UMS Newly Launched A High Power GaN Transistor CHKA012bSYA with Wide Band Capability of up to 6GHz and High Power Added Efficiency of 58%@1.3GHz

时间： 2022-10-21 来源：UMS News

技术问答

The CHKA012bSYA is an unmatched High Power GaN transistor. This power bar covers from DC to up 6GHz. It exhibits a high power of 130W with an excellent PAE. Its consumption remains low with 50V@640mA; It can be used in CW or Pulsed mode. Its associated gain @ max PAE is 16dB@1.3GHz.

Fig.1

The CHKA012bSYA is designed on a UMS GaN 0.5µm proprietary technology.This circuit is proposed in an airtight metal ceramic flanged package which makes it an excellent solution not only for telecommunication and radar for space but also for all applications requiring hermetic solutions.

Fig.2

Main characteristics

●Wide Band Capability: Up to 6GHz

●High Psat: 130W

●High Power Added Efficiency: 58%@1.3GHz

●Pulsed and CW operating modes

●DC Bias: 50V @ ID_Q=640mA

●MTTF >106 hours @ Tj =200℃

●Associated Gain @ Max PAE: 16dB@1.3GHz

●Hermetic ceramic metal flanged power Package

Fig.3

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UMS氮化镓（GaN）功率晶体管选型表

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产品型号	品类	Glin(dB) @ Freq(GHz)	Operating Frequency(GHz)	Saturated Power(W)	PAE(%) @ Freq(GHz)	Bias(mA)	Bias(V)	Case
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