UMS Newly Launched A High Power GaN Transistor CHKA012bSYA with Wide Band Capability of up to 6GHz and High Power Added Efficiency of 58%@1.3GHz

时间： 2022-10-21 来源：UMS News

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High Power GaN transistor,CHKA012bSYA,UMS

The CHKA012bSYA is an unmatched High Power GaN transistor. This power bar covers from DC to up 6GHz. It exhibits a high power of 130W with an excellent PAE. Its consumption remains low with 50V@640mA; It can be used in CW or Pulsed mode. Its associated gain @ max PAE is 16dB@1.3GHz.

Fig.1

The CHKA012bSYA is designed on a UMS GaN 0.5µm proprietary technology.This circuit is proposed in an airtight metal ceramic flanged package which makes it an excellent solution not only for telecommunication and radar for space but also for all applications requiring hermetic solutions.

Fig.2

Main characteristics

●Wide Band Capability: Up to 6GHz

●High Psat: 130W

●High Power Added Efficiency: 58%@1.3GHz

●Pulsed and CW operating modes

●DC Bias: 50V @ ID_Q=640mA

●MTTF >106 hours @ Tj =200℃

●Associated Gain @ Max PAE: 16dB@1.3GHz

●Hermetic ceramic metal flanged power Package

Fig.3

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本文由三年不鸣转载自UMS News，原文标题为:CHKA012bSYA a broadband powerful GaN transistor，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。

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