关
JMSL04055UQ 40V,62A,5.1mΩN沟道功率SGT MOSFET
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捷捷微电 - N沟道功率SGT MOSFET,N-CHANNEL POWER SGT MOSFET,JMSL04055UQ-13,JMSL04055UQ,PWM应用,LOAD SWITCH,PWM APPLICATION,负载开关,GENERAL AUTOMTOIVE APPLICATION,通用自动化应用程序
JMSH0406PGQ 40V,106A,4.1mΩN沟道功率SGT MOSFET
该资料详细介绍了JMSH0406PGQ型号的40V、106A、4.1mΩ N-channel Power SGT MOSFET的特性、参数和应用领域。资料涵盖了产品的电气特性、热特性、开关特性、典型性能曲线、封装尺寸等详细信息。
捷捷微电 - N沟道功率SGT MOSFET,N-CHANNEL POWER SGT MOSFET,JMSH0406PGQ-13,JMSH0406PGQ,PWM应用,通用汽车,LOAD SWITCH,PWM APPLICATION,负载开关,GENERAL AUTOMTOIVE
JMSL06120UQ 60V,42A,10.9mΩN沟道功率SGT MOSFET
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JMTK1404A 40V、190A、3.1mΩN沟道功率Trench MOSFET
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捷捷微电 - N沟道功率沟槽MOSFET,N-CHANNEL POWER TRENCH MOSFET,JMTK1404A,POWER MANAGEMENT,电源管理,LOAD SWITCH,脉宽调制,PWM,负载开关
DH045N04P 80A 40V N沟道增强型功率MOSFET
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JMSH0803PC 80V,202A,2.4mΩN沟道功率SGT MOSFET
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捷捷微电 - N沟道功率SGT MOSFET,N-CHANNEL POWER SGT MOSFET,JMSH0803PC,JMSH0803PC-U,PWM应用,POWER MANAGEMENT,电源管理,LOAD SWITCH,PWM APPLICATION,负载开关
JMPL1050AU-100V 38mΩP沟道功率MOSFET
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捷捷微电 - P沟道功率MOSFET,P-CH POWER MOSFET,JMPL1050AU-13,JMPL1050AU,HARD SWITCHING CIRCUIT,电信,INDUCTRIAL,引产,BATTERY MANAGEMENT,TELECOMS,电池管理,HIGH SPEED CIRCUIT,高速电路,硬开关电路
JMPL1050AP-100V 39mΩP沟道功率MOSFET
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